Philips SA5223 User manual

Philips
Brand
Philips
Model
SA5223
Type
User manual

Philips SA5223 is a wide-band, low-noise amplifier with differential outputs, incorporating AGC, optimized for signal recovery in wide-dynamic-range fiber optic receivers.

Key features:

  • Extremely low noise: 1.17pA/√Hz
  • Large bandwidth: 150MHz
  • Differential outputs
  • Internal hold capacitor
  • High input overload: 4mA
  • High power-supply-rejection ratio: 55dB
  • Tight transresistance control

Potential use cases:

  • OC3 SONET preamp
  • Current-to-voltage converters
  • Wide-band gain block
  • Medical and scientific instrumentation
  • Sensor preamplifiers
  • Single-ended to differential conversion

Philips SA5223 is a wide-band, low-noise amplifier with differential outputs, incorporating AGC, optimized for signal recovery in wide-dynamic-range fiber optic receivers.

Key features:

  • Extremely low noise: 1.17pA/√Hz
  • Large bandwidth: 150MHz
  • Differential outputs
  • Internal hold capacitor
  • High input overload: 4mA
  • High power-supply-rejection ratio: 55dB
  • Tight transresistance control

Potential use cases:

  • OC3 SONET preamp
  • Current-to-voltage converters
  • Wide-band gain block
  • Medical and scientific instrumentation
  • Sensor preamplifiers
  • Single-ended to differential conversion
Philips
Semiconductors
SA5223
Wide dynamic range AGC
transimpedance amplifier (150MHz)
Product specification 1995 Oct 24
INTEGRATED CIRCUITS
IC19 Data Handbook
Philips Semiconductors Product specification
SA5223Wide dynamic range AGC transimpedance amplifier(150MHz)
2
1995 Oct 24 853-1816 15939
DESCRIPTION
The SA5223 is a wide-band, low-noise transimpedance amplifier
with differential outputs, incorporating AGC and optimized for signal
recovery in wide-dynamic-range fiber optic receivers, such as
SONET. The part is also suited for many other RF and fiber optic
applications as a general purpose gain block.
The SA5223 is the first AGC amplifier to incorporate internal AGC
loop hold capacitor, therefore, no external components are required.
The internal AGC loop enables the SA5223 to effortlessly handle
bursty data over a range of nA to mA of signal current, positive
direction (sinking) only.
FEATURES
•Extremely low noise:
1.17pA
ń
Hz
Ǹ
•Single 5V supply
•Low supply current: 22mA
•Large bandwidth: 150MHz
•Differential outputs
•Internal hold capacitor
•Low input/output impedances
•High power-supply-rejection ratio: 55dB
•Tight transresistance control
•High input overload: 4mA
•2000V HBM ESD protection
PIN DESCRIPTION
D Package
IN
GND
2
OUT
V
CC
1
2
3
4
8
7
6
5
OUT
GND
4
GND
3
GND
1
SD00369
APPLICATIONS
•OC3 SONET preamp (see AN1431 for detailed analysis
•Current-to-voltage converters
•Wide-band gain block
•Medical and scientific instrumentation
•Sensor preamplifiers
•Single-ended to differential conversion
•Low noise RF amplifiers
•RF signal processing
ORDERING INFORMATION
DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #
8-Pin Plastic Small Outline
-40 to +85°C
SA5223D SOT96-1
For unpackaged die please contact factory.
ABSOLUTE MAXIMUM RATINGS
SYMBOL PARAMETER RATING UNITS
V
CC
Power supply voltage 6 V
T
A
Ambient temperature range -40 to +85
°C
T
J
Junction temperature range -55 to +150
°C
T
STG
Storage temperature range -65 to +150
°C
P
D
Power dissipation T
A
= 25
o
C (still air)
1
0.78 W
I
INMAX
Maximum input current 5 mA
NOTE:
1. Maximum power dissipation is determined by the operating ambient temperature and the thermal resistance θ
JA
= 158
o
C/W. Derate
6.2mW/
°C above 25°C.
RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER RATING UNITS
V
CC
Power supply voltage 4.5 to 5.5 V
T
A
Ambient temperature range: SA grade -40 to +85
°C
T
J
Junction temperature range: SA grade -40 to +105
°C
