Vishay IRF9610 Operating instructions

Brand: Vishay

Model: IRF9610

Type: Operating instructions

Vishay IRF9610 is a P-Channel MOSFET designed to meet the highest standards in power conversion and motor drive applications. It features a maximum drain current of -7A, an on-resistance of 11mOhms, and a fast switching speed. The IRF9610 is also easy to drive and can be paralleled for increased power handling.

IRF9610

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S21-0867-Rev. C, 16-Aug-2021 1Document Number: 91080

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Power MOSFET

FEATURES

• Dynamic dV/dt rating

•P-channel

• Fast switching

• Ease of paralleling

• Simple drive requirements

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note

This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details

DESCRIPTION

The power MOSFETs technology is the key to Vishay’s

advanced line of Power MOSFET transistors. The efficient

geometry and unique processing of the Power MOSFETs

design achieve very low on-state resistance combined with

high transconductance and extreme device ruggedness.

The TO-220AB package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220AB contribute to its

wide acceptance throughout the industry.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5)

b. Not applicable

c. ISD ≤ -1.8 A, dI/dt ≤ 70 A/μs, VDD ≤ VDS, TJ ≤ 150 °C

d. 1.6 mm from case

PRODUCT SUMMARY

VDS (V) -200

RDS(on) (Ω)V

GS = -10 V 3.0

Qg max. (nC) 11

Qgs (nC) 7.0

Qgd (nC) 4.0

Configuration Single

P-Channel MOSFET

TO-220AB

Available

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free IRF9610PbF

Lead (Pb)-free and halogen-free IRF9610PbF-BE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-source voltage VDS -200 V

Gate-source voltage VGS ± 20

Continuous drain current VGS at 10 V TC = 25 °C ID

-1.8

ATC = 100 °C -1.0

Pulsed drain current a IDM -7.0

Linear derating factor 0.16 W/°C

Single pulse avalanche energy bPD20 W

Repetitive avalanche current a ILM -7.0 A

Repetitive avalanche energy adV/dt -5.0 V/ns

Maximum power dissipation TC = 25 °C TJ, Tstg -55 to +150 °C

Peak diode recovery dV/dt c300

Operating junction and storage temperature range 10 lbf · in

Soldering recommendations (peak temperature) dFor 10 s 1.1 N · m

IRF9610

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S21-0867-Rev. C, 16-Aug-2021 2Document Number: 91080

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5)

b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum junction-to-ambient RthJA -62

°C/WCase-to-sink, flat, greased surface RthCS 0.50 -

Maximum junction-to-case (drain) RthJC -6.4

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-source breakdown voltage VDS VGS = 0 V, ID = -250 μA -200 - - V

VDS temperature coefficient ΔVDS/TJ Reference to 25 °C, ID = -1 mA - -0.23 - V/°C

Gate-source threshold voltage VGS(th) VDS = VGS, ID = -250 μA -2.0 - -4.0 V

Gate-source leakage IGSS V

GS = ± 20 V - - ± 100 nA

Zero gate voltage drain current IDSS

VDS = -200 V, VGS = 0 V - - -100 μA

VDS = -160 V, VGS = 0 V, TJ = 125 °C - - -500

Drain-source on-state resistance RDS(on) V

GS = -10 V ID = -0.90 A b --3.0Ω

Forward transconductance gfs VDS = -50 V, ID = -0.90 A b 0.90 - - S

Dynamic

Input capacitance Ciss VGS = 0 V,

VDS = -25 V,

f = 1.0 MHz, see fig. 10

-170-

pFOutput capacitance Coss -50-

Reverse transfer capacitance Crss -15-

Total gate charge Qg

VGS = -10 V ID = -3.5 A, VDS = -160 V,

see fig. 11 and 18 b

--11

nC Gate-source charge Qgs --7.0

Gate-drain charge Qgd --4.0

Turn-on delay time td(on)

VDD = -100 V, ID = -0.90 A,

Rg = 50 Ω, RD = 110 Ω, see fig. 17 b

-8.0-

Rise time tr -15-

Turn-off delay time td(off) -10-

Fall time tf -8.0-

Gate input resistance Rgf = 1 MHz, open drain 2.5 - 14.3 Ω

Internal drain inductance LD Between lead,

6 mm (0.25") from

package and center of

die contact

-4.5-

Internal source inductance LS-7.5-

Drain-Source Body Diode Characteristics

Continuous source-drain diode current IS

MOSFET symbol

showing the

integral reverse

p - n junction diode

---1.8

Pulsed diode forward current aISM ---7.0

Body diode voltage VSD TJ = 25 °C, IS = -1.8 A, VGS = 0 V b---5.8V

Body diode reverse recovery time trr TJ = 25 °C, IF = -1.8 A, dI/dt = 100 A/μs b - 240 360 ns

