Panasonic 2SB1321A User manual

Panasonic
Brand
Panasonic
Model
2SB1321A
Type
User manual

This manual is also suitable for

Panasonic 2SB1321A is a silicon PNP epitaxial planar transistor designed for low-frequency output amplification and driver amplification. It is complementary to 2SD1992A and allows supply with radial taping. With a large collector power dissipation of 600 mW, it can handle significant power.

The device features a collector-base voltage of -60 V, a collector-emitter voltage of -50 V, and an emitter-base voltage of -7 V. It has a collector current of -0.5 A and a peak collector current of -1 A. The transition frequency is 200 MHz (VCB = -10 V, IE = 10 mA, f = 200 MHz) and the collector output capacitance is 15 pF (VCE = -10 V, IC = -10 mA).

Panasonic 2SB1321A is a silicon PNP epitaxial planar transistor designed for low-frequency output amplification and driver amplification. It is complementary to 2SD1992A and allows supply with radial taping. With a large collector power dissipation of 600 mW, it can handle significant power.

The device features a collector-base voltage of -60 V, a collector-emitter voltage of -50 V, and an emitter-base voltage of -7 V. It has a collector current of -0.5 A and a peak collector current of -1 A. The transition frequency is 200 MHz (VCB = -10 V, IE = 10 mA, f = 200 MHz) and the collector output capacitance is 15 pF (VCE = -10 V, IC = -10 mA).

Transistors
1
Publication date: March 2003 SJC00079BED
2SB1321A
Silicon PNP epitaxial planar type
For low-frequency output amplification and driver amplification
Complementary to 2SD1992A
■ Features
• Allowing supply with the radial taping
• Large collector power dissipation P
C
(600 mW)
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−60 V
Collector-emitter voltage (Base open) V
CEO
−50 V
Emitter-base voltage (Collector open) V
EBO
−7V
Collector current I
C
− 0.5 A
Peak collector current I
CP
−1A
Collector power dissipation P
C
600 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= −10 µA, I
E
= 0 −60 V
Collector-emitter voltage (Base open) V
CEO
I
C
= −2 mA, I
B
= 0 −50 V
Emitter-base voltage (Collector open) V
EBO
I
E
= −10 µA, I
C
= 0 −7V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= −20 V, I
E
= 0 − 0.1 µA
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= −20 V, I
B
= 0 −1 µA
Forward current transfer ratio h
FE1
*
2
V
CE
= −10 V, I
C
= −10 mA 85 340
h
FE2
*
1
V
CE
= −10 V, I
C
= −500 mA 40
Collector-emitter saturation voltage V
CE(sat)
I
C
= −300 mA, I
B
= −30 mA − 0.35 − 0.60 V
Transition frequency f
T
V
CB
= −10 V, I
E
= 10 mA, f = 200 MHz 200 MHz
Collector output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz 6 15 pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
1: Pulse measurement
*
2: Rank classification
Rank Q R S No-rank
h
FE1
85 to 170 120 to 240 170 to 340 85 to 340
Product of no-rank is not classified and have no marking symbol for rank.
6.9
±0.1
2.5
±0.1
0.45
1.05
±0.05
2.5
±0.5
123
2.5
±0.5
+0.10
–0.05
0.45
+0.10
–0.05
(0.8)
(0.8)
(1.0)(0.85)
3.5
±0.1
14.5
±0.5
(0.7) (4.0)
0.65 max.
Unit: mm
1: Emitter
2: Collector
3: Base
MT-1-A1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1321A
2
SJC00079BED
V
CE(sat)
I
C
V
BE(sat)
I
C
h
FE
I
C
P
C
T
a
I
C
V
CE
I
C
I
B
f
T
I
E
C
ob
V
CB
V
CER
R
BE
0
0 16040 12080
200
600
400
800
Ambient temperature T
a
(
°C
)
Collector power dissipation P
C
(
mW
)
0 –12–2 –10–4 –8–6
0
−1.2
−1.0
−
0.8
−
0.6
−
0.4
−
0.2
−9 mA
−8 mA
−7 mA
−6 mA
−5 mA
−4 mA
−3 mA
−2 mA
−1 mA
I
B
= −10 mA
Collector-emitter voltage V
CE
(
V
)
Collector current I
C
(
A
)
T
a
= 25°C
0 −10−8−6−4−2
0
−
0.8
−
0.6
−
0.2
−
0.5
−
0.7
−
0.4
−
0.1
−
0.3
Base current I
B
(
mA
)
Collector current I
C
(
A
)
V
CE
= −10 V
T
a
= 25°C
−1
−10
−100
−1 −10
T
a
= 75°C
25°C
−25°C
Collector-emitter saturation voltage V
CE(sat)
(
V
)
Collector current I
C
(
A
)
I
C
/ I
B
= 10
− 0.01
− 0.01
− 0.1
− 0.1
−1
−10
−100
−1 −10
T
a
= −25°C
75°C
25°C
− 0.01
− 0.1
Base-emitter saturation voltage V
BE(sat)
(
V
)
Collector current I
C
(
A
)
I
C
/ I
B
= 10
− 0.01
− 0.1
0
600
500
400
300
200
100
−1 −10
T
a
= 75°C
25°C
−25°C
Forward current transfer ratio h
FE
V
CE
= −10 V
− 0.01
− 0.1
Collector current I
C
(
A
)
1 10 100
0
240
200
160
120
80
40
Transition frequency f
T
(
MHz
)
Emitter current I
E
(
mA
)
V
CB
= −10 V
T
a
= 25°C
0
−1
24
20
16
12
8
4
−10 −100
Collector-base voltage V
CB
(
V
)
I
E
= 0
f = 1 MHz
T
a
= 25°C
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
1 10 100 1
000
0
−120
−100
−80
−60
−40
−20
Base-emitter resistance R
BE
(
kΩ
)
I
C
= −2 mA
T
a
= 25°C
Collector-emitter voltage
(Resistor between B and E)
V
CER
(V)
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1321A
3
SJC00079BED
I
CEO
T
a
1
10
10
2
10
3
10
4
Ambient temperature T
a
(
°C
)
02001601208040
V
CE
= −10 V
I
CEO
(
T
a
)
I
CEO
(
T
a
= 25°C
)
This product complies with the RoHS Directive (EU 2002/95/EC).
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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Panasonic 2SB1321A User manual

Panasonic
Brand
Panasonic
Model
2SB1321A
Type
User manual
This manual is also suitable for

Panasonic 2SB1321A is a silicon PNP epitaxial planar transistor designed for low-frequency output amplification and driver amplification. It is complementary to 2SD1992A and allows supply with radial taping. With a large collector power dissipation of 600 mW, it can handle significant power.

The device features a collector-base voltage of -60 V, a collector-emitter voltage of -50 V, and an emitter-base voltage of -7 V. It has a collector current of -0.5 A and a peak collector current of -1 A. The transition frequency is 200 MHz (VCB = -10 V, IE = 10 mA, f = 200 MHz) and the collector output capacitance is 15 pF (VCE = -10 V, IC = -10 mA).

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