Motorola MJE15030-MBR Datasheet

Category
Transistors
Type
Datasheet
1
Motorola Bipolar Power Transistor Device Data
. . . designed for use as high–frequency drivers in audio amplifiers.
DC Current Gain Specified to 4.0 Amperes
h
FE
= 40 (Min) @ I
C
= 3.0 Adc
h
FE
= 20 (Min) @ I
C
= 4.0 Adc
Collector–Emitter Sustaining Voltage —
V
CEO(sus)
= 120 Vdc (Min) — MJE15028, MJE15029
V
CEO(sus)
= 150 Vdc (Min) — MJE15030, MJE15031
High Current Gain — Bandwidth Product
f
T
= 30 MHz (Min) @ I
C
= 500 mAdc
TO–220AB Compact Package
MAXIMUM RATINGS
Rating Symbol
MJE15028
MJE15029
MJE15030
MJE15031
Unit
Collector–Emitter Voltage V
CEO
120 150 Vdc
Collector–Base Voltage V
CB
120 150 Vdc
Emitter–Base Voltage V
EB
5.0 Vdc
Collector Current Continuous
Peak
I
C
8.0
16
Adc
Base Current I
B
2.0 Adc
Total Power Dissipation @ T
C
= 25 C
Derate above 25 C
P
D
50
0.40
Watts
W/ C
Total Power Dissipation @ T
A
= 25 C
Derate above 25 C
P
D
2.0
0.016
Watts
W/ C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
65 to +150
C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
θJC
2.5
C/W
Thermal Resistance, Junction to Ambient R
θJA
62.5
C/W
0
Figure 1. Power Derating
T, TEMPERATURE (
°
C)
0
40 60 100 120 160
40
T
C
20
60
P
D
, POWER DISSIPATION (WATTS)
0
2.0
T
A
1.0
3.0
80 140
T
C
T
A
20
Preferred devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE15028/D
Motorola, Inc. 1995
*Motorola Preferred Device
8 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
120150 VOLTS
50 WATTS
CASE 221A–06
TO–220AB
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25 C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(I
C
= 10 mAdc, I
B
= 0) MJE15028, MJE15029
MJE15030, MJE15031
V
CEO(sus)
120
150
Vdc
Collector Cutoff Current
(V
CE
= 120 Vdc, I
B
= 0) MJE15028, MJE15029
(V
CE
= 150 Vdc, I
B
= 0) MJE15030, MJE15031
I
CEO
0.1
0.1
mAdc
Collector Cutoff Current
(V
CB
= 120 Vdc, I
E
= 0) MJE15028, MJE15029
(V
CB
= 150 Vdc, I
E
= 0) MJE15030, MJE15031
I
CBO
10
10
µAdc
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
I
EBO
10 µAdc
ON CHARACTERISTICS (1)
DC Current Gain
(I
C
= 0.1 Adc, V
CE
= 2.0 Vdc)
(I
C
= 2.0 Adc, V
CE
= 2.0 Vdc)
(I
C
= 3.0 Adc, V
CE
= 2.0 Vdc)
(I
C
= 4.0 Adc, V
CE
= 2.0 Vdc)
h
FE
40
40
40
20
DC Current Gain Linearity
(V
CE
From 2.0 V to 20 V, I
C
From 0.1 A to 3 A)
(NPN TO PNP)
h
FE
Typ
2
3
Collector–Emitter Saturation Voltage
(I
C
= 1.0 Adc, I
B
= 0.1 Adc)
V
CE(sat)
0.5 Vdc
Base–Emitter On Voltage
(I
C
= 1.0 Adc, V
CE
= 2.0 Vdc)
V
BE(on)
1.0 Vdc
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product (2)
(I
C
= 500 mAdc, V
CE
= 10 Vdc, f
test
= 10 MHz)
f
T
30 MHz
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
(2) f
T
= h
fe
• f
test
.
t, TIME (ms)
0.01
0.01 0.05 1.0 2.0 5.0 10 20 50 500 1.0 k0.1 0.50.2
1.0
0.2
0.1
0.05
r(t), TRANSIENT THERMAL
Z
θ
JC(t)
= r(t) R
θ
JC
R
θ
JC
= 1.56
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
– T
C
= P
(pk)
Z
θ
JC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.2
SINGLE PULSE
RESISTANCE (NORMALIZED)
Figure 2. Thermal Response
0.5
D = 0.5
0.05
0.3
0.7
0.07
0.03
0.02
0.02
100 200
0.1
0.02
0.01
3
Motorola Bipolar Power Transistor Device Data
20
2.0
Figure 3. Forward Bias Safe Operating Area
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
