IRF9530
www.vishay.com Vishay Siliconix
S21-0852-Rev. D, 16-Aug-2021 2Document Number: 91076
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum junction-to-ambient RthJA -62
°C/WCase-to-sink, flat, greased surface RthCS 0.50 -
Maximum junction-to-case (drain) RthJC -1.7
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = -250 μA -100 - - V
VDS temperature coefficient ΔVDS/TJ Reference to 25 °C, ID = -1 mA - -0.10 - V/°C
Gate-source threshold voltage VGS(th) VDS = VGS, ID = -250 μA -2.0 - -4.0 V
Gate-source leakage IGSS V
GS = ± 20 V - - ± 100 nA
Zero gate voltage drain current IDSS
VDS = -100 V, VGS = 0 V - - -100 μA
VDS = -80 V, VGS = 0 V, TJ = 150 °C - - -500
Drain-source on-state resistance RDS(on) V
GS = -10 V ID = -7.2 A b - - 0.30 Ω
Forward transconductance gfs VDS = -50 V, ID = -7.2 A b 3.7 - - S
Dynamic
Input capacitance Ciss VGS = 0 V,
VDS = -25 V,
f = 1.0 MHz, see fig. 5
- 860 -
pFOutput capacitance Coss - 340 -
Reverse transfer capacitance Crss -93-
Total gate charge Qg
VGS = -10 V ID = -12 A, VDS = -80 V,
see fig. 6 and 13 b
--38
nC Gate-source charge Qgs --6.8
Gate-drain charge Qgd --21
Turn-on delay time td(on)
VDD = -50 V, ID = -12 A,
Rg = 12 Ω,RD = 3.9 Ω, see fig. 10 b
-12-
ns
Rise time tr -52-
Turn-off delay time td(off) -31-
Fall time tf -39-
Gate input resistance LD Between lead,
6 mm (0.25") from
package and center of
die contact
-4.5-
nH
Internal drain inductance LS-7.5-
Internal source inductance Rgf = 1 MHz, open drain 0.4 - 3.3 Ω
Drain-Source Body Diode Characteristics
Continuous source-drain diode current ISMOSFET symbol
showing the
integral reverse
p -n junction diode
---12
A
Pulsed diode forward current aISM ---48
Body diode voltage VSD TJ = 25 °C, IS = -12 A, VGS = 0 V b---6.3V
Body diode reverse recovery time trr TJ = 25 °C, IF = -12 A, dI/dt = 100 A/μs b- 120 240 ns
Body diode reverse recovery charge Qrr - 0.46 0.92 μC
Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
D
S
G
S
D
G
Downloaded from Arrow.com.Downloaded from Arrow.com.