Vishay IRF740S User manual

Brand: Vishay

Model: IRF740S

Type: User manual

Vishay IRF740S is a N-Channel MOSFET featuring low on-resistance, fast switching, rugged design, and cost-effectiveness. It can be used in various applications such as motor control, power supplies, and audio amplifiers. With its high current handling capability and low power dissipation, the IRF740S is suitable for high power applications. Additionally, it offers dynamic dV/dt rating, repetitive avalanche capability, and simple drive requirements, making it easy to use and integrate into existing designs.

IRF740S, SiHF740S

www.vishay.com Vishay Siliconix

S21-0901-Rev. D, 30-Aug-2021 1Document Number: 91055

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Power MOSFET

FEATURES

• Surface-mount

• Available in tape and reel

• Dynamic dV/dt rating

• Repetitive avalanche rated

• Fast switching

• Ease of paralleling

• Simple drive requirements

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note

This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details

DESCRIPTION

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The D2PAK (TO-263) is a surface-mount power package

capable of accommodating die size up to HEX-4. It provides

the highest power capability and the lowest possible

on-resistance in any existing surface-mount package. The

D2PAK (TO-263) is suitable for high current applications

because of its low internal connection resistance and can

dissipate up to 2.0 W in a typical surface mount application.

Note

a. See device orientation

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. VDD = 50 V, starting TJ = 25 °C, L = 9.1 mH, Rg = 25 Ω, IAS = 10 A (see fig. 12)

c. ISD ≤ 10A, dI/dt ≤ 120 A/μs, VDD ≤ VDS, TJ ≤ 150 °C

d. 1.6 mm from case

e. When mounted on 1" square PCB (FR-4 or G-10 material)

PRODUCT SUMMARY

VDS (V) 400

RDS(on) (Ω)V

GS = 10 V 0.55

Qg max. (nC) 63

Qgs (nC) 9.0

Qgd (nC) 32

Configuration Single

N-Channel MOSFET

PAK (TO-263)

Available

ORDERING INFORMATION

Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263)

Lead (Pb)-free and Halogen-free SiHF740S-GE3 SiHF740STRL-GE3 a SiHF740STRR-GE3 a

Lead (Pb)-free IRF740SPbF IRF740STRLPbF aIRF740STRRPbF a

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage VDS 400 V

Gate-Source Voltage VGS ± 20

Continuous Drain Current VGS at 10 V TC = 25 °C ID

ATC = 100 °C 6.3

Pulsed Drain Current a IDM 40

Linear Derating Factor 1.0 W/°C

Linear Derating Factor (PCB mount) e 0.025

Single Pulse Avalanche Energy b EAS 520 mJ

Avalanche Current aIAR 10 A

Repetitive Avalanche Energy aEAR 13 mJ

Maximum Power Dissipation TC = 25 °C PD

125 W

Maximum Power Dissipation (PCB mount) eTA = 25 °C 3.1

Peak Diode Recovery dV/dt cdV/dt 4.0 V/ns

Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C

Soldering Recommendations (Peak temperature) dFor 10 s 300

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S21-0901-Rev. D, 30-Aug-2021 2Document Number: 91055

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Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient RthJA -62

°C/W

Maximum Junction-to-Ambient

(PCB mount)aRthJA -40

Maximum Junction-to-Case (Drain) RthJC -1.0

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage VDS VGS = 0, ID = 250 μA 400 - - V

VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.49 - V/°C

Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V

Gate-Source Leakage IGSS V

GS = ± 20 V - - ± 100 nA

Zero Gate Voltage Drain Current IDSS

VDS = 400 V, VGS = 0 V - - 25 μA

VDS = 320 V, VGS = 0 V, TJ = 125 °C - - 250

Drain-Source On-State Resistance RDS(on) V

GS = 10 V ID = 6.0 A b - - 0.55 Ω

Forward Transconductance gfs VDS = 50 V, ID = 6.0 A b 5.8 - - S

Dynamic

Input Capacitance Ciss VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5

- 1400 -

pFOutput Capacitance Coss - 330 -

Reverse Transfer Capacitance Crss - 120 -

Total Gate Charge Qg

VGS = 10 V ID = 10 A, VDS = 320 V,

see fig. 6 and 13 b

--63

nC Gate-Source Charge Qgs --9.0

Gate-Drain Charge Qgd --32

Turn-On Delay Time td(on)

VDD = 200 V, ID = 10 A,

Rg = 9.1 Ω, RD = 20 Ω, see fig. 10 b

-14-

Rise Time tr -27-

Turn-Off Delay Time td(off) -50-

Fall Time tf -24-

Gate Input Resistance Rgf = 1 MHz, open drain 0.8 - 5.9 Ω

Internal Drain Inductance LD Between lead,

6 mm (0.25") from

package and center of

die contact

-4.5-

Internal Source Inductance LS-7.5-

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current IS

MOSFET symbol

showing the

integral reverse

p - n junction diode

--10

Pulsed Diode Forward Current a ISM --40

Body Diode Voltage VSD TJ = 25 °C, IS = 10 A, VGS = 0 V b--2.0V

Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μs b- 370 790 ns

Body Diode Reverse Recovery Charge Qrr -3.88.2μC

Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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IRF740S, SiHF740S

www.vishay.com Vishay Siliconix

S21-0901-Rev. D, 30-Aug-2021 3Document Number: 91055

For technical questions, contact: hvm@vishay.com

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, TC = 150 °C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

91055_01

Bottom

To p

VGS

15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width

TC = 25 °C

4.5 V

VDS, Drain-to-Source Voltage (V)

ID, Drain Current (A)

100101

101

100

10-1

101

100

10-1 100101

VDS, Drain-to-Source Voltage (V)

ID, Drain Current (A)

