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NVH4L060N065SC1

onsemi NVH4L060N065SC1 Owner's manual

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DATA SHEET
www.onsemi.com
© Semiconductor Components Industries, LLC, 2021
January, 2022 − Rev. 1
1Publication Order Number:
NVH4L060N065SC1/D
MOSFET - SiC Power, Single
N-Channel, TO247-4L
650 V, 44 mW, 47 A
NVH4L060N065SC1
Features
•Typ. RDS(on) = 44 m @ VGS = 18 V
Typ. RDS(on) = 60 m @ VGS = 15 V
•Ultra Low Gate Charge (QG(tot) = 74 nC)
•Low Capacitance (Coss = 133 pF)
•100% Avalanche Tested
•AEC−Q101 Qualified and PPAP Capable
•This Device is Pb−Free and is RoHS Compliant
Typical Applications
•Automotive On Board Charger
•Automotive DC/DC Converter for EV/HEV
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 650 V
Gate−to−Source Voltage VGS −8/+22 V
Recommended Operation Values
of Gate−to−Source Voltage
TC < 175°C VGSop −5/+18 V
Continuous Drain
Current (Note 1)
Steady
State
TC = 25°CID47 A
Power Dissipation
(Note 1)
PD176 W
Continuous Drain
Current (Note 1)
Steady
State
TC = 100°CID33 A
Power Dissipation
(Note 1)
PD88 W
Pulsed Drain Current
(Note 2)
TC = 25°C IDM 152 A
Operating Junction and Storage Temperature
Range
TJ, Tstg −55 to
+175
°C
Source Current (Body Diode) IS35 A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 10.1 A, L = 1 mH) (Note 3)
EAS 51 mJ
Maximum Lead Temperature for Soldering
(1/8″ from case for 5 s)
TL260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Repetitive rating, limited by max junction temperature.
3. EAS of 51 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 10.1 A,
VDD = 50 V, VGS = 18 V.
D
G
S1
S2
V(BR)DSS RDS(ON) MAX ID MAX
650 V 70 m @ 18 V 47 A
N−CHANNEL MOSFET
TO247−4L
CASE 340CJ
ORDERING INFORMATION
Device Package Shipping
NVH4L060N065SC1 TO247−4L 30 Units /
Tube
H4L060065SC1 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
ZZ = Lot Traceability
H4L060
065SC1
AYWWZZ
MARKING DIAGRAM
D
S1
G
S2
S1: Kelvin Source
S2: Power Source
NVH4L060N065SC1
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2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Max Unit
Junction−to−Case − Steady State (Note 1) RJC 0.85 °C/W
Junction−to−Ambient − Steady State (Note 1) RJA 40
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 1 mA 650 − − V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJID = 20 mA, referenced to 25°C−0.15 −V/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 650 V
TJ = 25°C− − 10 A
TJ = 175°C− − 1 mA
Gate−to−Source Leakage Current IGSS VGS = +18/−5 V, VDS = 0 V − − 250 nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 6.5 mA 1.8 2.8 4.3 V
Recommended Gate Voltage VGOP −5−+18 V
Drain−to−Source On Resistance RDS(on) VGS = 15 V, ID = 20 A, TJ = 25°C−60 −m
VGS = 18 V, ID = 20 A, TJ = 25°C−44 70
VGS = 18 V, ID = 20 A, TJ = 175°C−50 −
Forward Transconductance gFS VDS = 10 V, ID = 20 A −12 −S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance CISS VGS = 0 V, f = 1 MHz, VDS = 325 V −1473 −pF
Output Capacitance COSS −133 −
Reverse Transfer Capacitance CRSS −13 −
Total Gate Charge QG(TOT) VGS = −5/18 V, VDS = 520 V,
ID = 20 A
−74 −nC
Gate−to−Source Charge QGS −20 −
Gate−to−Drain Charge QGD −23 −
Gate−Resistance RGf = 1 MHz −3.9 −
SWITCHING CHARACTERISTICS
Turn−On Delay Time td(ON) VGS = −5/18 V,
VDS = 400 V,
ID = 20 A,
RG = 2.2
inductive load
−11 −ns
Rise Time tr−14 −
Turn−Off Delay Time td(OFF) −24 −
Fall Time tf−11 −
Turn−On Switching Loss EON −45 −J
Turn−Off Switching Loss EOFF −18 −
Total Switching Loss Etot −63 −
DRAIN−SOURCE DIODE CHARACTERISTICS
Continuous Drain−Source Diode Forward
Current
ISD VGS = −5 V, TJ = 25°C− − 35 A
Pulsed Drain−Source Diode Forward
Current (Note 2)
ISDM − − 152
Forward Diode Voltage VSD VGS = −5 V, ISD = 20 A, TJ = 25°C−4.3 −V
NVH4L060N065SC1
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3
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued)
