onsemi NVH4L060N065SC1 Owner's manual

Brand: onsemi

Model: NVH4L060N065SC1

Type: Owner's manual

The onsemi NVH4L060N065SC1 is an N-Channel MOSFET that offers high performance and efficiency in various applications. With a 650 V breakdown voltage and 47 A continuous drain current, it can handle high power and is suitable for demanding applications. Its ultra-low gate charge and low capacitance minimize switching losses, leading to improved efficiency and faster switching speeds. The device also features avalanche capability, making it rugged and reliable in harsh conditions. The TO247-4L package provides excellent thermal performance, allowing for efficient heat dissipation.

DATA SHEET

www.onsemi.com

January, 2022 − Rev. 1

1Publication Order Number:

NVH4L060N065SC1/D

MOSFET - SiC Power, Single

N-Channel, TO247-4L

650 V, 44 mW, 47 A

NVH4L060N065SC1

Features

•Typ. RDS(on) = 44 m @ VGS = 18 V

Typ. RDS(on) = 60 m @ VGS = 15 V

•Ultra Low Gate Charge (QG(tot) = 74 nC)

•Low Capacitance (Coss = 133 pF)

•100% Avalanche Tested

•AEC−Q101 Qualified and PPAP Capable

•This Device is Pb−Free and is RoHS Compliant

Typical Applications

•Automotive On Board Charger

•Automotive DC/DC Converter for EV/HEV

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter Symbol Value Unit

Drain−to−Source Voltage VDSS 650 V

Gate−to−Source Voltage VGS −8/+22 V

Recommended Operation Values

of Gate−to−Source Voltage

TC < 175°C VGSop −5/+18 V

Continuous Drain

Current (Note 1)

Steady

State

TC = 25°CID47 A

Power Dissipation

(Note 1)

PD176 W

Continuous Drain

Current (Note 1)

Steady

State

TC = 100°CID33 A

Power Dissipation

(Note 1)

PD88 W

Pulsed Drain Current

(Note 2)

TC = 25°C IDM 152 A

Operating Junction and Storage Temperature

Range

TJ, Tstg −55 to

+175

°C

Source Current (Body Diode) IS35 A

Single Pulse Drain−to−Source Avalanche

Energy (IL(pk) = 10.1 A, L = 1 mH) (Note 3)

EAS 51 mJ

Maximum Lead Temperature for Soldering

(1/8″ from case for 5 s)

TL260 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Repetitive rating, limited by max junction temperature.

3. EAS of 51 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 10.1 A,

VDD = 50 V, VGS = 18 V.

V(BR)DSS RDS(ON) MAX ID MAX

650 V 70 m @ 18 V 47 A

N−CHANNEL MOSFET

TO247−4L

CASE 340CJ

ORDERING INFORMATION

Device Package Shipping

NVH4L060N065SC1 TO247−4L 30 Units /

Tube

H4L060065SC1 = Specific Device Code

A = Assembly Location

Y = Year

WW = Work Week

ZZ = Lot Traceability

H4L060

065SC1

AYWWZZ

MARKING DIAGRAM

S1: Kelvin Source

S2: Power Source

NVH4L060N065SC1

www.onsemi.com

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Max Unit

Junction−to−Case − Steady State (Note 1) RJC 0.85 °C/W

Junction−to−Ambient − Steady State (Note 1) RJA 40

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 1 mA 650 − − V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJID = 20 mA, referenced to 25°C−0.15 −V/°C

Zero Gate Voltage Drain Current IDSS VGS = 0 V,

VDS = 650 V

TJ = 25°C− − 10 A

TJ = 175°C− − 1 mA

Gate−to−Source Leakage Current IGSS VGS = +18/−5 V, VDS = 0 V − − 250 nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 6.5 mA 1.8 2.8 4.3 V

Recommended Gate Voltage VGOP −5−+18 V

Drain−to−Source On Resistance RDS(on) VGS = 15 V, ID = 20 A, TJ = 25°C−60 −m

VGS = 18 V, ID = 20 A, TJ = 25°C−44 70

VGS = 18 V, ID = 20 A, TJ = 175°C−50 −

Forward Transconductance gFS VDS = 10 V, ID = 20 A −12 −S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance CISS VGS = 0 V, f = 1 MHz, VDS = 325 V −1473 −pF

Output Capacitance COSS −133 −

Reverse Transfer Capacitance CRSS −13 −

Total Gate Charge QG(TOT) VGS = −5/18 V, VDS = 520 V,

ID = 20 A

−74 −nC

Gate−to−Source Charge QGS −20 −

Gate−to−Drain Charge QGD −23 −

Gate−Resistance RGf = 1 MHz −3.9 −

SWITCHING CHARACTERISTICS

Turn−On Delay Time td(ON) VGS = −5/18 V,

VDS = 400 V,

ID = 20 A,

RG = 2.2 

inductive load

−11 −ns

Rise Time tr−14 −

Turn−Off Delay Time td(OFF) −24 −

Fall Time tf−11 −

Turn−On Switching Loss EON −45 −J

Turn−Off Switching Loss EOFF −18 −

Total Switching Loss Etot −63 −

DRAIN−SOURCE DIODE CHARACTERISTICS

Continuous Drain−Source Diode Forward

Current

ISD VGS = −5 V, TJ = 25°C− − 35 A

Pulsed Drain−Source Diode Forward

Current (Note 2)

