Samsung M471B5273BH1-CF8 Specification

Samsung
Brand
Samsung
Model
M471B5273BH1-CF8
Category
Memory modules
Type
Specification
Rev. 1.03 June 2009
1 of 29
DDR3 SDRAM
Unbuffered SoDIMM
DDR3 SDRAM Specification
204pin Unbuffered SODIMM based on 2Gb B-die
64-bit Non-ECC
78FBGA with Lead-Free & Halogen-Free
(RoHS compliant)
* Samsung Electronics reserves the right to change products or specification without notice.
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHER-
WISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOL-
OGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT
GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
Rev. 1.03 June 2009
2 of 29
DDR3 SDRAM
Unbuffered SoDIMM
1.0 DDR3 Unbuffered SoDIMM Ordering Information .....................................................................5
2.0 Key Features ................................................................................................................................5
3.0 Address Configuration ................................................................................................................5
4.0 x64 DIMM Pin Configurations (Front side/Back Side) ..............................................................6
5.0 Pin Description ............................................................................................................................7
6.0 Input/Output Functional Description .........................................................................................8
7.0 Function Block Diagram: ............................................................................................................9
7.1 4GB, 512Mx64 Module (Populated as 2 ranks of x8 DDR3 SDRAMs) ...................................................9
8.0 Absolute Maximum Ratings ......................................................................................................10
8.1 Absolute Maximum DC Ratings ....................................................................................................10
8.2 DRAM Component Operating Temperature Range ..........................................................................10
9.0 AC & DC Operating Conditions ................................................................................................10
9.1 Recommended DC Operating Conditions (SSTL-15) .......................................................................10
10.0 AC & DC Input Measurement Levels ......................................................................................11
10.1 AC & DC Logic Input Levels for Single-ended Signals ...................................................................11
10.2 V
REF
Tolerances. ......................................................................................................................12
10.3 AC and DC Logic Input Levels for Differential Signals ...................................................................13
10.3.1 Differential Signals Definition ..............................................................................................13
10.3.2 Differential Swing Requirement for Clock (CK - CK) and Strobe (DQS - DQS) ............................13
10.3.3 Single-ended Requirements for Differential Signals ...............................................................14
10.3.4 Differential Input Cross Point Voltage ...................................................................................15
10.4 Slew Rate Definition for Single Ended Input Signals .....................................................................15
10.5 Slew rate definition for Differential Input Signals ..........................................................................15
11.0 AC & DC Output Measurement Levels ...................................................................................16
11.1 Single Ended AC and DC Output Levels ......................................................................................16
11.2 Differential AC and DC Output Levels ..........................................................................................16
11.3 Single-ended Output Slew Rate ..................................................................................................16
11.4 Differential Output Slew Rate .....................................................................................................17
12.0 IDD specification definition ....................................................................................................18
12.1 IDD SPEC Table ........................................................................................................................20
13.0 Input/Output Capacitance .......................................................................................................20
13.1 2Rx16 1GB SoDIMM ..................................................................................................................20
14.0 Electrical Characteristics and AC timing ..............................................................................21
14.1 Refresh Parameters by Device Density ........................................................................................21
14.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin .............................................21
14.3 Speed Bins and CL, tRCD, tRP, tRC and tRAS for corresponding Bin ..............................................22
14.3.1 Speed Bin Table Notes .......................................................................................................23
Table Contents
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DDR3 SDRAM
Unbuffered SoDIMM
15.0 Timing Parameters for DDR3-1066 and DDR3-1333 .............................................................24
15.1 Jitter Notes ..............................................................................................................................27
15.2 Timing Parameter Notes ...........................................................................................................28
16.0 Physical Dimensions :............................................................................................................. 29
16.1 256Mbx8 based 512Mx64 Module (2 Ranks) .................................................................................29
Rev. 1.03 June 2009
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DDR3 SDRAM
Unbuffered SoDIMM
Revision History
Revision Month Year History
1.0 December 2008 - First Release
1.01 February 2009 - Corrected Module Physical Dimensions.
1.02 February 2009 - Added Tolerances to Physical Dimensions
1.03 June 2009 - Corrected Typo
Rev. 1.03 June 2009
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DDR3 SDRAM
Unbuffered SoDIMM
1.0 DDR3 Unbuffered SoDIMM Ordering Information
Note :
* ## : F8 / H9
** F8 : 1066Mbps 7-7-7, H9 : 1333Mbps 9-9-9
2.0 Key Features
• JEDEC standard 1.5V ± 0.075V Power Supply
•V
DDQ
= 1.5V ± 0.075V
• 400 MHz f
CK
for 800Mb/sec/pin, 533MHz f
CK
for 1066Mb/sec/pin, 667MHz f
CK
for 1333Mb/sec/pin
• 8 independent internal bank
• Programmable CAS
Latency: 6,7,8,9
• Programmable Additive Latency(Posted CAS
) : 0, CL - 2, or CL - 1 clock
• Programmable CAS
Write Latency(CWL) = 5(DDR3-800), 6(DDR3-1066), 7(DDR3-1333)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or
write [either On the fly using A12 or MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than T
CASE
85°C, 3.9us at 85°C < T
CASE
< 95 °C
• Asynchronous Reset
3.0 Address Configuration
Part Number Density Organization Component Composition
Number of
Rank
Height
M471B5273BH1-CF8/H9 4GB 512Mx64 256Mx8(K4B2G0846B-HC##)*16 2 30mm
Speed
DDR3-1066 DDR3-1333
Unit
7-7-7 9-9-9
tCK(min) 1.875 1.5 ns
CAS Latency 79tCK
tRCD(min) 13.125 13.5 ns
tRP(min) 13.125 13.5 ns
tRAS(min) 37.5 36 ns
tRC(min) 50.625 49.5 ns
Organization Row Address Column Address Bank Address Auto Precharge
256x8(2Gb) based Module A0-A14 A0-A9 BA0-BA2 A10/AP
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DDR3 SDRAM
Unbuffered SoDIMM
4.0 x64 DIMM Pin Configurations (Front side/Back Side)
Note :
1. NC = No Connect, NU = Not Usable, RFU = Reserved Future Use
2. TEST(pin 125) is reserved for bus analysis probes and is NC on normal memory modules.
3. This address might be connected to NC balls of the DRAMs (depending on density); either way they will be connected to the termination resistor.
SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.
Pin Front Pin Back Pin Front Pin Back Pin Front Pin Back
1
V
REFDQ
2
V
SS
71
V
SS
72
V
SS
139
V
SS
140 DQ38
3
V
SS
4DQ4 KEY 141 DQ34 142 DQ39
5DQ06DQ573CKE074CKE1
143
DQ35 144
V
SS
7DQ18
V
SS
75
V
DD
76
V
DD
145
V
SS
146 DQ44
9
V
SS
10 DQS077 NC 78
A15
3
147
DQ40 148 DQ45
11 DM0 12DQS079 BA2 80
A14
3
149
DQ41 150
V
SS
13
V
SS
14
V
SS
81
V
DD
82
V
DD
151
V
SS
152 DQS5
15 DQ2 16 DQ6 83 A12/BC
84 A11 153 DM5 154 DQS5
17 DQ3 18 DQ7 85 A9 86 A7 155
V
SS
156
V
SS
19
V
SS
20
V
SS
87
V
DD
88
V
DD
157DQ42158DQ46
21DQ822DQ1289A890A6159DQ43160DQ47
23DQ924DQ1391A592A4161
V
SS
162
V
SS
25
V
SS
26
V
SS
93
V
DD
94
V
DD
163DQ48164DQ52
27 DQS
1 28 DM1 95 A3 96 A2 165 DQ49 166 DQ53
29 DQS1 30 RESET
97 A1 98 A0 167
V
SS
168
V
SS
31
V
SS
32
V
SS
99
V
DD
100
V
DD
169
DQS
6
170
DM6
33 DQ10 34 DQ14 101 CK0 102 CK1 171
DQS6
172
V
SS
35 DQ11 36 DQ15 103 CK0104CK1173
V
SS
174 DQ54
37
V
SS
38
V
SS
105
V
DD
106
V
DD
175DQ50176DQ55
39 DQ16 40 DQ20
107 A10/AP 108 BA1 177 DQ51 178
V
SS
41 DQ17 42 DQ21 109 BA0 110 RAS 179
V
SS
180 DQ60
43
V
SS
44
V
SS
111
V
DD
112
V
DD
181DQ56182DQ61
45 DQS
246 DM2113 WE 114 S0 183 DQ57 184
V
SS
47 DQS2 48
V
SS
115 CAS 116 ODT0 185
V
SS
186 DQS7
49
V
SS
50 DQ22 117
V
DD
118
V
DD
187 DM7 188 DQS7
50 DQ18 52 DQ23
119
A13
3
120ODT1189
V
SS
190
V
SS
53 DQ19 54
V
SS
121 S1 122 NC 191DQ58192DQ62
55
V
SS
56 DQ28 123
V
DD
124
V
DD
193DQ59194DQ63
57 DQ24 58 DQ29
125 TEST 126
V
REFCA
195
V
SS
196
V
SS
59 DQ25 60
V
SS
127
V
SS
128
V
SS
197 SA0 198 NC
61
V
SS
62 DQS3 129 DQ32 130 DQ36 199
V
DDSPD
200 SDA
63 DM3 64 DQS3
131
DQ33 132 DQ37 201 SA1 202 SCL
65
V
SS
66
V
SS
133
V
SS
134
V
SS
203
V
TT
204
V
TT
67 DQ26 68 DQ30
135
DQS4136 DM4
69 DQ27 70 DQ31
137 DQS4 138
V
SS
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DDR3 SDRAM
Unbuffered SoDIMM
5.0 Pin Description
*The V
DD
and V
DDQ
pins are tied common to a single power-plane on these designs.
Pin Name Description Number Pin Name Description Number
CK0, CK1 Clock Inputs, positive line 2 DQ0-DQ63 Data Input/Output 64
CK
0, CK1 Clock Inputs, negative line 2 DM0-DM7
Data Masks/ Data strobes,
Termination data strobes
8
CKE0, CKE1 Clock Enables 2 DQS0-DQS7 Data strobes 8
RAS
Row Address Strobe 1 DQS0-DQS7 Data strobes complement 8
CAS
Column Address Strobe 1 RESET Reset Pin 1
WE
Write Enable 1 TEST
Logic Analyzer specific test pin (No connect
on SODIMM)
1
S
0, S1 Chip Selects 2
V
DD
Core and I/O Power 18
A0-A9, A11,
A13-A15
Address Inputs 14
V
SS
Ground 52
A10/AP Address Input/Autoprecharge 1
V
REFDQ
V
REFCA
Input/Output Reference 2
A12/BC
Address Input/Burst chop 1
V
DDSPD
SPD and Temp sensor Power 1
BA0-BA2 SDRAM Bank Addresses 3
V
TT
Termination Voltage 2
ODT0, ODT1 On-die termination control 2 NC Reserved for future use 3
SCL Serial Presence Detect (SPD) Clock Input 1 Total 204
SDA SPD Data Input/Output 1
SA0-SA1 SPD Address 2
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DDR3 SDRAM
Unbuffered SoDIMM
6.0 Input/Output Functional Description
Symbol Type Function
CK0-CK1
CK0
-CK1
Input
The system clock inputs. All address and command lines are sampled on the cross point of the rising edge of CK and
falling edge of CK. A Delay Locked Loop (DLL) circuit is driven from the clock inputs and output timing for read opera-
tions is synchronized to the input clock.
CKE0-CKE1 Input
Activates the DDR3 SDRAM CK signal when high and deactivates the CK signal when low. By deactivating the clocks,
CKE low initiates the Power Down mode or the Self Refresh mode.
S
0-S1 Input
Enables the associated DDR3 SDRAM command decoder when low and disables the command decoder when high.
When the command decoder is disabled, new commands are ignored but previous operations continue. Rank 0 is
selected by S
0; Rank 1 is selected by S1.
R
AS, CAS, WE Input
When sampled at the cross point of the rising edge of CK and falling edge of CK
, signals CAS, RAS, and WE define
the operation to be executed by the SDRAM.
BA0-BA2 Input Selects which DDR3 SDRAM internal bank of eight is activated.
ODT0-ODT1 Input Asserts on-die termination for DQ, DM, DQS, and DQS signals if enabled via the DDR3 SDRAM mode register.