Parameter UnitMaxTypMinTest ConditionSymbol
DRAIN−SOURCE DIODE CHARACTERISTICS
Reverse Recovery Time tRR VGS = −5/18 V, ISD = 20 A,
dIS/dt = 1000 A/s
−17.7 −ns
Reverse Recovery Charge QRR −90.6 −nC
Reverse Recovery Energy EREC −8.7 −J
Peak Reverse Recovery Current IRRM −10.2 −A
Charge time Ta −9.8 −ns
Discharge time Tb −7.8 −ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NVH4L060N065SC1
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4
TYPICAL CHARACTERISTICS
15 V
Figure 1. On−Region Characteristics Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
VDS, DRAIN−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance Variation with
Temperature
Figure 4. On−Resistance vs. Gate−to−Source
Voltage
TJ, JUNCTION TEMPERATURE (°C) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics Figure 6. Diode Forward Voltage vs. Current
VGS, GATE−TO−SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)
ID, DRAIN CURRENT (A)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE ON−RESISTANCE
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
IS, REVERSE DRAIN CURRENT (A)
8 V
12 V
10 V
VGS = 18 V
VGS = 12 V
ID = 20 A
VGS = 18 V
TJ = 25°C
ID = 20 A
VDS = 10 V
TJ = 175°C
TJ = 25°C
RDS(on), ON−RESISTANCE (m)
ID, DRAIN CURRENT (A)
TJ = −55°C
TJ = 175°C
TJ = 25°C
TJ = 150°C
TJ = −55°C
VGS = −5 V
9 V
18 V
0
10
20
30
40
50
60
012345678910
0.7
0.9
1.0
1.1
1.2
1.3
1.7
−75 −50 −25 0 25 50 75 100 125 150 175
40
140
240
8 9 10 11 12 13 14 15 16 17 18
0
20
40
60
80
90
100
4 6 10 12 18
0.5
1.0
2.0
4.0
5.0
010203040
1
10
100
2345678
7 V
3.0
15 V
200
0.8
1.4
1.5
1.6
81416
10
30
50
70
1.5
2.5
3.5
4.5
NVH4L060N065SC1
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5
TYPICAL CHARACTERISTICS
Figure 7. Gate−to−Source Voltage vs. Total
Charge
Figure 8. Capacitance vs. Drain−to−Source
Voltage
Qg, GATE CHARGE (nC)
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
tAV, TIME IN AVALANCHE (ms) TC, CASE TEMPERATURE (°C)
Figure 11. Safe Operating Area
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)IAS, AVALANCHE CURRENT (A)
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
ID = 20 A
Ciss
Coss
Crss
VGS = 18 V
Figure 12. Single Pulse Maximum Power
Dissipation
t, PULSE WIDTH (sec)
P(PK), PEAK TRANSIENT POWER (W)
VDD = 390 V
RJC = 0.85°C/W
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
CAPACITANCE (pF)
Single Pulse
RJC = 0.88°C/W
TC = 25°C
100 ms/DC
1 ms
VDD = 650 V
VDD = 520 V
f = 1 MHz
VGS = 0 V
TJ = 25°C
100 s
Single Pulse
RJC = 0.85°C/W
TC = 25°C
10 ms
10 s
−6
0
6
9
15
18
0 255075100
1
10
100
1000
10000
0.1 1 10 100
1
10
100
0.001 0.01 0.1 1
0
10
20
30
40
50
25 50 75 100 125 150 175
0.1
1
10
100
0.1 1 10 100 1000
300
100
1000
10000
0.00001 0.0001 0.001 0.01 0.1 1
20000
12
3
−3
RDS(on) Limit
Thermal Limit
Package Limit
NVH4L060N065SC1
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6
TYPICAL CHARACTERISTICS
Figure 13. Junction−to−Case Thermal Response
t, RECTANGULAR PULSE DURATION (sec)
ZJC(t). EFFECTIVE TRANSIENT
THERMAL RESISTANCE (°C/W)
0.5 Duty Cycle
Single Pulse
0.2
0.1
0.05
0.02
0.01
PDM
t1
Notes:
RJC = 0.85°C/W
Peak TJ = PDM x ZJC(t) + TC
Duty Cycle, D = t1/t2
t2
0.01
0.1
1
0.00001 0.0001 0.001 0.01 10.1
NVH4L060N065SC1
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7
PACKAGE DIMENSIONS
TO−247−4LD
CASE 340CJ
ISSUE A
NVH4L060N065SC1
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8
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provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
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PUBLICATION ORDERING INFORMATION
TECHNICAL SUPPORT
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Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
LITERATURE FULFILLMENT:
Email Requests to: [email protected]
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For additional information, please contact your local Sales Representative
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