UG484: Si828x-HB-EVB User’s Guide
The Si828x-HB-EVB (Si828x Half-Bridge EVB) is a versatile plat-
form for demonstrating the features of the Si828x with SiC/IGBT
devices in a half-bridge circuit configuration. The board includes
the Si8285 to drive the high-side switch and an Si8284 to drive the
low-side switch.
The Si8284 has an integrated dc-dc circuit that operates with an external MOSFET and
a transformer to generate two pairs of isolated positive and negative voltages to power
both the Si8285 and the Si8284.
The Si828x-HB-EVB has a “non-overlap” circuit to take PWM signal input from a single-
channel function generator to produce complimentary PWM signals with programable
dead time control to drive the inputs of the Si8285 and Si8284 gate drivers. The input
circuit can also be configured to operate with two channel function generators to drive
the input of the Si8285 and Si8284 directly.
There are terminals on the outputs of the half-bridge power circuit that can be arranged
to support double pulse (switching loss), crosstalk, and Si828x DESAT short circuit pro-
tection tests. Also, the board can be configured to operate with an external inductor (not
included) in half-bridge buck or boost operation for dv/dt and dc-dc efficiency testing.
The board has connections for current and voltage probes to support data collection dur-
ing tests. Operating the board is simple with the assistance of the LED indicators
(RDY, /FLT), current sensor (not included), voltage measurement (BNC, SMA) connec-
tors, and the /FLT reset button.
KEY FEATURES
• Half-bridge demonstration board for SiC/
IGBT
•
Operates up to 1 kV DC-Rail input
• Demonstrates half-bridge operations
(double pulse, buck, boost)
• Demonstrates desaturation protection
• Demonstrates adjustable soft shutdown
capability
• Onboard “non-overlap” circuit to convert
single PWM signal into complementary
signals with independent adjustable
deadtime
• Demonstrates Si8284 integrated dc-dc to
generate all necessary voltages to power
both high- and low-side gate drivers
• Supports IGBT/SiC in TO-247 packages in
standard 3-pin and 4-pin configurations
with Kelvin Source connection
• Supports gate current booster option
silabs.com | Building a more connected world. Rev. 0.1
Table of Contents
1.
Schematics ................................3
2. Si828x-HB-EVB Connections for Testing .....................6
2.1 Input Power ...............................6
2.2 Input Signals...............................6
2.2.1 Single PWM Input ...........................7
2.2.2 Direct PWMs Connection to Si8285 and Si8281 .................7
3. Scope Probe Connections and DESAT Configurations ................8
3.1 Gate, VDS, and Low-Side Current Monitors ....................8
3.2 DESAT Monitor/Disable ...........................8
4. Test Configurations .............................9
4.1 Double Pulse Test .............................9
4.1.1 Double Pulse Test on Low-Side Switching Device.................10
4.1.2 Double Pulse Test on High-Side Switching Device ................10
4.2 Cross Talk Testing.............................10
4.3 DESAT Shorted Circuit Test .........................11
4.3.1 DESAT Shorted Circuit Test on Low-Side Switching Device .............11
4.3.2 DESAT Shorted Circuit Test on High Side Switching Device .............12
4.4 Buck/Boost DCDC Testing ..........................12
4.4.1 Si828x-HB-EVB in Buck DC-DC Operation ...................13
