Panasonic Network Card 2SA1018 User manual

Panasonic
Brand
Panasonic
Model
Network Card 2SA1018
Type
User manual

This manual is also suitable for

Panasonic Network Card 2SA1018 is a silicon PNP epitaxial planar transistor designed for general amplification and is complementary to 2SC1473. It features high collector-emitter voltage, high forward current transfer ratio, low collector-emitter saturation voltage, and high transition frequency. The device is suitable for use in a wide range of applications, including audio amplifiers, power supplies, and switching circuits.

The 2SA1018 is packaged in a TO-92-B1 package and has a maximum collector-emitter voltage of -200V, a maximum collector current of -70mA, and a maximum collector power dissipation of 750mW. It has a typical forward current transfer ratio of 220 and a typical collector-emitter saturation voltage of -0.45V. The device has a transition frequency of 50MHz and a collector output capacitance of 10pF.

Panasonic Network Card 2SA1018 is a silicon PNP epitaxial planar transistor designed for general amplification and is complementary to 2SC1473. It features high collector-emitter voltage, high forward current transfer ratio, low collector-emitter saturation voltage, and high transition frequency. The device is suitable for use in a wide range of applications, including audio amplifiers, power supplies, and switching circuits.

The 2SA1018 is packaged in a TO-92-B1 package and has a maximum collector-emitter voltage of -200V, a maximum collector current of -70mA, and a maximum collector power dissipation of 750mW. It has a typical forward current transfer ratio of 220 and a typical collector-emitter saturation voltage of -0.45V. The device has a transition frequency of 50MHz and a collector output capacitance of 10pF.

Transistors
1
Publication date: January 2003 SJC00008BED
2SA1018
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC1473
■ Features
• High collector-emitter voltage (Base open) V
CEO
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−250 V
Collector-emitter voltage (Base open) V
CEO
−200 V
Emitter-base voltage (Collector open) V
EBO
−5V
Collector current I
C
−70 mA
Peak collector current I
CP
−100 mA
Collector power dissipation P
C
750 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
CEO
I
C
= −100 µA, I
B
= 0 −200 V
Emitter-base voltage (Collector open) V
EBO
I
E
= −1 µA, I
C
= 0 −5V
Collector-emitter cut-off current (Base open)
I
CEO
V
CE
= −120 V, I
B
= 0 −1 µA
Forward current transfer ratio
*
h
FE
V
CE
= −10 V, I
C
= −5 mA 60 220
Collector-emitter saturation voltage V
CE(sat)
I
C
= −50 mA, I
B
= −5 mA −1.5 V
Transition frequency f
T
V
CB
= −10 V, I
E
= 10 mA, f = 200 MHz 50 MHz
Collector output capacitance C
ob
V
CB
= −10 V, I
E
=0, f = 1 MHz 10 pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
5.0
±0.2
0.7
±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
123
+0.6
–0.2
4.0
±0.2
5.1
±0.2
12.9
±0.5
2.3
±0.2
0.7
±0.2
1 : Emitter
2 : Collector
3 : Base
TO-92-B1 Package
Rank Q R
h
FE
60 to 150 100 to 220
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA1018
2
SJC00008BED
V
CE(sat)
I
C
h
FE
I
C
f
T
I
E
P
C
T
a
I
C
V
CE
I
C
V
BE
C
ob
V
CB
I
CEO
T
a
0 16040 12080 14020 10060
0
1 000
800
600
400
200
Collector power dissipation P
C
(
mW
)
Ambient temperature T
a
(
°C
)
0 −12−10−8−2 −6−4
0
−100
−80
−60
−40
−20
T
a
= 25°C
− 0.2 mA
− 0.1 mA
− 0.3 mA
− 0.4 mA
− 0.5 mA
− 0.6 mA
− 0.7 mA
− 0.8 mA
− 0.9 mA
I
B
= −1.0 mA
Collector current I
C
(
mA
)
Collector-emitter voltage V
CE
(
V
)
0 −2.0−1.6− 0.4 −1.2− 0.8
0
−120
−100
−80
−60
−40
−20
V
CE
= −10 V
T
a
= 75°C
−25°C
25°C
Base-emitter voltage V
BE
(
V
)
Collector current I
C
(
mA
)
− 0.1 −1 −10 −100
− 0.01
− 0.1
−1
−10
−100
I
C
/ I
B
= 10
T
a
= 75°C
25°C
−25°C
Collector-emitter saturation voltage V
CE(sat)
(
V
)
Collector current I
C
(
mA
)
− 0.1 −1 −10 −100
0
300
250
200
150
100
50
V
CE
= −10 V
T
a
= 75°C
25°C
−25°C
Forward current transfer ratio h
FE
Collector current I
C
(
mA
)
0.1 1 10 100
0
120
100
80
60
40
20
V
CB
= −10 V
T
a
= 25°C
Transition frequency f
T
(
MHz
)
Emitter current I
E
(
mA
)
−1 −10 −100
0
20
16
12
8
4
I
E
= 0
f = 1 MHz
T
a
= 25°C
Collector-base voltage V
CB
(
V
)
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
0 24020016040 12080
1
10
100
1 000
10 000
V
CE
= −120 V
Ambient temperature T
a
(
°C
)
I
CEO
(
T
a
)
I
CEO
(
T
a
= 25°C
)
This product complies with the RoHS Directive (EU 2002/95/EC).
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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Panasonic Network Card 2SA1018 User manual

Panasonic
Brand
Panasonic
Model
Network Card 2SA1018
Type
User manual
This manual is also suitable for

Panasonic Network Card 2SA1018 is a silicon PNP epitaxial planar transistor designed for general amplification and is complementary to 2SC1473. It features high collector-emitter voltage, high forward current transfer ratio, low collector-emitter saturation voltage, and high transition frequency. The device is suitable for use in a wide range of applications, including audio amplifiers, power supplies, and switching circuits.

The 2SA1018 is packaged in a TO-92-B1 package and has a maximum collector-emitter voltage of -200V, a maximum collector current of -70mA, and a maximum collector power dissipation of 750mW. It has a typical forward current transfer ratio of 220 and a typical collector-emitter saturation voltage of -0.45V. The device has a transition frequency of 50MHz and a collector output capacitance of 10pF.

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