A0-A9,
A10/AP,
A11
A12/BC
A13-A15
Input
During a Bank Activate command cycle, defines the row address when sampled at the cross point of the rising edge of
CK and falling edge of CK
. During a Read or Write command cycle, defines the column address when sampled at the
cross point of the rising edge of CK and falling edge of CK
. In addition to the column address, AP is used to invoke
autoprecharge operation at the end of the burst read or write cycle. If AP is high, autoprecharge is selected and BA0-
BAn defines the bank to be precharged. If AP is low, autoprecharge is disabled. During a Precharge command cycle,
AP is used in conjunction with BA0-BAn to control which bank(s) to precharge. If AP is high, all banks will be pre-
charged regardless of the state of BA0-BAn inputs. If AP is low, then BA0-BAn are used to define which bank to pre-
charge.A12(BC
) is sampled during READ and WRITE commands to determine if burst chop (on-the fly) will be
performed (HIGH, no burst chop; LOW, burst chopped)
DQ0-DQ63 I/O Data Input/Output pins.
DM0-DM7 Input
The data write masks, associated with one data byte. In Write mode, DM operates as a byte mask by allowing input
data to be written if it is low but blocks the write operation if it is high. In Read mode, DM lines have no effect.
DQS0-DQS7
DQS
0-DQS7
I/O
The data strobes, associated with one data byte, sourced with data transfers. In Write mode, the data strobe is
sourced by the controller and is centered in the data window. In Read mode, the data strobe is sourced by the DDR3
SDRAMs and is sent at the leading edge of the data window. DQS
signals are complements, and timing is relative to
the crosspoint of respective DQS and DQS
.
V
DD
,V
DDSPD,
V
SS
Supply Power supplies for core, I/O, Serial Presence Detect, Temp sensor, and ground for the module.
V
REFDQ,
V
REFCA
Supply Reference voltage for SSTL15 inputs.
SDA I/O
This is a bidirectional pin used to transfer data into or out of the SPD EEPROM and Temp sensor. A resistor must be
connected from the SDA bus line to V
DDSPD
on the system planar to act as a pull up.
SCL Input This signal is used to clock data into and out of the SPD EEPROM and Temp sensor.
SA0-SA1 Input Address pins used to select the Serial Presence Detect and Temp sensor base address.
TEST I/O The TEST pin is reserved for bus analysis tools and is not connected on normal memory modules
RESET
Input RESET In Active Low This signal resets the DDR3 SDRAM
Rev. 1.03 June 2009
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DDR3 SDRAM
Unbuffered SoDIMM
7.0 Function Block Diagram:
7.1 4GB, 512Mx64 Module (Populated as 2 ranks of x8 DDR3 SDRAMs)
V7
V8
V5
S1
RAS
CAS
WE
CK1
CK1
CKE1
ODT1
A[0:N]
/BA[0:N]
S0
CK0
CK0
CKE0
ODT0
DQS3
DQS3
DM3
DQS
DQS
D11
CS
RAS
CAS
WE
CK
CK
CKE
ODT
A[N:0]/BA[N:0]
ZQ
DQ[0:7]
DM
240Ω
± 1%
DQ[24:31]
D3
CS
RAS
CAS
WE
CK
CK
CKE
ODT
A[N:0]/BA[N:0]
ZQ
240Ω
± 1%
Vtt
V
DD
Vtt
Rank0
Rank1
Note :
1. DQ wiring may differ from that shown
however ,DQ, DM, DQS and DQS
relationships are maintained as shown
V
SS
V
DD
D0 - D15
V
REFCA
V
DDSPD
SPD
CK0
V
REFDQ
D0 - D15
D0 - D15
D0 - D15, SPD
V
tt
CK1
CK0
CK1
RESET
V
tt
D8 - D15
D0 - D7
D0 - D7
D8 - D15
D0 - D7
V6
V2
V3
D6D12D3D9
V
tt
Address and Controllines
DQS
DQS
DQ[0:7]
DM
DQS1
DQS1
DM1
DQS
DQS
D1
CS
RAS
CAS
WE
CK
CK
CKE
ODT
A[N:0]/BA[N:0]
ZQ
DQ[0:7]
DM
240
Ω
± 1%
DQ[8:15]
D9
CS
RAS
CAS
WE
CK
CK
CKE
ODT
A[N:0]/BA[N:0]
ZQ
240Ω
± 1%
DQS
DQS
DQ[0:7]
DM
DQS0
DQS0
DM0
DQS
DQS
D0
CS
RAS
CAS
WE
CK
CK
CKE
ODT
A[N:0]/BA[N:0]
ZQ
DQ[0:7]
DM
240Ω
± 1%
DQ[0:7]
D8
CS
RAS
CAS
WE
CK
CK
CKE
ODT
A[N:0]/BA[N:0]
ZQ
240Ω
± 1%
DQS
DQS
DQ[0:7]
DM
DQS2
DQS2
DM2
DQS
DQS
D2
CS
RAS
CAS
WE
CK
CK
CKE
ODT
A[N:0]/BA[N:0]
ZQ
DQ[0:7]
DM
240Ω
± 1%
DQ[16:23]
D10
CS
RAS
CAS
WE
CK
CK
CKE
ODT
A[N:0]/BA[N:0]
ZQ
240Ω
± 1%
DQS
DQS
DQ[0:7]
DM
DQS
DQS
D4
CS
RAS
CAS
WE
CK
CK
CKE
ODT
A[N:0]/BA[N:0]
ZQ
DQ[0:7]
DM
240Ω
± 1%
D12
CS
RAS
CAS
WE
CK
CK
CKE
ODT
A[N:0]/BA[N:0]
ZQ
240Ω
± 1%
DQS
DQS
DQ[0:7]
DM
DQS
DQS
D14
CS
RAS
CAS
WE
CK
CK
CKE
ODT
A[N:0]/BA[N:0]
ZQ
DQ[0:7]
DM
240
Ω
± 1%
D6
CS
RAS
CAS
WE
CK
CK
CKE
ODT
A[N:0]/BA[N:0]
ZQ
240Ω
± 1%
DQS
DQS
DQ[0:7]
DM
DQS
DQS
D15
CS
RAS
CAS
WE
CK
CK
CKE
ODT
A[N:0]/BA[N:0]
ZQ
DQ[0:7]
DM
240Ω
± 1%
D7
CS
RAS
CAS
WE
CK
CK
CKE
ODT
A[N:0]/BA[N:0]
ZQ
240Ω
± 1%
DQS
DQS
DQ[0:7]
DM
DQS
DQS
D13
CS
RAS
CAS
WE
CK
CK
CKE
ODT
A[N:0]/BA[N:0]
ZQ
DQ[0:7]
DM
240Ω
± 1%
D5
CS
RAS
CAS
WE
CK
CK
CKE
ODT
A[N:0]/BA[N:0]
ZQ
240Ω
± 1%
DQS
DQS
DQ[0:7]
DM
DQS4
DQS4
DM4
DQ[32:39]
DQS6
DQS6
DM6
DQ[48:55]
DQS7
DQS7
DM7
DQ[56:63]
DQS5
DQS5
DM5
DQ[40:47]
V
DD
D7D5D10D8
V1
V4
V9
V7
V6
V9
V8
V4
V3
D15D13D2D0
D14D4D11D1
V1
V2
V5
V1
Vtt
A0
A1
A2
SA0
SA1
SCL
SDA
WP
SCL
(SPD)
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DDR3 SDRAM
Unbuffered SoDIMM
8.0 Absolute Maximum Ratings
8.1 Absolute Maximum DC Ratings
Note :
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2
standard.
