Vishay IRF740AS Owner's manual

Brand: Vishay

Model: IRF740AS

Type: Owner's manual

Vishay IRF740AS is an N-Channel MOSFET designed for use in power switching applications. It features low gate charge (Qg) for efficient drive requirement, improved gate, avalanche, and dynamic dV/dt ruggedness. The device also provides fully characterized capacitance and avalanche voltage and current. It is commonly utilized in applications such as switch mode power supply (SMPS), uninterruptible power supply, and high-speed power switching.

IRF740AS, SiHF740AS, IRF740AL, SiHF740AL

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S21-0901-Rev. D, 30-Aug-2021 1Document Number: 91052

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Power MOSFET

FEATURES

• Low gate charge Qg results in cimple drive

requirement

• Improved gate, avalanche, and dynamic dV/dt

ruggedness

• Fully characterized capacitance and avalanche

voltage and current

• Effective Coss specified

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note

This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details

APPLICATIONS

• Switch mode power supply (SMPS)

• Uninterruptible power supply

• High speed power switching

TYPICAL SMPS TOPOLOGIES

• Single transistor flyback Xfmr. reset

• Single transistor forward Xfmr. reset (both for US line

input only)

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. Starting TJ = 25 °C, L = 12.6 mH, Rg = 25 Ω, IAS = 10 A (see fig. 12)

c. ISD ≤ 10 A, dI/dt ≤ 330 A/μs, VDD ≤ VDS, TJ ≤ 150 °C

d. 1.6 mm from case

e. Uses IRF740A, SiHF740A data and test conditions

PRODUCT SUMMARY

VDS (V) 400

RDS(on) (Ω)V

GS = 10 V 0.55

Qg (Max.) (nC) 36

Qgs (nC) 9.9

Qgd (nC) 16

Configuration Single

N-Channel MOSFET

PAK (TO-263)

PAK (TO-262)

GDS

Available

ORDERING INFORMATION

Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262)

Lead (Pb)-free and Halogen-free SiHF740AS-GE3 SiHF740ASTRL-GE3aSiHF740ASTRR-GE3aSiHF740AL-GE3

Lead (Pb)-free IRF740ASPbF IRF740ASTRLPbFaIRF740ASTRRPbFaIRF740ALPbF

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage VDS 400 V

Gate-Source Voltage VGS ± 30

Continuous Drain CurrenteVGS at 10 V TC = 25 °C ID

ATC = 100 °C 6.3

Pulsed Drain Currenta, e IDM 40

Linear Derating Factor 1.0 W/°C

Single Pulse Avalanche Energyb, e EAS 630 mJ

Avalanche CurrentaIAR 10 A

Repetiitive Avalanche EnergyaEAR 12.5 mJ

Maximum Power Dissipation TA = 25 °C PD

3.1 W

TC = 25 °C 125

Peak Diode Recovery dV/dtc, e dV/dt 5.9 V/ns

Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C

Soldering Recommendations (Peak Temperature) for 10 s 300d

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Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.

c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.

d. Uses IRF740A, SiHF740A data and test conditions.

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient (PCB

Mounted, Steady-State)aRthJA -40

°C/W

Maximum Junction-to-Case (Drain) RthJC -1.0

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage VDS VGS = 0, ID = 250 μA 400 - - V

VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mAd-0.48-V/°C

Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V

Gate-Source Leakage IGSS V

GS = ± 30 V - - ± 100 nA

Zero Gate Voltage Drain Current IDSS

VDS = 400 V, VGS = 0 V - - 25 μA

VDS = 320 V, VGS = 0 V, TJ = 125 °C - - 250

Drain-Source On-State Resistance RDS(on) V

GS = 10 V ID = 6.0 Ab- - 0.55 Ω

Forward Transconductance gfs VDS = 50 V, ID = 6.0 Ad4.9 - - S

Dynamic

Input Capacitance Ciss VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5d

- 1030 -

Output Capacitance Coss - 170 -

Reverse Transfer Capacitance Crss -7.7-

Output Capacitance Coss VGS = 0 V

VDS = 1.0 V, f = 1.0 MHz - 1490 -

VDS = 320 V, f = 1.0 MHz - 52 -

Effective Output Capacitance Coss eff. VDS = 0 V to 320 Vc, d -61-

Total Gate Charge Qg

VGS = 10 V ID = 10 A, VDS = 320 V,

see fig. 6 and 13b, d

--36

nC Gate-Source Charge Qgs --9.9

Gate-Drain Charge Qgd --16

Turn-On Delay Time td(on)

