1
Transistors
Publication date: March 2004 SJC00105BED
2SC1473, 2SC1473A
Silicon NPN triple diffusion planar type
For general amplification
2SC1473 complementary to 2SA1018
2SC1473A complementary to 2SA1767
■ Features
• High collector-emitter voltage (Base open) V
CEO
• High transition frequency f
T
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage
2SC1473 V
CBO
250 V
(Emitter open)
2SC1473A
300
Collector-emitter voltage
2SC1473 V
CEO
200 V
(Base open)
2SC1473A
300
Emitter-base voltage (Collector open) V
EBO
7V
Collector current I
C
70 mA
Peak collector current I
CP
100 mA
Collector power dissipation P
C
750 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
■ Electrical Characteristics T
a
= 25°C ± 3°C
5.0
±0.2
0.7
±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
123
+0.6
–0.2
4.0
±0.2
5.1
±0.2
12.9
±0.5
2.3
±0.2
0.7
±0.2
Unit: mm
1: Emitter
2: Collector
3: Base
EIAJ: SC-43A TO-92-B1 Package
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage
2SA1473 V
CEO
I
C
= 100 µA, I
B
= 0 200 V
(Base open)
2SA1473A
300
Emitter-base voltage (Collector open) V
EBO
I
E
= 1 µA, I
C
= 07V
Collector-emitter cutoff
2SA1473 I
CEO
V
CE
= 120 V, T
a
= 60°C, I
B
= 01µA
current (Base open)
2SA1473A
V
CE
= 120 V, I
B
= 01
Forward current transfer ratio
*
h
FE
V
CE
= 10 V, I
C
= 5 mA 60 220
Collector-emitter saturation voltage V
CE(sat)
I
C
= 50 mA, I
B
= 5 mA 1.2 V
Transition frequency f
T
V
CB
= 10 V, I
E
= −10 mA, f = 200 MHz 50 80 MHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 10 pF
(Common base, input open circuited)
Rank Q R
h
FE
60 to 150 100 to 220
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC1473, 2SC1473A
2
SJC00105BED
P
C
T
a
I
C
V
CE
I
C
V
BE
I
C
I
B
V
CE(sat)
I
C
I
B
V
BE
h
FE
I
C
f
T
I
E
C
ob
V
CB
0 16040 12080
0
1.0
0.8
0.6
0.4
0.2
Collector power dissipation P
C
(
W
)
Ambient temperature T
a
(
°C
)
0108264
0
120
100
80
60
40
20
I
B
= 2 mA
1.8 mA
1.6 mA
1.4 mA
1.2 mA
1.0 mA
0.8 mA
0.2 mA
0.4 mA
0.6 mA
T
a
= 25°C
Collector current I
C
(
mA
)
Collector-emitter voltage V
CE
(
V
)
0 2.01.60.4 1.20.8
0
120
100
80
60
40
20
V
CE
= 10 V
T
a
= 75°C
−25°C
25°C
Base-emitter voltage V
BE
(
V
)
Collector current I
C
(
mA
)
0 2.01.60.4 1.20.8
0
120
100
80
60
40
20
V
CE
= 10 V
T
a
= 25°C
Base current I
B
(
mA
)
Collector current I
C
(
mA
)
0.1 1 10 100
0.01
0.1
1
10
100
I
C
/ I
B
= 10
T
a
= 75°C
25°C
−25°C
Collector-emitter saturation voltage V
CE(sat)
(
V
)
Collector current I
C
(
mA
)
0 1.00.80.2 0.60.4
0
3.0
2.5
2.0
1.5
1.0
0.5
V
CE
= 10 V
T
a
= 25°C
Base-emitter voltage V
BE
(
V
)
Base current I
B
(
mA
)
0.1 1 10 100
0
360
300
240
180
120
60
V
CE
= 10 V
T
a
= 75°C
25°C
−25°C
Forward current transfer ratio h
FE
Collector current I
C
(
mA
)
−1 −10 −100
0
160
120
40
80
V
CB
= 10 V
T
a
= 25°C
Transition frequency f
T
(
MHz
)
Emitter current I
E
(
mA
)
110100
0
10
8
6
4
2
I
E
= 0
f = 1 MHz
T
a
= 25°C
Collector-base voltage V
CB
(
V
)
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC1473, 2SC1473A
3
SJC00105BED
I
CBO
T
a
I
EBO
T
a
Safe operation area
020016040 12080
1
10
10
2
10
3
10
4
V
CB
= 250 V
Ambient temperature T
a
(
°C
)
I
CBO
(
T
a
)
I
CBO
(
T
a
= 25°C
)
0 20016040 12080
1
10
10
2
10
3
10
4
V
EB
= 5 V
Ambient temperature T
a
(
°C
)
I
EBO
(
T
a
)
I
EBO
(
T
a
= 25°C
)
1 10 100 1 000
0.1
1
10
100
1 000
Single pulse
T
a
= 25°C
t = 10 ms
2SC1473A
2SC1473
t = 1 ms
DC
I
CP
I
C
Collector current I
C
(
mA
)
Collector-emitter voltage V
CE
(
V
)
This product complies with the RoHS Directive (EU 2002/95/EC).
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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