Renesas 2SK3069 User manual

Type
User manual
Rev.11.00 Sep 07, 2005 page 1 of 7
2SK3069
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1062-1100
(Previous: ADE-208-694I)
Rev.11.00
Sep 07, 2005
Features
Low on-resistance
R
DS(on)
= 6 m typ.
Low drive current
4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
1. Gate
2. Drain
(Flange
)
3. Source
1
2
3
D
G
S
2SK3069
Rev.11.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
60 V
Gate to source voltage V
GSS
±20 V
Drain current I
D
75 A
Drain peak current I
D(pulse)
Note 1
300 A
Body-drain diode reverse drain current I
DR
75 A
Avalanche current I
AP
Note 3
50 A
Avalanche energy E
AR
Note 3
214 mJ
Channel dissipation Pch
Note 2
100 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW 10µs, duty cycle 1 %
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg 50
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
(BR)DSS
60 V I
D
= 10 mA, V
GS
= 0
Gate to source leak current I
GSS
±0.1 µA V
GS
= ±20 V, V
DS
= 0
Zero gate voltage drain current I
DSS
10 µA V
DS
= 60 V, V
GS
= 0
Gate to source cutoff voltage V
GS(off)
1.0 — 2.5 V I
D
= 1 mA, V
DS
= 10 V
Note 4
— 6.0 7.5 m I
D
= 40 A, V
GS
= 10 V
Note 4
Static drain to source on state
resistance
R
DS(on)
— 8.0 12 m I
D
= 40 A, V
GS
= 4 V
Note 4
Forward transfer admittance |y
fs
| 50 80 S I
D
= 40 A, V
DS
= 10 V
Note 4
Input capacitance Ciss 7100 pF
Output capacitance Coss 1000 pF
Reverse transfer capacitance Crss 280 pF
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
Total gate charge Qg 125 nC
Gate to source charge Qgs 25 nC
Gate to drain charge Qgd 25 nC
V
DD
= 25 V, V
GS
= 10 V,
I
D
= 75 A
Turn-on delay time t
d(on)
— 60 — ns
Rise time t
r
300 ns
Turn-off delay time t
d(off)
520 ns
Fall time t
f
330 ns
V
GS
= 10 V, I
D
= 40 A,
R
L
= 0.75
Body–drain diode forward voltage V
DF
1.05 V I
F
= 75A, V
GS
= 0
Body–drain diode reverse recovery
time
t
rr
— 90 — ns
I
F
= 75A, V
GS
= 0
di
F
/ dt = 50 A/ µs
Note: 4. Pulse test
2SK3069
Rev.11.00 Sep 07, 2005 page 3 of 7
Main Characteristics
Power vs. Temperature Derating
Channel Dissipation Pch (W)
Case Temperature T
C
(°C)
Maximum Safe Operation Area
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Typical Output Characteristics
Drain Current I
D
(A)
Drain to Source Voltage V
DS
(V)
Typical Transfer Characteristics
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(V)
Drain Current I
D
(A)
Static Drain to Source on State
Resistance vs. Drain Current
Static Drain to Source on State Resistance
R
DS (on)
(m)
200
150
100
0
50 100 150 200
0.1 0.3 1
3
10
30
100
100
80
60
40
20
0
246810
1000
300
100
30
10
1
0.3
0.1
3
Ta = 25°C
10 µs
100 µs
1 ms
DC Operation
(Tc = 25°C)
Operation in
this area is
limited by R
DS(on)
PW = 10 ms (1 shot)
3.5 V
3 V
50
V
GS
= 10 V
5 V
4 V
2.5 V
100
80
60
40
20
0
12345
Tc = –25°C
25°C
75°C
V
DS
= 10 V
Pulse Test
Pulse Test
0
48
12
16 20
2.0
1.6
1.2
0.8
0.4
Pulse Test
I
D
= 50 A
20 A
10 A
1
20 100
2
100
2
5
1
10
200
20
10
V
GS
= 4 V
10 V
Pulse Test
50
505
2SK3069
Rev.11.00 Sep 07, 2005 page 4 of 7
