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IRF520

Vishay IRF520 User manual

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IRF520
www.vishay.com Vishay Siliconix
S21-0819-Rev. C, 02-Aug-2021 1Document Number: 91017
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
FEATURES
• Dynamic dV/dt rating
• Repetitive avalanche rated
• 175 °C operating temperature
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = 25 V, starting TJ = 25 °C, L = 3.5 mH, Rg = 25 Ω, IAS = 9.2 A (see fig. 12)
c. ISD ≤ 9.2 A, dI/dt ≤ 110 A/μs, VDD ≤ VDS, TJ ≤ 175 °C
d. 1.6 mm from case
PRODUCT SUMMARY
VDS (V) 100
RDS(on) (Ω)V
GS = 10 V 0.27
Qg max. (nC) 16
Qgs (nC) 4.4
Qgd (nC) 7.7
Configuration Single
N-Channel MOSFET
G
D
S
TO-220AB
GD
S
Available
Available
Available
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free IRF520PbF
Lead (Pb)-free and halogen-free IRF520PbF-BE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 100 V
Gate-source voltage VGS ± 20
Continuous drain current VGS at 10 V TC = 25 °C ID
9.2
ATC = 100 °C 6.5
Pulsed drain current a IDM 37
Linear derating factor 0.40 W/°C
Single pulse avalanche energy bEAS 200 mJ
Repetitive avalanche current a IAR 9.2 A
Repetitive avalanche energy aEAR 6.0 mJ
Maximum power dissipation TC = 25 °C PD60 W
Peak diode recovery dV/dt cdV/dt 5.5 V/ns
Operating junction and storage temperature range TJ, Tstg -55 to +175 °C
Soldering recommendations (peak temperature) dFor 10 s 300
Mounting torque 6-32 or M3 screw 10 lbf · in
1.1 N · m
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IRF520
www.vishay.com Vishay Siliconix
S21-0819-Rev. C, 02-Aug-2021 2Document Number: 91017
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum junction-to-ambient RthJA -62
°C/WCase-to-sink, flat, greased surface RthCS 0.50 -
Maximum junction-to-case (drain) RthJC -2.5
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 100 - - V
VDS temperature coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.13 - V/°C
Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V
Gate-source leakage IGSS V
GS = ± 20 V - - ± 100 nA
Zero gate voltage drain current IDSS
VDS = 100 V, VGS = 0 V - - 25 μA
VDS = 80 V, VGS = 0 V, TJ = 150 °C - - 250
Drain-source on-state resistance RDS(on) V
GS = 10 V ID = 5.5 A b --
0.27 Ω
Forward transconductance gfs VDS = 50 V, ID = 5.5 A b 2.7 - - S
Dynamic
Input capacitance Ciss VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-360-
pFOutput capacitance Coss -150-
Reverse transfer capacitance Crss -34-
Total gate charge Qg
VGS = 10 V ID = 9.2 A, VDS = 80 V,
see fig. 6 and 13 b
--16
nC Gate-source charge Qgs --4.4
Gate-drain charge Qgd --7.7
Turn-on delay time td(on)
VDD = 50 V, ID = 9.2 A,
Rg = 18 Ω, RD = 5.2 Ω, see fig. 10 b
-8.8-
ns
Rise time tr -30-
Turn-off delay time td(off) -19-
Fall time tf -20-
Gate input resistance Rgf = 1 MHz, open drain 1.0 - 5.0 Ω
Internal drain inductance LD Between lead,
6 mm (0.25") from
package and center of
die contact
-4.5-
nH
Internal source inductance LS-7.5-
Drain-Source Body Diode Characteristics
Continuous source-drain diode current ISMOSFET symbol
showing the
integral reverse
p - n junction diode
--9.2
A
Pulsed diode forward current aISM --37
Body diode voltage VSD TJ = 25 °C, IS = 9.2 A, VGS = 0 V b --
1.8 V
Body diode reverse recovery time trr TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μs b -110 260 ns
Body diode reverse recovery charge Qrr -0.53 1.3 μC
Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
D
S
G
S
D
G
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IRF520
www.vishay.com Vishay Siliconix
S21-0819-Rev. C, 02-Aug-2021 3Document Number: 91017
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, TC = 175 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
91017_01
Bottom
To p
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
20 µs Pulse Width
TC = 25 °C
4.5 V
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
101
100
10-1 100101
V
DS,
Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
4.5 V
Bottom
To p
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
20 µs Pulse Width
TC = 175 °C
91017_02
101
100