4.4.2 Si828x-HB-EVB in Boost DC-DC Operation ...................13
5. Current Booster Option ..........................14
6. Bill of Materials .............................15
silabs.com | Building a more connected world. Rev. 0.1 | 2
1. Schematics
PWM2
D115
1N4148W
R342
2.2K
GATE1
J114
BNC
J115
BNC
Driv ers _Of f
Function Ge nerator
Prima ry Bias
PWM -
PWM1
JP10
1
2
3
DS AT1
VMID2
C112
10uF
R101
100
TP101
DSAT1
WHITE
TP109
DSAT2
WHITE
/R ST
D114
1N4148W
R406
1M
R407
1M
R130
2.2K
R409
1M
R408
1M
C126
22uF
VDDA
R410
1M
Buc k-Out_Boos t-In
HV_R ail+
DS AT2
GATE2
VMID2
GATE2
TP106
VMID1
WHITE
R339
1K
PWM +
J109
J103
J110
HV_R ail+
Driver 2
Driver2
/F LT
RDY
VDDB2
VDDA
IN +
VDDP
DS AT2
GATE2
VMID2
/R ST
IN -
VDDB1
VSS B1
VMID1
J111
VMID1
Vout
VMID1
J101
GATE1
J112
J113
R333
0
R334
0
Driv ers _Of f
R343
0
C104
0.1uF
Driver1
Driver1
/F LT
RDY
VDDA
IN +
DS AT1
GATE1
VMID1
/R ST
IN -
VSS B1
VDDB1
R113
10K
R344
0
R10510K
Ctrl_Loop
DCDC control
VDDA
PWM -
Buc k-Out_Boos t-In
HV R ail -
VMID2
VDDB2
TP121
PWM+ WHITE
R103
10K
R335
10K
R336
10K
Q1
C3M0016120D
D
G
S
Q2
C3M0016120D
D
G
S
Q3
C3M0016120K
D
G
S
3
Q4
C3M0016120K
D
G
S
3
C118
10µF
C102
10000pF
R325
10.0
R411
1M
R412
1M
C119
10µF
C121
10µF
R413
1M
VDDB2
Buc k-Out_Boos t-In
VDDA
R337
0
R338
0
RST/
VDDA
PWM -
VDDA
L101
10uH
J105
HV R ail -
J106
C113
270pF
C101
0.1uF
R114
10K
TP105
GND_PRI
BLACK
C111
270pF
TP120
GND_SECBLUE
TP107
WHITE
TP113
GND_PRI
BLACK
VMID2
HV R ail -
TP102
Rail Voltage
WHITE
D104
D110
TO-247/264
HEAT SINK
U4
TO-247/TO-264_HEATSINK
2
1
D105
RED
D111
RED
R120
2.2K
TP114
BLUE
J108
TP108
COMP
WHITE
J107
VDDP
TP104
GND_PRI
BLACK
B101
nonoverlap_gen
VOA
VOB
VDDA
PWM +
PWM -
J102
1
2
3
C103
0.1uF
TP118
GND_PRI
BLACK
TP119
GND_SECBLUE
TP112
VMID2
WHITE
R108
10K
R106
2.2K
R111
100
TP117
GND_PRI
BLACK
TP116
GND_PRI
BLACK
S101
MOMENTARY
C105
0.1uF
R119
2.2K
R107
2.2K
IDS Curre nt
Sens e
VDDP
TP115
BLUE
C180
10uF
VDDA
HV_R ail+
VDDB2
D101
US1K
D102
US1K
D107
US1K
D108
US1K
JP9
1
2
3
TP111
CTRL_RAMP
WHITE
Ga te Drv 2
Ga te Drv 1
R424
10
Figure 1.1. Si828x-HB- EVB Half-Bridge Circuit
UG484: Si828x-HB-EVB User’s Guide
Schematics
silabs.com | Building a more connected world. Rev. 0.1 | 3
C312
10uF
TP309
GATE2
T1
UTB02286S
16
11
14
9
8
7
6
3
1
2
R330
1.0
R319
150K
R317
8.66K
C311
0.1uF
C314
0.1uF
C315
10uF
R320
200K
R323
4.02
VDDA
C313
470pF
C306
10uF
C309
10uF
C307
0.1uF
C310
0.1uF
VMID2
TP305
VSNS2
TP308
COMP2
TP306
VSSBx
TP307
VDDBx
VH
VL
VDDB2
RDY
/FLT
VDDP
IN +
VDDA
VMID2
GATE2
DSAT2
/RST
C319
0.1uF
C316
0.1uF
R313
1.0
C320
2.2uF
D305
24V
R311
0.1
C318
TP304
VMID2
VDDB2
IS307
R321
0.1
IS304
I_VDDPx
IN -
C321
10pF
C322
10pF
R331
1.0
ISOLATION
U301
Si8281CD-IS
VDDA
4
VH
15
CLMP
13
VSW
2
GNDP
1
NC
18
VDDP
3
DSAT
17
VSNS
20
/RST
6
/FLT
7
VDDB
16
GNDA
5
RDY
8
COMP
19
VL
14
IN+
9
IN-
10
VMID
12
VSSB
11
C308
10uF
VSSB2
R332
1.0
VSSB1
D310
MBR0580S1
D306
MBR0580S1
D309
MBR0580S1
D302
MBR0580S1
VDDB_IC1
D303
24V
R327
100
R328
100
CLMP2
VMID2
VSSB
VMID2
C301
10uF
C302
0.1uF
C304
0.1uF
C303
10uF
VMID1
D311
R345
100
Q6
TP301
VDDB1
R346
30
TP302
VMID1
TP303
VSSB2
VSSB2
R301
1.0
C317
2.2uF
R306
1.0
IS308
R324
1.0
Figure 1.2. Low-Side Si8284 Gate Driver (Driver 2) with Integrated DC-DC
CLMP
VMID
VSSB
TP201
VSNSx
C202
0.1uF
C201
10uF
R204
1.0
R203
4.02
VDDA
VL
ISOLATION
U201
Si8285CD-A-IS
/RST
4
CLMP
11
VSSB
9
VDDA
2
GNDA
1
VDDB
14
NC
3
VH
13
NC
16
RDY
6
IN+
7
VL
12
/FLT
5
IN-
8
DSAT