Philips Semiconductors Product specification
SA5223Wide dynamic range AGC transimpedance amplifier(150MHz)
1995 Oct 24
3
DC ELECTRICAL CHARACTERISTICS
Typical data and Min and Max limits apply at T
A
= 25°C, and V
CC
= +5V, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
SA5223
UNIT
SYMBOL
PARAMETER
TEST
CONDITIONS
Min Typ Max
UNIT
V
IN
Input bias voltage 1.3 1.55 1.8 V
V
O
±
Output bias voltage 2.9 3.2 3.5 V
V
OS
Output offset voltage (V
PIN6
- V
PIN7
) -200 80 +200 mV
I
CC
Supply current 15 22 29 mA
I
OMAX
Output sink/source current 1.5 2 mA
NOTE: Standard deviations are estimated from design simulations to represent manufacturing variations over the life of the product.
AC ELECTRICAL CHARACTERISTICS
Typical data and Min and Max limits apply at T
A
= 25°C and V
CC
= +5V, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
SA5223
UNIT
SYMBOL
PARAMETER
TEST
CONDITIONS
Min Typ Max
UNIT
R
T
Transresistance (differential output)
DC tested, R
L
= ∞, I
IN
= 0-1µA
90 125 160 kΩ
R
T
Transresistance
(single-ended output)
DC tested, R
L
= ∞, I
IN
= 0-1µA
45 62.5 80 kΩ
R
O
Output resistance
(differential output)
DC tested 140 Ω
R
O
Output resistance
(single-ended output)
DC tested 70 Ω
f
3dB
Bandwidth (-3dB) Test Circuit 1 110 150 MHz
R
IN
Input resistance DC tested 250
Ω
C
IN
Input capacitance
1
0.7
pF
C
INT
Input capacitance including Miller multiplied
capacitance
4.0
pF
∆R/∆V Transresistance power supply sensitivity V
CC1
= V
CC2
= 5 ±0.5V 3 %/V
∆R/∆T
Transresistance ambient temperature sensi-
tivity
∆T
A
= T
A
MAX
- T
A
MIN
0.09
%/
o
C
I
IN
RMS noise current spectral density (referred
to input)
2
Test Circuit 2, f = 10MHz 1.17
pAń Hz
Ǹ
Integrated RMS noise current over the band-
idth (referred to inp t)
Test circuit 2,
∆f = 50MHz
7
w
idth
(
re
f
erre
d
t
o
i
npu
t)
C
S
=
0.1
p
F
∆f = 100MHz 12
I
T
C
S
=
0
.
1F
∆f = 150MHz 16
nA
T
∆f = 50MHz 8
C
S
= 0.4pF ∆f = 100MHz 13
∆f = 150MHz 18
PSRR Power supply rejection ratio (change in V
OS
) DC Tested, ∆V
CC
= ±0.5V –55 dB
PSRR Power supply rejection ratio
3
f = 1.0MHz, Test Circuit 3 –20 dB
V
OLMAX
Maximum differential output AC voltage I
i
= 0–2mA peak AC 800 mV
dR
T
dt
AGC loop time constant parameter
4
10µA to 20µA steps 1 dB/ms
I
INMAX
Maximum input amplitude for output duty
cycle of 50 ±5%
Test circuit 4 +2 mA
t
r
, t
f
Output rise and fall times 10 – 90% 2.2 ns
t
D
Group delay f = 10MHz 2.2 ns
NOTES:
1. Does not include Miller-multiplied capacitance of input device.
2. Noise performance measured differential. Single-ended output noise is higher due to CM noise.
3. PSRR is output referenced and is circuit board layout dependent at higher frequencies. For best performance use a RF filter in V
CC
line.
4. This implies that the SA5223 gain will change 1dB (10%) in the absence of data for 1ms (i.e., can handle bursty data without degrading Bit
Error Rate (BER) for 100,000 cycles at 100MHz).
Philips Semiconductors Product specification
SA5223Wide dynamic range AGC transimpedance amplifier(150MHz)
1995 Oct 24
4
TEST CIRCUITS
Test Circuit 1: Bandwidth
NETWORK ANALYZER
S-PARAMETER TEST SET
PORT1 PORT2
V
CC
.1uF
.1uF
50
Z
O
= 50Ω
OUT
OUT
IN DUT
0.1uF
R=1k
50
GND
1
SINGLE-ENDED
GND
2
R
TSE
+ 12.4 @ S
21
@ R
IN
,R
IN
+ 1k ) R
INSS
[ 1250W
Z
O
= 50Ω
SD00370
500
500
Test Circuit 2: Noise
SPECTRUM ANALYZER
V
CC
OUT
OUT
IN DUT
GND
2
GND
1
NE5209
50Ω
.1µF
.1µF
1.0µF
1.0µF
C
S
50Ω
SD00371
NETWORK ANALYZER
S-PARAMETER TEST SET
PORT1 PORT2
V
CC
.1uF
.1uF
OUT
OUT
IN DUT
GND
2
GND
1
50Ω
CAL
UNBAL.
0.1uF
NC
50Ω
BIAS TEE
5V
NHO300HB
TRANSFORMER
CONVERSION
LOSS = 9dB
100Ω
BAL.
SD00372
Test Circuit 3: PSRR
Test Circuit 4: Duty Cycle Distortion
PULSE GEN
OUT
OUT
DUT
OSCILLOSCOPE
A
B
Meaurement done using
differential wave forms
5V
0.1uF
.1µF
.1µF
GND
1
GND
2
Z
O
= 50Ω
Z
O
= 50Ω
IN
500Ω
500Ω
1kΩ
