Vishay IRF9530PbF is a P-Channel MOSFET with a maximum drain-source voltage of -100 V, making it suitable for high-voltage applications. It features a low on-resistance of 0.30 Ω, enabling efficient power handling. The device offers fast switching speed, reducing power losses and improving circuit performance. Its ruggedized design makes it reliable for demanding applications. Additionally, it has a wide operating temperature range of -55 °C to 175 °C, ensuring stable operation in various environments.
Vishay IRF9530PbF is a P-Channel MOSFET with a maximum drain-source voltage of -100 V, making it suitable for high-voltage applications. It features a low on-resistance of 0.30 Ω, enabling efficient power handling. The device offers fast switching speed, reducing power losses and improving circuit performance. Its ruggedized design makes it reliable for demanding applications. Additionally, it has a wide operating temperature range of -55 °C to 175 °C, ensuring stable operation in various environments.
IRF9530
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S21-0852-Rev. D, 16-Aug-2021 1Document Number: 91076
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Power MOSFET
FEATURES
• Dynamic dV/dt rating
• Repetitive avalanche rated
•P-channel
• 175 °C operating temperature
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = -25 V, starting TJ = 25 °C, L = 4.2 mH, Rg = 25 Ω, IAS = -12 A (see fig. 12)
c. ISD ≤ -12 A, dI/dt ≤ 140 A/μs, VDD ≤ VDS, TJ ≤ 175 °C
d. 1.6 mm from case
PRODUCT SUMMARY
VDS (V) -100
RDS(on) (Ω)V
GS = -10 V 0.30
Qg max. (nC) 38
Qgs (nC) 6.8
Qgd (nC) 21
Configuration Single
S
G
D
P-Channel MOSFET
TO-220AB
GD
S
Available
Available
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free IRF9530PbF
Lead (Pb)-free and halogen-free IRF9530PbF-BE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS -100 V
Gate-source voltage VGS ± 20
Continuous drain current VGS at 10 V TC = 25 °C ID
- 12
ATC = 100 °C -8.2
Pulsed drain current a IDM -48
Linear derating factor 0.59 W/°C
Single pulse avalanche energy bEAS 400 mJ
Repetitive avalanche current a IAR -12 A
Repetitive avalanche energy aEAR 8.8 mJ
Maximum power dissipation TC = 25 °C PD88 W
Peak diode recovery dV/dt cdV/dt - 5.5 V/ns
Operating junction and storage temperature range TJ, Tstg -55 to +175 °C
Soldering recommendations (peak temperature) dFor 10 s 300
Mounting torque 6-32 or M3 screw 10 lbf · in
1.1 N · m
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IRF9530
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Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum junction-to-ambient RthJA -62
°C/WCase-to-sink, flat, greased surface RthCS 0.50 -
Maximum junction-to-case (drain) RthJC -1.7
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = -250 μA -100 - - V
VDS temperature coefficient ΔVDS/TJ Reference to 25 °C, ID = -1 mA - -0.10 - V/°C
Gate-source threshold voltage VGS(th) VDS = VGS, ID = -250 μA -2.0 - -4.0 V
Gate-source leakage IGSS V
GS = ± 20 V - - ± 100 nA
Zero gate voltage drain current IDSS
VDS = -100 V, VGS = 0 V - - -100 μA
VDS = -80 V, VGS = 0 V, TJ = 150 °C - - -500
Drain-source on-state resistance RDS(on) V
GS = -10 V ID = -7.2 A b - - 0.30 Ω
Forward transconductance gfs VDS = -50 V, ID = -7.2 A b 3.7 - - S
Dynamic
Input capacitance Ciss VGS = 0 V,
VDS = -25 V,
f = 1.0 MHz, see fig. 5
- 860 -
pFOutput capacitance Coss - 340 -
