Vishay IRF9630 Owner's manual

IRF9630
Vishay
Brand
Vishay
Model
IRF9630
Type
Owner's manual

The Vishay IRF9630 is a P-Channel power MOSFET designed to provide the best possible combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. It offers features such as dynamic dV/dt rating, availability in different package options, and ease of paralleling for increased power handling capabilities. It can be used in various applications, including power supplies, motor control circuits, and high-efficiency lighting systems, due to its fast switching speed and low on-resistance.

The Vishay IRF9630 is a P-Channel power MOSFET designed to provide the best possible combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. It offers features such as dynamic dV/dt rating, availability in different package options, and ease of paralleling for increased power handling capabilities. It can be used in various applications, including power supplies, motor control circuits, and high-efficiency lighting systems, due to its fast switching speed and low on-resistance.

IRF9630
www.vishay.com Vishay Siliconix
S21-0867-Rev. E, 16-Aug-2021 1Document Number: 91084
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
FEATURES
• Dynamic dV/dt rating
• Repetitive avalanche rated
•P-channel
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = -50 V, starting TJ = 25 °C, L = 17 mH, Rg = 25 Ω, IAS = -6.5 A (see fig. 12)
c. ISD ≤ -6.5 A, dI/dt ≤ 120 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
d. 1.6 mm from case
PRODUCT SUMMARY
VDS (V) -200
RDS(on) max. (Ω)V
GS = -10 V 0.80
Qg max. (nC) 29
Qgs (nC) 5.4
Qgd (nC) 15
Configuration Single
S
G
D
P-Channel MOSFET
TO-220AB
GD
S
Available
Available
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free IRF9630PbF
Lead (Pb)-free and halogen-free IRF9630PbF-BE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS -200 V
Gate-source voltage VGS ± 20
Continuous drain current VGS at 10 V TC = 25 °C ID
-6.5
ATC = 100 °C -4.0
Pulsed drain current a IDM -26
Linear derating factor 0.59 W/°C
Single pulse avalanche energy bEAS 500 mJ
Repetitive avalanche current a IAR -6.4 A
Repetitive avalanche energy aEAR 7.4 mJ
Maximum power dissipation TC = 25 °C PD74 W
Peak diode recovery dV/dt cdV/dt -5.0 V/ns
Operating junction and storage temperature range TJ, Tstg -55 to +150 °C
Soldering recommendations (peak temperature) dFor 10 s 300
Mounting torque 6-32 or M3 screw 10 lbf · in
1.1 N · m
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IRF9630
www.vishay.com Vishay Siliconix
S21-0867-Rev. E, 16-Aug-2021 2Document Number: 91084
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum junction-to-ambient RthJA -62
°C/WCase-to-sink, flat, greased surface RthCS 0.50 -
Maximum junction-to-case (drain) RthJC -1.7
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = -250 μA -200 - - V
VDS temperature coefficient ΔVDS/TJ Reference to 25 °C, ID = -1 mA - -0.24 - V/°C
Gate-source threshold voltage VGS(th) VDS = VGS, ID = -250 μA -2.0 - -4.0 V
Gate-source leakage IGSS V
GS = ± 20 V - - ± 100 nA
Zero gate voltage drain current IDSS
VDS = -200 V, VGS = 0 V - - -100 μA
VDS = -160 V, VGS = 0 V, TJ = 125 °C - - -500
Drain-source on-state resistance RDS(on) V
GS = -10 V ID = -3.9 A b - - 0.80 Ω
Forward transconductance gfs VDS = -50 V, ID = -3.9 A b 2.8 - - S
Dynamic
Input capacitance Ciss VGS = 0 V,
VDS = -25 V,
f = 1.0 MHz, see fig. 5
- 700 -
pFOutput capacitance Coss - 200 -
Reverse transfer capacitance Crss -40-
Total gate charge Qg
VGS = -10 V
ID = -6.5 A,
VDS = -160 V,
see fig. 6 and 13 b
--29
nC Gate-source charge Qgs --5.4
Gate-drain charge Qgd --15
Turn-on delay time td(on)
VDD = -100 V, ID = -6.5 A,
Rg = 12 Ω, RD = 15 Ω, see fig. 10 b
-12-
ns
Rise time tr -27-
Turn-off delay time td(off) -28-
Fall time tf -24-
Gate input resistance LD Between lead,
6 mm (0.25") from
package and center of
die contact
-4.5-
nH
Internal drain inductance LS-7.5-
Internal source inductance Rgf = 1 MHz, open drain 0.6 - 3.7 Ω
Drain-Source Body Diode Characteristics
Continuous source-drain diode current IS
MOSFET symbol
showing the
integral reverse
p -n junction diode
---6.5
A
Pulsed diode forward current aISM ---26
Body diode voltage VSD TJ = 25 °C, IS = -6.5 A, VGS = 0 V b---6.5V
Body diode reverse recovery time trr TJ = 25 °C, IF = -6.5 A, dI/dt = 100 A/μs b - 200 300 ns
Body diode reverse recovery charge Qrr -1.92.9μC
Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
D
S
G
S
D
G
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IRF9630
www.vishay.com Vishay Siliconix
S21-0867-Rev. E, 16-Aug-2021 3Document Number: 91084
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
91084_01
Bottom
To p
VGS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
20 µs Pulse Width
TC = 25 °C
- 4.5 V
- VDS, Drain-to-Source Voltage (V)
- ID, Drain Current (A)
100101
101
100
10-1
10-1
101
100
10-1
100101
- V
DS,
Drain-to-Source Voltage (V)
- I
D
, Drain Current (A)
Bottom
To p
VGS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