50Ω
OFFSET
SD00373
50% DUTY CYCLE
Philips Semiconductors Product specification
SA5223Wide dynamic range AGC transimpedance amplifier(150MHz)
1995 Oct 24
5
1
2
3
4
8
7
6
5
SD00507
GND
G1
IN
V
CC
OUT
OUTB
G2
GND
PAD CENTER LOCATIONS
X(mm) Y(mm)
GND1 -0.400 -0.053
IN -0.400 -0.223
GND2 +0.400 -0.342
OUT +0.400 -0.046
OUTB +0.400 +0.154
V
CC
+0.400 +0.380
DIE SIZE
X(mm) Y(mm)
1.08 1.32
NC NC
NC
Figure 1. SA5223 Bonding Diagram
Die Sales Disclaimer
Due to the limitations in testing high frequency and other parameters
at the die level, and the fact that die electrical characteristics may
shift after packaging, die electrical parameters are not specified and
die are not guaranteed to meet electrical characteristics (including
temperature range) as noted in this data sheet which is intended
only to specify electrical characteristics for a packaged device.
All die are 100% functional with various parametrics tested at the
wafer level, at room temperature only (25°C), and are guaranteed to
be 100% functional as a result of electrical testing to the point of
wafer sawing only. Although the most modern processes are
utilized for wafer sawing and die pick and place into waffle pack
carriers, it is impossible to guarantee 100% functionality through this
process. There is no post waffle pack testing performed on
individual die.
Since Philips Semiconductors has no control of third party
procedures in the handling or packaging of die, Philips
Semiconductors assumes no liability for device functionality or
performance of the die or systems on any die sales.
Although Philips Semiconductors typically realizes a yield of 85%
after assembling die into their respective packages, with care
customers should achieve a similar yield. However, for the reasons
stated above, Philips Semiconductors cannot guarantee this or any
other yield on any die sales.
Philips Semiconductors Product specification
SA5223Wide dynamic range AGC transimpedance amplifier(150MHz)
1995 Oct 24
6
TOP PLANE
BOTTOM PLANE
+5V
L1
10uH
R1
100
R2
0
C2
0.1uF
C1
0.1uF
C3
0.1uF
D1*
U1
1
2
3
4
8
7
6
5
GND3
GND1
IN
GND4
Vcc
OUT
OUT
GND2
SA5223
*D1: 1A358 – = 1300nm
ABB HAFO 1.5GHz PIN DIODE
ANALOG GND
DIGITAL GND
Ω
λ
Ω
R3
120Ω
R4
120Ω
C4
4.7pF
C6
0.1uF
C8
0.1uF
C9
0.1uF
+5V
+
C10
4.7uF
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
U2
NE5224
L2
10uH
C5
0.1uF
C8
0.1uF
CAZN
CAZP
GNDA
D_IN
D_IN
VccA
CF
JAM
VSET
VREF
VccE
D_OUT
D_OUT
GND_E
ST
ST
+5V
R6
130
R7
82
C11
0.1uF
+3.2V
R5
5
R10
130
DOUT
DOUT
R9
82
C12
0.1uF
+5V
R8
5
R11
3k
R12
1.8k
C13
0.1uF
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Ω
SD00521
Figure 2. SONET Test Board — 155Mb/s (1300nm)
Philips Semiconductors Product specification
SA5223Wide dynamic range AGC transimpedance amplifier(150MHz)
1995 Oct 24
7
TOP VIEW BOTTOM VIEW
D1
U1
+5V
GND
GND
C2
R1
C1
R2
C3
SA5223/5224
SONET – 155MB/s
FO11000
L1
GND
GND
+5V
U2
C10
DoutDout
R12
C12
R6
R7
R8
R10
R9
R5
C11
C13
R11
C8
C9
L2
C4
C6
C7
C5
R3
R4
SD00522
Figure 3. SA5223 Board Layout (NOT ACTUAL SIZE)
Philips Semiconductors Product specification
SA5223Wide dynamic range AGC transimpedance amplifier(150MHz)
1995 Oct 24
8
28.00
26.00
24.00
22.00
20.00
18.00
16.00
-50 -25 0 25 50 75 100
TEMPERATURE (°C)
V
CC
= 5.5V
V
CC
= 5.0V
V
CC
= 4.5V
SUPPLY CURRENT (mA)
SD00527
Figure 4. SA5223 I
CC
vs Temperature
1.900
-50 -25 0 25 50 75 100
TEMPERATURE (°C)
SUPPLY CURRENT (mA)
1.800
1.700
1.600
1.500
1.400
1.300
1.200
V
CC
= 5.5V
V
CC
= 5.0V
V
CC
= 4.5V
SD00528
Figure 5. SA5223 Input V
BIAS
vs Temperature
3.800
-50 -25 0 25 50 75 100
TEMPERATURE (°C)
OUTPUT V (V)
3.600
3.400
3.200
3.000
2.800
2.600
BIAS
V
CC
= 5.5V
V
CC
= 5.0V
V
CC
= 4.5V
SD00529
Figure 6. SA5223 Output V
BIAS
vs Temperature
100
-50 -25 0 25 50 75 100
TEMPERATURE (°C)
V (mV)
V
CC
= 5.5V
V
CC
= 5.0V
V
CC
