onsemi NVBLS001N06C User manual

Brand: onsemi

Model: NVBLS001N06C

Type: User manual

July, 2021 − Rev. 2

1Publication Order Number:

NVBLS001N06C/D

MOSFET - Power, Single

N-Channel, TOLL

60 V, 0.9 mW, 422 A

NVBLS001N06C

Features

•Low RDS(on) to Minimize Conduction Losses

•Low QG and Capacitance to Minimize Driver Losses

•Lowers Switching Noise/EMI

•AEC−Q101 Qualified and PPAP Capable

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter Symbol Value Unit

Drain−to−Source Voltage VDSS 60 V

Gate−to−Source Voltage VGS ±20 V

Continuous Drain

Current RqJC (Note 2)

Steady

State

TC = 25°CID422 A

TC = 100°C 298

Power Dissipation

RqJC (Note 2)

TC = 25°CPD284 W

TC = 100°C 142

Continuous Drain

Current RqJA

(Notes 1, 2) Steady

State

TA = 25°CID51 A

TA = 100°C 36

Power Dissipation

RqJA (Notes 1, 2)

TA = 25°CPD4.2 W

TA = 100°C 2.1

Pulsed Drain Current TA = 25°C, tp = 10 msIDM 900 A

Operating Junction and Storage Temperature

Range

TJ, Tstg −55 to

+175

°C

Source Current (Body Diode) IS236 A

Single Pulse Drain−to−Source Avalanche

Energy (IL(pk) = 39 A)

EAS 1640 mJ

Lead Temperature Soldering Reflow for Solder-

ing Purposes (1/8″ from case for 10 s)

TL260 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case − Steady State (Note 2) RqJC 0.53 °C/W

Junction−to−Ambient − Steady State (Note 2) RqJA 36

1. Surface−mounted on FR4 board using a 1 in2 pad size, 2 oz. Cu pad.

2. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

Device Package Shipping†

ORDERING INFORMATION

www.onsemi.com

NVBLS001N06C H−PSOF8L

(Pb−Free)

2000 / Tape &

Reel

H−PSOF8L

CASE 100CU

V(BR)DSS RDS(ON) MAX ID MAX

60 V 0.9 mW @ 10 V 422 A

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

NVBLS001N06C

www.onsemi.com

Table 1. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter Symbol Test Conditions Min Typ Max Units

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V(BR)DSS ID = 250 mA, VGS = 0 V 60 V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJID = 562 mA, ref to 25°C26 mV/°C

Zero Gate Voltage Drain Current IDSS VDS = 60 V,

VGS = 0 V

TJ = 25°C 10 mA

TJ = 125°C 100 mA

Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = 20 V 100 nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage VGS(th) VGS = VDS, ID = 562 mA2.0 2.8 4.0 V

Negative Threshold Temperature Coefficient VGS(th)/TJID = 562 mA, ref to 25°C9.9 mV/°C

Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 80 A 0.75 0.9 mW

Forward Transconductance gFS VDS = 5 V, ID = 80 A 290 S

CHARGES & CAPACTIANCES

Input Capacitance Ciss VGS = 0 V, VDS = 30 V, f = 10 kHz 11575 pF

Output Capacitance Coss 5973 pF

Reverse Transfer Capacitance Crss 76 pF

Total Gate Charge QG(tot) VGS = 10 V, VDS = 30 V,

ID = 80 A

143 nC

Threshold Gate Charge QG(th) 31 nC

Gate−to−Source Charge Qgs 54 nC

Gate−to−Drain Charge Qgd 13 nC

SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)

Turn−On Delay Time td(on) VGS = 10 V, VDS = 30 V,

ID = 80 A, RG = 6 W

34 ns

Rise Time tr53 ns

Turn−Off Delay Time td(off) 119 ns

Fall Time tf91 ns

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage VSD IS = 80 A, VGS = 0 V TJ = 25°C 0.79 1.2 V

IS = 80 A, VGS = 0 V TJ = 125°C 0.66 V

Reverse Recovery Time trr VGS = 0 V, dIS/dt = 100 A/ms,

IS = 56 A

120 ns

Charge Time ta60 ns

Discharge Time tb60 ns

Reverse Recovery Charge Qrr 322 nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Switching characteristics are independent of operating junction temperatures