15
VMID
10
VH
VDDB1
RDY
/FLT
IN +
VDDA
VMID1
GATE1
DSAT1
/RST
VSSB
C207
0.1uF
C203
0.1uF
Add Rx05 to ground VSSB
VDDB1
IS201
R201
0.1
VMID
IN -
C212
10pF
R208
100
R202
4.7K
R207
100
VSSB1
R205
0
CLMP
C211
0.1uF
C205
C204
2.2uF
C208
2.2uF
R210
100
D201
MBR1H100SF
Q5
IS202
R211
30
Figure 1.3. High-Side Si8285 Gate Driver (Driver 1)
UG484: Si828x-HB-EVB User’s Guide
Schematics
silabs.com | Building a more connected world. Rev. 0.1 | 4
VOB
VOA
PWM +
C40
1nF
C42
1nF
U9B
CD74AC04M
3 4
JP47
HEADER 1x3
1
2
3
VDDA
PWM -
VDDA
U9C
CD74AC04M
56
U9D
CD74AC04M
98
U9E
CD74AC04M
1110
U9F
CD74AC04M
1312
VDDA
U9A
CD74AC04M
1 2
14
7
VDDA
R45
2K
1 3
2
R46
2K
1 3
2
C41
0.1uF
C39
0.1uF
JP4 Selections
External Function Generator 1-2
Onboard Controller 2-3
Idle No connect
GND
U8A
SN74HC00DR
1
2
3
147
U8B
SN74HC00DR
2A
4
2B
5
2Y
6
U8C
SN74HC00DR
3A
9
3B
10
3Y
8
U8D
SN74HC00DR
4A
12
4B
13
4Y
11
R47
10K
VDDA
Figure 1.4. Non-Overlap Dead Time Generator Circuit
HV R ail -
Buc k-Out_Boos t-In
PWM -
VDDA
VDDB2
VMID2
C116
2200pF
C122
22nF
U108
PS2911
C124
22nF
C123
4.7uF
R404
330K
R126
221K
R127
1K
R124
3.16K
R128
499
D113
0.49V
R125
249K
VDDA
VMID2
C125
1uF
R115
22K
U107
LT4430
Vin
1
GND
2
OC
3
FB
4
COMP
5
OP TO
6
Buc k-Out_Boos t-In
C127
4.7uF
R403
2K
1 3
2
TP123
WHITE
TP122
WHITE
TP124
WHITE
C216
0.047uF
TP113
GND_PRI
BLACK
VMID2
C115
0.1uF
C209
10pF
U106
TPS40200
RC
SS
COMP
FB GND
GDRV
ISNS
VDD
R116
33K
R118
1K
R405
1M
R341
10K
VDDA
TP111
PWM -
WHITE
C210
10000pF
Figure 1.5. Control Loop for Buck Converter (Not Installed)
UG484: Si828x-HB-EVB User’s Guide
Schematics
silabs.com | Building a more connected world. Rev. 0.1 | 5
2. Si828x-HB-EVB Connections for Testing
Figure 2.1. Si828x-HB-EVB Input Power and Input Signals
DANGER! This board may contain high voltages of up to 1000 V.
Do not touch the board after the high-voltage section has been energized!
2.1 Input Power
The
Si828x-HB-EVB is powered by applying VDDP = 5 V (± 10%) to pin 3 (+) and Pin 2 (–) of the J102 connector. The Si8281 with
integrated dc-dc generates voltages to power both the Si8281 and Si8285 gate drivers. The RDY green LEDs (D104, D110) are lit
when proper VDDA, VDDBs, and VSSBs (VSSB is a negative voltage polarity) are present. There are test points to check the VDDB
and VSSB voltage levels (reference to VMID). The VDDB and VSSB voltage levels can be adjusted by selecting the R319 and R317
values.
V
DDB - VSSB = 1.05 ×
(
R319
R317
+ 1
)
The ratio between VDDB and VSSB voltages is determined by the T1 transformer turns ratio between the two secondary windings (see
UMEC UTB02286S transformer data sheet for details).
V
DDB = (VDDB - VSSB) ×
W
7-8
W
7
-8
+ W
6-7
2.2 Input Signals
The Si828x-HB-EVB has flexible PWM input signal connections to support all testing configurations.
UG484: Si828x-HB-EVB User’s Guide
Si828x-HB-EVB Connections for Testing
silabs.com | Building a more connected world. Rev. 0.1 | 6
2.2.1 Single PWM Input
J103
(SMA) provides connection for single PWM input to drive both Si8285 and Si8281. The onboard nonoverlapped circuit comprises
of U8 and U9 generates complimentary PWM signals to drive Si8281 and Si8285. The potentiometers R45 and R46 provide dead time
adjustment controls (both pots are set for 170 ns dead time at the factory). Below are connections for J47, J9 and J10 to support single
PWM input operation (as shown in Figure 2.1 Si828x-HB-EVB Input Power and Input Signals on page 6).