= 4.5V
90
80
70
60
50
40
OS
V
OS
= (I
IN
= 0) = V
OUT
– V
OUT
R
L
= INFINITY
SD00530
Figure 7. SA5223 Output V
OS
vs Temperature
3.500
0123456
DC INPUT CURRENT (µA)
V (V)
V
OUT
V
OUT
OUT
3.400
3.300
3.200
3.100
3.000
2.900
7
8910
R
L
= INFINITY
V
CC
= 5.0V, Temperature = 25°C
SD00531
Figure 8. SA5223 Output Voltage vs DC Input Current
(for small input current)
4.200
1 10 100 1000 10000
DC INPUT CURRENT (µA LOG)
V (V)
OUT
V
OUT
4.000
3.800
3.600
3.400
3.200
3.000
2.800
2.600
2.400
2.200
2.000
R
L
= INFINITY
V
CC
= 5.0V, Temperature = 25°C
SD00532
V
OUT
Figure 9. SA5223 Output Voltage vs DC Input Current
(for large input current)
Philips Semiconductors Product specification
SA5223Wide dynamic range AGC transimpedance amplifier(150MHz)
1995 Oct 24
9
0.350
0123456
DC INPUT CURRENT (µA)
V (V)
OD
7
8910
0.300
0.250
0.200
0.150
0.100
0.050
0.000
R
L
= INFINITY
SD00533
V
OD
= V
OUT
– V
OUT
– V
OS
V
CC
= 5.0V, Temperature = 25°C
Figure 10. SA5223 Differential Output vs DC I
IN
(for small input current)
1.800
DC INPUT CURRENT (µA, LOG)
V (V)
OD
1.600
1.400
1.200
1.000
0.800
0.600
0.400
0.200
0.000
1 10 100 1000 10000
SD00534
R
L
= INFINITY
V
OD
= V
OUT
– V
OUT
– V
OS
V
CC
= 5.0V, Temperature = 25°C
Figure 11. SA5223 Differential Output vs DC I
IN
160
0123456
DC INPUT CURRENT (µA)
85°C
RT (K )
140
120
100
80
60
40
20
0
78910
25°C
-40°C
Ω
R
L
= INFINITY
SD00535
RT = V
OD
/ I
IN
V
CC
= 5.0V
Temperature = -40, 25, 85°C
Figure 12. SA5223 Differential RT vs DC I
IN
(for small input current)
1000
1 10 100 1000 10000
100
10
1
0
DC INPUT CURRENT (µA LOG)
25°C
R
L
= INFINITY
RT (K , LOG)
Ω
SD00536
RT = V
OD
/ I
IN
V
CC
= 5.0V
Temperature = -40, 25, 85°C
85°C
-40°C
Figure 13. SA5223 Differential RT vs DC I
IN
(for large input current)
160
0123456
DC INPUT CURRENT (µA)
RT (K )
140
120
100
80
60
40
20
0
78910
Ω
R
L
= INFINITY
V
CC
= 5.0V
SD00537
RT = V
OD
/ I
IN
V
CC
= 5.0V
Temperature = 25°C
V
CC
= 4.5V
V
CC
= 5.5V
Figure 14. SA5223 Differential RT vs DC I
IN
(for small input current)
1000
1 10 100 1000 10000
100
10
1
0
DC INPUT CURRENT (µA LOG)
25°C
RT (K , LOG)
Ω
SD00538
R
L
= INFINITY
RT = V
OD
/ I
IN
V
CC
= 4.5, 5.0, 5.0V
Temperature = 25°C
85°C
-40°C
Figure 15. SA5223 Differential RT vs DC I
IN
(for large input current)
Philips Semiconductors Product specification
SA5223Wide dynamic range AGC transimpedance amplifier(150MHz)
1995 Oct 24
10
16
1 10 100 300
14
12
10
8
6
4
2
0
-2
-4
FREQUENCY (MHz)
85°C
25°C
-40°C
V
CC
= 5.0V
0°C
70°C
SINGLE-ENDED OUTPUT
S (dB)
21
SD00539
Figure 16. Insertion Gain vs Frequency
16
1 10 100 300
14
12
10
8
6
4
2
0
-2
-4
FREQUENCY (MHz)
V
CC
= 5.5V
TEMPERATURE = 25°C
SINGLE-ENDED OUTPUT
V
CC
= 5.0V
V
CC
= 4.5V
S (dB)
21
SD00540
Figure 17. Insertion Gain vs Frequency
9
8
7
6
5
4
3
2
1
0
-1
START = 1MHz STOP = 200MHz
FREQUENCY (MHz, LINEAR)
S GROUP DELAY (ns)
21
SINGLE-ENDED OUTPUT
VCC = 5.0V
TEMPERATURE = 25°C
SD00541
Figure 18. Group Delay vs Frequency
10.0
1 10 100 300
FREQUENCY (MHz)
V
CC
= 5.0V
Temperature = 25°C
INPUT NOISE (PA/ Hz)
√
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
SD00542
C
S
= 0pF
Figure 19. SA5223 Input Current RMS Noise Spectral Density
Philips Semiconductors Product specification
SA5223Wide dynamic range AGC transimpedance amplifier (150MHz)
1995 Oct 24
11
SO8: plastic small outline package; 8 leads; body width 3.9mm SOT96-1
Philips Semiconductors Product specification
SA5223Wide dynamic range AGC transimpedance amplifier (150MHz)
1995 Oct 24
12
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended
periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Sunnyvale, California 94088–3409
Telephone 800-234-7381
Copyright Philips Electronics North America Corporation 2000
All rights reserved. Printed in U.S.A.
Date of release: 08-98
Document order number: 9397 750 06831


