Panasonic Network Card 2SB1320A User manual

Panasonic
Brand
Panasonic
Model
Network Card 2SB1320A
Type
User manual

This manual is also suitable for

Panasonic Network Card 2SB1320A

This versatile silicon PNP epitaxial planar type transistor is designed for general amplification purposes. It offers high forward current transfer ratio (hFE) and allows supply with radial taping. The 2SB1320A is complementary to the 2SD1991A transistor.

Key features include:

  • High forward current transfer ratio (hFE)
  • Radial taping capability
  • Complementary to 2SD1991A

Potential use cases for the Panasonic Network Card 2SB1320A include:

  • General amplification applications
  • Complementary pairing with 2SD1991A transistors
  • Signal conditioning circuits

Panasonic Network Card 2SB1320A

This versatile silicon PNP epitaxial planar type transistor is designed for general amplification purposes. It offers high forward current transfer ratio (hFE) and allows supply with radial taping. The 2SB1320A is complementary to the 2SD1991A transistor.

Key features include:

  • High forward current transfer ratio (hFE)
  • Radial taping capability
  • Complementary to 2SD1991A

Potential use cases for the Panasonic Network Card 2SB1320A include:

  • General amplification applications
  • Complementary pairing with 2SD1991A transistors
  • Signal conditioning circuits
Transistors
1
Publication date: March 2003 SJC00078BED
2SB1320A
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD1991A
■ Features
• High forward current transfer ratio h
FE
• Allowing supply with the radial taping
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−60 V
Collector-emitter voltage (Base open) V
CEO
−50 V
Emitter-base voltage (Collector open) V
EBO
−7V
Collector current I
C
−100 mA
Peak collector current I
CP
−200 mA
Collector power dissipation P
C
400 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= −10 µA, I
E
= 0 −60 V
Collector-emitter voltage (Base open) V
CEO
I
C
= −2 mA, I
B
= 0 −50 V
Emitter-base voltage (Collector open) V
EBO
I
E
= −10 µA, I
C
= 0 −7V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= −20 V, I
E
= 0 −1 µA
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= −20 V, I
B
= 0 −1 µA
Forward current transfer ratio
*
h
FE
V
CE
= −10 V, I
C
= −2 mA 160 460
Collector-emitter saturation voltage V
CE(sat)
I
C
= −100 mA, I
B
= −10 mA −1V
Transition frequency f
T
V
CB
= −10 V, I
E
= 1 mA, f = 200 MHz 80 MHz
Collector output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz 3.5 pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Rank Q R S No-rank
h
FE
160 to 260 210 to 340 290 to 460 160 to 460
Product of no-rank is not classified and have no marking symbol for rank.
6.9
±0.1
2.5
±0.1
0.45
1.05
±0.05
2.5
±0.5
123
2.5
±0.5
+0.10
–0.05
0.45
+0.10
–0.05
(0.8)
(0.8)
(1.0)(0.85)
3.5
±0.1
14.5
±0.5
(0.7) (4.0)
0.65 max.
Unit: mm
1: Emitter
2: Collector
3: Base
MT-1-A1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1320A
2
SJC00078BED
I
B
V
BE
I
C
V
BE
V
CE(sat)
I
C
P
C
T
a
I
C
V
CE
I
C
I
B
h
FE
I
C
f
T
I
E
C
ob
V
CB
0 16040 12080
0
100
200
300
400
500