16
10
0.02
20 120
BONDING WIRE LIMITED
THERMALLY LIMITED
SECOND BREAKDOWN
LIMITED @ T
C
= 25
°
C
I
C
, COLLECTOR CURRENT (AMP)
dc
100
µ
s
5.0 10 150
1.0
50
0.1
5 ms
MJE15028
MJE15029
MJE15030
MJE15031
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate I
C
– V
CE
limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion then the curves indicate.
The data of Figures 3 and 4 is based on T
J(pk)
= 150 C;
T
C
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided T
J(pk)
< 150 C. T
J(pk)
may be calculated from the data in Figure 2.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
8.0
0
Figure 4. Reverse–Bias Switching
Safe Operating Area
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
5.0
0
120 140
I
C
, COLLECTOR CURRENT (AMP)
5 V
V
BE(off)
= 9 V
100 110 150
3.0
130
2.0
1.0
V
R
, REVERSE VOLTAGE (VOLTS)
10
150
500
1000
50
Figure 5. Capacitances
200
10030107.05.01.5
C, CAPACITANCE (pF)
3.0
20
50
Figure 6. Small–Signal Current Gain
f, FREQUENCY (MHz)
1.0 3.0 10
20
100
h
fe
, SMALL SIGNAL CURRENT GAIN
2.0 7.0
5.0
0.5
5.0
50
30
10
0.7
NPN
Figure 7. Current Gain–Bandwidth Product
I
C
, COLLECTOR CURRENT (AMP)
0.5 2.0
60
100
f
T
, CURRENT GAIN–BANDWIDTH PRODUCT (MHz)
1.0 10
20
0.1 5.0
90
50
0.2
I
C
/I
B
= 10
T
C
= 25
°
C
3 V
1.5 V
PNP
(NPN)
(PNP)
V
CE
= 10 V
I
C
= 0.5 A
T
C
= 25
°
C
C
ib
(NPN)
C
ob
(PNP)
100
30
0
10
0 V
C
ib
(PNP)
C
ob
(NPN)
4
Motorola Bipolar Power Transistor Device Data
I
C
, COLLECTOR CURRENT (AMP)I
C
, COLLECTOR CURRENT (AMP)
h
FE
, DC CURRENT GAIN
Figure 8. DC Current Gain
Figure 9. “On” Voltage
I
C
, COLLECTOR CURRENT (AMP)
200
1K
100.1
150
100
70
30
0.2
10
1.0 5.02.00.5
T
J
= 25
°
C
T
J
= 150
°
C
0.1
I
C
, COLLECTOR CURRENT (AMP)
1.6
1.2
1.0
0.6
0.2
T
J
= 25
°
C
V, VOLTAGE (VOLTS)
NPN — MJE15028 MJE15030 PNP — MJE15029 MJE15031
500
1K
200
100
50
20
10
h
FE
, DC CURRENT GAIN
V
CE
= 2.0 V
V, VOLTAGE (VOLTS)
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
= I
C
/I
B
= 20
V
BE(on)
@ V
CE
= 2.0 V
1.8
1.4
1.0
0.8
0.4
0
I
C
/I
B
= 10
I
C
, COLLECTOR CURRENT (AMP)
V
CC
= 80 V
I
C
/I
B
= 10
T
J
= 25
°
C
t
d
(NPN, PNP)
t
r
(PNP)
Figure 10. Turn–On Times
10
I
C
, COLLECTOR CURRENT (AMP)
5.0
3.0
2.0
1.0
0.5
Figure 11. Turn–Off Times
0.2
0.1
V
CC
= 80 V
I
C
/I
B
= 10, I
B1
= I
B2
t
s
(NPN) T
J
= 25
°
C
0.1
1.0
0.5
0.2
0.03
0.01
0.1
0.05
0.02
t, TIME ( s)
µ
t, TIME ( s)
µ
NPN PNP
100.1 0.2 1.0 5.02.00.5
100.2 1.0 5.02.00.5 100.1 0.2 1.0 5.02.00.5
100.2 1.0 5.02.00.5 100.1 0.2 0.3 5.02.00.5
50
20
500
T
J
= 150
°
C
T
J
= –55
°
C
V
CE
= 2 V
T
J
= –55
°
C
T
J
= 25
°
C
t
r
(NPN)
T
J
= 25
°
C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 2.0 V
V
CE(sat)
= I
C
/I
B
= 20
I
C
/I
B
= 10
t
f
(NPN)
t
f
(PNP)
t
s
(PNP)
5
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 221A–06
TO–220AB
ISSUE Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 ––– 1.15 –––
Z ––– 0.080 ––– 2.04
B
Q
H
Z
L
V
G
N
A
K
F
1 2 3
4
D
SEATING
PLANE
–T–
C
S
T
U
R
J
6
Motorola Bipolar Power Transistor Device Data
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MJE15028/D
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Motorola MJE15030-MBR Datasheet

Category
Transistors
Type
Datasheet

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