VDD = 200 V, ID = 10 A,

Rg = 10 Ω, RD = 19.5 Ω, see fig. 10b, d

-10-

Rise Time tr -35-

Turn-Off Delay Time td(off) -24-

Fall Time tf -22-

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current ISMOSFET symbol

showing the

integral reverse

p - n junction diode

--10

Pulsed Diode Forward CurrentaISM --40

Body Diode Voltage VSD TJ = 25 °C, IS = 10 A, VGS = 0 Vb--2.0V

Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μsb, d - 240 360 ns

Body Diode Reverse Recovery Charge Qrr -1.92.9μC

Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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S21-0901-Rev. D, 30-Aug-2021 3Document Number: 91052

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Transfer Characteristics

Fig. 3 - Normalized On-Resistance vs. Temperature

91052_01

Bottom

To p

VGS

15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width

TJ = 25 °C

4.5 V

, Drain-to-Source Voltage (V)

, Drain-to-Source Current (A)

102

0.1

10-2

1100.1 102

VDS, Drain-to-Source Voltage (V)

ID, Drain-to-Source Current (A)

Bottom

To p

VGS

15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width

TJ = 150 °C

91052_02

4.5 V

102

0.1

1100.1 102

20 µs Pulse Width

VDS = 50 V

ID, Drain-to-Source Current (A)

VGS, Gate-to-Source Voltage (V)

5.0 6.0 7.0 8.0 9.0 10.0

4.0

91052_03

102

0.1

TJ = 25 °C

TJ = 150 °C

= 10 A

= 10 V

3.0

0.0

0.5

1.0

1.5

2.0

2.5

TJ, Junction Temperature (°C)

RDS(on), Drain-to-Source On Resistance

(Normalized)

91052_04

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

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IRF740AS, SiHF740AS, IRF740AL, SiHF740AL

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Fig. 4 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 5 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 6 - Typical Source-Drain Diode Forward Voltage

Fig. 7 - Maximum Safe Operating Area

10 102

C, Capacitance (pF)

DS,

Drain-to-Source Voltage (V)

Ciss

Crss

Coss

VGS = 0 V, f = 1 MHz

Ciss = Cgs + Cgd, Cds Shorted

Crss = Cgd

Coss = Cds + Cgd

91052_05

105

102

103

104

1103

, Total Gate Charge (nC)

, Gate-to-Source Voltage (V)

04020 3010

= 80 V

= 200 V

For test circuit

see figure 13

= 320 V

91052_06

= 10 A

102

, Source-to-Drain Voltage (V)

, Reverse Drain Current (A)

0.2 1.0

0.80.60.4

= 0 V

91052_07

TJ = 25 °C

TJ = 150 °C

0.1

1.41.2

10 µs

100 µs

1 ms

10 ms

Operation in this area limited

by RDS(on)

VDS, Drain-to-Source Voltage (V)

ID, Drain Current (A)

TC = 25 °C

TJ = 150 °C

Single Pulse

102

10 102103

91052_08

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S21-0901-Rev. D, 30-Aug-2021 5Document Number: 91052

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Fig. 8 - Maximum Drain Current vs. Case Temperature

Fig. 10a - Switching Time Test Circuit

Fig. 10b - Switching Time Waveforms

Fig. 9 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

ID, Drain Current (A)

TC, Case Temperature (°C)

0.0

2.0

4.0

6.0

8.0

10.0

25 1501251007550

91052_09

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

VGS

D.U.T.

10 V

VDS

VDD

VDS

90 %

10 %

VGS

td(on) trtd(off) tf

0.1

10-2

10-5 10-4 10-3 10-2 0.1 1 10

PDM

t1, Rectangular Pulse Duration (s)

Thermal Response (ZthJC)

Notes:

1. Duty Factor, D = t1/t2

2. Peak Tj = PDM x ZthJC + TC

Single Pulse

(Thermal Response)

D = 0.50

0.20

0.05

0.02

0.01

91052_11

0.10

10-3

IAS

0.01 Ω

D.U.T

VDS

-VDD

Driver

15 V

20 V IAS

VDS

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S21-0901-Rev. D, 30-Aug-2021 6Document Number: 91052

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Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Fig. 13a - Basic Gate Charge Waveform

Fig. 12d - Typlical Drain-to-Source Voltage

vs. Avalanche Current

Fig. 13b - Gate Charge Test Circuit

1400

400

600

800

1000

1200

25 150

125

10075

Starting TJ, Junction Temperature (°C)

EAS, Single Pulse Avalanche Energy (mJ)

Bottom

To p

4.5 A

6.3 A

10 A

91052_12c

200

QGS QGD

Charge

VGS

560

480

520

540

1.0 6.0

5.0

4.03.0

2.0

, Avalanche Current (A)

DSav

, Avalanche Voltage (V)

580

9.0

8.0

7.0

91052_12d

500

10.0

D.U.T.