Body diode reverse recovery charge Qrr -1.72.6μC

Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

IRF9610

www.vishay.com Vishay Siliconix

S21-0867-Rev. C, 16-Aug-2021 3Document Number: 91080

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Transfer Characteristics

Fig. 3 - Typical Saturation Characteristics

Fig. 4 - Maximum Safe Operating Area

Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration

91080_01 V

, Drain-to-Source Voltage (V)

, Drain Current (A)

- 10

- 2.40

- 4 V

- 6 V

- 5 V

= - 10, - 9, - 8, - 7 V

- 1.92

- 1.44

- 0.96

- 0.48

0.00

0- 20 - 30 - 40 - 50

80 µs Pulse Test

GS,

Gate-to-Source Voltage (V)

, Drain Current (A)

80 µs Pulse Test

VDS > ID(on) x RDS(on) max.

91080_02

- 2

- 2.40

- 1.92

- 1.44

- 0.96

- 0.48

0.00

0 - 4 - 6 - 8 - 10

= - 55

= 25

= 125

80 µs Pulse Test

ID, Drain Current (A)

VDS, Drain-to-Source Voltage (V)

91080_03

- 4 V

- 6 V

- 5 V

= - 10, - 9, - 8 V

- 7 V

- 2

- 2.40

- 1.92

- 1.44

- 0.96

- 0.48

0.00

0 - 4 - 6 - 8 - 10

100 µs

1 ms

10 ms

Operation in this area limited

by RDS(on)

Negative VDS, Drain-to-Source Voltage (V)

Negative ID, Drain Current (A)

TC = 25 °C

TJ = 150 °C

Single Pulse

102

0.1

110

102103

91080_04

2.0

1.0

0.1

10-5 10-4 10-3 10-2 0.1 1.0 10

PDM

t1, Square Wave Pulse Duration (s)

ZthJC(t)/RthJC, Normalized Effective Transient

Notes:

1. Duty Factor, D = t1/t2

2. Per Unit Base = RthJC = 6.4 °C/W

3. TJM - TC = PDM ZthJC(t)

0.2

0.05

0.02

0.01

91080_05

0.1

D = 0.5

0.5

0.2

0.05

0.02

0.01 25 25 25 25 25 25

Thermal Impedence (Per Unit)

Single Pulse (Transient

Thermal Impedence)

IRF9610

www.vishay.com Vishay Siliconix

S21-0867-Rev. C, 16-Aug-2021 4Document Number: 91080

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Fig. 6 - Typical Transconductance vs. Drain Current

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Breakdown Voltage vs. Temperature

Fig. 9 - Normalized On-Resistance vs. Temperature

Fig. 10 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 11 - Typical Gate Charge vs. Gate-to-Source Voltage

2.0

,Transconductance (S)

Drain Current (A)

- 0.48 - 0.96 - 1.44 - 1.92 - 2.40

TJ = 25

TJ = - 55

91080_06

TJ = 125

80 µs Pulse Test

VDS > ID(on) x RDS(on) max.

1.6

1.2

0.8

0.4

0.0

TJ = 25 °C

TJ = 150 °C

- 10.0

, Source-to-Drain Voltage (V)

, Drain Current (A)

- 2.0 - 6.8

- 5.6- 4.4- 3.2

91080_07

- 0.1

- 0.2

- 0.5

- 1.0

- 2.0

- 5.0

- 8.0

91080_08 TJ, Junction Temperature (°C)

BVDSS, Drain-to-Source Breakdown

1.25

Voltage (Normalized)

1.15

0.75

0.85

0.95

1.05

- 40 160

120

80400

91080_09 TJ, Junction Temperature (°C)

RDS(on), Drain-to-Source On Resistance

2.5

(Normalized)

2.0

0.0

0.5

1.0

1.5

- 40 160

12080400

= - 0.6 A

= - 10 V

91080_10 VDS, Drain-to-Source Voltage (V)

C, Capacitance (pF)

500

100

200

300

400

0 - 50- 40- 30- 20

- 10

Ciss

Crss

Coss

VGS = 0 V, f = 1 MHz

Ciss = Cgs + Cgd, Cds Shorted

Crss = Cgd

Coss = Cds + Cgs, Cgd

Cgs + Cgd

≈ Cgs + Cgd

, Total Gate Charge (nC)