Case Temperature T
C
(°C)
Static Drain to Source on State
Resistance vs. Temperature
Static Drain to Source on State Resistance
R
DS (on)
(m)
Forward Transfer Admittance
vs. Drain Current
Drain Current I
D
(A)
Forward Transfer Admittance y
fs
(S)
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current I
DR
(A)
Reverse Recovery Time t
rr
(ns)
Typical Capacitance
vs. Drain to Source Voltage
Drain to Source Voltage V
DS
(V)
Capacitance C (pF)
Dynamic Input Characteristics
Gate Charge Qg (nc)
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Switching Characteristics
Switching Time t (ns)
Drain Current I
D
(A)
20
16
12
8
4
–50 0 50 100 150 200
0
V
GS
= 10 V
4 V
Pulse Test
10, 20, 50 A
I
D
= 50 A
10 A
20 A
0.1 0.3 1 3 10 30 100
500
100
200
20
50
10
2
5
1
0.5
Tc = –25°C
75°C
25°C
V
DS
= 10 V
Pulse Test
0.1 0.3 1 3 10 30 100
01020304050
1000
10000
3000
100
80
60
40
20
0
20
16
12
8
4
80 160 240 320 400
0
1000
100
200
20
10
0.1 0.2
2
10 100
1000
500
100
200
20
50
10
di / dt = 50 A / µs
V
GS
= 0, Ta = 25°C
300
20
1
100
V
GS
= 0
f = 1 MHz
Ciss
Coss
Crss
I
D
= 75 A
V
GS
V
DS
V
DD
= 50 V
25 V
10 V
V
DD
= 50 V
25 V
10 V
0.5
5
500
50
50
V
GS
= 10 V, V
DD
= 30 V
PW = 5 µs, duty < 1 %
t
r
t
d(on)
t
d(off)
t
f
30000
2SK3069
Rev.11.00 Sep 07, 2005 page 5 of 7
Pulse Width PW (S)
Normalized Transient Thermal Impedance γ
s
(t)
Normalized Transient Thermal Impedance vs. Pulse Width
Channel Temperature Tch (°C)
Repetitive Avalanche Energy E
AR
(mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Source to Drain Voltage V
SD
(V)
Reverse Drain Current I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
D. U. T
Rg
I
AP
Monitor
V
DS
Monitor
V
DD
50
Vin
15 V
0
I
D
V
DS
I
AP
V
(BR)DSS
L
V
DD
E
AR
= L I
AP
2
2
1
V
DSS
V
DSS
– V
DD
Avalanche Test Circuit Avalanche Waveform
0
0.4 0.8 1.2 1.6 2.0
Pulse Test
V
GS
= 0, –5 V
5 V
10 V
100
80
60
40
20
250
200
150
100
50
25 50 75 100 125 150
0
I
AP
= 50 A
V
DD
= 25 V
duty < 0.1 %
Rg > 50
3
1
0.3
0.1
0.03
0.01
10 µ
100 µ 1 m 10 m
100 m 1 10
DM
P
PW
T
D =
PW
T
ch – c(t) = s (t) ch – c
ch – c = 1.25°C/W, Tc = 25°C
θ γ θ
θ
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
2SK3069
Rev.11.00 Sep 07, 2005 page 6 of 7
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
DD
= 30 V
t
r
t
d(on)
Vin
90%
90%
10%
10%
Vout
t
d(off)
Vout
Monitor
50
90%
10%
t
f
Switching Time Test Circuit Switching Time Waveforms
2SK3069
Rev.11.00 Sep 07, 2005 page 7 of 7
Package Dimensions
0.5 ± 0.1
2.54 ± 0.5
0.76 ± 0.1
14.0 ± 0.5 15.0 ± 0.3
2.79 ± 0.218.5 ± 0.57.8 ± 0.5
10.16 ± 0.2
2.54 ± 0.5
1.26 ± 0.15
4.44 ± 0.2
2.7 Max
1.5 Max
11.5 Max
9.5
8.0
1.27
6.4
+0.2
–0.1
φ 3.6
+0.1
–0.08
Package Name
PRSS0004AC-A TO-220AB / TO-220ABV
MASS[Typ.]
1.8gSC-46
RENESAS CodeJEITA Package Code
Unit: mm
Ordering Information
Part Name Quantity Shipping Container
2SK3069-E 500 pcs Box (Sack)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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Renesas 2SK3069 User manual

Type
User manual

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