© Semiconductor Components Industries, LLC, 2019
July, 2021 − Rev. 2
1Publication Order Number:
NVBLS001N06C/D
MOSFET - Power, Single
N-Channel, TOLL
60 V, 0.9 mW, 422 A
NVBLS001N06C
Features
•Low RDS(on) to Minimize Conduction Losses
•Low QG and Capacitance to Minimize Driver Losses
•Lowers Switching Noise/EMI
•AEC−Q101 Qualified and PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 60 V
Gate−to−Source Voltage VGS ±20 V
Continuous Drain
Current RqJC (Note 2)
Steady
State
TC = 25°CID422 A
TC = 100°C 298
Power Dissipation
RqJC (Note 2)
TC = 25°CPD284 W
TC = 100°C 142
Continuous Drain
Current RqJA
(Notes 1, 2) Steady
State
TA = 25°CID51 A
TA = 100°C 36
Power Dissipation
RqJA (Notes 1, 2)
TA = 25°CPD4.2 W
TA = 100°C 2.1
Pulsed Drain Current TA = 25°C, tp = 10 msIDM 900 A
Operating Junction and Storage Temperature
Range
TJ, Tstg −55 to
+175
°C
Source Current (Body Diode) IS236 A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 39 A)
EAS 1640 mJ
Lead Temperature Soldering Reflow for Solder-
ing Purposes (1/8″ from case for 10 s)
TL260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case − Steady State (Note 2) RqJC 0.53 °C/W
Junction−to−Ambient − Steady State (Note 2) RqJA 36
1. Surface−mounted on FR4 board using a 1 in2 pad size, 2 oz. Cu pad.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
Device Package Shipping†
ORDERING INFORMATION
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NVBLS001N06C H−PSOF8L
(Pb−Free)
2000 / Tape &
Reel
H−PSOF8L
CASE 100CU
S
G
D
V(BR)DSS RDS(ON) MAX ID MAX
60 V 0.9 mW @ 10 V 422 A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NVBLS001N06C
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2
Table 1. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter Symbol Test Conditions Min Typ Max Units
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS ID = 250 mA, VGS = 0 V 60 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJID = 562 mA, ref to 25°C26 mV/°C
Zero Gate Voltage Drain Current IDSS VDS = 60 V,
VGS = 0 V
TJ = 25°C 10 mA
TJ = 125°C 100 mA
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = 20 V 100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage VGS(th) VGS = VDS, ID = 562 mA2.0 2.8 4.0 V
Negative Threshold Temperature Coefficient VGS(th)/TJID = 562 mA, ref to 25°C9.9 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 80 A 0.75 0.9 mW
Forward Transconductance gFS VDS = 5 V, ID = 80 A 290 S
CHARGES & CAPACTIANCES
Input Capacitance Ciss VGS = 0 V, VDS = 30 V, f = 10 kHz 11575 pF
Output Capacitance Coss 5973 pF
Reverse Transfer Capacitance Crss 76 pF
Total Gate Charge QG(tot) VGS = 10 V, VDS = 30 V,
ID = 80 A
143 nC
Threshold Gate Charge QG(th) 31 nC
Gate−to−Source Charge Qgs 54 nC
Gate−to−Drain Charge Qgd 13 nC
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)
Turn−On Delay Time td(on) VGS = 10 V, VDS = 30 V,
ID = 80 A, RG = 6 W
34 ns
Rise Time tr53 ns
Turn−Off Delay Time td(off) 119 ns
Fall Time tf91 ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD IS = 80 A, VGS = 0 V TJ = 25°C 0.79 1.2 V
IS = 80 A, VGS = 0 V TJ = 125°C 0.66 V
Reverse Recovery Time trr VGS = 0 V, dIS/dt = 100 A/ms,
IS = 56 A
120 ns
Charge Time ta60 ns
Discharge Time tb60 ns
Reverse Recovery Charge Qrr 322 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures
NVBLS001N06C
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3
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
TJ, JUNCTION TEMPERATURE (°C)
100755025
0.7
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
40302010
IDSS, LEAKAGE CURRENT (nA)
VGS = 10 V
ID = 80 A
1.4
0
1.6
0
1.0
150
1K
100
10
175
10K
1M
100K
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1.00.5
0
800
1200
4.03.02.5
0
300
ID, DRAIN CURRENT (A)
TJ = 125°C
VGS = 6 V
TJ = −55°C
4.5 5.5
VGS = 5.0 V
2.0
200
1.5 3.0
6.0 V
200
600
400
VDS = 5 V
0.0
10 V & 8 V
100
ID, DRAIN CURRENT (A)
250100 200050
−50 6050
1000
3.5 5.0
VGS = 10 V
0.8
1.2
1.8
−25 125
RDS(on), NORMALIZED DRAIN−
SOURCE ON−RESISTANCE
150 300
TJ = 25°C
TJ = 85°C
TJ = 125°C
VGS = 0 V
TJ = 175°C
4.5 V
400
2.5
500
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
87.576.5
0.5
TJ = 25°C
ID = 80 A
2.25
1.5
1.75
6
1.0
94.5 5
0.75
1.25
2.0
5.5 8.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−SOURCE RESISTANCE (mW)
3.0
2.5
109.5
RDS(on), DRAIN−SOURCE RESISTANCE (mW)
1.3
1.5
0.9
1.1
1.7
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ = 150°C
7.0 V
700
1100
100
500
300
900
2.75
0.5
2.25
1.5
1.75
1.0
0.75
1.25
2.0
3.0
2.5
2.75
350 400
VGS = 7 V
VGS = 5.5 V
VGS = 5 V
NVBLS001N06C
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4
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total
Gate Charge
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
100
1K
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Avalanche Characteristics
CAPACITANCE (pF)
100K
10K
QG, TOTAL GATE CHARGE (nC)
0
2
VGS, GATE−TO−SOURCE VOLTAGE (V)
10
200
6
8
80
VGS = 0 V
TJ = 25°C
f = 10 kHz
Ciss
40 60 100
4
Coss
Crss
10
4030201006050
1
3
11
7
9
5
160120 140
QGS
VDS = 30 V
ID = 80 A
TJ = 25°C
RG, GATE RESISTANCE (W)VSD, SOURCE−TO−DRAIN VOLTAGE (V)
101
10
100
0.90.8 1.00.70.60.50.40.3
0.1
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s)
10001010.1
0.1
10
100
1000
1
10
t, TIME (ns)
IS, SOURCE CURRENT (A)
ID, DRAIN CURRENT (A)
IPEAK (A)
VGS = 10 V
VDS = 30 V
ID = 80 A
td(off)
td(on)
tf
tr
VGS = 0 V
TJ = 25°C TJ = −55°C
TJ(initial) = 100°C
TJ(initial) = 25°C
0.01
RDS(on) Limit
Thermal Limit
Package Limit
10 ms
0.5 ms
1 ms
10 ms
Single Pulse
TC = 25°C
VGS ≤ 10 V
0.001
1000
TJ = 150°C
10
100
0.0001100
1
QT
100
1000
1
100
1000
0.2 1.1
TJ = 175°C
QGD
H−PSOF8L 11.68x9.80
CASE 100CU
ISSUE B
DATE 20 MAY 2022
A = Assembly Location
Y = Year
WW = Work Week
ZZ = Assembly Lot Code
XXXX = Specific Device Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXXX
XXXXXXXX
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
98AON13813G
DOCUMENT NUMBER:
DESCRIPTION:
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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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H−PSOF8L 11.68x9.80
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