Negative V

, Gate-to-Source Voltage (V)

02 86

= - 40 V

= - 60 V

For test circuit

see figure 18

= - 100 V

91080_11

= - 1.8 A

IRF9610

www.vishay.com Vishay Siliconix

S21-0867-Rev. C, 16-Aug-2021 5Document Number: 91080

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 12 - Typical On-Resistance vs. Drain Current

Fig. 13 - Maximum Drain Current vs. Case Temperature

Fig. 14 - Power vs. Temperature Derating Curve

Fig. 15 - Clamped Inductive Test Circuit

Fig. 16 - Clamped Inductive Waveforms

Fig. 17a - Switching Time Test Circuit

Fig. 17b - Switching Time Waveforms

91080_12 ID, Drain Current (A)

RDS(on), Drain-to-Source

7RDS(on) measured with current pulse of

2.0 µs duration. Initial TJ = 25 °C.

(Heating effect of 2.0 µs pulse is minimal.)

0- 7

- 6

- 1 - 2 - 3 - 4 - 5

On Resistance (Ω)

= - 10 V

= - 20 V

150

Negative ID, Drain Current (A)

TC, Case Temperature (°C)

0.0

0.4

0.8

1.2

1.6

2.0

91080_13

1251007550

, Case Temperature (°C)

, Power Dissipation (W)

0 20 100806040

91080_14

140

120

0.05 Ω

D.U.T.

VGS = - 10 V

Var y tp to obtain

required IL

VDD = 0.5 VDS EC = 0.75 VDS

VDD

VDS

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

D.U.T.

- 10 V

VGS

10 %

90 %

VDS

td(on) trtd(off) tf

IRF9610

www.vishay.com Vishay Siliconix

S21-0867-Rev. C, 16-Aug-2021 6Document Number: 91080

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 18a - Basic Gate Charge Waveform

Fig. 18b - Gate Charge Test Circuit

Fig. 19 - For P-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?91080.

QGS QGD

Charge

15 V

D.U.T.

- 3 mA

VGS

VDS

IGID

0.3 µF

0.2 µF

50 kΩ

12 V

Current regulator

Current sampling resistors

Same type as D.U.T.

P.W. Period

dI/dt

Diode recovery

dV/dt

Body diode forward drop

Body diode forward

current

Driver gate drive

Inductor current

D = P.W.

Period

Peak Diode Recovery dV/dt Test Circuit

• dV/dt controlled by Rg

• D.U.T. - device under test

D.U.T.

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

• Compliment N-Channel of D.U.T. for driver

VDD

• ISD controlled by duty factor “D”

Note

a. VGS = - 5 V for logic level and - 3 V drive devices

VGS = - 10 Va

D.U.T. lSD waveform

D.U.T. VDS waveform

VDD

Re-applied

voltage

Ripple ≤ 5 % ISD

Reverse

recovery

current

Package Information

www.vishay.com Vishay Siliconix

Revison: 14-Dec-15 1Document Number: 66542

For technical questions, contact: hvm@vishay.com

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TO-220-1

Note

• M* = 0.052 inches to 0.064 inches (dimension including

protrusion), heatsink hole for HVM

L(1)

H(1)

Ø P

J(1)

b(1)

e(1)

DIM. MILLIMETERS INCHES

MIN. MAX. MIN. MAX.

A 4.24 4.65 0.167 0.183

b 0.69 1.02 0.027 0.040

b(1) 1.14 1.78 0.045 0.070

c 0.36 0.61 0.014 0.024

D 14.33 15.85 0.564 0.624

E 9.96 10.52 0.392 0.414

e 2.41 2.67 0.095 0.105

e(1) 4.88 5.28 0.192 0.208

F 1.14 1.40 0.045 0.055

H(1) 6.10 6.71 0.240 0.264

J(1) 2.41 2.92 0.095 0.115

L 13.36 14.40 0.526 0.567

L(1) 3.33 4.04 0.131 0.159

Ø P 3.53 3.94 0.139 0.155

Q2.54 3.00 0.100 0.118

ECN: X15-0364-Rev. C, 14-Dec-15

DWG: 6031

Package Picture

ASE Xi’an

Legal Disclaimer Notice

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Revision: 09-Jul-2021 1Document Number: 91000

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Vishay IRF9610 Operating instructions

Vishay IRF9610 Operating instructions

Vishay IRF9610 Operating instructions

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