3. V
DD
and V
DDQ
must be within 300mV of each other at all times;and V
REF
must be not greater than 0.6 x V
DDQ
, When V
DD
and V
DDQ
are less than
500mV; V
REF
may be equal to or less than 300mV.
8.2 DRAM Component Operating Temperature Range
Note :
1. Operating Temperature T
OPER
is the case surface temperature on the center/top side of the DRAM. For measurement conditions, please refer to the
JEDEC document JESD51-2.
2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported. During operation, the DRAM case tem-
perature must be maintained between 0-85°C under all operating conditions
3. Some applications require operation of the Extended Temperature Range between 85°C and 95°C case temperature. Full specifications are guaran-
teed in this range, but the following additional conditions apply:
a) Refresh commands must be doubled in frequency, therefore reducing the refresh interval tREFI to 3.9us. It is also possible to specify a component
with 1X refresh (tREFI to 7.8us) in the Extended Temperature Range.
b) If Self-Refresh operation is required in the Extended Temperature Range, then it is mandatory to either use the Manual Self-Refresh mode with
Extended Temperature Range capability (MR2 A6 = 0b and MR2 A7 = 1b) or enable the optional Auto Self-Refresh mode (MR2 A6 = 1b and MR2 A7
= 0b)
9.0 AC & DC Operating Conditions
9.1 Recommended DC Operating Conditions (SSTL-15)
Note :
1. Under all conditions V
DDQ
must be less than or equal to V
DD
.
2. V
DDQ
tracks with V
DD
. AC parameters are measured with V
DD
and V
DDQ
tied together.
Symbol Parameter Rating Units Notes
V
DD
Voltage on V
DD
pin relative to V
SS
-0.4 V ~ 1.975 V V 1,3
V
DDQ
Voltage on V
DDQ
pin relative to V
SS
-0.4 V ~ 1.975 V V 1,3
V
IN,
V
OUT
Voltage on any pin relative to V
SS
-0.4 V ~ 1.975 V V 1
T
STG
Storage Temperature -55 to +100 °C 1, 2
Symbol Parameter rating Unit Notes
T
OPER
Operating Temperature Range 0 to 95 °C 1, 2, 3
Symbol Parameter
Rating
Units Notes
Min. Typ. Max.
V
DD
Supply Voltage 1.425 1.5 1.575 V 1,2
V
DDQ
Supply Voltage for Output 1.425 1.5 1.575 V 1,2
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DDR3 SDRAM
Unbuffered SoDIMM
10.0 AC & DC Input Measurement Levels
10.1 AC & DC Logic Input Levels for Single-ended Signals
Single Ended AC and DC input levels for Command and Address
Note :
1. For input only pins except RESET
, V
REF
= V
REFCA
(DC)
2. See "Overshoot and Undershoot specifications" section.
3. The AC peak noise on V
REF
may not allow V
REF
to deviate from V
REF
(DC) by more than ± 1% V
DD
(for reference : approx. ± 15mV)
4. For reference : approx. V
DD
/2 ± 15mV
Single Ended AC and DC input levels for DQ and DM
Note :
1. For input only pins except RESET
, V
REF
= V
REFDQ
(DC)
2. See "Overshoot and Undershoot specifications" section.
3. The AC peak noise on V
REF
may not allow V
REF
to deviate from V
REF
(DC) by more than ± 1% V
DD
(for reference : approx. ± 15mV)
4. For reference : approx. V
DD
/2 ± 15mV
5. Single ended swing requirement for DQS - DQS
is 350mV (peak to peak). Differential swing requirement for DQS - DQS is 700mV (peak to peak).
Symbol Parameter
DDR3-800/1066 DDR3-1333
Unit Notes
Min. Max. Min. Max.
V
IH.CA
(DC)
DC input logic high
V
REF
+ 100 V
DD
V
REF
+ 100 V
DD
mV 1
V
IL.CA
(DC)
DC input logic low
V
SS
V
REF
- 100 V
SS
V
REF
- 100
mV 1
V
IH.CA
(AC)
AC input logic high
V
REF
+ 175
-
V
REF
+ 175
-mV1,2
V
IL.CA
(AC)
AC input logic low -
V
REF
- 175
-
V
REF
- 175
mV 1,2
V
IH.CA
(AC150)
AC input logic high
V
REF
+150
-
V
REF
+150
-mV1,2
V
IL.CA
(AC150)
AC input logic low -
V
REF
-150
-
V
REF
-150
mV 1,2
V
REFCA
(DC)
Reference Voltage for ADD,
CMD inputs
0.49*V
DD
0.51*V
DD
0.49*V
DD
0.51*V
DD
V3,4
Symbol Parameter
DDR3-1066 DDR3-1333
Unit Notes
Min. Max. Min. Max.