10-1 100101
20 µs Pulse Width
VDS = 50 V
ID, Drain Current (A)
VGS, Gate-to-Source Voltage (V)
56 78910
4
25 °C
175 °C
91017_03
101
100
I
D
= 9.2 A
V
GS
= 10 V
3.0
0.0
0.5
1.0
1.5
2.0
2.5
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
T
J,
Junction Temperature (°C)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
91017_04
180
750
600
450
300
0
150
100101
Capacitance (pF)
V
DS,
Drain-to-Source Voltage (V)
Ciss
Crss
Coss
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
91017_05
Q
G
, Total Gate Charge (nC)
V
GS
, Gate-to-Source Voltage (V)
20
16
12
8
0
4
0420
1612
8
I
D
= 9.2 A
For test circuit
see figure 13
91017_06
V
DS
= 20 V
V
DS
= 50 V
V
DS
= 80 V
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IRF520
www.vishay.com Vishay Siliconix
S21-0819-Rev. C, 02-Aug-2021 4Document Number: 91017
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
101
100
V
SD
, Source-to-Drain Voltage (V)
I
SD
, Reverse Drain Current (A)
25 °C
175 °C
V
GS
= 0 V
91017_07
0.5 0.90.80.70.6 1.0 1.21.1
10-1
102
10 µs
100 µs
1 ms
10 ms
Operation in this area limited
by RDS(on)
VDS, Drain-to-Source Voltage (V)
ID, Drain Current (A)
TC = 25 °C
TJ = 175 °C
Single Pulse
0.1
103
0.1
2
5
1
2
5
10
2
5
2
5
25
125
10 25
10225
103
91017_08
ID, Drain Current (A)
TC, Case Temperature (°C)
0
2
4
6
8
10
25 1751501007550
91017_09
125
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
10 V
+
-
V
DS
V
DD
VDS
VGS
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IRF520
www.vishay.com Vishay Siliconix
S21-0819-Rev. C, 02-Aug-2021 5Document Number: 91017
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
10
1
0.1
10-2
10-5 10-4 10-3 10-2 0.1 1 10
PDM
t1
t2
t
1
, Rectangular Pulse Duration (s)
Thermal Response (Z
thJC
)
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
Single Pulse
(Thermal Response)
0 - 0.5
0.2
0.1
0.05
0.02
0.01
91017_11
R
G
I
AS
0.01 Ω
t
p
D.U.T
L
V
DS
+
-V
DD
A
10 V
Var y tp to obtain
required IAS
IAS
VDS
VDD
VDS
tp
600
0
100
200
300
400
500
25 1501251007550
Starting T
J
, Junction Temperature (°C)
E
AS
, Single Pulse Energy (mJ)
Bottom
To p
ID
3.8 A
6.5 A
9.2 A
VDD = 25 V
91017_12c
175
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IRF520
www.vishay.com Vishay Siliconix
S21-0819-Rev. C, 02-Aug-2021 6Document Number: 91017
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91017.
QGS QGD
QG
V
G
Charge
10 V
D.U.T.
3 mA
VGS
VDS
IGID
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
P.W. Period
dI/dt
Diode recovery
dV/dt
Ripple ≤ 5 %
Body diode forward drop
Re-applied
voltage
Reverse
recovery
current
Body diode forward
current
VGS = 10 Va
ISD
Driver gate drive
D.U.T. lSD waveform
D.U.T. VDS waveform
Inductor current
D = P.W.
Period
+
-
+
+
+
-
-
-
Peak Diode Recovery dV/dt Test Circuit
VDD
• dV/dt controlled by Rg
• Driver same type as D.U.T.
• ISD controlled by duty factor “D”
• D.U.T. - device under test
D.U.T. Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
Rg
Note
a. VGS = 5 V for logic level devices
VDD
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Package Information
www.vishay.com Vishay Siliconix
Revison: 04-Nov-2021 1Document Number: 66542
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TO-220-1
Note
• M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM
DIM. MILLIMETERS INCHES
MIN. MAX. MIN. MAX.
A 4.24 4.65 0.167 0.183
b 0.69 1.02 0.027 0.040
b(1) 1.14 1.78 0.045 0.070
c 0.36 0.61 0.014 0.024
D 14.33 15.85 0.564 0.624
E 9.96 10.52 0.392 0.414
e 2.41 2.67 0.095 0.105
e(1) 4.88 5.28 0.192 0.208
F 1.14 1.40 0.045 0.055
H(1) 6.10 6.71 0.240 0.264
J(1) 2.41 2.92 0.095 0.115
L 13.36 14.40 0.526 0.567
L(1) 3.33 4.04 0.131 0.159
Ø P 3.53 3.94 0.139 0.155
Q 2.54 3.00 0.100 0.118
ECN: E21-0621-Rev. D, 04-Nov-2021
DWG: 6031
M
*
3
2
1
L
L(1)
D
H(1)
Q
Ø P
A
F
J(1)
b(1)
e(1)
e
E
b
C
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Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 01-Jan-2022 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
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© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
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