Infineon IRFI4229PbF is a HEXFET® Power MOSFET designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. It features low EPULSE rating for reduced power dissipation, low QG for fast response, high repetitive peak current capability for reliable operation, and a 150°C operating junction temperature for improved ruggedness. With its advanced process technology and optimized key parameters, this MOSFET is ideal for PDP driving applications, offering high efficiency, robustness, and reliability.
Infineon IRFI4229PbF is a HEXFET® Power MOSFET designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. It features low EPULSE rating for reduced power dissipation, low QG for fast response, high repetitive peak current capability for reliable operation, and a 150°C operating junction temperature for improved ruggedness. With its advanced process technology and optimized key parameters, this MOSFET is ideal for PDP driving applications, offering high efficiency, robustness, and reliability.
IRFI4229PbF
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in
Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon
area and low EPULSE rating. Additional features of this MOSFET are 150°C operating junction temperature and high
repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable
device for PDP driving applications
1 2017-04-27
Absolute Maximum Ratings
Symbol Parameter Max. Units
VGS Gate-to-Source Voltage ± 30 V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 19
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12
IDM Pulsed Drain Current 72
IRP @ TC = 100°C Repetitive Peak Current 32
PD @TC = 25°C Maximum Power Dissipation 46 W
PD @TC = 100°C Maximum Power Dissipation 18
Linear Derating Factor 0.37 W/°C
TJ Operating Junction and
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
-40 to + 150
G D S
Gate Drain Source
Features
Advanced Process Technology
Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
Low QG for Fast Response
High Repetitive Peak Current Capability for
Reliable Operation
Short Fall & Rise Times for Fast Switching
150°C Operating Junction Temperature for
Improved Ruggedness
Repetitive Avalanche Capability for Robustness and
Reliability
HEXFET® Power MOSFET
TO-220 Full-Pak
Base Part Number Package Type Standard Pack Orderable Part Number
Form Quantity
IRFI4229PbF TO-220 Full-Pak Tube 50 IRFI4229PbF
Thermal Resistance
Symbol Parameter Typ. Max. Units
RJC Junction-to-Case ––– 2.73
RJA Junction-to-Ambient ––– 65 °C/W
G
D
S
Key Parameters
VDS max 250 V
VDS (Avalanche) typ. 300 V
RDS(ON) typ. @ 10V 38 m
IRP max @ TC= 100°C 32 A
TJ max 150 °C
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Notes:
Repetitive rating; pulse width limited by max. junction temperature.
starting TJ = 25°C, L = 1.9mH, RG = 25, IAS = 11A.
Pulse width 400µs; duty cycle 2%.
R
θ is measured at TJ of approximately 90°C.
Half sine wave with duty cycle = 0.25, ton=1μsec.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 250 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 340 ––– mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 38 46 m VGS = 10V, ID = 11A
VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA
VGS(th)/TJ Gate Threshold Voltage Temp. Coefficient ––– -12 ––– mV/°C
IDSS Drain-to-Source Leakage Current ––– ––– 20 VDS = 250V, VGS = 0V
––– ––– 200 VDS = 250V,VGS = 0V,TJ =150°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
gfs Forward Trans conductance 26 ––– ––– S VDS = 25V, ID = 11A
Qg Total Gate Charge ––– 73 110 nC ID = 11A,VDS = 125V
Qgd Gate-to-Drain Charge ––– 24 ––– VGS = 10V
td(on) Turn-On Delay Time ––– 18 –––
ns
VDD = 125V, VGS = 10V
tr Rise Time ––– 17 ––– ID = 11A
td(off) Turn-Off Delay Time ––– 32 ––– RG= 2.4
tf Fall Time ––– 13 ––– See Fig. 22
tst Shoot Through Blocking Time 100 ––– ––– ns VDD = 200V,VGS = 15V,RG= 5.1
EPULSE Energy per Pulse
––– 770 –––
µJ
L = 220nH, C = 0.3µF, VGS = 15V
VDD = 200V, RG= 5.1TJ = 25°C
––– 1380 ––– L = 220nH, C = 0.3µF, VGS = 15V
VDD = 200V, RG= 5.1TJ = 100°C
Ciss Input Capacitance ––– 4480 –––
pF
VGS = 0V
Coss Output Capacitance ––– 400 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 100 ––– ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 270 ––– VGS = 0V, VDS = 0V to 200V
LD Internal Drain Inductance ––– 4.5 –––
nH
Between lead,
6mm (0.25in.)