20 µs Pulse Width
TC = 150 °C
91084_02
- 4.5 V
10-1
20 µs Pulse Width
VDS = - 50 V
101
100
- ID, Drain Current (A)
- VGS, Gate-to-Source Voltage (V)
5678910
4
25 °C150 °C
91084_03
I
D
= - 6.5 A
V
GS
= - 10 V
3.0
0.0
0.5
1.0
1.5
2.0
2.5
TJ, Junction Temperature (°C)
RDS(on), Drain-to-Source On Resistance
(Normalized)
91084_04
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
1200
1000
800
600
0
200
400
100101
Capacitance (pF)
- V
DS,
Drain-to-Source Voltage (V)
Ciss
Crss
Coss
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
91084_05
Q
G
, Total Gate Charge (nC)
- V
GS
, Gate-to-Source Voltage (V)
20
16
12
8
0
4
0525
2015
10
V
DS
= - 40 V
V
DS
= - 100 V
For test circuit
see figure 13
V
DS
= - 160 V
91084_06
I
D
= - 6.5 A
30
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IRF9630
www.vishay.com Vishay Siliconix
S21-0867-Rev. E, 16-Aug-2021 4Document Number: 91084
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
101
100
- VSD, Source-to-Drain Voltage (V)
- ISD, Reverse Drain Current (A)
0.5 4.5
3.52.51.5
25 °C
150 °C
VGS
= 0 V
91084_07
10-1
10 µs
100 µs
1 ms
10 ms
Operation in this area limited
by RDS(on)
- VDS, Drain-to-Source Voltage (V)
- ID, Drain Current (A)
TC = 25 °C
TJ = 150 °C
Single Pulse
102
0.1
2
5
0.1
2
5
1
2
5
10
2
5
25
125
10 25
10225
103
91084_08
103
- I
D
, Drain Current (A)
T
C
, Case Temperature (°C)
0.0
1.0
2.0
3.0
4.0
5.0
91084_09
15025 1251007550
7.0
6.0
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
- 10 V
+
-
V
DS
V
DD
VGS
10 %
90 %
VDS
td(on) trtd(off) tf
10
1
0.1
10-2
10-5 10-4 10-3 10-2 0.1 1 10
PDM
t1
t2
t
1
, Rectangular Pulse Duration (s)
Thermal Response (Z
thJC
)
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
Single Pulse
(Thermal Response)
0.2
0.05
0.02
0.01
91084_11
0.1
D = 0.5
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IRF9630
www.vishay.com Vishay Siliconix
S21-0867-Rev. E, 16-Aug-2021 5Document Number: 91084
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 13a - Basic Gate Charge Waveform Fig. 13c - Gate Charge Test Circuit
A
R
G
I
AS
0.01 Ω
t
p
D.U.T
L
V
DS
+
-V
DD
- 10 V
Var y t
p
to obtain
required I
AS
1200
0
200
400
600
800
1000
Starting TJ, Junction Temperature (°C)
EAS, Single Pulse Energy (mJ)
Bottom
To p
ID
- 2.9 A
- 4.1 A
- 6.5 A
VDD = - 50 V
91084_12c
25 150
125
10075
50
QGS QGD
QG
VG
Charge
- 10 V
D.U.T.
- 3 mA
VGS
VDS
IGID
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
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IRF9630
www.vishay.com Vishay Siliconix
S21-0867-Rev. E, 16-Aug-2021 6Document Number: 91084
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 14 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91084.
P.W. Period
dI/dt
Diode recovery
dV/dt
Body diode forward drop
Body diode forward
current
Driver gate drive
Inductor current
D = P.W.
Period
+
-
-
-
-
+
+
+
Peak Diode Recovery dV/dt Test Circuit
• dV/dt controlled by Rg
• D.U.T. - device under test
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
Rg
• Compliment N-Channel of D.U.T. for driver
VDD
• ISD controlled by duty factor “D”
Note
Note
a. VGS = - 5 V for logic level and - 3 V drive devices
VGS = - 10 Va
D.U.T. lSD waveform
D.U.T. VDS waveform
VDD
Re-applied
voltage
Ripple ≤ 5 % ISD
Reverse
recovery
current
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Package Information
www.vishay.com Vishay Siliconix
Revison: 04-Nov-2021 1Document Number: 66542
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TO-220-1
Note
• M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM
DIM. MILLIMETERS INCHES
MIN. MAX. MIN. MAX.
A 4.24 4.65 0.167 0.183
b 0.69 1.02 0.027 0.040
b(1) 1.14 1.78 0.045 0.070
c 0.36 0.61 0.014 0.024
D 14.33 15.85 0.564 0.624
E 9.96 10.52 0.392 0.414
e 2.41 2.67 0.095 0.105
e(1) 4.88 5.28 0.192 0.208
F 1.14 1.40 0.045 0.055
H(1) 6.10 6.71 0.240 0.264
J(1) 2.41 2.92 0.095 0.115
L 13.36 14.40 0.526 0.567
L(1) 3.33 4.04 0.131 0.159
Ø P 3.53 3.94 0.139 0.155
Q 2.54 3.00 0.100 0.118
ECN: E21-0621-Rev. D, 04-Nov-2021
DWG: 6031
M
*
3
2
1
L
L(1)
D
H(1)
Q
Ø P
A
F
J(1)
b(1)
e(1)
e
E
b
C
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Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 01-Jan-2022 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
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Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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Vishay IRF9630 Owner's manual

IRF9630
Vishay
Brand
Vishay
Model
IRF9630
Type
Owner's manual

The Vishay IRF9630 is a P-Channel power MOSFET designed to provide the best possible combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. It offers features such as dynamic dV/dt rating, availability in different package options, and ease of paralleling for increased power handling capabilities. It can be used in various applications, including power supplies, motor control circuits, and high-efficiency lighting systems, due to its fast switching speed and low on-resistance.

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