• J103 (SMA): Input PWM signal
• J47: pin 1 to pin 2
• J9: pin 1 to pin 2
• J10: pin 1 to pin 2
2.2.2 Direct PWMs Connection to Si8285 and Si8281
SMA connectors J109 and J110 provide PWM input connections to the IN+ of the Si8285 (high-side gate driver) and Si8281 (low-side
gate driver), respectively. Dual channel function generator with proper setting (dead time...) should be used to drive both gate drivers
simultaneously. The J9 and J10 connections to support direct PWMs connections to J109 and J110 are listed below:
• J109 (SMA): Si8285 IN+
• J110 (SMA): Si8281 IN+
• J9: Pin 2 to Pin 3
• J10: Pin 2 to Pin 3
It is also possible to drive one gate driver directly from the function generator while keeping the second gate driver in the off state by
placing a jumper on J9 or J10 to keep the IN+ at the logical low level. The J9 and J10 jumper connections to connect the IN+ signal to
GND are listed below:
• J9: Pin 2 to Pin 1 (high-side SI8285 driver)
• J10: Pin 2 to Pin 1 (low-side Si8281 driver)
UG484: Si828x-HB-EVB User’s Guide
Si828x-HB-EVB Connections for Testing
silabs.com | Building a more connected world. Rev. 0.1 | 7
3. Scope Probe Connections and DESAT Configurations
Figure 3.1. Si828x-HB- EVB Scope Probe and DESAT Connections
3.1 Gate, VDS, and Low-Side Current Monitors
The Si828x-HB-EVB has the following connections to support voltage and current measurements
•
J107 (SMA), top-side Si8285 gate (bottom mounted, requires isolated probe)
• J108 (SMA), low-side Si8281 gate (bottom mounted)
• J115, high-side VDS (bottom mounted BNC, requires isolated probe)
• J114, low-side VDS (bottom mounted BNC)
• J111, low-side Isense; recommending T&M Research (0.005V/A) SDN-005 BNC (not included)
3.2 DESAT Monitor/Disable
The two pin headers IS202 and IS308 are used to provide scope probe connections for DESAT monitors or for DESAT disable control
• IS202 top-side Si8285 DESAT: Pin 1: DESAT1, Pin 2: VMID1; DESAT1 is disabled when Pin 1 is shorted to Pin 2
• IS308 low-side Si8281 DESAT: Pin 1: DESAT2, Pin 2: VMID2; DESAT2 is disabled when Pin 1 is shorted to Pin 2
UG484: Si828x-HB-EVB User’s Guide
Scope Probe Connections and DESAT Configurations
silabs.com | Building a more connected world. Rev. 0.1 | 8
4. Test Configurations
The Si828x-HB-EVB has configurable connections to support most half-bridge performance tests for both top and bottom switching de-
vices.
4.1 Double Pulse Test
The Si828x-HB-EVB can be configurated to evaluate the power switching devices in half bridge double pulse test at different current
levels. By adjusting the switching on time and the time between the PWM pulses, the Device Under Test (DUT) can be controlled and
measured over the full range of operating conditions. In this test, the PWM signal is injected directly to the IN+ of the first gate driver to
operate its switching device while the IN+ of the second gate driver is shorted to GND to keep its switching device in the off state. The
body diode of the off state switching device works in conjunction with the active switching device to provide realistic switching charac-
teristics of the half bridge circuit.
Figure 4.1. Si828x-HB- EVB Connections for Double Pulse Test
UG484: Si828x-HB-EVB User’s Guide
Test Configurations
silabs.com | Building a more connected world. Rev. 0.1 | 9
4.1.1 Double Pulse Test on Low-Side Switching Device
Figure
4.1 Si828x-HB- EVB Connections for Double Pulse Test on page 9 provides connections for the double pulse test for the low-
side switching device.
Gate driver power:
• Connect 5 V to J102.
DC-Rail input:
• Connect DC-Rail voltage between J101–J106.
• Connect J113 to J101 to increase the DC-Rail bypass cap from 10 µF to 20 µF.
PWM input signal:
• Connect PWM input to J110 SMA connector.
• JP9: Jumper between Pin 2–3 to short Si8285 IN+ to GND.
• JP10: No jumper.
Inductor:
Connect inductor (air core preferred) with appropriate value from 25 µH to 75 µH between J101–J112 (keep the inductor at least two
feet away from Si828x-HB-EVB and test instrumentation to avoid interferences).
Oscilloscope connections:
Figure 4.1 Si828x-HB- EVB Connections for Double Pulse Test on page 9 shows probe scope connections for this test. Also, see
3.1 Gate, VDS, and Low-Side Current Monitors for a list of scope probe connections for voltage and current measurements.
4.1.2 Double Pulse Test on High-Side Switching Device
Connections for double pulse test on high-side switching device are similar to the connections for testing the low-side switching device
(as described in 4.1.1 Double Pulse Test on Low-Side Switching Device) except for the following connections:
PWM input signal:
• Connect PWM input to J109 SMA connector.
• JP9: No jumper.
• JP10: Jumper between Pins 2–3 to short Si8281 IN+ to GND.
Inductor:
Connect inductor (air core preferred) with appropriate value between J112–J106 (keep the inductor at least two feet away from Si828x-
HB-EVB and test instrumentation to avoid interference).
4.2 Cross Talk Testing
Data for the crosstalk test can be collected during the double pulse test described in 4.1 Double Pulse Test. Crosstalk data is the volt-
age spike on the gate of the off-state device (J107 or J108) during switching operations. This voltage spike provides information on how
the gate driver copes with the dv/dt induced Miller current during switching operation.
UG484: Si828x-HB-EVB User’s Guide
Test Configurations
silabs.com | Building a more connected world. Rev. 0.1 | 10
4.3 DESAT Shorted Circuit Test
The
Si828x-HB-EVB has connections to support DESAT shorted circuit test on either the low-side or high-side switching device. During
test, a PWM signal is injected directly to the IN+ of the low-side or high-side switching device (the first device) while a short connection
is placed across the D-S terminals of the second device. When a PWM signal turns on the first switching device, there is a large shoot-
through current originated from the + terminal of the DC-Rail across the first switching device and the short on the second device to-
ward the negative terminal of the DC-Rail. The DESAT circuit of the gate driver must work effectively to protect the first switching device
from this short condition. DESAT detection response time is adjustable through the value of the R130 and R342 resistors while soft
shutdown speed is adjustable through the value of the R211 and R346 resistors (manufactory default resistor value is 30 Ω). See
"AN1288: Si828x External Enhancement Circuits" for more details.
