1
Transistors
Publication date: March 2003 SJC00114BED
2SC2404
Silicon NPN epitaxial planar type
For high-frequency amplification
■ Features
• Optimum for RF amplification of FM/AM radios
• High transition frequency f
T
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
30 V
Collector-emitter voltage (Base open) V
CEO
20 V
Emitter-base voltage (Collector open) V
EBO
3V
Collector current I
C
15 mA
Collector power dissipation P
C
150 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 10 µA, I
E
= 030V
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 µA, I
C
= 03V
Base-emitter voltage V
BE
V
CB
= 6 V, I
E
= −1 mA 0.72 V
Forward current transfer ratio
*
h
FE
V
CB
= 6 V, I
E
= −1 mA 65 260
Transition frequency f
T
V
CB
= 6 V, I
E
= −1 mA, f = 100 MHz 450 650 MHz
Reverse transfer capacitance C
re
V
CB
= 6 V, I
E
= −1 mA, f = 10.7 MHz 0.8 1.0 pF
(Common emitter)
Power gain G
P
V
CB
= 6 V, I
E
= −1 mA, f = 100 MHz 24 dB
Noise figure NF V
CB
= 6 V, I
E
= −1 mA, f = 100 MHz 3.3 dB
Unit: mm
■ Electrical Characteristics T
a
= 25°C ± 3°C
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
0.40
+0.10
–0.05
(0.65)
1.50
+0.25
–0.05
2.8
+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4±0.2
5˚
10˚
0 to 0.1
1.1
+0.2
–0.1
1.1
+0.3
–0.1
Marking Symbol: U
Rank C D
h
FE
65 to 160 100 to 260
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC2404
2
SJC00114BED
I
C
V
BE
V
CE(sat)
I
C
h
FE
I
C
P
C
T
a
I
C
V
CE
I
C
I
B
f
T
I
E
C
re
V
CE
C
ob
V
CB
0 16040 12080
0
200
160
120
80
40
Collector power dissipation P
C
(
mW
)
Ambient temperature T
a
(
°C
)
048 1612
0
12
10
8
6
4
2
T
a
= 25°C
I
B
= 100 µA
80 µA
60 µA
40 µA
20 µA
Collector current I
C
(
mA
)
Collector-emitter voltage V
CE
(
V
)
04080 160120
0
12
10
8
6
4
2
V
CE
= 6 V
T
a
= 25°C
Base current I
B
(
µA
)
Collector current I
C
(
mA
)
0 2.01.60.4 1.20.8
0
30
25
20
15
10
5
V
CE
= 6 V
T
a
= 75°C
−25°C
25°C
Base-emitter voltage V
BE
(
V
)
Collector current I
C
(
mA
)
0.1 1 10 100
0.01
0.1
1
10
100
I
C
/ I
B
= 10
T
a
= 75°C
25°C
−25°C
Collector-emitter saturation voltage V
CE(sat)
(
V
)
Collector current I
C
(
mA
)
0.1 1 10 100
0
360
300
240
180
120
60
V
CE
= 6 V
T
a
= 75°C
25°C
−25°C
Forward current transfer ratio h
FE
Collector current I
C
(
mA
)
− 0.1 −1 −10 −100
0
1 200
1 000
800
600
400
200
V
CB
= 6 V
T
a
= 25°C
Transition frequency f
T
(
MHz
)
Emitter current I
E
(
mA
)
0.1 1 10 100
0
2.4
2.0
1.6
1.2
0.8
0.4
I
C
= 1 mA
f = 10.7 MHz
T
a
= 25°C
Collector-emitter voltage V
CE
(
V
)
Reverse transfer capacitance
C
re
(pF)
(Common emitter)
030252051510
0
1.2
1.0
0.8
0.6
0.4
0.2
I
E
= 0
f = 1 MHz
T
a
= 25°C
Collector-base voltage V
CB
(
V
)
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC2404
3
SJC00114BED
G
P
I
E
NF I
E
b
ie
g
ie
b
re
g
re
b
fe
g
fe
b
oe
g
oe
− 0.1 −1 −10 −100
0
40
30
10
25
35
20
5
15
f = 100 MHz
R
g
= 50 Ω
T
a
= 25°C
V
CE
= 10 V
6 V
Power gain G
P
(
dB
)
Emitter current I
E
(
mA
)
− 0.1 −1 −10 −100
0
12
10
8
6
4
2
f = 100 MHz
R
g
= 50 kΩ
T
a
= 25°C
V
CE
= 6 V, 10 V
Noise figure NF
(
dB
)
Emitter current I
E
(
mA
)
015936 12
0
20
16
12
8
4
18
14
10
6
2
y
ie
= g
ie
+ jb
ie
V
CE
= 10 V
100
100
−2 mA
−1 mA
−4 mA
−7 mA
I
E
= − 0.5 mA
150
f = 10.7 MHz
58
25
58
25
Input conductance g
ie
(
mS
)
Input susceptance b
ie
(
mS
)
− 0.5 0− 0.1− 0.4 − 0.2− 0.3
−6
0
−1
−2
−3
−4
−5
y
re
= g
re
+ jb
re
V
CE
= 10 V
f = 150 MHz
I
E
= −7 mA
−4 mA
−1 mA
25
58
100
10.7
Reverse transfer conductance g
re
(
mS
)
Reverse transfer susceptance b
re
(
mS
)
0 1008020 6040
−120
0
−20
−40
−60
−80
−100
y
fe
= g
fe
+ jb
fe
V
CE
= 10 V
f = 150 MHz
10.7
− 0.4 mA
−1 mA
−2 mA
−4 mA
I
E
= −7 mA
100
100
100
150
150
58
58
Forward transfer conductance g
fe
(
mS
)
Forward transfer susceptance b
fe
(
mS
)
0 0.50.40.1 0.30.2
0
1.2
1.0
0.8
0.6
0.4
0.2
y
oe
= g
oe
+ jb
oe
V
CE
= 10 V
f = 10.7 MHz
I
E
= − 0.5 mA
−2 mA
−4 mA
−7 mA
−1 mA
58
25
100
150
Output conductance g
oe
(
mS
)
Output susceptance b
oe
(
mS
)
This product complies with the RoHS Directive (EU 2002/95/EC).
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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