Panasonic 2SC2634 is a Silicon NPN epitaxial planar transistor designed for low-frequency and low-noise amplification. It is complementary to 2SA1127 and features low noise voltage and a high forward current transfer ratio. With a maximum collector power dissipation of 400 mW and a junction temperature of 150 °C, this transistor is suitable for a wide range of applications. It is commonly used in audio amplifiers, pre-amplifiers, and other low-power electronic circuits.
Here are some of the key capabilities of Panasonic 2SC2634:
- Low noise voltage (NV): This transistor has a low noise voltage, making it suitable for applications where noise is a concern, such as audio amplifiers and pre-amplifiers.
Panasonic 2SC2634 is a Silicon NPN epitaxial planar transistor designed for low-frequency and low-noise amplification. It is complementary to 2SA1127 and features low noise voltage and a high forward current transfer ratio. With a maximum collector power dissipation of 400 mW and a junction temperature of 150 °C, this transistor is suitable for a wide range of applications. It is commonly used in audio amplifiers, pre-amplifiers, and other low-power electronic circuits.
Here are some of the key capabilities of Panasonic 2SC2634:
- Low noise voltage (NV): This transistor has a low noise voltage, making it suitable for applications where noise is a concern, such as audio amplifiers and pre-amplifiers.
Transistors
1
Publication date: March 2003 SJC00119BED
2SC2634
Silicon NPN epitaxial planar type
For low-frequency and low-noise amplification
Complementary to 2SA1127
■ Features
• Low noise voltage NV
• High forward current transfer ratio h
FE
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
60 V
Collector-emitter voltage (Base open) V
CEO
55 V
Emitter-base voltage (Collector open) V
EBO
7V
Collector current I
C
100 mA
Peak collector current I
CP
200 mA
Collector power dissipation P
C
400 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 10 µA, I
E
= 060V
Collector-emitter voltage (Base open) V
CEO
I
C
= 1 mA, I
B
= 055V
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 µA, I
C
= 07V
Base-emitter voltage V
BE
V
CE
= 1 V, I
C
= 30 mA 1 V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 10 V, I
E
= 0 1 100 nA
Collector-emitter cutoffcurrent (Base open)
I
CEO
V
CE
= 10 V, I
B
= 0 0.01 1.00 µA
Forward current transfer ratio
*
h
FE
V
CE
= 5 V, I
C
= 2 mA 180 700
Collector-emitter saturation voltage V
CE(sat)
I
C
= 100 mA, I
B
= 10 mA 0.6 V
Transition frequency f
T
V
CB
= 5 V, I
E
= −2 mA, f = 200 MHz 200 MHz
Noise voltage NV V
CE
= 10 V, I
C
= 1 mA, G
V
= 80 dB 150 mV
R
g
= 100 kΩ, Function = FLAT
■ Electrical Characteristics T
a
= 25°C ± 3°C
5.0
±0.2
0.7
±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
123
+0.6
–0.2
4.0
±0.2
5.1
±0.2
12.9
±0.5
2.3
±0.2
0.7
±0.2
Unit: mm
1: Emitter
2: Collector
3: Base
EIAJ: SC-43A
TO-92-B1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Rank R S T
h
FE
180 to 360 260 to 520 360 to 700
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC2634
2
SJC00119BED
V
CE(sat)
I
C
h
FE
I
C
f
T
I
E
P
C
T
a
I
C
V
CE
I
C
V
BE
C
ob
V
CB
NF I
E
NV I
C
0 20016040 12080
0
500
400
300
200
100
Collector power dissipation P
C
(
mW
)
Ambient temperature T
a
(
°C
)
012108264
0
120
100
80
60
40
20
T
a
= 25°C
250 µA
200 µA
350 µA
300 µA
150 µA
100 µA
50 µA
I
B
= 400 µA
Collector current I
C
(
mA
)
Collector-emitter voltage V
CE
(
V
)
0 2.01.60.4 1.20.8
0
120
100
80
60
40
20
V
CE
= 5 V
T
a
= 75°C −25°C
25°C
Base-emitter voltage V
BE
(
V
)
Collector current I
C
(
mA
)
0.1 1 10 100
0.01
0.1
1
10
100
I
C
/ I
B
= 10
T
a
= 75°C
25°C
−25°C
Collector-emitter saturation voltage V
CE(sat)
(
V
)
Collector current I
C
(
mA
)
0.1 1 10 100
0
1 000
800
600
400
200
V
CE
= 5 V
T
a
= 75°C
25°C
−25°C
Forward current transfer ratio h
FE
Collector current I
C
(
mA
)
−1 −10 −100
0
400
300
100
200
V
CB
= 5 V
T
a
= 25°C
Transition frequency f
T
(
MHz
)
Emitter current I
E
(
mA
)
1 10 100
0
10
8
6
4
2
I
E
= 0
f = 1 MHz
T
a
= 25°C
Collector-base voltage V
CB
(
V
)
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
−10 −100 −1 000
0
8
6
2
4
V
CE
= 5 V
R
g
= 1 kΩ
T
a
= 25°C
f = 100 Hz
10 kHz
1 kHz
Noise figure NF
(
dB
)
Emitter current I
E
(
µA
)
0.01 0.1 1
0
120
100
80
60
40
20
V
CE
= 10 V
G
V
= 80 dB
Function = FLAT
5 kΩ
R
g
= 100 kΩ
22 kΩ
Noise voltage NV
(
mV
)
Collector current I
C
(
mA
)
This product complies with the RoHS Directive (EU 2002/95/EC).
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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Panasonic 2SC2634 User manual
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- User manual
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Panasonic 2SC2634 is a Silicon NPN epitaxial planar transistor designed for low-frequency and low-noise amplification. It is complementary to 2SA1127 and features low noise voltage and a high forward current transfer ratio. With a maximum collector power dissipation of 400 mW and a junction temperature of 150 °C, this transistor is suitable for a wide range of applications. It is commonly used in audio amplifiers, pre-amplifiers, and other low-power electronic circuits.
Here are some of the key capabilities of Panasonic 2SC2634:
- Low noise voltage (NV): This transistor has a low noise voltage, making it suitable for applications where noise is a concern, such as audio amplifiers and pre-amplifiers.
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