Data sheet
status
Objective
specification
Preliminary
specification
Product
specification
Product
status
Development
Qualification
Production
Definition
[1]
This data sheet contains the design target or goal specifications for product development.
Specification may change in any manner without notice.
This data sheet contains preliminary data, and supplementary data will be published at a later date.
Philips Semiconductors reserves the right to make chages at any time without notice in order to
improve design and supply the best possible product.
This data sheet contains final specifications. Philips Semiconductors reserves the right to make
changes at any time without notice in order to improve design and supply the best possible product.
Data sheet status
[1] Please consult the most recently issued datasheet before initiating or completing a design.
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Philips SA5223 User manual

Philips
Brand
Philips
Model
SA5223
Type
User manual

Philips SA5223 is a wide-band, low-noise amplifier with differential outputs, incorporating AGC, optimized for signal recovery in wide-dynamic-range fiber optic receivers.

Key features:

  • Extremely low noise: 1.17pA/√Hz
  • Large bandwidth: 150MHz
  • Differential outputs
  • Internal hold capacitor
  • High input overload: 4mA
  • High power-supply-rejection ratio: 55dB
  • Tight transresistance control

Potential use cases:

  • OC3 SONET preamp
  • Current-to-voltage converters
  • Wide-band gain block
  • Medical and scientific instrumentation
  • Sensor preamplifiers
  • Single-ended to differential conversion
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