NVBLS001N06C

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TYPICAL CHARACTERISTICS

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

TJ, JUNCTION TEMPERATURE (°C)

100755025

0.7

Figure 5. On−Resistance Variation with

Temperature

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

40302010

IDSS, LEAKAGE CURRENT (nA)

VGS = 10 V

ID = 80 A

1.4

1.6

1.0

150

100

175

10K

100K

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

1.00.5

800

1200

4.03.02.5

300

ID, DRAIN CURRENT (A)

TJ = 125°C

VGS = 6 V

TJ = −55°C

4.5 5.5

VGS = 5.0 V

2.0

200

1.5 3.0

6.0 V

200

600

400

VDS = 5 V

0.0

10 V & 8 V

100

ID, DRAIN CURRENT (A)

250100 200050

−50 6050

1000

3.5 5.0

VGS = 10 V

0.8

1.2

1.8

−25 125

RDS(on), NORMALIZED DRAIN−

SOURCE ON−RESISTANCE

150 300

TJ = 25°C

TJ = 85°C

TJ = 125°C

VGS = 0 V

TJ = 175°C

4.5 V

400

2.5

500

VGS, GATE−TO−SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

87.576.5

0.5

TJ = 25°C

ID = 80 A

2.25

1.5

1.75

1.0

94.5 5

0.75

1.25

2.0

5.5 8.5

VGS, GATE−TO−SOURCE VOLTAGE (V)

RDS(on), DRAIN−SOURCE RESISTANCE (mW)

3.0

2.5

109.5

RDS(on), DRAIN−SOURCE RESISTANCE (mW)

1.3

1.5

0.9

1.1

1.7

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

TJ = 150°C

7.0 V

700

1100

100

500

300

900

2.75

0.5

2.25

1.5

1.75

1.0

0.75

1.25

2.0

3.0

2.5

2.75

350 400

VGS = 7 V

VGS = 5.5 V

VGS = 5 V

NVBLS001N06C

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TYPICAL CHARACTERISTICS

Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total

Gate Charge

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

100

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

Figure 12. Avalanche Characteristics

CAPACITANCE (pF)

100K

10K

QG, TOTAL GATE CHARGE (nC)

VGS, GATE−TO−SOURCE VOLTAGE (V)

200

VGS = 0 V

TJ = 25°C

f = 10 kHz

Ciss

40 60 100

Coss

Crss

4030201006050

160120 140

QGS

VDS = 30 V

ID = 80 A

TJ = 25°C

RG, GATE RESISTANCE (W)VSD, SOURCE−TO−DRAIN VOLTAGE (V)

101

100

0.90.8 1.00.70.60.50.40.3

0.1

VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s)

10001010.1

0.1

100

1000

t, TIME (ns)

IS, SOURCE CURRENT (A)

ID, DRAIN CURRENT (A)

IPEAK (A)

VGS = 10 V

VDS = 30 V

ID = 80 A

td(off)

td(on)

VGS = 0 V

TJ = 25°C TJ = −55°C

TJ(initial) = 100°C

TJ(initial) = 25°C

0.01

RDS(on) Limit

Thermal Limit

Package Limit

10 ms

0.5 ms

1 ms

10 ms

Single Pulse

TC = 25°C

VGS ≤ 10 V

0.001

1000

TJ = 150°C

100

0.0001100

100

1000

100

1000

0.2 1.1

TJ = 175°C

QGD

NVBLS001N06C

www.onsemi.com

TYPICAL CHARACTERISTICS

0.001

0.1

100

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Figure 13. Thermal Characteristics (Junction−to−Ambient)

PULSE TIME (sec)

R(t) (°C/W)

Single Pulse

50% Duty Cycle

20%

10%

0.01

RqJA Steady State = 36°C/W

H−PSOF8L 11.68x9.80

CASE 100CU

ISSUE B

DATE 20 MAY 2022

A = Assembly Location

Y = Year

WW = Work Week

ZZ = Assembly Lot Code

XXXX = Specific Device Code

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may

or may not be present. Some products may

not follow the Generic Marking.

GENERIC

MARKING DIAGRAM*

AYWWZZ

XXXXXXXX

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

98AON13813G

DOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 1

H−PSOF8L 11.68x9.80

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