Reverse transfer capacitance Crss -93-
Total gate charge Qg
VGS = -10 V ID = -12 A, VDS = -80 V,
see fig. 6 and 13 b
--38
nC Gate-source charge Qgs --6.8
Gate-drain charge Qgd --21
Turn-on delay time td(on)
VDD = -50 V, ID = -12 A,
Rg = 12 Ω,RD = 3.9 Ω, see fig. 10 b
-12-
ns
Rise time tr -52-
Turn-off delay time td(off) -31-
Fall time tf -39-
Gate input resistance LD Between lead,
6 mm (0.25") from
package and center of
die contact
-4.5-
nH
Internal drain inductance LS-7.5-
Internal source inductance Rgf = 1 MHz, open drain 0.4 - 3.3 Ω
Drain-Source Body Diode Characteristics
Continuous source-drain diode current ISMOSFET symbol
showing the
integral reverse
p -n junction diode
---12
A
Pulsed diode forward current aISM ---48
Body diode voltage VSD TJ = 25 °C, IS = -12 A, VGS = 0 V b---6.3V
Body diode reverse recovery time trr TJ = 25 °C, IF = -12 A, dI/dt = 100 A/μs b- 120 240 ns
Body diode reverse recovery charge Qrr - 0.46 0.92 μC
Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
D
S
G
S
D
G
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IRF9530
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S21-0852-Rev. D, 16-Aug-2021 3Document Number: 91076
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 -Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, TC = 175 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
91076_01
Bottom
To p
VGS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
20 µs Pulse Width
TC = 25 °C
- 4.5 V
- V
DS
, Drain-to-Source Voltage (V)
- I
D
, Drain Current (A)
100101
101
100
10-1
101
100
100101
- VDS, Drain-to-Source Voltage (V)
- ID, Drain Current (A)
Bottom
To p
VGS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
20 µs Pulse Width
TC = 175 °C
91076_02
- 4.5 V
10-1
20 µs Pulse Width
VDS = - 50 V
101
100
- ID, Drain Current (A)
- VGS, Gate-to-Source Voltage (V)
5678910
4
25 °C
175 °C
91076_03
I
D
= - 12 A
V
GS
= - 10 V
3.0
0.0
0.5
1.0
1.5
2.0
2.5
T
J,
Junction Temperature (°C)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
91076_04
- 60- 40 - 20 0 20 40 60 80 100 120 140 160 180
1800
1500
1200
900
0
300
600
100101
Capacitance (pF)
- VDS, Drain-to-Source Voltage (V)
Ciss
Crss
Coss
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
91076_05
QG, Total Gate Charge (nC)
- VGS, Gate-to-Source Voltage (V)
20
16
12
8
0
4
010 50
40
3020
VDS
= - 20 V
VDS
= - 50 V
For test circuit
see figure 13
VDS
= - 80 V
91076_06
ID = - 12 A
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IRF9530
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S21-0852-Rev. D, 16-Aug-2021 4Document Number: 91076
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10 - Switching Time Test Circuit
Fig. 11 - Switching Time Waveforms
Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
101
100
- V
SD
, Source-to-Drain Voltage (V)
- I
SD
, Reverse Drain Current (A)
1.0 5.0
4.03.02.0
25 °C
175 °C
V
GS
= 0 V
91076_07
10-1
10 µs
100 µs
1 ms
10 ms
Operation in this area limited
by RDS(on)
- VDS, Drain-to-Source Voltage (V)
- ID, Drain Current (A)
TC = 25 °C
TJ = 175 °C
Single Pulse
102
0.1
2
5
0.1
2
5
1
2
5
10
2
5
25
125
10 25
10225103
91076_08
103
150
- ID, Drain Current (A)
TC, Case Temperature (°C)
0
4
6
8
10
12
25
91076_09
1251007550
2
175
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
- 10 V
+
-
V
DS
V
DD
VGS
10 %
90 %
VDS
td(on) trtd(off) tf
10
1
0.1
10-2
10-5 10-4 10-3 10-2 0.1 1 10
PDM
t1
t2