Collector power dissipation P
C
(
mW
)
Ambient temperature T
a
(
°C
)
0
0 −12−2 −10−4 −8−6
−120
−100
−80
−60
−40
−20
Collector current I
C
(
mA
)
Collector-emitter voltage V
CE
(
V
)
−250 µA
−200 µA
−150 µA
−100 µA
−50 µA
I
B
= −300 µA
T
a
= 25°C
0
0 −300−200−100 −400
−60
−50
−40
−30
−20
−10
Base current I
B
(
µA
)
Collector current I
C
(
mA
)
V
CE
= −5 V
T
a
= 25°C
Base current I
B
(
µA
)
0
−400
−350
−300
−250
−200
−150
−100
−50
0 − 0.4 − 0.8 −1.2 −1.6
Base-emitter voltage V
BE
(
V
)
V
CE
= −5 V
T
a
= 25°C
0
0 −2.0−1.6−1.2
−240
−200
−160
−120
−80
−40
T
a
= 75°C
−25°C
25°C
Collector current I
C
(
mA
)
− 0.4 − 0.8
Base-emitter voltage V
BE
(
V
)
V
CE
= −5 V
− 0.001
−1
−1
−10
−10 −100 −1
000
25°C
−25°C
T
a
= 75°C
− 0.01
− 0.1
Collector-emitter saturation voltage V
CE(sat)
(
V
)
Collector current I
C
(m
A
)
I
C
/ I
B
= 10
0
−1
600
500
400
300
200
100
−10 −100 −1
000
T
a
= 75°C
25°C
−25°C
Forward current transfer ratio h
FE
V
CE
= −5 V
Collector current I
C
(
mA
)
0.1 1 10 100
0
160
140
120
100
80
60
40
20
Transition frequency f
T
(
MHz
)
Emitter current I
E
(
mA
)
V
CB
= −10 V
T
a
= 25°C
−1 −10 −100
0
2
6
4
8
Collector-base voltage V
CB
(
V
)
I
E
= 0
f = 1 MHz
T
a
= 25°C
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1320A
3
SJC00078BED
h Parameter I
E
h Parameter V
CB
I
CBO
T
a
C
re
V
CE
NF I
E
NF I
E
Collector-emitter voltage V
CE
(
V
)
0
6
5
4
3
2
1
0 −30−5 −25−10 −20−15
Reverse transfer capacitance
C
re
(pF)
(Common emitter)
I
E
= 1 mA
f = 10.7 MHz
T
a
= 25°C
Noise figure NF
(
dB
)
Emitter current I
E
(
mA
)
0
6
5
4
3
2
1
0.01 0.1 1 10
V
CB
= −5 V
f = 1 kHz
R
g
= 2 kΩ
T
a
= 25°C
0.1
110
0
4
8
12
20
18
14
10
6
2
16
Noise figure NF
(
dB
)
Emitter current I
E
(
mA
)
V
CB
= −5 V
R
g
= 50 kΩ
T
a
= 25°C
f = 100 Hz
10 kHz
1 kHz
1
10
100
110
0.1
h
fe
h
oe
(µS)
h
ie
(kΩ)
h
re
(×10
−4
)
V
CB
= −5 V
f = 270 Hz
T
a
= 25°C
h Parameter
Emitter current I
E
(
mA
)
1
−1
10
100
−10 −100
h
fe
h
oe
(µS)
h
ie
(kΩ)
h
re
(×10
−4
)
h Parameter
Collector-base voltage V
CB
(
V
)
I
E
= −2 mA
f = 270 Hz
T
a
= 25°C
1
10
100
I
CBO
(
T
a
)
I
CBO
(
T
a
= 25°C
)
Ambient temperature T
a
(
°C
)
0 1507525 12550 100
V
CB
= −10 V
This product complies with the RoHS Directive (EU 2002/95/EC).
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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Panasonic Network Card 2SB1320A User manual

Panasonic
Brand
Panasonic
Model
Network Card 2SB1320A
Type
User manual
This manual is also suitable for

Panasonic Network Card 2SB1320A

This versatile silicon PNP epitaxial planar type transistor is designed for general amplification purposes. It offers high forward current transfer ratio (hFE) and allows supply with radial taping. The 2SB1320A is complementary to the 2SD1991A transistor.

Key features include:

  • High forward current transfer ratio (hFE)
  • Radial taping capability
  • Complementary to 2SD1991A

Potential use cases for the Panasonic Network Card 2SB1320A include:

  • General amplification applications
  • Complementary pairing with 2SD1991A transistors
  • Signal conditioning circuits
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