3 mA

VGS

VDS

IGID

0.3 µF

0.2 µF

50 kΩ

12 V

Current regulator

Current sampling resistors

Same type as D.U.T.

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S21-0901-Rev. D, 30-Aug-2021 7Document Number: 91052

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Fig. 10 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?91052.

P.W. Period

dI/dt

Diode recovery

dV/dt

Ripple ≤ 5 %

Body diode forward drop

Re-applied

voltage

Reverse

recovery

current

Body diode forward

current

VGS = 10 Va

ISD

Driver gate drive

D.U.T. lSD waveform

D.U.T. VDS waveform

Inductor current

D = P.W.

Period

Peak Diode Recovery dV/dt Test Circuit

VDD

• dV/dt controlled by Rg

• Driver same type as D.U.T.

• ISD controlled by duty factor “D”

• D.U.T. - device under test

D.U.T. Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

Note

a. VGS = 5 V for logic level devices

VDD

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Document Number: 91364 www.vishay.com

Revision: 15-Sep-08 1

Package Information

Vishay Siliconix

TO-263AB (HIGH VOLTAGE)

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.

2. Dimensions are shown in millimeters (inches).

3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the

outmost extremes of the plastic body at datum A.

4. Thermal PAD contour optional within dimension E, L1, D1 and E1.

5. Dimension b1 and c1 apply to base metal only.

6. Datum A and B to be determined at datum plane H.

7. Outline conforms to JEDEC outline to TO-263AB.

Detail A

2 x e

2 x b2

2 x b

0.010 A B

MM ± 0.004 B

Base

metal

Plating b1, b3

(b, b2)

(c)

Section B - B and C - C

Scale: none

Lead tip

(Datum A)

2CC

View A - A

Seating plane

Gauge

plane

0° to 8°

Detail “A”

Rotated 90° CW

scale 8:1

L3 A1

MILLIMETERS INCHES MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.

A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 -

A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420

b 0.51 0.99 0.020 0.039 E1 6.22 - 0.245 -

b1 0.51 0.89 0.020 0.035 e 2.54 BSC 0.100 BSC

b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625

b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110

c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066

c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070

c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC

D 8.38 9.65 0.330 0.380 L4 4.78 5.28 0.188 0.208

ECN: S-82110-Rev. A, 15-Sep-08

DWG: 5970

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Document Number: 91367 www.vishay.com

Revision: 27-Oct-08 1

Package Information

Vishay Siliconix

I2PAK (TO-262) (HIGH VOLTAGE)

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.

2. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outmost

extremes of the plastic body.

3. Thermal pad contour optional within dimension E, L1, D1, and E1.

4. Dimension b1 and c1 apply to base metal only.

Base

metal

Plating b1, b3

(b, b2)

Section A - A

Section B - B and C - C

Scale: None

Seating

plane

Lead tip

(Datum A)

2 x e

3 x b2

3 x b

0.010 A B

MILLIMETERS INCHES MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.

A 4.06 4.83 0.160 0.190 D 8.38 9.65 0.330 0.380

A1 2.03 3.02 0.080 0.119 D1 6.86 - 0.270 -

b 0.51 0.99 0.020 0.039 E 9.65 10.67 0.380 0.420

b1 0.51 0.89 0.020 0.035 E1 6.22 - 0.245 -

b2 1.14 1.78 0.045 0.070 e 2.54 BSC 0.100 BSC

b3 1.14 1.73 0.045 0.068 L 13.46 14.10 0.530 0.555

c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.065

c1 0.38 0.58 0.015 0.023 L2 3.56 3.71 0.140 0.146

c2 1.14 1.65 0.045 0.065

ECN: S-82442-Rev. A, 27-Oct-08

DWG: 5977

AN826

Vishay Siliconix

Document Number: 73397

11-Apr-05

www.vishay.com

RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead

0.635

(16.129)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.420

(10.668)

0.355

(9.017)

0.145

(3.683)

0.135

(3.429)

0.200

(5.080)

0.050

(1.257)

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Revision: 01-Jan-2023 1Document Number: 91000

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Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited

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Vishay IRF740AS Owner's manual

Vishay IRF740AS Owner's manual

Vishay IRF740AS Owner's manual

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