Figure 4.2. Si828x-HB- EVB Probe Connections DESAT Shorted Circuit Test
4.3.1 DESAT Shorted Circuit Test on Low-Side Switching Device
4.3 DESAT Shorted Circuit Test provides connections for the double pulse test for the low-side switching device.
Gate driver power:
•
Connect 5 V to J102.
DC-Rail:
• Connect DC-Rail voltage between J101–J106.
• Screw bus wire between J101, J112 and J113 to increase the DC-Rail bypass cap from 10 µF to 20 µF and to place short on the
high-side switching device.
PWM input signal:
• Connect PWM input to J110 SMA connector.
• JP9: place jumper between Pins 2–3 to short Si8285 IN+ to GND.
• JP10: no jumper.
Oscilloscope connections: 4.3 DESAT Shorted Circuit Test shows probe scope connections for this test. See 3.1 Gate, VDS, and Low-
Side Current Monitors for a list of probe scope connections for voltage and current measurements.
UG484: Si828x-HB-EVB User’s Guide
Test Configurations
silabs.com | Building a more connected world. Rev. 0.1 | 11
4.3.2 DESAT Shorted Circuit Test on High Side Switching Device
Connections
for DESAT test on high side switching device are similar to the connections for testing the low side switching device (as
described in 4.3.1 DESAT Shorted Circuit Test on Low-Side Switching Device) except for the following connections:
DC-Rail:
• Connect DC-Rail voltage between J101–J106.
• Screw bus wire between J101, J113 to increase the DC-Rail bypass cap from 10 µF to 20 µF.
• Solder a wire across the D-S terminals of the low-side switching device as indicated by Item #9 of Figure 4.2 Si828x-HB- EVB Probe
Connections DESAT Shorted Circuit Test on page 11.
PWM input signal:
• Connect PWM input to J109 SMA connector.
• JP9: No jumper.
• JP10: Jumper between Pins 2–3 to short Si8281 IN+ to GND.
4.4 Buck/Boost DCDC Testing
The Si828x-HB-EVB can be configured to operate with an external inductor in dc-dc buck or boost operation. The two bulk filter capaci-
tors, C118 and C119, can operate as input or output caps depending on whether a buck or boost configuration is used. The rating of
the external inductor must be properly selected to support the operating voltages, output loading, and switching frequency. When oper-
ating at high output power, a heat sink with proper insulation and clip must be installed to dissipate heat from the two switching devices.
Air flow may be required on the heat sink for very-high-power operation.
Figure 4.3. Si828x-HB-EVB Buck/Boost DC-DC Operation
UG484: Si828x-HB-EVB User’s Guide
Test Configurations
silabs.com | Building a more connected world. Rev. 0.1 | 12
4.4.1 Si828x-HB-EVB in Buck DC-DC Operation
Figure
4.3 Si828x-HB-EVB Buck/Boost DC-DC Operation on page 12 shows the connections for operating the Si828x-HB-EVB in buck
mode.
Gate driver power: Connect 5 V to J102.
Inductor: Connect inductor between J112–J113.
DC-Rail input DC1: connect DC-Rail voltage between J101-J106
DC output, DC2: buck mode dc output
PWM input signal: see 2.2.1 Single PWM Input and 2.2.2 Direct PWMs Connection to Si8285 and Si8281 for two methods of connect-
ing PWM signal to the Si828x-HB-EVB. Asynchronous and synchronous buck operation are possible by using proper PWM signals
combines with the jumper setting on JP9 and JP10
Oscilloscope connections: Figure 4.3 Si828x-HB-EVB Buck/Boost DC-DC Operation on page 12 shows scope probe connections for
this test. Also, see 3.1 Gate, VDS, and Low-Side Current Monitors for a list of probe scope connections for voltage and current meas-
urements.
4.4.2 Si828x-HB-EVB in Boost DC-DC Operation
The connections for the Si828x-HB-EVB to operate in boost mode operation is the same as connection for the buck mode operation
(see 4.4.1 Si828x-HB-EVB in Buck DC-DC Operation). The only difference is the swapping of the dc input and dc output connection as
shown below:
DC-Rail input DC2: connect DC-Rail voltage between J101–J106
DC output, DC1: boost mode dc output
UG484: Si828x-HB-EVB User’s Guide
Test Configurations
silabs.com | Building a more connected world. Rev. 0.1 | 13
5. Current Booster Option
The Si828x-HB-EVB has VH, VL, MCLP, VMID, VDDB, and VSSB test points that can be connected to an external current booster
daughter card. The gate resistors can be removed to insert the current booster circuit between the gate driver and the SiC. This option
increases the current drive capability of the gate driver to more than 15 A. This circuit is optional and available on request. See
"AN1288: Si828x External Enhancement Circuits" for more information on the Si828x current booster circuit.
RSS
4.02
TPV?
