Transistors
Publication date : October 2008 SJC00420AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC1318
Silicon NPN epitaxial planar type
For low-frequency power amplification and driver amplification
Complementary to 2SA0720
Features
Low collector-emitter saturation voltage V
CE(sat)
Complementary pair with 2SA0720
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
60 V
Collector-emitter voltage (Base open) V
CEO
50 V
Emitter-base voltage (Collector open) V
EBO
7 V
Collector current I
C
0.5 A
Peak collector current I
CP
1 A
Collector power dissipation P
C
625 mW
Junction temperature T
j
150
°C
Storage temperature T
stg
–55 to +150
°C
Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 10 mA, I
E
= 0 60 V
Collector-emitter voltage (Base open) V
CEO
I
C
= 10 mA, I
B
= 0 50 V
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 mA, I
C
= 0 7 V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 20 V, I
E
= 0 0.1
mA
Forward current transfer ratio
h
FE1
*
V
CE
= 10 V, I
C
= 150 mA 85 340
h
FE2
V
CE
= 10 V, I
C
= 500 mA 40
Collector-emitter saturation voltage V
CE(sat)
I
C
= 300 mA, I
B
= 30 mA 0.35 0.60 V
Base-emitter saturation voltage V
BE(sat)
I
C
= 300 mA, I
B
= 30 mA 1.1 1.5 V
Transition frequency f
T
V
CB
= 10 V, I
E
= –50 mA, f = 200 MHz 200 MHz
Collector output capacitance
(Common base, input open circuited)
C
re
V
CB
= 10 V, I
E
= 0, f = 1 MHz 6 15 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Rank Q R S
h
FE1
85 to 170 120 to 240 170 to 340
Package
Code
TO-92B-B1
Pin Name
1. Emitter
2. Collector
3. Base
2SC1318
2 SJC00420AED
This product complies with the RoHS Directive (EU 2002/95/EC).
P
C
T
a
I
C
V
CE
I
C
I
B
V
CE(sat)
I
C
V
BE(sat)
I
C
h
FE
I
C
0 16040 12080
0
800
600
200
400
Collector power dissipation P
C
(mW)
Ambient temperature T
a
(°C)
2SC1318_PC-Ta
0 20164 128
0
0.8
0.6
0.2
0.5
0.7
0.4
0.1
0.3
T
a
= 25°C
I
B
= 10 mA
9 mA
8 mA
7 mA
6 mA
5 mA
4 mA
3 mA
2 mA
1 mA
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
2SC1318_IC-VCE
0.01 0.1 1 10
0.01
0.1
1
10
100
I
C
/ I
B
= 10
T
a
= 75°C
25°C
−25°C
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(A)
2SC1318_VCE(sat)-IC
0.01 0.1 1 10
0.01
0.1
1
10
100
I
C
/ I
B
= 10
T
a
= 75°C
−25°C
25°C
Base-emitter saturation voltage V
BE(sat)
(V)
Collector current I
C
(A)
2SC1318_VBE(sat)-IC
0.01 0.1 1 10
0
300
250
200
150
100
50
V
CE
= 10 V
T
a
= 75°C
25°C
−25°C
Forward current transfer ratio h
FE
Collector current I
C
(A)
2SC1318_hFE-IC
−1 −10 −100
0
240
200
160
120
80
40
V
CB
= 10 V
T
a
= 25°C
Transition frequency f
T
(MHz)
Emitter current I
E
(mA)
2SC1318_fT-IE
1 10 100
0
12
10
8
6
4
2
I
E
= 0
f = 1 MHz
T
a
= 25°C
Collector-base voltage V
CB
(V)
2SC1318_Cob-VCB
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
1 10 100 1000
0
120
100
80
60
40
20
I
C
= 2 mA
T
a
= 25°C
Base-emitter resistance R
BE
(kΩ)
2SC1318_VCER-RBE
Collector-emitter voltage
(Resistor between B and E)
V
CER
(V)
0 1082 64
0
0.8
0.6
0.2
0.5
0.7
0.4
0.1
0.3
V
CE
= 10 V
T
a
= 25°C
Base current I
B
(mA)
Collector current I
C
(A)
2SC1318_IC-IB
f
T
I
E
C
ob
V
CB
V
CER
R
BE
2SC1318
SJC00420AED 3
This product complies with the RoHS Directive (EU 2002/95/EC).
I
CEO
T
a
Safe operation area
0 20016040 12080
1
10
10
2
10
3
10
4
V
CE
= 10 V
Ambient temperature T
a
(°C)
I
CEO
(T
a
)
I
CEO
(T
a
= 25°C)
2SC1317_ICEO-Ta
0.1 1 10 100
0.001
0.01
0.1
1
10
Single pulse
T
a
= 25ºC
t = 10 ms
t = 1 s
DC
I
CP
I
C
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
2SC1318_ASO
2SC1318
4 SJC00420AED
This product complies with the RoHS Directive (EU 2002/95/EC).
TO-92-B1 Unit: mm
5.0 ±0.2
5.1 ±0.212.9 ±0.5
0.7 ±0.2
0.7 ±0.1
0.45
4.0 ±0.2
0.45
2.3 ±0.2
1
2
3
2.5
2.5
+0.15
−0.1
+0.6
−0.2
+0.15
−0.1
+0.6
−0.2
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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Consult our sales staff in advance for information on the following applications:
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Standards in advance to make sure that the latest specifications satisfy your requirements.
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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