t1, Rectangular Pulse Duration (s)
Thermal Response (ZthJC)
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
Single Pulse
(Thermal Response)
0.2
0.05
0.02
0.01
91076_11
0.1
D = 0.5
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IRF9530
www.vishay.com Vishay Siliconix
S21-0852-Rev. D, 16-Aug-2021 5Document Number: 91076
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 13 - Unclamped Inductive Test Circuit Fig. 14 - Unclamped Inductive Waveforms
Fig. 15 - Maximum Avalanche Energy vs. Drain Current
Fig. 16 - Basic Gate Charge Waveform Fig. 17 - Gate Charge Test Circuit
A
R
G
I
AS
0.01 Ω
t
p
D.U.T
L
V
DS
+
-V
DD
- 10 V
Vary t
p
to obtain
required I
AS
IAS
VDS
VDD
VDS
tp
25 150
125
10075
50
1200
0
200
400
600
800
1000
Starting TJ, Junction Temperature (°C)
EAS, Single Pulse Energy (mJ)
Bottom
To p
ID
- 4.9 A
- 8.5 A
- 12 A
VDD = - 25 V
91076_12c
175
QGS QGD
QG
VG
Charge
- 10 V
D.U.T.
- 3 mA
VGS
VDS
IGID
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
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IRF9530
www.vishay.com Vishay Siliconix
S21-0852-Rev. D, 16-Aug-2021 6Document Number: 91076
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 18 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91076.
P.W. Period
dI/dt
Diode recovery
dV/dt
Body diode forward drop
Body diode forward
current
Driver gate drive
Inductor current
D = P.W.
Period
+
-
-
-
-
+
+
+
Peak Diode Recovery dV/dt Test Circuit
• dV/dt controlled by Rg
• D.U.T. - device under test
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
Rg
• Compliment N-Channel of D.U.T. for driver
VDD
• ISD controlled by duty factor “D”
Note
Note
a. VGS = - 5 V for logic level and - 3 V drive devices
VGS = - 10 Va
D.U.T. lSD waveform
D.U.T. VDS waveform
VDD
Re-applied
voltage
Ripple ≤ 5 % ISD
Reverse
recovery
current
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Package Information
www.vishay.com Vishay Siliconix
Revison: 04-Nov-2021 1Document Number: 66542
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TO-220-1
Note
• M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM
DIM. MILLIMETERS INCHES
MIN. MAX. MIN. MAX.
A 4.24 4.65 0.167 0.183
b 0.69 1.02 0.027 0.040
b(1) 1.14 1.78 0.045 0.070
c 0.36 0.61 0.014 0.024
D 14.33 15.85 0.564 0.624
E 9.96 10.52 0.392 0.414
e 2.41 2.67 0.095 0.105
e(1) 4.88 5.28 0.192 0.208
F 1.14 1.40 0.045 0.055
H(1) 6.10 6.71 0.240 0.264
J(1) 2.41 2.92 0.095 0.115
L 13.36 14.40 0.526 0.567
L(1) 3.33 4.04 0.131 0.159
Ø P 3.53 3.94 0.139 0.155
Q 2.54 3.00 0.100 0.118
ECN: E21-0621-Rev. D, 04-Nov-2021
DWG: 6031
M
*
3
2
1
L
L(1)
D
H(1)
Q
Ø P
A
F
J(1)
b(1)
e(1)
e
E
b
C
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Legal Disclaimer Notice
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Revision: 01-Jan-2023 1Document Number: 91000
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Vishay IRF9530PbF is a P-Channel MOSFET with a maximum drain-source voltage of -100 V, making it suitable for high-voltage applications. It features a low on-resistance of 0.30 Ω, enabling efficient power handling. The device offers fast switching speed, reducing power losses and improving circuit performance. Its ruggedized design makes it reliable for demanding applications. Additionally, it has a wide operating temperature range of -55 °C to 175 °C, ensuring stable operation in various environments.
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