VMID
VDDB
VH
VL
M_CLMP
VSSB
GATE
Q3
ZXTP2027FTA
D1
RB160MM-30TF
D2
1N4148W
RB4
100
R1
10
R2
20
Q1
ZXTN2010ZTA
Q2
ZXTP2012ZTA
CP
CN
RB3 100
B
Thick Traces
RH
3.0
RL
3.0
VSSB
VDDB
C1
10uF
C2
0.1uF
C5
10uF
C6
0.1uF
C3
10uF
C4
0.1uF
D3
1N4148W
Q4
ZXTP2027FTA
Figure 5.1. Current Booster Circuit
UG484: Si828x-HB-EVB User’s Guide
Current Booster Option
silabs.com | Building a more connected world. Rev. 0.1 | 14
6. Bill of Materials
Table 6.1. Si828x-HB-EVB Bill Of Materials
Reference Description Manufacturer
Manufacturer
Part Number
C39, C41, C203, C207, C302,
C304, C307, C310, C316, C319
Capacitor, 0.1 µF, 25 V, ±20%,
X7R, 0603
Venkel C0603X7R250-104M
C40, C42
Capacitor, 1 nF, 100 V, ±10%,
X7R, 0603
Venkel C0603X7R101-102K
C101, C103, C104, C105
Capacitor, 0.1 µF, 1000 V,
±10%, X7R, 1825
AVX 1825AC104KAT1A
C111, C113
Capacitor, 270 pF, 50 V, ±10%,
X7R, 0603
Kemet C0603C271K5RACTU
C112, C180
Capacitor, 10 µF, 50 V, ±20%,
X7R, 1210
Venkel C1210X7R500-106M
C118, C119, C121
Capacitor, 10 µF, 1000 V, ±5%,
PolyFilm, PTH
Vishay MKP1848S61010JY2B
C126
Capacitor, 22 µF, 25 V, ±10%,
X7R, 1210
Venkel C1210X7R250-226M
C201, C308, C315
Capacitor, 10 µF, 10 V, ±20%,
X7R, 1206
Venkel C1206X7R100-106M
C202, C211, C311, C314
Capacitor, 0.1 µF, 10 V, ±10%,
X7R, 0402
Venkel C0402X7R100-104K
C204, C208, C317, C320
Capacitor, 2.2 µF, 25 V, ±20%,
X7R, 0805
Venkel C0805X7R250-225M
C205, C318
Capacitor, 1 nF, 100 V, ±10%,
X7R, 0603
Venkel C0603X7R101-102K
C212, C321, C322
Capacitor, 10 pF, 50 V, ±0.5 pF,
C0G, 0603
Venkel C0603C0G500-100D
C301, C303, C306, C309, C312
Capacitor, 10 µF, 25 V, ±20%,
X7R, 1210
Venkel C1210X7R250-106M
C313
Capacitor, 470 pF, 200 V,
±20%, X7R, 0805
Venkel C0805X7R201-471M
D101, D102, D107, D108
Diode, Switch, Ultra Fast, 800
V, 1.0 A, SMA
Diodes Inc. US1K-13-F
D104, D110 LED, Green, 0805 Lite-On Inc. LTST-C170GKT
D105, D111
LED, Red, 631 nM, 30 mA, 2 V,
54 mcd, 0805
Lite-On Tech LTST-C170KRKT
D114, D115
Diode, Fast, 100 V, 2 A,
SOD123
Diodes Inc. 1N4148W
D201, D311
Diode, Schottky, 100V, 1A,
SOD123
On Semi MBR1H100SF
D302, D306, D309, D310
Diode, Schottky, 80 V, 500 mA,
SOD123
Diodes Inc. MBR0580S1
D303, D305
Diode, Zener, 24 V, 1000 mW,
SMA
Diodes Inc. SMAZ24-13-F
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Bill of Materials
silabs.com | Building a more connected world. Rev. 0.1 | 15
Reference Description Manufacturer
Manufacturer
Part Number
IS201, IS202, IS304, IS307,
IS308
Header, 2x1, 0.1in pitch, Tin
Plated
Samtec TSW-102-07-T-S
JP9, JP10, JP47
Header, 3x1, 0.1in pitch, Tin
Plated
Samtec TSW-103-07-T-S
J101, J105, J106, J112, J113
CONN, Term Screw, 10-32,
PTH
Keystone Electronics 8174
J102
CONN, Term Block 3POS, 5.08
mm, RT PCB
Phoenix Contact 1729131
J103, J109, J110
CONN, SMA 50 Ω, Straight,
PTH
Johnson Components 142-0701-201
J107, J108
CONN SMA Jack R/A 50 Ω
SMD
Amphenol RF 132136-12
J114, J115
CONN, BNC, Test Lead, 4in.