V
IH.DQ
(DC100)
DC input logic high
V
REF
+ 100 V
DD
V
REF
+ 100 V
DD
mV 1
V
IL.DQ
(DC100)
DC input logic low
V
SS
V
REF
- 100 V
SS
V
REF
- 100
mV 1
V
IH.DQ
(AC175)
AC input logic high
V
REF
+ 175
-
V
REF
+ 150
- mV 1,2,5
V
IL.DQ
(AC175)
AC input logic low -
V
REF
- 175
-
V
REF
- 150
mV 1,2,5
V
IH.DQ
(AC150)
AC input logic high
V
REF
+ 150
Note - - mV 1,2,5
V
IL.DQ
(AC150)
AC input logic low Note 2
V
REF
- 150
- - mV 1,2,5
V
REF
DQ
(DC)
I/O Reference Voltage(DQ)
0.49*V
DD
0.51*V
DD
0.49*V
DD
0.51*V
DD
V3,4
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DDR3 SDRAM
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10.2 V
REF
Tolerances.
The dc-tolerance limits and ac-noise limits for the reference voltages V
REFCA
and V
REFDQ
are illustrate in Figure 1. It shows a valid reference voltage
V
REF
(t) as a function of time. (V
REF
stands for V
REFCA
and V
REFDQ
likewise).
V
REF
(DC) is the linear average of V
REF
(t) over a very long period of time (e.g. 1 sec). This average has to meet the min/max requirements of V
REF
. Fur-
thermore V
REF
(t) may temporarily deviate from V
REF
(DC) by no more than ± 1% V
DD
.
Figure 1. Illustration of VREF(DC) tolerance and VREF ac-noise limits
The voltage levels for setup and hold time measurements V
IH
(AC), V
IH
(DC), V
IL
(AC) and V
IL
(DC) are dependent on V
REF
.
"V
REF
" shall be understood as V
REF
(DC), as defined in Figure 1.
This clarifies, that dc-variations of V
REF
affect the absolute voltage a signal has to reach to achieve a valid high or low level and therefore the time to
which setup and hold is measured. System timing and voltage budgets need to account for V
REF
(DC) deviations from the optimum position within the
data-eye of the input signals.
This also clarifies that the DRAM setup/hold specification and derating values need to include time and voltage associated with V
REF
ac-noise.
Timing and voltage effects due to ac-noise on V
REF
up to the specified limit (+/-1% of V
DD
) are included in DRAM timings and their associated deratings.
voltage
V
DD
V
SS
time
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10.3 AC and DC Logic Input Levels for Differential Signals
10.3.1 Differential Signals Definition
Figure 2. Definition of differential ac-swing and "time above ac level" tDVAC
10.3.2 Differential Swing Requirement for Clock (CK - CK) and Strobe (DQS - DQS)
Notes:
1. Used to define a differential signal slew-rate.
2. for CK - CK
use V
IH
/V
IL
(AC) of ADD/CMD and V
REFCA
; for DQS - DQS, DQSL - DQSL, DQSU - DQSU use V
IH
/V
IL
(AC) of DQs and V
REFDQ
; if a
reduced ac-high or ac-low level is used for a signal group, then the reduced level applies also here.
3. These values are not defined, however they single-ended signals CK, CK
, DQS, DQS, DQSL, DQSL, DQSU, DQSU need to be within the respective
limits (V
IH
(DC) max, V
IL
(DC)min) for single-ended signals as well as the limitations for overshoot and undershoot. Refer to "overshoot and Under-
sheet Specification"
Allowed time before ringback (tDVAC) for CK - CK
and DQS - DQS.
Symbol Parameter
DDR3-800/1066/1333
unit Note
min max
V
IHdiff
differential input high +0.2 note 3 V 1
V
ILdiff
differential input low note 3 -0.2 V 1
V
IHdiff
(AC)
differential input high ac
2 x (V
IH
(AC)-V
REF
)
note 3 V 2
V
ILdiff
(AC)
differential input low ac note 3
2 x (V
REF
- V
IL
(AC))
V2
Slew Rate [V/ns]
tDVAC [ps] @ |V
IH/Ldiff
(AC)| = 350mV tDVAC [ps] @ |V
IH/Ldiff
(AC)| = 300mV
min max min max
> 4.0 75 - 175 -
4.0 57 - 170 -
3.0 50 - 167 -
2.0 38 - 163 -
1.8 34 - 162 -
1.6 29 - 161 -
1.4 22 - 159 -
1.2 13 - 155 -
1.0 0 - 150 -
< 1.0 0 - 150 -
0.0
tDVAC
V
IH
.DIFF.MIN
half cycle
Differential Input Voltage (i.e. DQS-DQS, CK-CK)
time
tDVAC
V
IH
.DIFF.AC.MIN
V
IL
.DIFF.MAX
V
IL
.DIFF.AC.MAX
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10.3.3 Single-ended Requirements for Differential Signals
Each individual component of a differential signal (CK, DQS, DQSL, DQSU, CK, DQS, DQSL, or DQSU) has also to comply with certain requirements for
single-ended signals.
CK and CK
have to approximately reach V
SEH
min / V
SEL
max (approximately equal to the ac-levels ( V
IH
(AC) / V
IL
(AC) ) for ADD/CMD signals) in every
half-cycle.
DQS, DQSL, DQSU, DQS
, DQSL have to reach V
SEH
min / V
SEL
max (approximately the ac-levels ( V
IH
(AC) / V
IL
(AC) ) for DQ signals) in every half-cycle
proceeding and following a valid transition.
Note that the applicable ac-levels for ADD/CMD and DQ’s might be different per speed-bin etc. E.g. if V
IH
150(AC)/V
IL
150(AC) is used for ADD/CMD
signals, then these ac-levels apply also for the single-ended signals CK and CK
.
Figure 3. Single-ended requirement for differential signals
Note that while ADD/CMD and DQ signal requirements are with respect to V
REF
, the single-ended components of differential signals have a requirement
with respect to V
DD
/2; this is nominally the same. The transition of single-ended signals through the ac-levels is used to measure setup time. For single-
ended components of differential signals the requirement to reach V
SEL
max, V
SEH
min has no bearing on timing, but adds a restriction on the common
mode characteristics of these signals.
