Panasonic 2SA2174J User manual

Panasonic
Brand
Panasonic
Model
2SA2174J
Type
User manual

This manual is also suitable for

Panasonic 2SA2174J is a Silicon PNP epitaxial planar type transistor designed for general amplification and is complementary to 2SC6054J. It features a high forward current transfer ratio (hFE) and is housed in a compact SSMini3-F1 package, enabling downsizing of equipment and facilitating automatic insertion through tape packing. Its key specifications include a collector-base voltage (VCBO) of -60V, a collector-emitter voltage (VCEO) of -50V, and a collector current (IC) of -100mA. The 2SA2174J is suitable for use in various amplification applications.

Panasonic 2SA2174J is a Silicon PNP epitaxial planar type transistor designed for general amplification and is complementary to 2SC6054J. It features a high forward current transfer ratio (hFE) and is housed in a compact SSMini3-F1 package, enabling downsizing of equipment and facilitating automatic insertion through tape packing. Its key specifications include a collector-base voltage (VCBO) of -60V, a collector-emitter voltage (VCEO) of -50V, and a collector current (IC) of -100mA. The 2SA2174J is suitable for use in various amplification applications.

Transistors
Publication date: November 2005 SJC00342AED 1
2SA2174J
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC6054J
Features
High forward current transfer ratio h
FE
SS-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing.
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open)
V
CBO
−60
V
Collector-emitter voltage (Base open)
V
CEO
−50
V
Emitter-base voltage (Collector open)
V
EBO
−7
V
Collector current
I
C
−100
mA
Peak collector current
I
CP
−200
mA
Collector power dissipation
P
C
125 mW
Junction temperature
T
j
125
°C
Storage temperature
T
stg
−55 to +125 °C
Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= −10 µA, I
E
= 0
−60
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= −2 mA, I
B
= 0
−50
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= −10 µA, I
C
= 0
− 7
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= −20 V, I
E
= 0
− 0.1 µA
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= −10 V, I
B
= 0
−100 µA
Forward current transfer ratio
h
FE
V
CE
= −10 V, I
C
= −2 mA 160 460
Collector-emitter saturation voltage
V
CE(sat)
I
C
= −100 mA, I
B
= −10 mA
− 0.2 − 0.5
V
Transition frequency
f
T
V
CB
= −10 V, I
E
= 1 mA, f = 200 MHz 80 MHz
Collector output capacitance
(Common base, input open circuited)
C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz 2.2 pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Marking Symbol: 7L
Unit: mm
1: Base
2: Emitter
3: Collector SSMini3-F1 Package
0.27±0.02
3
1 2
0.12
+0.03
–0.01
0.80±0.05(0.80)
0.85
1.60±0.05
0 to 0.02
0.10 max.
0.70
+0.05
–0.03
(0.375)
5°
5°
1.60
+0.05
–0.03
1.00±0.05
(0.50)(0.50)
+0.05
–0.03
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA2174J
2 SJC00342AED
P
T
T
a
I
C
V
CE
I
C
V
BE
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
0 40 12080
0
140
40
60
20
100
120
80
2SA2174J_P
C
-T
a
Collector power dissipation P
C
(
mW
)
Ambient temperature T
a
(
°C
)
0 −4 −8 −12
0
−10
−20
−30
−50
−40
−60
−70
−80
2SA2174J_I
C
-V
CE
Collector current I
C
(
mA
)
Collector-emitter voltage V
CE
(
V
)
T
a
= 25°C
−50 µA
−100 µA
−150 µA
−200 µA
−250 µA
I
B
= −300 µA
0
− 0.4− 0.2 − 0.8 −1.0− 0.6 −1.2 −1.4
0
−30
−40
−50
−20
−10
−60
−70
−80
−90
−100
2SA2174J_I
C
-V
BE
Collector current I
C
(
mA
)
Base-emitter voltage V
BE
(
V
)
V
CE
= −10 V
T
a
= 85°C
25°C
−25°C
− 0.1 −1 −10 −100
− 0.01
− 0.1
−1
Collector current I
C
(
mA
)
Collector-emitter saturation voltage V
CE(sat)
(
V
)
2SA2174J_V
CE(sat)
-I
C
I
C
/I
B
= 10
T
a
= 85°C
25°C
−25°C
−1 −10 −100
−1
000
0
300
350
250
400
50
100
200
150
Collector current I
C
(
mA
)
Forward current transfer ratio h
FE
2SA2174J_h
FE
-I
C
V
CE
= −10 V
T
a
= 85°C
25°C
−25°C
0 −8 −24−16 −32 −40
1
10
Collector-base voltage V
CB
(
V
)
2SA2174J_C
ob
-V
CB
Collector output capacitance
(Common base, input open circuited) C
ob
(
pF
)
f = 1 MHz
T
a
= 25°C
This product complies with the RoHS Directive (EU 2002/95/EC).
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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Panasonic 2SA2174J User manual

Panasonic
Brand
Panasonic
Model
2SA2174J
Type
User manual
This manual is also suitable for

Panasonic 2SA2174J is a Silicon PNP epitaxial planar type transistor designed for general amplification and is complementary to 2SC6054J. It features a high forward current transfer ratio (hFE) and is housed in a compact SSMini3-F1 package, enabling downsizing of equipment and facilitating automatic insertion through tape packing. Its key specifications include a collector-base voltage (VCBO) of -60V, a collector-emitter voltage (VCEO) of -50V, and a collector current (IC) of -100mA. The 2SA2174J is suitable for use in various amplification applications.

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