LS Internal Source Inductance ––– 7.5 ––– from package
and center of die contact
µA
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS @ TC = 25°C Continuous Source Current ––– ––– 18
A
MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– 72 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 11A,VGS = 0V
trr Reverse Recovery Time ––– 120 180 ns TJ = 25°C ,IF = 11A, VDD = 50V
Qrr Reverse Recovery Charge ––– 540 810 nC di/dt = 100A/µs
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy ––– 110
EAR Repetitive Avalanche Energy ––– 4.6
VDS(Avalanche) Repetitive Avalanche Voltage 300 ––– V
IAS Avalanche Current ––– 11 A
mJ
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Fig. 2. Typical Output Characteristics
Fig. 3. Typical Transfer Characteristics
Fig. 1. Typical Output Characteristics
Fig 6. Typical EPULSE vs. Drain Current
Fig 5. Typical EPULSE vs. Drain-to-Source Voltage
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
BOTTOM 5.0V
60µs PULSE WIDTH
Tj = 25°C
5.0V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
5.0V
60µs PULSE WIDTH
Tj = 150°C
VGS
TOP 15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
BOTTOM 5.0V
3 4 5 6 7
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
TJ = 25°C
TJ = 150°C
VDS = 25V
60µs PULSE WIDTH
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 11A
VGS = 10V
140 150 160 170 180 190 200 210
VDS, Drain-to-Source Voltage (V)
200
400
600
800
1000
1200
1400
Energy per Pulse (µJ)
L = 220nH
C = 0.3µF
100°C
25°C
100 110 120 130 140 150 160 170
ID, Peak Drain Current (A)
0
200
400
600
800
1000
1200
1400
Energy per Pulse (µJ)
L = 220nH
C = variable
100°C
25°C
Fig. 4. Normalized On-Resistance vs. Temperature
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Fig 12. Maximum Safe Operating Area
Fig. 7. Typical EPULSE vs. Temperature
Fig 11. Maximum Drain Current vs. Case Temperature
20 40 60 80 100 120 140 160
Temperature (°C)
0
200
400
600
800
1000
1200
1400
1600
1800
Energy per Pulse (µJ)
L = 220nH
C = 0.3µF
C = 0.2µF
C = 0.1µF
0.20.40.60.81.0
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 150°C
VGS = 0V
110 100 1000
VDS, Drain-to-Source Voltage (V)
0
1000
2000
3000
4000
5000
6000
7000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0 1020304050607080
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
VGS, Gate-to-Source Voltage (V)
VDS= 200V
VDS= 125V
VDS= 50V
ID= 11A
Fig 8. Typical Source-Drain Diode Forward Voltage
25 50 75 100 125 150
TC , Case Temperature (°C)
0
2
4
6
8
10
12
14
16
18
20
ID, Drain Current (A)
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage
1 10 100 1000
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
Tc = 25°C
Tj = 150°C
Single Pulse
100µsec
1msec
10msec
Fig 10. Typical Gate Charge vs. Gate-to-Source Voltage
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Fig. 14. Maximum Avalanche Energy Vs. Temperature
Fig. 15. Threshold Voltage vs. Temperature
5678910
VGS, Gate -to -Source Voltage (V)
0
20
40
60
80
100
120
140
160
180
200
RDS(on), Drain-to -Source On Resistance (m)
ID = 11A
TJ = 25°C
TJ = 125°C
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
0
50
100
150
200
250
300
350
400
450
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 2.3A
2.7A
BOTTOM 11A
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
2.0
3.0
4.0
5.0
VGS(th), Gate Threshold Voltage (V)
ID = 250µA
Fig. 13. On-Resistance Vs. Gate Voltage
25 50 75 100 125 150
Case Temperature (°C)
0
10
20
30
40
50
60
Repetitive Peak Current (A)
ton= 1µs
Duty cycle = 0.25
Half Sine Wave
Square Pulse
1E-006 1E-005 0.0001 0.001 0.01 0.1 110 100
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
C
C
Ci= iRi
Ci= iRi
Ri (°C/W) i (sec)
1.0580 0.162897
1.3076 2.426
0.3671 0.000287
Fig. 16. Typical Repetitive peak Current vs.
Case temperature
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Fig 19a. Unclamped Inductive Test Circuit Fig 19b. Unclamped Inductive Waveforms
Fig 20a. Gate Charge Test Circuit Fig 20b. Gate Charge Waveform
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET® Power MOSFETs
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Fig 21a. tst and EPULSE Test Circuit Fig 21b. tst Test Waveforms
Fig 22a. Switching Time Test Circuit Fig 22b. Switching Time Waveforms
Fig 21c. EPULSE Test Waveforms
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TO-220 Full-Pak Package Outline (Dimensions are shown in millimeters (inches))
TO-220 Full-Pak Part Marking Information
TO-220AB Full-Pak packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to website at http://www.irf.com/package/
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IRFI4229PbF
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Qualification Information
Qualification Level Industrial
(per JEDEC JESD47F) †
TO-220 Full-Pak N/A
RoHS Compliant Yes
Moisture Sensitivity Level
† Applicable version of JEDEC standard at the time of product release.
Trademarks of Infineon Technologies AG
µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™,
CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™,
GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™,
OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID
FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™
Trademarks updated November 2015
Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2016-04-19
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2016 Infineon Technologies AG.
All Rights Reserved.
Do you have a question about this
document?
Email: [email protected]
Document reference
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IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this
document is subject to customer’s compliance
with its obligations stated in this document and
any applicable legal requirements, norms and
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any use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained sta. It is the
responsibility of customer’s technical
departments to evaluate the suitability of the
product for the intended application and the
completeness of the product information given in
this document with respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies oice
(www.infineon.com).
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
of the Automotive Electronics Council.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies oice.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
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Technologies, Infineon Technologies’ products
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Revision History
Date Comments
04/27/2017
Changed datasheet with Infineon logo - all pages.
Corrected Package Outline on page 8.
Added disclaimer on last page.
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Infineon IRFI4229PbF is a HEXFET® Power MOSFET designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. It features low EPULSE rating for reduced power dissipation, low QG for fast response, high repetitive peak current capability for reliable operation, and a 150°C operating junction temperature for improved ruggedness. With its advanced process technology and optimized key parameters, this MOSFET is ideal for PDP driving applications, offering high efficiency, robustness, and reliability.
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