Leads , PTH
Mueller Electric Co. BU-5200-A-4-0
L101 Inductor, 1210 TDK NLCV32T-100K-PF
PCB1
PCB, Bare Board, Si8281-
HPWR-ENG REV 1.0
Silicon Labs SI828XTE_SIC-HV PCB
Q1, Q2
SiC, 1200 V, 115 A, 16 mΩ,
TO-247 3-pin
CREE C3M0016120D
Q3, Q4
SiC, 1200 V, 115 A, 16 mΩ,
TO-247 4-pin
CREE C3M0016120K
Q5, Q6
Transistor, PNP, –60 V, 600
mA, SOT23
NXP Semiconductors PMBT2907A
R45, R46
Trim pot, 2 kΩ, 1T, Top ADJ,
SMD
Murata PVG3A202C01R00
R47, R108, R114
Resistor, 10 kΩ, 1/16W, ±5%,
Thick Film, 0402
Venkel CR0402-16W-103J
R101, R111
Resistor, 100 Ω, 1/10W, ±1%,
Thick Film, 0805
Venkel CR0805-10W-1000F
R103, R105, R113
Resistor, 10 kΩ, 1/8 W, ±1%,
Thick Film, 0805
Venkel CR0805-8W-1002F
R106, R107, R119, R120
Resistor, 2.2 kΩ, 1/10 W, ±5%,
Thick Film, 0805
Venkel CR0805-10W-222J
R130, R342
Resistor, 2.2 kΩ, 1/10 W, ±1%,
Thick Film, 0603
Yageo RC0603FR-072K2L
R201, R311, R321
Resistor, 0.1 Ω, 1/2 W, ±1%,
Thick Film, 1210
Venkel LCR1210-R100F
R202
Resistor, 4.7 kΩ, 1/10 W, ±1%,
Thick Film, 0603
Venkel CR0603-10W-4701F
R203, R323
Resistor, 4.02 Ω, 1/4 W, ±1%,
Thick Film, 1206
Venkel CR1206-4W-4R02F
R204, R324
Resistor, 1.0 Ω, 1/4 W, ±1%,
Thick Film, 1206
Venkel CR1206-4W-1R00F
R205
Resistor, 0 Ω, 2 A, Thick Film,
0805
Venkel CR0805-10W-000
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Bill of Materials
silabs.com | Building a more connected world. Rev. 0.1 | 16
Reference Description Manufacturer
Manufacturer
Part Number
R207, R208, R327, R328
Resistor, 100 Ω, 1/10 W, ±1%,
Thick Film, 0603
Venkel CR0603-10W-1000F
R210, R345
Resistor, 100 Ω, 1/16 W, ±1%,
Thick Film, 0603
Venkel CR0603-16W-1000F
R211, R346
Resistor, 30 Ω, 1/8 W, ±1%,
Thick Film, 0805
Yageo RC0805FR-0730RL
R301, R306, R313, R330,
R331, R332
Resistor, 1.0 kΩ, 1/4 W, ±5%,
Thick Film, 1206
Venkel CR1206-4W-1R0J
R317
Resistor, 8.66 kΩ, 1/16 W, ±1%,
Thick Film, 0603
Venkel CR0603-16W-8661F
R319
Resistor, 150 kΩ, 1/10 W, ±1%,
Thick Film, 0603
Panasonic ERJ-3EKF1503V
R320
Resistor, 200 kΩ, 1/10 W, ±1%,
Thick Film, 0805
Venkel CR0805-10W-2003F
R325
Resistor, 10.0 Ω, 2 W, ±1%,
Thick Film, 2512
Venkel CR2512-2W-10R0FT-W
R333, R334, R337, R338,
R343, R344
Resistor, 0 Ω, 4 A, Thick Film,
1210
Venkel CR1210-4W-000
R335, R336
Resistor, 10 kΩ, 1/16 W, ±1%,
Thick Film, 0603
Venkel CR0603-16W-1002F
R339
Resistor, 1 kΩ, 1/10 W, ±1%,
Thick Film, 0805
Venkel CR0805-10W-1001F
R406, R407, R408, R409,
R410, R411, R412, R413
Resistor, 1 MΩ, 1/8 W, ±1%,
Thick Film, 1206
Venkel CR1206-8W-1004F
R424
Resistor, 249 kΩ, 1/4 W, ±0.1%,
ThinFilm, 1206
Panasonic ERA-8AEB2493V
S101
Switch, PB, NO, Momentary, 6
mm, PTH
Panasonic EVQ-PAD04M
TP101, TP102, TP106, TP107,
TP108, TP109, TP111, TP112,
TP121, TP201, TP202, TP203,
TP204, TP205, TP206, TP301,
TP302, TP303, TP304, TP305,
TP306, TP307, TP308, TP309,
TP310, TP311, TP312, TP313,
TP314
Testpoint, White, PTH Kobiconn 151-201-RC
TP104, TP105, TP113, TP116,
TP117, TP118
Testpoint, Black, PTH Kobiconn 151-203-RC
TP114, TP115, TP119, TP120 Testpoint, Blue, PTH Kobiconn 151-205-RC
T1
Transformer, 1.5 µH, 10%,
3750VAC ISOL.
UMEC UTB02286S
U4 Heatsink, TO-247, Aluminum Ohmite C40-058-VE
U8 IC, NAND, Quad, 2 Input, SO14 TI SN74HC00DR
U9 IC, Inverter, Hex, SO14 TI CD74AC04M
U201
IC, 4 Amp Isodriver, 12 V UV-
LO, 5 kV, SOW16
Silicon Labs Si8285CD-A-IS
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Bill of Materials
silabs.com | Building a more connected world. Rev. 0.1 | 17
Reference Description Manufacturer
Manufacturer
Part Number
U301
IC, 4 A Isodriver with Isovolt,
SO20 WB
Silicon Labs Si8281CD-IS
J114, J115
CONN, BNC, Test Lead, 4 in.
