IRFR420, IRFU420, SiHFR420, SiHFU420
www.vishay.com Vishay Siliconix
S21-0771-Rev. F, 19-Jul-2021 2Document Number: 91275
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Note
a. When mounted on 1" square PCB (FR-4 or G-10 material)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP MAX. UNIT
Maximum junction-to-ambient RthJA - 110
°C/WMaximum junction-to-ambient (PCB mount) a RthJA -50
Maximum junction-to-case (drain) RthJC -3.0
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 500 - - V
VDS temperature coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.59 - V/°C
Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V
Gate-source leakage IGSS V
GS = ± 20 V - - ± 100 nA
Zero gate voltage drain current IDSS
VDS = 500 V, VGS = 0 V - - 25 μA
VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250
Drain-source on-state resistance RDS(on) V
GS = 10 V ID =1.4 A b --3.0Ω
Forward transconductance gfs VDS = 50 V, ID = 1.4 A 1.5 - - S
Dynamic
Input capacitance Ciss VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
- 360 -
pFOutput capacitance Coss -92-
Reverse transfer capacitance Crss -37-
Total gate charge Qg
VGS = 10 V ID = 2.1 A, VDS = 400 V,
see fig. 6 and 13 b
--19
nC Gate-source charge Qgs --3.3
Gate-drain charge Qgd --13
Turn-on delay time td(on)
VDD = 250 V, ID = 2.1 A,
Rg = 18 Ω, RD = 120 Ω, see fig. 10 b
-8.0-
ns
Rise time tr -8.6-
Turn-off delay time td(off) -33-
Fall time tf -16-
Gate input resistance Rgf = 1 MHz, open drain 1.8 - 12.6 Ω
Internal drain inductance LD
Between lead,
6 mm (0.25") from
package and center of
die contact
-4.5-
nH
Internal source inductance LS-7.5-
Drain-Source Body Diode Characteristics
Continuous source-drain diode current IS
MOSFET symbol
showing the
integral reverse
p - n junction diode
--2.4
A
Pulsed diode forward current a ISM --8.0
Body diode voltage VSD TJ = 25 °C, IS = 2.4 A, VGS = 0 V b --1.6V
Body diode reverse recovery time trr TJ = 25 °C, IF = 2.1 A, dI/dt = 100 A/μs b- 260 520 ns
Body diode reverse recovery charge Qrr -0.701.4μC
Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
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