Panasonic Network Card 2SB0710A User manual

Panasonic
Brand
Panasonic
Model
Network Card 2SB0710A
Type
User manual

This manual is also suitable for

Panasonic Network Card 2SB0710A:

The Panasonic Network Card 2SB0710A is a silicon PNP epitaxial planar type transistor designed for general amplification. It is complementary to the 2SD0602A transistor and features a large collector current and a mini type package, allowing for downsizing of equipment and automatic insertion through tape packing.

The 2SB0710A has a maximum collector-base voltage of -60 V, a maximum collector-emitter voltage of -50 V, and a maximum emitter-base voltage of -5 V. It has a maximum collector current of -0.5 A and a maximum collector power dissipation of 200 mW. The transistor has a typical forward current transfer ratio (hFE) of 340 and a typical collector-emitter saturation voltage (VCE(sat)) of -0.6 V.

Panasonic Network Card 2SB0710A:

The Panasonic Network Card 2SB0710A is a silicon PNP epitaxial planar type transistor designed for general amplification. It is complementary to the 2SD0602A transistor and features a large collector current and a mini type package, allowing for downsizing of equipment and automatic insertion through tape packing.

The 2SB0710A has a maximum collector-base voltage of -60 V, a maximum collector-emitter voltage of -50 V, and a maximum emitter-base voltage of -5 V. It has a maximum collector current of -0.5 A and a maximum collector power dissipation of 200 mW. The transistor has a typical forward current transfer ratio (hFE) of 340 and a typical collector-emitter saturation voltage (VCE(sat)) of -0.6 V.

Transistors
Publication date: October 2008 SJC00413AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB0710A
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD0602A
Features
Large collector current I
C
Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
-60
V
Collector-emitter voltage (Base open) V
CEO
-50
V
Emitter-base voltage (Collector open) V
EBO
-5
V
Collector current I
C
- 0.5
A
Peak collector current I
CP
-1
A
Collector power dissipation P
C
200 mW
Junction temperature T
j
150
°C
Storage temperature T
stg
-55 to +150
°C
Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= -10 mA, I
E
= 0
-60
V
Collector-emitter voltage (Base open) V
CEO
I
C
= -10 mA, I
B
= 0
-50
V
Emitter-base voltage (Collector open) V
EBO
I
E
= -10 mA, I
C
= 0
-5
V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= -20 V, I
E
= 0
- 0.1 mA
Forward current transfer ratio
*
1
h
FE1
*
2
V
CE
= -10 V, I
C
= -150 mA 85 340
h
FE2
V
CE
= -10 V, I
C
= -500 mA 40
Collector-emitter saturation voltage
*
1
V
CE(sat)
I
C
= -300 mA, I
B
= -30 mA
- 0.35 - 0.60
V
Base-emitter saturation voltage
*
1
V
BE(sat)
I
C
= -300 mA, I
B
= -30 mA
-1.1 -1.5
V
Transition frequency f
T
V
CB
= -10 V, I
E
= 50 mA, f = 200 MHz 200 MHz
Collector output capacitance
(Common base, input open circuited)
C
ob
V
CB
= -10 V, I
E
= 0, f = 1 MHz 6 15 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
1: Pulse measurement
*
2: Rank classification
Rank Q R S No-rank
h
FE1
85 to 170 120 to 240 170 to 340 85 to 340
Marking symbol DQ DR DS D
Product of no-rank is not classified and have no indication for rank.
Package
Code
Mini3-G1
Pin Name
1: Base
2: Emitter
3: Collector
Marking Symbol: D
2SB0710A
2 SJC00413AED
This product complies with the RoHS Directive (EU 2002/95/EC).
0
40
80
120 160
0
80
160
240
2SB0710A_ P
C
-T
a
Collector power dissipation P
C
(
mW
)
Ambient temperature T
a
(°C)
0
−4 −8 −12
0
−200
−400
−600
−800
2SB0710A_ I
C
-V
CE
Collector current I
C
(
mA
)
Collector-emitter voltage V
CE
(V)
T
a
= 25°C
I
B
= −10 mA
−9 mA
−8 mA
−7 mA
−6 mA
−5 mA
−4 mA
−3 mA
−2 mA
−1 mA
0
−8−4
0
−200
−600
−800
−400
2SB0710A_ I
C
-I
B
Collector current I
C
(
mA
)
Base current I
B
(mA)
V
CE
= −10 V
T
a
= 25°C
−1 −10 −10
2
−10
3
−10
−2
−10
−1
−10
−1
2SB0710A_ V
CE(sat)
-I
C
Collector-emitter saturation voltage V
CE(sat)
(
V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75°C
25°C
−25°C
−1 −10 −10
2
−10
3
−10
−2
−10
−1
−10
−1
2SB0710A_ V
BE(sat)
-I
C
Base-emitter saturation voltage V
BE(sat)
(
V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= −25°C
25°C
75°C
−10
−10
2
−10
3
0
100
200
300
400
2SB0710A_ h
FE
-I
C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= −10 V
T
a
= 75°C
25°C
−25°C
1
10 10
2
0
80
160
240
2SB0710A_ f
T
-I
E
Transition frequency f
T
(MHz)
Emitter current I
E
(mA)
V
CE
= −10 V
T
a
= 25°C
−1
−10 −10
2
0
8
16
24
2SB0710A_ C
ob
-V
CB
Collector output capacitance
(Common base, input open circuited) C
ob
(pF)
Collector-base voltage V
CB
(V)
I
E
= 0
f
= 1 MHz
T
a
= 25°C
1
10 10
3
10
2
0
−40
−80
−120
2SB0710A_ V
CER
-R
BE
Collector-emitter voltage
(Resistor between B and E) V
CER
(V)
Base-emitter resistance R
BE
(kΩ)
I
C
= −2 mA
T
a
= 25°C
P
C
T
a
I
C
V
CE
I
C
I
B
V
CE(sat)
I
C
V
BE(sat)
I
C
h
FE
I
C
f
T
I
E
C
ob
V
CB
V
CER
R
BE
2SB0710A
SJC00413AED 3
This product complies with the RoHS Directive (EU 2002/95/EC).
Mini3-G1 Unit: mm
(0.95)
(0.95)
1.9 ±0.1
0.40
1.50
2.8
2.90
3
2
1
5
°
0.4 ±0.2
0.16
1
0
°
1.1
1.1
0 to 0.1
(0.65)
+0.10
−0.05
+0.25
−0.05
+0.2
−0.3
+0.20
−0.05
+0.2
−0.1
+0.3
−0.1
+0.10
−0.05
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
20080805
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Panasonic Network Card 2SB0710A User manual

Panasonic
Brand
Panasonic
Model
Network Card 2SB0710A
Type
User manual
This manual is also suitable for

Panasonic Network Card 2SB0710A:

The Panasonic Network Card 2SB0710A is a silicon PNP epitaxial planar type transistor designed for general amplification. It is complementary to the 2SD0602A transistor and features a large collector current and a mini type package, allowing for downsizing of equipment and automatic insertion through tape packing.

The 2SB0710A has a maximum collector-base voltage of -60 V, a maximum collector-emitter voltage of -50 V, and a maximum emitter-base voltage of -5 V. It has a maximum collector current of -0.5 A and a maximum collector power dissipation of 200 mW. The transistor has a typical forward current transfer ratio (hFE) of 340 and a typical collector-emitter saturation voltage (VCE(sat)) of -0.6 V.

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