Vishay SI4946BEY-T1-E3 Owner's manual

Brand: Vishay

Model: SI4946BEY-T1-E3

Type: Owner's manual

The Vishay SI4946BEY-T1-E3 is a dual N-channel 60-V (D-S) 175 °C MOSFET that combines excellent high-side and low-side switching performance with the additional benefits of being halogen-free and RoHS compliant, making it suitable for a wide range of applications. It features a low on-resistance, fast switching speed, and high power density, making it ideal for use in high-efficiency power conversion circuits, motor control, and load switching applications, especially those that demand high current and voltage handling capabilities.

Vishay Siliconix

Si4946BEY

Document Number: 73411

S09-2434-Rev. C, 16-Nov-09

www.vishay.com

Dual N-Channel 60-V (D-S) 175 °C MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET® Power MOSFET

• 175 °C Maximum Junction Temperature

• 100 % Rg Tested

• Compliant to RoHS directive 2002/95/EC

PRODUCT SUMMARY

VDS (V) RDS(on) (Ω)I

D (A) Qg (Typ.)

60 0.041 at VGS = 10 V 6.5 9.2 nC

0.052 at VGS = 4.5 V 5.8

S1D1

G1D1

S2D2

G2D2

SO-8

Top View

Ordering Information: Si4946BEY-T1-E3 (Lead (Pb)-free)

Si4946BEY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET

N-Channel MOSFET

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

d. Maximum under Steady State conditions is 110 °C/W.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage VDS 60 V

Gate-Source Voltage VGS ± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

6.5

TC = 70 °C 5.5

TA = 25 °C 5.3a, b

TA = 70 °C 4.4a, b

Pulsed Drain Current IDM 30

Continuous Source Drain Diode Current

TC = 25 °C IS

3.1

TA = 25 °C 2a, b

Avalanche Current L = 0 1 mH IAS 12

Single-Pulse Avalanche Energy EAS 7.2 mJ

Maximum Power Dissipation

TC = 25 °C

3.7

TC = 70 °C 2.6

TA = 25 °C 2.4a, b

TA = 70 °C 1.7a, b

Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambienta, c t ≤ 10 s RthJA 50 62.5 °C/W

Maximum Junction-to-Foot (Drain) Steady State RthJF 33 41

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Document Number: 73411

S09-2434-Rev. C, 16-Nov-09

Vishay Siliconix

Si4946BEY

Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 60 V

VDS Temperature Coefficient ΔVDS/TJ ID = 250 µA 53 mV/°C

VGS(th) Temperature Coefficient ΔVGS(th)/TJ - 6.7

Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.0 2.4 3.0 V

Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA

Zero Gate Voltage Drain Current IDSS

VDS = 60 V, VGS = 0 V 1µA

VDS = 60 V, VGS = 0 V, TJ = 55 °C 10

On-State Drain CurrentaID(on) V

DS ≥ 5 V, VGS = 10 V 30 A

Drain-Source On-State ResistanceaRDS(on)

VGS = 10 V, ID = 5.3 A 0.033 0.041 Ω

VGS = 4.5 V, ID = 4.7 A 0.041 0.052

Forward Transconductanceagfs VDS = 15 V, ID = 5.3 A 24 S

Dynamicb

Input Capacitance Ciss

VDS = 30 V, VGS = 0 V, f = 1 MHz

840

pFOutput Capacitance Coss 71

Reverse Transfer Capacitance Crss 44

Total Gate Charge Qg

VDS = 30 V, VGS = 10 V, ID = 5.3 A 17 25

VDS = 30 V, VGS = 5 V, ID = 5.3 A

9.2 12

Gate-Source Charge Qgs 3.3

Gate-Drain Charge Qgd 3.7

Gate Resistance Rgf = 1 MHz 3.1 6.5 9.5 Ω

Tur n - O n D e l ay Time td(on)

VDD = 30 V, RL = 6.8 Ω

ID ≅ 4.4 A, VGEN = 4.5 V, Rg = 1 Ω

20 30

Rise Time tr120 180

Turn-Off Delay Time td(off) 20 30

Fall Time tf30 45

Tur n - O n D e l ay Time td(on)

VDD = 30 V, RL = 6.8 Ω

ID ≅ 4.4 A, VGEN = 10 V, Rg = 1 Ω

10 15

Rise Time tr12 20

Turn-Off Delay Time td(off) 25 40

Fall Time tf10 15

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current ISTC = 25 °C 3.1 A

Pulse Diode Forward CurrentaISM 30

Body Diode Voltage VSD IS = 2 A 0.8 1.2 V

Body Diode Reverse Recovery Time trr

IF = 4.4 A, dI/dt = 100 A/µs, TJ = 25 °C

25 50 ns

Body Diode Reverse Recovery Charge Qrr 25 50 nC

Reverse Recovery Fall Time ta18 ns

Reverse Recovery Rise Time tb7

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Document Number: 73411

S09-2434-Rev. C, 16-Nov-09

www.vishay.com

Vishay Siliconix

Si4946BEY

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0.0 0.5 1.0 1.5 2.0 2.5 3.0

= 10 V thru 5 V

4 V

- Drain-to-Source Voltage (V)

