Panasonic Network Card 2SA2021G User manual

Panasonic
Brand
Panasonic
Model
Network Card 2SA2021G
Type
User manual

This manual is also suitable for

Panasonic Network Card 2SA2021G is a Silicon PNP epitaxial planar type transistor designed for general amplification. Its key features include a high forward current transfer ratio hFE, making it suitable for applications where high current gain is required. The 2SA2021G is complementary to the 2SC5609G transistor, allowing for complementary amplifier designs.

The 2SA2021G has a maximum collector current of -100mA and a maximum collector power dissipation of 100mW. It is packaged in the SSSMini3-F2 package, with three pins for base, emitter, and collector connections.

Panasonic Network Card 2SA2021G is a Silicon PNP epitaxial planar type transistor designed for general amplification. Its key features include a high forward current transfer ratio hFE, making it suitable for applications where high current gain is required. The 2SA2021G is complementary to the 2SC5609G transistor, allowing for complementary amplifier designs.

The 2SA2021G has a maximum collector current of -100mA and a maximum collector power dissipation of 100mW. It is packaged in the SSSMini3-F2 package, with three pins for base, emitter, and collector connections.

Transistors
Publication date : November 2008 SJC00426BED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA2021G
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC5609G
Features
High forward current transfer ratio h
FE
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
–60 V
Collector-emitter voltage (Base open) V
CEO
–50 V
Emitter-base voltage (Collector open) V
EBO
–7 V
Collector current I
C
–100 mA
Peak collector current I
CP
–200 mA
Collector power dissipation P
C
100 mW
Junction temperature T
j
125
°C
Storage temperature T
stg
–55 to +125
°C
Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= –10 mA, I
E
= 0 –60 V
Collector-emitter voltage (Base open) V
CEO
I
C
= –100 mA, I
B
= 0 –50 V
Emitter-base voltage (Collector open) V
EBO
I
E
= –10 mA, I
C
= 0 –7 V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= –20 V, I
E
= 0 – 0.1
mA
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= –10 V, I
B
= 0 –100
mA
Forward current transfer ratio h
FE
V
CE
= –10 V, I
C
= –2 mA 180 390
Collector-emitter saturation voltage V
CE(sat)
I
C
= –100 mA, I
B
= –10 mA – 0.3 – 0.5 V
Transition frequency f
T
V
CB
= –10 V, I
E
= 1 mA, f = 200 MHz 80 MHz
Collector output capacitance
(Common base, input open circuited)
C
re
V
CB
= –10 V, I
E
= 0, f = 1 MHz 2.7 15 pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Package
Code
SSSMini3-F2
Pin Name
1. Base
2. Emitter
3. Collector
Marking Symbol: 3E
2SA2021G
2 SJC00426BED
This product complies with the RoHS Directive (EU 2002/95/EC).
I
C
V
BE
V
CE(sat)
I
C
h
FE
I
C
0 40 12080
0
140
40
60
20
100
120
80
2SA2021G_P
C
-T
a
Collector power dissipation P
C
(
mW
)
Ambient temperature T
a
(
°C
)
0 −4 −8 −12
0
−10
−20
−30
−40
−50
−60
−70
2SA2021G_I
C
-V
CE
Collector current I
C
(
mA
)
Collector-emitter voltage V
CE
(
V
)
T
a
= 25°C
−50 µA
−100 µA
−150 µA
−200 µA
−250 µA
I
B
= −300 µA
0 − 0.2 − 0.6 − 0.8− 0.4 −1.0
0
−20
−40
−60
−80
−100
−120
−140
2SA2021G_I
C
-I
B
Collector current I
C
(
mA
)
Base current I
B
(
V
)
V
CE
= −10 V
T
a
= 25°C
0
− 0.4− 0.2 − 0.8 −1.0− 0.6 −1.2 −1.4
0
−30
−40
−50
−20
−10
−60
−70
−80
−90
−100
2SA2021G_I
C
-V
BE
Collector current I
C
(
mA
)
Base-emitter voltage V
BE
(
V
)
V
CE
= −10 V
T
a
= 85°C
25°C
−25°C
− 0.1 −1 −10 −100
− 0.01
− 0.1
−1
Collector current I
C
(
mA
)
Collector-emitter saturation voltage V
CE(sat)
(
V
)
2SA2021G_V
CE(sat)
-I
C
I
C
/I
B
= 10
T
a
= 85°C
25°C
−25°C
−1 −10 −100
−1
000
0
300
350
250
50
100
200
150
Collector current I
C
(
mA
)
Forward current transfer ratio h
FE
2SA2021G_h
FE
-I
C
V
CE
= −10 V
T
a
= 85°C
25°C
−25°C
0 −8 −24−16 −32 −40
1
100
10
Collector-base voltage V
CB
(
V
)
2SA2021G_C
ob
-V
CB
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
f = 1 MHz
T
a
= 25°C
C
ob
V
CB
P
C
T
a
I
C
V
CE
I
C
I
B
2SA2021G
SJC00426BED 3
This product complies with the RoHS Directive (EU 2002/95/EC).
SSSMini3-F2 Unit: mm
0.30
+0.05
−0.02
0.20
+0.05
−0.02
0.13
+0.05
−0.02
(0.4)
(0.4)
0.80 ±0.05
0.80 ±0.05
0.51 ±0.04
1.20 ±0.05
1.20 ±0.05
0.20 ±0.05
3
1
2
(0.27)
5
°
0 to 0.05
(0.5)
5°
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
20080805
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Panasonic Network Card 2SA2021G User manual

Panasonic
Brand
Panasonic
Model
Network Card 2SA2021G
Type
User manual
This manual is also suitable for

Panasonic Network Card 2SA2021G is a Silicon PNP epitaxial planar type transistor designed for general amplification. Its key features include a high forward current transfer ratio hFE, making it suitable for applications where high current gain is required. The 2SA2021G is complementary to the 2SC5609G transistor, allowing for complementary amplifier designs.

The 2SA2021G has a maximum collector current of -100mA and a maximum collector power dissipation of 100mW. It is packaged in the SSSMini3-F2 package, with three pins for base, emitter, and collector connections.

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