ISDM − − 152

Forward Diode Voltage VSD VGS = −5 V, ISD = 20 A, TJ = 25°C−4.3 −V

NVH4L060N065SC1

www.onsemi.com

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued)

Parameter UnitMaxTypMinTest ConditionSymbol

DRAIN−SOURCE DIODE CHARACTERISTICS

Reverse Recovery Time tRR VGS = −5/18 V, ISD = 20 A,

dIS/dt = 1000 A/s

−17.7 −ns

Reverse Recovery Charge QRR −90.6 −nC

Reverse Recovery Energy EREC −8.7 −J

Peak Reverse Recovery Current IRRM −10.2 −A

Charge time Ta −9.8 −ns

Discharge time Tb −7.8 −ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

NVH4L060N065SC1

www.onsemi.com

TYPICAL CHARACTERISTICS

15 V

Figure 1. On−Region Characteristics Figure 2. Normalized On−Resistance vs. Drain

Current and Gate Voltage

VDS, DRAIN−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 3. On−Resistance Variation with

Temperature

Figure 4. On−Resistance vs. Gate−to−Source

Voltage

TJ, JUNCTION TEMPERATURE (°C) VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics Figure 6. Diode Forward Voltage vs. Current

VGS, GATE−TO−SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)

ID, DRAIN CURRENT (A)

RDS(on), NORMALIZED DRAIN−TO−

SOURCE ON−RESISTANCE

RDS(on), NORMALIZED DRAIN−TO−

SOURCE RESISTANCE

IS, REVERSE DRAIN CURRENT (A)

8 V

12 V

10 V

VGS = 18 V

VGS = 12 V

ID = 20 A

VGS = 18 V

TJ = 25°C

ID = 20 A

VDS = 10 V

TJ = 175°C

TJ = 25°C

RDS(on), ON−RESISTANCE (m)

ID, DRAIN CURRENT (A)

TJ = −55°C

TJ = 175°C

TJ = 25°C

TJ = 150°C

TJ = −55°C

VGS = −5 V

9 V

18 V

012345678910

0.7

0.9

1.0

1.1

1.2

1.3

1.7

−75 −50 −25 0 25 50 75 100 125 150 175

140

240

8 9 10 11 12 13 14 15 16 17 18

100

4 6 10 12 18

0.5

1.0

2.0

4.0

5.0

010203040

100

2345678

7 V

3.0

15 V

200

0.8

1.4

1.5

1.6

81416

1.5

2.5

3.5

4.5

NVH4L060N065SC1

www.onsemi.com

TYPICAL CHARACTERISTICS

Figure 7. Gate−to−Source Voltage vs. Total

Charge

Figure 8. Capacitance vs. Drain−to−Source

Voltage

Qg, GATE CHARGE (nC)

Figure 9. Unclamped Inductive Switching

Capability

Figure 10. Maximum Continuous Drain

Current vs. Case Temperature

tAV, TIME IN AVALANCHE (ms) TC, CASE TEMPERATURE (°C)

Figure 11. Safe Operating Area

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

VGS, GATE−TO−SOURCE VOLTAGE (V)IAS, AVALANCHE CURRENT (A)

ID, DRAIN CURRENT (A)

ID = 20 A

Ciss

Coss

Crss

VGS = 18 V

Figure 12. Single Pulse Maximum Power

Dissipation

t, PULSE WIDTH (sec)

P(PK), PEAK TRANSIENT POWER (W)

VDD = 390 V

RJC = 0.85°C/W

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

CAPACITANCE (pF)

Single Pulse

RJC = 0.88°C/W

TC = 25°C

100 ms/DC

1 ms

VDD = 650 V

VDD = 520 V

f = 1 MHz

VGS = 0 V

TJ = 25°C

100 s

Single Pulse

RJC = 0.85°C/W

TC = 25°C

10 ms

10 s

−6

0 255075100

100

1000

10000

0.1 1 10 100

100

0.001 0.01 0.1 1

25 50 75 100 125 150 175

0.1

100

0.1 1 10 100 1000

300

100

1000

10000

0.00001 0.0001 0.001 0.01 0.1 1

20000

−3

RDS(on) Limit

Thermal Limit

Package Limit

NVH4L060N065SC1

www.onsemi.com

TYPICAL CHARACTERISTICS

Figure 13. Junction−to−Case Thermal Response

t, RECTANGULAR PULSE DURATION (sec)

ZJC(t). EFFECTIVE TRANSIENT

THERMAL RESISTANCE (°C/W)

0.5 Duty Cycle

Single Pulse

0.2

0.1

0.05

0.02

0.01

PDM

Notes:

RJC = 0.85°C/W

Peak TJ = PDM x ZJC(t) + TC

Duty Cycle, D = t1/t2

0.01

0.1

0.00001 0.0001 0.001 0.01 10.1

NVH4L060N065SC1

www.onsemi.com

PACKAGE DIMENSIONS

TO−247−4LD

CASE 340CJ

ISSUE A

NVH4L060N065SC1

www.onsemi.com

onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates

and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.

A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any

products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use

of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products

and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information

provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may

vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license

under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems

or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should

Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

TECHNICAL SUPPORT

North American Technical Support:

Voice Mail: 1 800−282−9855 Toll Free USA/Canada

Phone: 011 421 33 790 2910

LITERATURE FULFILLMENT:

Email Requests to: [email protected]

onsemi Website: www.onsemi.com

Europe, Middle East and Africa Technical Support:

Phone: 00421 33 790 2910

For additional information, please contact your local Sales Representative