Single ended levels for CK, DQS, DQSL, DQSU, CK
, DQS, DQSL or DQSU
Notes:
1. For CK, CK
use V
IH
/V
IL
(AC) of ADD/CMD; for strobes (DQS, DQS, DQSL, DQSL, DQSU, DQSU) use V
IH
/V
IL
(AC) of DQs.
2. V
IH
(AC)/V
IL
(AC) for DQs is based on V
REFDQ
; V
IH
(AC)/V
IL
(AC) for ADD/CMD is based on V
REFCA
; if a reduced ac-high or ac-low level is used for a
signal group, then the reduced level applies also here
3. These values are not defined, however the single-ended signals CK, CK
, DQS, DQS, DQSL, DQSL, DQSU, DQSU need to be within the respective
limits (V
IH
(DC) max, V
IL
(DC)min) for single-ended signals as well as the limitations for overshoot and undershoot. Refer to "Overshoot and Undershoot
Specification"
Symbol Parameter
DDR3-800/1066/1333
Unit Notes
Min Max
V
SEH
Single-ended high-level for strobes
(V
DD
/2)+0.175
Note3 V 1, 2
Single-ended high-level for CK, CK
(V
DD
/2)+0.175
Note3 V 1, 2
V
SEL
Single-ended low-level for strobes Note3
(V
DD
/2)-0.175
V1, 2
Single-ended low-level for CK, CK
Note3
(V
DD
/2)-0.175
V1, 2
V
DD
or V
DDQ
V
SEH
min
V
DD
/2 or V
DDQ
/2
V
SEL
max
V
SEH
V
SS
or V
SSQ
V
SEL
CK or DQS
time
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10.3.4 Differential Input Cross Point Voltage
To guarantee tight setup and hold times as well as output skew parameters with respect to clock and strobe, each cross point voltage of differential input
signals (CK, CK
and DQS, DQS) must meet the requirements in below table. The differential input cross point voltage V
IX
is measured from the actual
cross point of true and complement signal to the mid level between of V
DD
and V
SS
.
Figure 4. V
IX
Definition
Cross point voltage for differential input signals (CK, DQS)
Note :
1. Extended range for V
IX
is only allowed for clock and if single-ended clock input signals CK and CK are monotonic, have a single-ended swing V
SEL
/
V
SEH
of at least V
DD
/2 ±250 mV, and the differential slew rate of CK-CK is larger than 3 V/ ns.
10.4 Slew Rate Definition for Single Ended Input Signals
See "Address / Command Setup, Hold and Derating" for single-ended slew rate definitions for address and command signals.
See "Data Setup, Hold and Slew Rate Derating" for single-ended slew rate definitions for data signals.
10.5 Slew rate definition for Differential Input Signals
Input slew rate for differential signals (CK, CK and DQS, DQS) are defined and measured as shown in below.
Differential input slew rate definition
Note : The differential signal (i.e. CK - CK
and DQS - DQS) must be linear between these thresholds
Figure 5. Differential input slew rate definition for DQS, DQS
and CK, CK
Symbol Parameter
DDR3-800/1066/1333
Unit Notes
Min Max
V
IX
Differential Input Cross Point Voltage relative to V
DD
/2 for CK,CK
-150 150 mV
-175 175 mV 1
V
IX
Differential Input Cross Point Voltage relative to V
DD
/2 for DQS,DQS
-150 150 mV
Description
Measured
Defined by
From To
Differential input slew rate for rising edge (CK-CK
and DQS-DQS)
V
ILdiffmax
V
IHdiffmin
V
IHdiffmin
- V
ILdiffmax
Delta TRdiff
Differential input slew rate for falling edge (CK-CK
and DQS-DQS)
V
IHdiffmin
V
ILdiffmax
V
IHdiffmin
- V
ILdiffmax
Delta TFdiff
V
DD
CK, DQS
V
DD
/2
CK, DQS
V
SS
V
IX
V
IX
V
IX
V
IHdiffmin
0
V
ILdiffmax
delta TRdiff
delta TFdiff
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11.0 AC & DC Output Measurement Levels
11.1 Single Ended AC and DC Output Levels
Single Ended AC and DC output levels
Note : 1. The swing of +/-0.1 x V
DDQ
is based on approximately 50% of the static single ended output high or low swing with a driver impedance of 40Ω
and an effective test load of 25Ω to V
TT
=V
DDQ
/2.
11.2 Differential AC and DC Output Levels
Differential AC and DC output levels
Note : 1. The swing of +/-0.2xV
DDQ
is based on approximately 50% of the static single ended output high or low swing with a driver impedance of 40Ω
and an effective test load of 25Ω to V
TT
=V
DDQ
/2 at each of the differential outputs.
11.3 Single-ended Output Slew Rate
With the reference load for timing measurements, output slew rate for falling and rising edges is defined and measured between V
OL
(AC) and V
OH
(AC)
for single ended signals as shown in below.
Single ended Output slew rate definition
Note : Output slew rate is verified by design and characterization, and may not be subject to production test.
Single ended output slew rate
Description : SR : Slew Rate
Q : Query Output (like in DQ, which stands for Data-in, Query-Output
se : Singe-ended Signals
For Ron = RZQ/7 setting
Figure 6. Single-ended output slew rate definition
Symbol Parameter DDR3-800/1066/1333 Units Notes
V
OH
(DC) DC output high measurement level (for IV curve linearity) 0.8 x V
DDQ
V
V
OM
(DC) DC output mid measurement level (for IV curve linearity) 0.5 x V
DDQ
V
V
OL
(DC) DC output low measurement level (for IV curve linearity) 0.2 x V
DDQ
V
V
OH
(AC) AC output high measurement level (for output SR) V
TT
+ 0.1 x V
DDQ
V1
V
OL
(AC) AC output low measurement level (for output SR) V
TT
- 0.1 x V
DDQ
V1
Symbol Parameter DDR3-800/1066/1333 Units Notes
V
OHdiff
(AC) AC differential output high measurement level (for output SR) +0.2 x V
DDQ
V1
V
OLdiff
(AC) AC differential output low measurement level (for output SR) -0.2 x V
DDQ
V1
Description
Measured
Defined by
From To
Single ended output slew rate for rising edge
V
OL
(AC) V
OH
(AC)
V
OH
(AC)-V
OL
(AC)
Delta TRse
Single ended output slew rate for falling edge
V
OH
(AC) V
OL
(AC)
V
OH
(AC)-V
OL
(AC)
Delta TFse
Parameter Symbol
DDR3-1066 DDR3-1333
Units
Min Max Min Max
Single ended output slew rate SRQse 2.5 5 2.5 5 V/ns
V
OH(AC)
V
OL(AC)
delta TRsedelta TFse
V
TT
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11.4 Differential Output Slew Rate
With the reference load for timing measurements, output slew rate for falling and rising edges is defined and measured between V
OLdiff
(AC) and
V
OHdiff
(AC) for differential signals as shown in below.
