1
Motorola Bipolar Power Transistor Device Data
The MJ15022 and MJ15024 are PowerBase power transistors designed for high
power audio, disk head positioners and other linear applications.
• High Safe Operating Area (100% Tested) —
2 A @ 80 V
• High DC Current Gain —
h
FE
= 15 (Min) @ I
C
= 8 Adc
MAXIMUM RATINGS
Rating Symbol MJ15022 MJ15024 Unit
Collector–Emitter Voltage V
CEO
200 250 Vdc
Collector–Base Voltage V
CBO
350 400 Vdc
Emitter–Base Voltage V
EBO
5 Vdc
Collector–Emitter Voltage V
CEX
400 Vdc
Collector Current — Continuous
Peak (1)
I
C
16
30
Adc
Base Current — Continuous I
B
5 Adc
Total Power Dissipation @ T
C
= 25 C
Derate above 25 C
P
D
250
1.43
Watts
W/ C
Operating and Storage Junction Temperature Range T
J
, T
stg
–65 to +200
C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
θJC
0.70
C/W
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
Preferred devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ15022/D
Motorola, Inc. 1995
16 AMPERE
SILICON
POWER TRANSISTORS
200 AND 250 VOLTS
250 WATTS
*Motorola Preferred Device
CASE 1–07
TO–204AA
(TO–3)
REV 7
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25 C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(I
C
= 100 mAdc, I
B
= 0) MJ15022
MJ15024
V
CEO(sus)
200
250
—
—
Collector Cutoff Current
(V
CE
= 200 Vdc, V
BE(off)
= 1.5 Vdc) MJ15022
(V
CE
= 250 Vdc, V
BE(off)
= 1.5 Vdc) MJ15024
I
CEX
—
—
250
250
µAdc
Collector Cutoff Current
(V
CE
= 150 Vdc, I
B
= 0) MJ15022
(V
CE
= 200 vdc, I
B
= 0) MJ15024
I
CEO
—
—
500
500
µAdc
Emitter Cutoff Current
(V
CE
= 5 Vdc, I
B
= 0)
I
EBO
— 500 µAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(V
CE
= 50 Vdc, t = 0.5 s (non–repetitive))
(V
CE
= 80 Vdc, t = 0.5 s (non–repetitive))
I
S/b
5
2
—
—
Adc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 8 Adc, V
CE
= 4 Vdc)
(I
C
= 16 Adc, V
CE
= 4 Vdc)
h
FE
15
5
60
—
—
Collector–Emitter Saturation Voltage
(I
C
= 8 Adc, I
B
= 0.8 Adc)
(I
C
= 16 Adc, I
B
= 3.2 Adc)
V
CE(sat)
—
—
1.4
4.0
Vdc
Base–Emitter On Voltage
(I
C
= 8 Adc, V
CE
= 4 Vdc)
V
BE(on)
— 2.2 Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(I
C
= 1 Adc, V
CE
= 10 Vdc, f
test
= 1 MHz)
f
T
4 — MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f
test
= 1 MHz)
C
ob
— 500 pF
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2%.
100
Figure 1. Active–Region Safe Operating Area
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.1 0.2 0.5 10 1 k
20
T
C
= 25
°
C
50 250
0.1
I
C
, COLLECTOR CURRENT (AMPS)
0.2
1.0
5.0
50
500100
10
20
BONDING WIRE LIMITED
THERMAL LIMITATION
(SINGLE PULSE)
SECOND BREAKDOWN
LIMITED
There are two limitations on the powerhandling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate I
C
– V
CE
limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 1 is based on T
J(pk)
= 200 C; T
C
is
variable depending on conditions. At high case tempera-
tures, thermal limitations will reduce the power that can be
handled to values Ion than the limitations imposed by second
breakdown.
3
Motorola Bipolar Power Transistor Device Data
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
f
T
, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
Figure 2. Capacitances
Figure 3. Current–Gain — Bandwidth Product
Figure 4. DC Current Gain
I
C
, COLLECTOR CURRENT (AMPS)
0.1 0.3 0.5
9
5
V
CE
= 4 V
8
2
1.0 5.0
0
1
3
4
7
6
1.8
0.03
I
B
, BASE CURRENT (AMPS)
1.0 305.02.00.5
1.0
0.6
0.2
2.0 10
0
1.4
100.20.1
8 A
I
C
= 4 A
4000
0.3
V
R
, REVERSE VOLTAGE (VOLTS)
50
C, CAPACITANCE (pF)
T
J
= 25
°
C
10010
500
100
40
1000
3003010.5
Figure 5. “On” Voltage
5.0
1.8
0.15
I
C
, COLLECTOR CURRENT (AMPS)
10
V, VOLTAGE (VOLTS)
T
J
= 25
°
C
205.0
1.0
0.8
0.2
0
1.4
2.01.0
V
CE(sat)
@ I
C
/I
B
= 10
0.5
V
BE(on)
@ V
CE
= 4 V
Figure 6. Collector Saturation Region
I
C
, COLLECTOR CURRENT (AMPS)
200
h
FE
, DC CURRENT GAIN
100
1.0
5.0
10
20
50
C
ob
T
J
= 25
°
C
T
J
= 100
°
C
T
J
= 25
°
C
V
CE
= 10 V
f
Test
= 1 MHz
100
°
C
25
°
C
T
J
= 25
°
C
16 A
3000
0.2 10 205.02.01.00.5
C
ib
100
°
C
TYPICAL CHARACTERISTICS
4
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO–204AA OUTLINE SHALL APPLY.
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 1.550 REF 39.37 REF
B ––– 1.050 ––– 26.67
C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
E 0.055 0.070 1.40 1.77
G 0.430 BSC 10.92 BSC
H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
N ––– 0.830 ––– 21.08
Q 0.151 0.165 3.84 4.19
U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77
A
N
E
C
K
–T–
SEATING
PLANE
2 PLD
M
Q
M
0.13 (0.005) Y
M
T
M
Y
M
0.13 (0.005) T
–Q–
–Y–
2
1
U
L
G
B
V
H
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
How to reach us:
USA /EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315
MFAX: RMF[email protected] – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
MJ15022/D
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