Panasonic 2SA0720A User manual
- Category
- Network switches
- Type
- User manual
Panasonic 2SA0720A is a silicon PNP epitaxial planar transistor designed for low-frequency driver amplification. It complements the 2SC1318A transistor and is ideal for use in low-power amplifiers with an output of 25W to 30W. With a high collector-emitter voltage and optimum performance in the driver stage, this transistor is a reliable choice for various electronic applications.
Panasonic 2SA0720A is a silicon PNP epitaxial planar transistor designed for low-frequency driver amplification. It complements the 2SC1318A transistor and is ideal for use in low-power amplifiers with an output of 25W to 30W. With a high collector-emitter voltage and optimum performance in the driver stage, this transistor is a reliable choice for various electronic applications.
Transistors
1
Publication date: March 2003 SJC00003BED
2SA0720A (2SA720A)
Silicon PNP epitaxial planar type
For low-frequency driver amplification
Complementary to 2SC1318A
■ Features
• High collector-emitter voltage (Base open) V
CEO
• Optimum for the driver stage of a low-frequency and 25 W to 30
W output amplifier
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−80 V
Collector-emitter voltage (Base open) V
CEO
−70 V
Emitter-base voltage (Collector open) V
EBO
−5V
Collector current I
C
− 0.5 A
Peak collector current I
CP
−1A
Collector power dissipation P
C
625 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= −10 µA, I
E
= 0 −80 V
Collector-emitter voltage (Base open) V
CEO
I
C
= −2 mA, I
B
= 0 −70 V
Emitter-base voltage (Collector open) V
EBO
I
E
= −10 µA, I
C
= 0 −5V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= −20 V, I
E
= 0 − 0.1 µA
Forward current transfer ratio
*
1
h
FE1
*
2
V
CE
= −10 V, I
C
= −150 mA 85 240
h
FE2
V
CE
= −10 V, I
C
= −500 mA 40
Collector-emitter saturation voltage
*
1
V
CE(sat)
I
C
= −300 mA, I
B
= −30 mA − 0.2 − 0.6 V
Base-emitter saturation voltage
*
1
V
BE(sat)
I
C
= −300 mA, I
B
= −30 mA − 0.85 −1.50 V
Transition frequency f
T
V
CB
= −10 V, I
E
= 50 mA, f = 200 MHz 120 MHz
Collector output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz 20 30 pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
5.0
±0.2
0.7
±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
123
+0.6
–0.2
4.0
±0.2
5.1
±0.2
12.9
±0.5
2.3
±0.2
0.7
±0.2
Rank Q R
h
FE1
85 to 170 120 to 240
Unit: mm
1: Emitter
2: Collector
3: Base
EIAJ: SC-43A
TO-92-B1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
1: Pulse measurment
*
2: Rank classification
Note) The part number in the parenthesis shows conventional part number.
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA0720A
2
SJC00003BED
P
C
T
a
I
C
V
CE
I
C
I
B
f
T
I
E
C
ob
V
CB
I
CEO
T
a
V
CE(sat)
I
C
V
BE(sat)
I
C
h
FE
I
C
0 16040 12080
0
800
600
200
400
Collector power dissipation P
C
(
mW
)
Ambient temperature T
a
(
°C
)
0 −10−8−2 −6−4
0
−1.2
−1.0
− 0.8
− 0.6
− 0.4
− 0.2
T
a
= 25°C
I
B
= −10 mA
−9 mA
−8 mA
−7 mA
−6 mA
−5 mA
−4 mA
−3 mA
−2 mA
−1 mA
Collector current I
C
(
A
)
Collector-emitter voltage V
CE
(
V
)
0 −10−8−2 −6−4
0
−1.2
−1.0
− 0.8
− 0.6
− 0.4
− 0.2
V
CE
= −10 V
T
a
= 25°C
Base current I
B
(
mA
)
Collector current I
C
(
A
)
−1 −10 −100
−1 000
− 0.001
− 0.01
− 0.1
−1
−10
I
C
/ I
B
= 10
T
a
= 75°C
25°C
−25°C
Collector-emitter saturation voltage V
CE(sat)
(
V
)
Collector current I
C
(
mA
)
−1 −10 −100
−1 000
− 0.01
− 0.1
−1
−10
−100
I
C
/ I
B
= 10
T
a
= −25°C
25°C
75°C
Base-emitter saturation voltage V
BE(sat)
(
V
)
Collector current I
C
(
mA
)
−1 −10 −100
−1 000
0
300
250
200
150
100
50
V
CE
= −10 V
T
a
= 75°C
25°C
−25°C
Forward current transfer ratio h
FE
Collector current I
C
(
mA
)
1 10 100
0
200
160
120
80
40
V
CB
= −10 V
T
a
= 25°C
Transition frequency f
T
(
MHz
)
Emitter current I
E
(
mA
)
−1 −10 −100
0
50
40
30
20
10
I
E
= 0
f = 1 MHz
T
a
= 25°C
Collector-base voltage V
CB
(
V
)
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
012040 16080
1
10
10
2
10
3
10
4
V
CB
= −20 V
Ambient temperature T
a
(
°C
)
I
CBO
(
T
a
)
I
CBO
(
T
a
= 25°C
)
This product complies with the RoHS Directive (EU 2002/95/EC).
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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Panasonic 2SA0720A User manual
- Category
- Network switches
- Type
- User manual
Panasonic 2SA0720A is a silicon PNP epitaxial planar transistor designed for low-frequency driver amplification. It complements the 2SC1318A transistor and is ideal for use in low-power amplifiers with an output of 25W to 30W. With a high collector-emitter voltage and optimum performance in the driver stage, this transistor is a reliable choice for various electronic applications.
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