Differential Output slew rate definition
Note : Output slew rate is verified by design and characterization, and may not be subject to production test.
Differential Output slew rate
Description : SR : Slew Rate
Q : Query Output (like in DQ, which stands for Data-in, Query-Output
diff : Singe-ended Signals
Figure 7. Differential output slew rate definition
Description
Measured
Defined by
From To
Differential output slew rate for rising edge
V
OLdiff
(AC) V
OHdiff
(AC)
V
OHdiff
(AC)-V
OLdiff
(AC)
Delta TRdiff
Differential output slew rate for falling edge
V
OHdiff
(AC) V
OLdiff
(AC)
V
OHdiff
(AC)-V
OLdiff
(AC)
Delta TFdiff
Parameter Symbol
DDR3-1066 DDR3-1333
Units
Min Max Min Max
Differential output slew rate SRQse 5 10 5 10 V/ns
V
OHdiff
(AC)
V
OLdiff
(AC)
delta TRdiffdelta TFdiff
V
TT
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DDR3 SDRAM
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12.0 IDD specification definition
Symbol Description
IDD0
Operating One Bank Active-Precharge Current
CKE: High; External clock: On; tCK, nRC, nRAS, CL: AC Timing Table ; BL: 8
a)
; AL: 0; CS: High between ACT and PRE; Command, Address, Bank
Address Inputs: partially toggling ; Data IO: FLOATING; DM:stable at 0; Bank Activity: Cycling with one bank active at a time: 0,0,1,1,2,2,... ; Output Buffer
and RTT: Enabled in Mode Registers
b)
; ODT Signal: stable at 0
IDD1
Operating One Bank Active-Read-Precharge Current
CKE: High; External clock: On; tCK, nRC, nRAS, nRCD, CL: AC Timing Table ; BL: 8
a)
; AL: 0; CS: High between ACT, RD and PRE; Command, Address,
Bank Address Inputs, Data IO: partially toggling ; DM:stable at 0; Bank Activity: Cycling with one bank active at a time: 0,0,1,1,2,2,... ; Output Buffer and
RTT: Enabled in Mode Registers
b)
; ODT Signal: stable at 0;
IDD2N
Precharge Standby Current
CKE: High; External clock: On; tCK, CL: AC Timing Table ; BL: 8
a)
; AL: 0; CS: stable at 1; Command, Address, Bank Address Inputs: partially toggling ;
Data IO: FLOATING; DM:stable at 0; Bank Activity: all banks closed; Output Buffer and RTT: Enabled in Mode Registers
b)
; ODT Signal: stable at 0
DD2NT
Precharge Standby ODT Current
CKE: High; External clock: On; tCK, CL: AC Timing Table ; BL: 8
a)
; AL: 0; CS: stable at 1; Command, Address, Bank Address Inputs: partially toggling ;
Data IO: FLOATING;DM:stable at 0; Bank Activity: all banks closed; Output Buffer and RTT: Enabled in Mode Registers
b)
; ODT Signal: toggling
DDQ2NT
(optional)
Precharge Standby ODT IDDQ Current
Same definition like for IDD2NT, however measuring IDDQ current instead of IDD current
IDD2P0
Precharge Power-Down Current Slow Exit
CKE: Low; External clock: On; tCK, CL: AC Timing Table ; BL: 8
a)
; AL: 0; CS: stable at 1; Command, Address, Bank Address Inputs: stable at 0; Data IO:
FLOATING; DM:stable at 0; Bank Activity: all banks closed; Output Buffer and RTT: Enabled in Mode Registers
b)
; ODT Signal: stable at 0; Precharge
Power Down Mode: Slow Exit
c)
IDD2P1
Precharge Power-Down Current Fast Exit
CKE: Low; External clock: On; tCK, CL: AC Timing Table ; BL: 8
a)
; AL: 0; CS: stable at 1; Command, Address, Bank Address Inputs: stable at 0; Data
IO: FLOATING; DM:stable at 0; Bank Activity: all banks closed; Output Buffer and RTT: Enabled in Mode Registers
b)
; ODT Signal: stable at 0; Precharge
Power Down Mode: Fast Exit
c)
IDD2Q
Precharge Quiet Standby Current
CKE: High; External clock: On; tCK, CL: AC Timing Table ; BL: 8
a)
; AL: 0; CS: stable at 1; Command, Address, Bank Address Inputs: stable at 0; Data IO:
FLOATING; DM:stable at 0;Bank Activity: all banks closed; Output Buffer and RTT: Enabled in Mode Registers
b)
; ODT Signal: stable at 0
IDD3N
Active Standby Current
CKE: High; External clock: On; tCK, CL: AC Timing Table ; BL: 8
a)
; AL: 0; CS: stable at 1; Command, Address, Bank Address Inputs: partially toggling
according to Table 34 ; Data IO: FLOATING; DM:stable at 0;Bank Activity: all banks open; Output Buffer and RTT: Enabled in Mode Registers
b)
; ODT Sig-
nal: stable at 0
IDD3P
Active Power-Down Current
CKE: Low; External clock: On; tCK, CL: AC Timing Table ; BL: 8
a)
; AL: 0; CS: stable at 1; Command, Address, Bank Address Inputs: stable at 0; Data IO:
FLOATING;DM:stable at 0; Bank Activity: all banks open; Output Buffer and RTT: Enabled in Mode Registers
b)
; ODT Signal: stable at 0
IDD4R
Operating Burst Read Current
CKE: High; External clock: On; tCK, CL: AC Timing Table ; BL: 8
a)
; AL: 0; CS: High between RD; Command, Address, Bank Address Inputs: partially tog-
gling ; Data IO: seamless read data burst with different data between one burst and the next one according to Table 36 ; DM:stable at 0; Bank Activity: all
banks open, RD commands cycling through banks: 0,0,1,1,2,2,... (see Table 7 on page 10); Output Buffer and RTT: Enabled in Mode Registers