- Drain Current (A)I

3 V

0.000

0.020

0.040

0.060

0.080

0.100

0 5 10 15 20 25 30

VGS = 10 V

- Drain Current (A)

VGS = 4.5 V

RDS(on) - On-Resistance (mΩ)

0 4 8 12 16 20

ID = 5.3 A

- Gate-to-Source Voltage (V)

Qg - Total Gate Charge (nC)

VGS

VDS = 48 V

VDS = 30 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

25 °C

TC = 150 °C

- 55 °C

VGS

- Gate-to-Source Voltage (V)

- Drain Current (A)ID

200

400

600

800

1000

1200

0 102030405060

Crss

Coss

Ciss

VDS - Drain-to-Source Voltage (V)

C - Capacitance (pF)

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

- 50 - 25 0 25 50 75 100 125 150 175

VGS = 10 V

TJ - Junction Temperature (°C)

RDS(on) - On-Resistance

(Normalized)

VGS = 4.5 V

ID = 5.3 A

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Document Number: 73411

S09-2434-Rev. C, 16-Nov-09

Vishay Siliconix

Si4946BEY

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

1.0 1.4

0 0.2 0.4 0.6 0.8

TJ = 175 °C

VSD

- Source-to-Drain Voltage (V)

- Source Current (A)IS

1.2

TJ = 25 °C

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

- 50 - 25 0 25 50 75 100 125 150 175

ID = 250 µA

TJ - Temperature (°C)

VGS(th) (V)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.00

0.02

0.04

0.06

0.08

0.10

0246810

ID = 5.3 A

VGS - Gate-to-Source Voltage (V)

RDS(on) - Drain-to-Source On-Resistance (Ω)

TJ = 25 °C

TJ = 150 °C

Power (W)

Time (s)

10 100010.10.01 100

Safe Operating Area, Junction-to-Ambient

100

0.01 1 10 100

0.01

- Drain Current (A)ID

0.1

1 ms

10 ms

100 ms

Limited by RDS(on)*

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

TA = 25 °C

Single Pulse

100 µs

10 s

1 s

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Document Number: 73411

S09-2434-Rev. C, 16-Nov-09

www.vishay.com

Vishay Siliconix

Si4946BEY

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

* The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0 25 50 75 100 125 150 175

- Drain Current (A)

TC - Case Temperature (°C)

Power, Junction-to-Case

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

25 50 75 100 125 150 175

TC - Case Temperature (°C)

Power (W)

Single Pulse Avalanche Capability

100

0.000001 0.001

0.0001

TA - Time In Avalanche (s)

IC - Peak Avalanche Current (A)

=L· I

BV - V

0.00001

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Document Number: 73411

S09-2434-Rev. C, 16-Nov-09

Vishay Siliconix

Si4946BEY

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?73411.

Normalized Thermal Transient Impedance, Junction-to-Ambient

10-3 10-2 1 10 60010-1

10-4 100

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Square Wave Pulse Duration (s)

Normalized Effective Transient

Thermal Impedance

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 85 °C/W

3. T JM - TA = PDMZthJA(t)

Notes:

4. Surface Mounted

PDM

Normalized Thermal Transient Impedance, Junction-to-Case

10-3 10-2 110-1

10-4

0.1

0.01

0.2

0.1

Duty Cycle = 0.5

Square Wave Pulse Duration (s)

Normalized Effective Transient

Thermal Impedance

0.02

0.05 Single Pulse

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Vishay Siliconix

Package Information

Document Number: 71192

11-Sep-06

www.vishay.com

DIM

MILLIMETERS INCHES

Min Max Min Max

A 1.35 1.75 0.053 0.069

A10.10 0.20 0.004 0.008

B 0.35 0.51 0.014 0.020

C 0.19 0.25 0.0075 0.010

D 4.80 5.00 0.189 0.196

E 3.80 4.00 0.150 0.157

e 1.27 BSC 0.050 BSC

H 5.80 6.20 0.228 0.244

h 0.25 0.50 0.010 0.020

L 0.50 0.93 0.020 0.037

q0°8°0°8°

S 0.44 0.64 0.018 0.026

ECN: C-06527-Rev. I, 11-Sep-06

DWG: 5498

h x 45

All Leads

q0.101 mm

0.004"

0.25 mm (Gage Plane)

SOIC (NARROW): 8-LEAD

JEDEC Part Number: MS-012

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Application Note 826

Vishay Siliconix

www.vishay.com Document Number: 72606

22 Revision: 21-Jan-08

APPLICATION NOTE

RECOMMENDED MINIMUM PADS FOR SO-8

0.246

(6.248)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.172

(4.369)

0.152

(3.861)

0.047

(1.194)

0.028

(0.711)

0.050

(1.270)

0.022

(0.559)

Return to Index

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Legal Disclaimer Notice

www.vishay.com Vishay

Revision: 01-Jan-2023 1Document Number: 91000

Disclaimer

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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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Vishay SI4946BEY-T1-E3 Owner's manual

Vishay SI4946BEY-T1-E3 Owner's manual

Vishay SI4946BEY-T1-E3 Owner's manual

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