Leads , PTH
Mueller Electric Co. BU-5200-A-4-0
Not Installed Components
J111
CONN, Jack BNC VERT 10 mΩ
current sense
T&M Research SDN-414-01
C102, C210
Capacitor, 10000 pF, 1000 V,
±10%, X7R, 1825
AVX 1825AC103KAT1A
C115
Capacitor, 0.1 µF, 25 V, ±10%,
X7R, 0603
Venkel C0603X7R250-104K
C116
Capacitor, 2200 pF, 50 V,
±10%, X7R, 0402
Venkel C0402X7R500-222K
C122, C124
Capacitor, 22 nF, 25 V, ±5%,
C0G, 0805
Venkel C0805C0G250-223J
C123, C127
Capacitor, 4.7 µF, 16 V, ±10%,
X5R, 0805
Venkel C0805X5R160-475K
C125
Capacitor, 1 µF, 50 V, ±1%,
C0G, 0805
Venkel C0805C0G500-105F
C209
Capacitor, 10 pF, 50 V, ±0.5 pF,
C0G, 0603
Venkel C0603C0G500-100D
C216
Capacitor, 0.047 µF, 100V,
±10%, X7R, 0805
Venkel C0805X7R101-473K
D113
Diode, Schottky, 40 V, 1.0 A,
SOD123
ST Semiconductor STPS140Z
R115
Resistor, 22 kΩ, 1/8 W, ±1%,
Thick Film, 0805
TE Connec. CRGCQ0805F22K
R116
Resistor, 33 kΩ, 1/16 W, ±1%,
Thick Film, 0603
Venkel CR0603-16W-3302F
R118
Resistor, 1K, 1/8W, ±1%, Thick
Film, 0805
Venkel CR0805-8W-1001F
R124
Resistor, 3.16 kΩ, 1/8 W,
±0.1%, ThinFilm, 0805
Panasonic ERA-6AEB3161V
R125
Resistor, 249 kΩ, 1/10 W, ±1%,
Thick Film, 0603
Panasonic ERJ-3EKF2493V
R126
Resistor, 221 kΩ, ¼ W, ±1%,
Thick Film, 1206
Yageo RC1206FR-07221KL
R127
Resistor, 1 kΩ, 1/10 W, ±1%,
Thick Film, 0805
Venkel CR0805-10W-1001F
R128
Resistor, 499 Ω, 1/4W, ±1%,
ThinFilm, 0805
Stackpole Elec. RNCP0805FTD499R
R341
Resistor, 10 kΩ, 1/16 W, ±1%,
Thick Film, 0603
Venkel CR0603-16W-1002F
R403
Trim pot, 2 K, 1T, Top ADJ,
SMD
Murata PVG3A202C01R00
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Bill of Materials
silabs.com | Building a more connected world. Rev. 0.1 | 18
Reference Description Manufacturer
Manufacturer
Part Number
R404
Resistor, 330K, 1/8W, ±1%,
Thick Film, 0805
TE Connec. CRGCQ0805F330K
R405
Resistor, 1M, 1/8W, ±1%, Thick
Film, 1206
Venkel CR1206-8W-1004F
TP111, TP122, TP123, TP124 Testpoint, White, PTH Kobiconn 151-201-RC
TP113 Testpoint, Black, PTH Kobiconn 151-203-RC
U106
Voltage Mode Controller, 8-Pin
SOIC
TI TPS40200
U107
LT4430, Opto-Coupler Driver,
3V-20V
Linear T/AD LT4430ES6#TRMPBF
U108 Photocoupler, 4-Pin Ultra Small CEL PS2911-1
Table 6.2. Si828x Current Booster Circuit Bill of Materials
Reference Description Manufacturer
Manufacturer
Part Number
C1, C3, C5
Capacitor, 10 µF, 50 V, ±20%,
X7R, 1210
Venkel C1210X7R500-106M
C2, C4, C6
Capacitor, 0.1 µF, 50 V, ±10%,
X7R, 0603
Yageo CC0603KPX7R9BB104
D1
Diode, Schottky, 30 V, 1 A,
SOD123
Rohm RB160MM-30TF
D2, D3
Diode, Fast, 100 V, 2 A,
SOD123
Diodes Inc. 1N4148W
Q1
Transistor, NPN, 60 V, 5 A, LO
SAT, SOT89
Diodes Inc. ZXTN2010Z
Q2
Transistor, PNP, –60 V, –4.3A,
SOT89
Zetex ZXTP2012Z
Q3, Q4
Transistor, PNP, –60 V, –4 A,
SOT23
Diodes Inc. ZXTP2027FTA
RB3, RB4
Resistor, 100 Ω, 1/10 W, ±1%,
Thick Film, 0805
Venkel CR0805-10W-1000F
RL,RH
Resistor, 3.0 Ω, 1 W, ±1%,
Thick Film, 2010
Vishay CRCW20103R00FKEFHP
RSS
Resistor, 4.02 Ω, 1/4 W, ±1%,
ThickFilm, 1206
Venkel CR1206-4W-4R02F
R1
Resistor, 10 Ω, 1/4 W, ±1%,
Thick Film, 1206
Venkel CR1206-4W-10R0F
R2
Resistor, 20 Ω, 1/4 W, ±1%,
Thick Film, 1206
Venkel CR1206-4W-20R0FT
UG484: Si828x-HB-EVB User’s Guide
Bill of Materials
silabs.com | Building a more connected world. Rev. 0.1 | 19
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