b)
; ODT
Signal: stable at 0
IDDQ4R
(optional)
Operating Burst Read IDDQ Current
Same definition like for IDD4R, however measuring IDDQ current instead of IDD current
IDD4W
Operating Burst Write Current
CKE: High; External clock: On; tCK, CL: AC Timing Table ; BL: 8
a)
; AL: 0; CS: High between WR; Command, Address, Bank Address Inputs: partially tog-
gling ; Data IO: seamless write data burst with different data between one burst and the next one ; DM: stable at 0; Bank Activity: all banks open, WR com-
mands cycling through banks: 0,0,1,1,2,2,... ; Output Buffer and RTT: Enabled in Mode Registers
b)
; ODT Signal: stable at HIGH
IDD5B
Burst Refresh Current
CKE: High; External clock: On; tCK, CL, nRFC: AC Timing Table ; BL: 8
a)
; AL: 0; CS: High between REF; Command, Address, Bank Address Inputs: par-
tially toggling according to Table 38 ; Data IO: FLOATING;DM:stable at 0; Bank Activity: REF command every nRFC (see Table 38); Output Buffer and RTT:
Enabled in Mode Registers
b)
; ODT Signal: stable at 0
IDD6
Self Refresh Current: Normal Temperature Range
TCASE: 0 - 85°C; Auto Self-Refresh (ASR): Disabled
d)
; Self-Refresh Temperature Range (SRT): Normal
e)
; CKE: Low; External clock: Off; CK and CK:
LOW; CL: AC Timing Table ; BL: 8
a)
; AL: 0; CS, Command, Address, Bank Address, Data IO: FLOATING;DM:stable at 0; Bank Activity: Self-Refresh opera-
tion; Output Buffer and RTT: Enabled in Mode Registers
b)
; ODT Signal: FLOATING
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a) Burst Length: BL8 fixed by MRS: set MR0 A[1,0]=00B
b) Output Buffer Enable: set MR1 A[12] = 0B; set MR1 A[5,1] = 01B; RTT_Nom enable: set MR1 A[9,6,2] = 011B; RTT_Wr enable: set MR2 A[10,9] = 10B
c) Precharge Power Down Mode: set MR0 A12=0B for Slow Exit or MR0 A12=1B for Fast Exit
d) Auto Self-Refresh (ASR): set MR2 A6 = 0B to disable or 1B to enable feature
e) Self-Refresh Temperature Range (SRT): set MR2 A7=0B for normal or 1B for extended temperature range
f) Refer to DRAM supplier data sheet and/or DIMM SPD to determine if optional features or requirements are supported by DDR3 SDRAM device
g) IDD current measure method and detail patterns are described on DDR3 component datasheet
Symbol Description
IDD6ET
Self-Refresh Current: Extended Temperature Range (optional)
f)
TCASE: 0 - 95°C; Auto Self-Refresh (ASR): Disabled
d)
; Self-Refresh Temperature Range (SRT): Extended
e)
; CKE: Low; External clock: Off; CK and CK:
LOW; CL: AC Timing Table ; BL: 8
a)
; AL: 0; CS, Command, Address, Bank Address, Data IO: FLOATING;DM:stable at 0; Bank Activity: Extended Tempera-
ture Self-Refresh operation; Output Buffer and RTT: Enabled in Mode Registers
b)
; ODT Signal: FLOATING
IDD6TC
Auto Self-Refresh Current (optional)
f)
TCASE: 0 - 95°C; Auto Self-Refresh (ASR): Enabled
d)
; Self-Refresh Temperature Range (SRT): Normal
e)
; CKE: Low; External clock: Off; CK and CK:
LOW; CL: AC Timing Table ; BL: 8
a)
; AL: 0; CS, Command, Address, Bank Address, Data IO: FLOATING; DM:stable at 0; Bank Activity: Auto
Self-Refresh operation; Output Buffer and RTT: Enabled in Mode Registers
b)
; ODT Signal: FLOATING
IDD7
Operating Bank Interleave Read Current
CKE: High; External clock: On; tCK, nRC, nRAS, nRCD, nRRD, nFAW, CL: AC Timing Table; BL: 8
a)
; AL: CL-1; CS: High between ACT and RDA; Com-
mand, Address, Bank Address Inputs: partially toggling ; Data IO: read data bursts with different data between one burst and the next one ; DM:stable at 0;
Bank Activity: two times interleaved cycling through banks (0, 1, ...7) with different addressing, see Table 39 ; Output Buffer and RTT: Enabled in Mode Reg-
isters
b)
; ODT Signal: stable at 0
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DDR3 SDRAM
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12.1 IDD SPEC Table
M471B5273BH1 : 4GB (512Mx64) Module
13.0 Input/Output Capacitance
13.1 2Rx16 1GB SoDIMM
Symbol
CF8
(DDR3-1066@CL=7)
CH9
(DDR3-1333@CL=9)
Unit Notes
IDD0 880 920 mA
IDD1 1000 1040 mA
IDD2P0(slow exit) 192 192 mA
IDD2P1(fast exit) 480 560 mA
IDD2N 640 640 mA
IDD2Q 560 640 mA
IDD3P(fast exit) 560 560 mA
IDD3N 760 800 mA
IDD4R 1320 1480 mA
IDD4W 1360 1520 mA
IDD5B 1800 1800 mA
IDD6 192 192 mA
IDD7 2160 2560 mA
M471B5273BH1
Parameter Symbol
DDR3-1066 DDR3-1333
Units Notes
Min Max Min Max
Input/output capacitance
(DQ, DM, DQS, DQS
, TDQS, TDQS)
CIO - TBD - TBD pF
Input capacitance
(CK and CK)
CCK - TBD - TBD pF
Input capacitance
(All other input-only pins)
CI - TBD - TBD pF
Input/output capacitance of ZQ pin CZQ - TBD - TBD pF
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Samsung M471B5273BH1-CF8 Specification

Samsung
Brand
Samsung
Model
M471B5273BH1-CF8
Category
Memory modules
Type
Specification
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