Panasonic 2SB1218A User manual

Panasonic
Brand
Panasonic
Model
2SB1218A
Category
Network switches
Type
User manual

This manual is also suitable for

Panasonic 2SB1218A

Panasonic 2SB1218A is a silicon PNP epitaxial planar type transistor designed for general amplification applications. It is complementary to 2SD1819A. The 2SB1218A features a high forward current transfer ratio (hFE) and is packaged in a compact S-Mini type package, allowing for downsizing of equipment and automatic insertion through tape and magazine packing.

The device has an absolute maximum rating collector-base voltage of -45V, collector-emitter voltage of -45V, emitter-base voltage of -7V, collector current of -100mA, peak collector current of -200mA, collector power dissipation of 150mW, and junction temperature of 150°C.

Panasonic 2SB1218A

Panasonic 2SB1218A is a silicon PNP epitaxial planar type transistor designed for general amplification applications. It is complementary to 2SD1819A. The 2SB1218A features a high forward current transfer ratio (hFE) and is packaged in a compact S-Mini type package, allowing for downsizing of equipment and automatic insertion through tape and magazine packing.

The device has an absolute maximum rating collector-base voltage of -45V, collector-emitter voltage of -45V, emitter-base voltage of -7V, collector current of -100mA, peak collector current of -200mA, collector power dissipation of 150mW, and junction temperature of 150°C.

Transistors
1
Publication date: March 2003 SJC00071BED
2SB1218A
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD1819A
■ Features
• High forward current transfer ratio h
FE
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−45 V
Collector-emitter voltage (Base open) V
CEO
−45 V
Emitter-base voltage (Collector open) V
EBO
−7V
Collector current I
C
−100 mA
Peak collector current I
CP
−200 mA
Collector power dissipation P
C
150 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= −10 µA, I
E
= 0 −45 V
Collector-emitter voltage (Base open) V
CEO
I
C
= −2 mA, I
B
= 0 −45 V
Emitter-base voltage (Collector open) V
EBO
I
E
= −10 µA, I
C
= 0 −7V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= −20 V, I
E
= 0 − 0.1 µA
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= −10 V, I
B
= 0 −100 µA
Forward current transfer ratio
*
h
FE
V
CE
= −10 V, I
C
= −2 mA 160 460
Collector-emitter saturation voltage V
CE(sat)
I
C
= −100 mA, I
B
= −10 mA − 0.3 − 0.5 V
Transition frequency f
T
V
CB
= −10 V, I
E
= 1 mA, f = 200 MHz 80 MHz
Collector output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz 2.7 pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Marking Symbol: B
Rank Q R S No-rank
h
FE
160 to 260 210 to 340 290 to 460 160 to 460
Marking symbol BQ BR BS B
Product of no-rank is not classified and have no marking symbol for rank.
2.1±0.1
1.3±0.1
0.3
+0.1
–0.0
2.0±0.2
1.25±0.10 (0.425)
1
3
2
(0.65)
(0.65)
0.2±0.1
0.9±0.10 to 0.1
0.9
+0.2
–0.1
0.15
+0.10
–0.05
5°
10°
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Unit: mm
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1218A
2
SJC00071BED
I
B
V
BE
I
C
V
BE
V
CE(sat)
I
C
P
C
T
a
I
C
V
CE
I
C
I
B
h
FE
I
C
f
T
I
E
C
ob
V
CB
0 16040 12080
0
200
160
120
80
40
Collector power dissipation P
C
(
mW
)
Ambient temperature T
a
(
°C
)
0 −12−10−8−2 −6−4
0
−120
−100
−80
−60
−40
−20
T
a
= 25°C
−250 µA
−200 µA
−150 µA
−100 µA
−50 µA
I
B
= −300 µA
Collector current I
C
(
mA
)
Collector-emitter voltage V
CE
(
V
)
0 −300 −450−150
0
−60
−50
−40
−30
−20
−10
V
CE
= −5 V
T
a
= 25°C
Base current I
B
(
µA
)
Collector current I
C
(
mA
)
0 − 0.4 − 0.8 −1.6−1.2
0
−400
−300
−100
−250
−350
−200
−50
−150
V
CE
= −5 V
T
a
= 25°C
Base-emitter voltage V
BE
(
V
)
Base current I
B
(
µA
)
0 −2.0−1.6− 0.4 −1.2− 0.8
0
−240
−200
−160
−120
−80
−40
V
CE
= −5 V
T
a
= 75°C
−25°C
25°C
Base-emitter voltage V
BE
(
V
)
Collector current I
C
(
mA
)
−1 −10 −100
−1 000
− 0.001
− 0.01
− 0.1
−1
−10
I
C
/ I
B
= 10
25°C
−25°C
T
a
= 75°C
Collector-emitter saturation voltage V
CE(sat)
(
V
)
Collector current I
C
(
mA
)
−1 −10 −100
−1 000
0
600
500
400
300
200
100
V
CE
= −10 V
T
a
= 75°C
25°C
−25°C
Forward current transfer ratio h
FE
Collector current I
C
(
mA
)
0.1 1 10 100
0
160
120
40
100
140
80
20
60
V
CB
= −10 V
T
a
= 25°C
Transition frequency f
T
(
MHz
)
Emitter current I
E
(
mA
)
−1 −10 −100
0
8
6
2
5
7
4
1
3
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
I
E
= 0
f = 1 MHz
T
a
= 25°C
Collector-base voltage V
CB
(
V
)
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1218A
3
SJC00071BED
h Parameter V
CE
NF I
E
NF I
E
h Parameter I
E
0.01 0.1 1 10
0
6
5
4
3
2
1
V
CB
= −5 V
f = 1 kHz
R
g
= 2 kΩ
T
a
= 25°C
Noise figure NF
(
dB
)
Emitter current I
E
(
mA
)
0.1 1 10
0
20
16
12
8
4
V
CB
= −5 V
R
g
= 50 kΩ
T
a
= 25°C
f = 100 Hz
10 kHz
1 kHz
Noise figure NF
(
dB
)
Emitter current I
E
(
mA
)
0.1 1 10
1
100
10
V
CE
= −5 V
f = 270 Hz
T
a
= 25°C
h
fe
h
oe
(µS)
h
ie
(kΩ)
h
re
(× 10
−4
)
h Parameter
Emitter current I
E
(
mA
)
−1 −10 −100
1
100
10
I
E
= 2 mA
f = 270 Hz
T
a
= 25°C
h
fe
h
oe
(µS)
h
ie
(kΩ)
h
re
(× 10
−4
)
h Parameter
Collector-emitter voltage V
CE
(
V
)
This product complies with the RoHS Directive (EU 2002/95/EC).
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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Panasonic 2SB1218A User manual

Panasonic
Brand
Panasonic
Model
2SB1218A
Category
Network switches
Type
User manual
This manual is also suitable for

Panasonic 2SB1218A

Panasonic 2SB1218A is a silicon PNP epitaxial planar type transistor designed for general amplification applications. It is complementary to 2SD1819A. The 2SB1218A features a high forward current transfer ratio (hFE) and is packaged in a compact S-Mini type package, allowing for downsizing of equipment and automatic insertion through tape and magazine packing.

The device has an absolute maximum rating collector-base voltage of -45V, collector-emitter voltage of -45V, emitter-base voltage of -7V, collector current of -100mA, peak collector current of -200mA, collector power dissipation of 150mW, and junction temperature of 150°C.

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