Bottom

To p

VGS

15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width

TC = 150 °C

91055_02

4.5 V

20 µs Pulse Width

VDS = 50 V

101

100

10-1

, Drain Current (A)

GS,

Gate-to-Source Voltage (V)

5678910

25 °C

150 °C

91055_03

= 10 A

= 10 V

3.0

0.0

0.5

1.0

1.5

2.0

2.5

Junction Temperature (°C)

DS(on)

, Drain-to-Source On Resistance

(Normalized)

91055_04

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

Ciss

Crss

Coss

VGS = 0 V, f = 1 MHz

Ciss = Cgs + Cgd, Cds Shorted

Crss = Cgd

Coss = Cds + Cgd

91055_05

2500

2000

1500

1000

500

100101

Capacitance (pF)

DS,

Drain-to-Source Voltage (V)

91055_06

= 10 A

= 200 V

For test circuit

see figure 13

= 80 V

= 320 V

QG, Total Gate Charge (nC)

VGS, Gate-to-Source Voltage (V)

015 75

6045

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www.vishay.com Vishay Siliconix

S21-0901-Rev. D, 30-Aug-2021 4Document Number: 91055

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 10a - Switching Time Test Circuit

Fig. 10b - Switching Time Waveforms

101

100

, Source-to-Drain Voltage (V)

, Reverse Drain Current (A)

0.50 1.30

1.100.900.70

25 °C

150 °C

= 0 V

91055_07

10-1

1.50

91055_08

10 µs

100 µs

1 ms

10 ms

Operation in this area limited

by RDS(on)

TC = 25 °C

TJ = 150 °C

Single Pulse

ID, Drain Current (A)

103

VDS, Drain-to-Source Voltage (V)

0.1 1 10 102103

25 25 2 5 25

0.1

102

91055_09

ID, Drain Current (A)

TC, Case Temperature (°C)

25 1501251007550

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

VGS

D.U.T.

10 V

VDS

VDD

VDS

90 %

10 %

VGS

td(on) trtd(off) tf

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IRF740S, SiHF740S

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S21-0901-Rev. D, 30-Aug-2021 5Document Number: 91055

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

91055_11

D = 0.5

0.2

0.1

0.05

0.01

Single Pulse

(Thermal Response)

PDM

Notes:

1. Duty Factor, D = t1/t2

2. Peak Tj = PDM x ZthJC + TC

0.02

Thermal Response (ZthJC)

0.1

10-2

t1, Rectangular Pulse Duration (S)

10-5 10-4 10-3 10-2 0.1 1 10

IAS

0.01 W

D.U.T

VDS

-VDD

10 V

Vary tp to obtain

required IAS

91055_12c

Bottom

To p

4.5 A

5.3 A

10 A

VDD = 50 V

1200

200

400

600

800

1000

25 150

125

10075

Starting TJ, Junction Temperature (°C)

EAS, Single Pulse Energy (mJ)

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IRF740S, SiHF740S

www.vishay.com Vishay Siliconix

S21-0901-Rev. D, 30-Aug-2021 6Document Number: 91055

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?91055.

QGS QGD

Charge

VGS

D.U.T.

3 mA

VGS

VDS

IGID

0.3 µF

0.2 µF

50 kΩ

12 V

Current regulator

Current sampling resistors

Same type as D.U.T.

P.W. Period

di/dt

Diode recovery

dv/dt

Ripple ≤ 5 %

Body diode forward drop

Re-applied

voltage

Reverse

recovery

current

Body diode forward

current

= 10 V

Driver gate drive

D.U.T. I

waveform

D.U.T. V

waveform

Inductor current

D = P.W.

Period

Note

a. VGS = 5 V for logic level devices

Peak Diode Recovery dv/dt Test Circuit

VDD

• dv/dt controlled by Rg

• Driver same type as D.U.T.

• ISD controlled by duty factor “D”

• D.U.T. - device under test

D.U.T. Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

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Document Number: 91364 www.vishay.com

Revision: 15-Sep-08 1

Package Information

Vishay Siliconix

TO-263AB (HIGH VOLTAGE)

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.

2. Dimensions are shown in millimeters (inches).

3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the

outmost extremes of the plastic body at datum A.

4. Thermal PAD contour optional within dimension E, L1, D1 and E1.

5. Dimension b1 and c1 apply to base metal only.

6. Datum A and B to be determined at datum plane H.

7. Outline conforms to JEDEC outline to TO-263AB.

Detail A

2 x e

2 x b2

2 x b

0.010 A B

MM ± 0.004 B

Base

metal

Plating b1, b3

(b, b2)

(c)

Section B - B and C - C

Scale: none

Lead tip

(Datum A)

2CC

View A - A

Seating plane

Gauge

plane

0° to 8°

Detail “A”

Rotated 90° CW

scale 8:1

L3 A1

MILLIMETERS INCHES MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.

A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 -

A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420

b 0.51 0.99 0.020 0.039 E1 6.22 - 0.245 -

b1 0.51 0.89 0.020 0.035 e 2.54 BSC 0.100 BSC

b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625

b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110

c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066

c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070

c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC

D 8.38 9.65 0.330 0.380 L4 4.78 5.28 0.188 0.208

ECN: S-82110-Rev. A, 15-Sep-08

DWG: 5970

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AN826

Vishay Siliconix

Document Number: 73397

11-Apr-05

www.vishay.com

RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead

0.635

(16.129)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.420

(10.668)

0.355

(9.017)

0.145

(3.683)

0.135

(3.429)

0.200

(5.080)

0.050

(1.257)

Return to Index

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Revision: 01-Jan-2023 1Document Number: 91000

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Vishay IRF740S User manual

Vishay IRF740S User manual

Vishay IRF740S User manual

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