TEKBOX TBMDA5 User manual

Brand: TEKBOX

Model: TBMDA5

Type: User manual

TEKBOX TBMDA5 is a modulated wideband power amplifier designed to provide the necessary power, bandwidth, and modulation for conducted immunity testing using coupling/decoupling networks (CDNs) in the frequency range of 150 kHz to 400 MHz. With a 1 dB compression point of up to 2.5W and built-in AM and PM modulators, it can generate test levels according to ISO/EN 61000-4-6 standards. The amplifier features CW, 1 kHz AM, 1 kHz PM, and 217 Hz PM modulation capabilities, making it suitable for various immunity testing applications, including radiated and conducted immunity testing.

V1.0

TBMDA5

Modulated Wideband Power Amplifier

1 Introduction

Tekbox provides a complete solution for affordable pre-compliance conducted immunity testing:

Coupling Decoupling Networks along with suitable calibration adapters and 150 Ohm transitions; BCI probes,

suitable modulated wideband power amplifiers and EMCview PRO software. A third-party spectrum analyzer

with tracking generator serves as signal source.

The TBMDA5 modulated amplifier provides the necessary power, bandwidth and modulation for conducted

immunity testing using CDNs in the frequency range from 150 kHz to 400 MHz. It is designed to be driven by the

tracking generator output of spectrum analyzers. With a 1 dB compression point of up to 2.5W in the frequency

range 150 kHz to 400 MHz it can generate test levels class 1 and class 2 according to ISO / EN 61000-4-6. A

built in AM- modulator enables use of tracking generators as signal source. The TBMDA5 has sufficient gain to

achieve maximum output power with 0 dBm provided by a spectrum analyzer tracking generator.

Besides 1 kHz, 80% AM, the TBMDA5 provides built in modulation capability to generate 1 kHz, 50% duty cycle

PM signals. In PM mode, the TBMDA5 can also generate a 217 Hz Signal with 12.5% duty cycle in order to

simulate mobile phone TDMA noise.

Picture 1 – TBMDA5 modulated wideband driver amplifier, front view

Picture 2 – TBMDA5 modulated wideband driver amplifier, rear view

V1.0

TBMDA5

Modulated Wideband Power Amplifier

Application:

General-purpose wideband RF power amplifier

Wideband RF power amplifier for conducted immunity testing driving CDNs or BCI-probes

Wideband RF power amplifier for radiated immunity testing, driving near field probes

Wideband RF power amplifier for radiated immunity testing, driving TEM Cells

Features:

2 Electrical Specifications

Technical Data:

Input / Output: 50 Ohm, N female

Supply Voltage range: 110 V…240 V

Supply power consumption: 19 W @ 220V

Operating temperature range: -20°C to 50°C

Frequency range: 150 kHz – 400 MHz, usable from 100 kHz to 1.2 GHz

Small signal gain: 38 dB typ.

Gain flatness 150 kHz – 400 MHz / Pin = -5 dBm: 3.5 dB typ.

Saturated output power @ 150 kHz / Pin = 0 dBm: 32.6 dBm (1.8 W) typ.

Saturated output power @ 500 kHz / Pin = 0 dBm: 36 dBm (4 W) typ.

Saturated output power @ 1 MHz / Pin = 0 dBm: 36.1 dBm (4.1 W) typ.

Saturated output power @ 10 MHz / Pin = 0 dBm: 37.8 dBm (6 W) typ.

Saturated output power @ 100 MHz / Pin = 0 dBm: 36.4 dBm (4.4 W) typ.

Saturated output power @ 250 MHz / Pin = 0 dBm: 36 dBm (4 W) typ.

Saturated output power @ 400 MHz / Pin = 0 dBm: 33.7 dBm (2.3 W) typ.

Saturated output power @ 750 MHz / Pin = 0 dBm: 33.2 dBm (2.1 W) typ.

Saturated output power @ 1 GHz / Pin = 0 dBm: 34.8 dBm (3 W) typ.

Saturated output power @ 1.1 GHz / Pin = 0 dBm: 31.1 dBm (1.3 W) typ.

Saturated output power @ 1.2 GHz / Pin = 0 dBm: 27.3 dBm (0.5 W) typ.

1dB output compression point @ 150 kHz: +29.6 dBm typ. (Pin: -9 dBm)

1dB output compression point @ 500 kHz: +32.9 dBm typ. (Pin: -6 dBm)

1dB output compression point @ 1 MHz: +33.1 dBm typ. (Pin: -5 dBm)

CW amplifier (modulation off)

1 kHz, 80% AM modulation

1 kHz, 50% duty cycle pulse modulation

217 Hz, 12.5% duty cycle pulse modulation

V1.0

TBMDA5

Modulated Wideband Power Amplifier

1dB output compression point @ 10 MHz: +33.8 dBm typ. (Pin: -6 dBm)

1dB output compression point @ 100 MHz: +33.6 dBm typ. (Pin: -4 dBm)

1dB output compression point @ 250 MHz: +33.1 dBm typ. (Pin: -6 dBm)

1dB output compression point @ 400 MHz: +31.5 dBm typ. (Pin: -6 dBm)

1dB output compression point @ 750 MHz: +30.94 dBm typ. (Pin: -4 dBm)

1dB output compression point @ 1 GHz: +31.8 dBm typ. (Pin: -5 dBm)

1dB output compression point @ 1.1 GHz: +27.9 dBm typ. (Pin: -5 dBm)

1dB output compression point @ 1.2 GHz: +25.2 dBm typ. (Pin: -4 dBm)

2nd harmonic, 100 MHz, Pout=36dBm: < - 15 dBc typ.

2nd harmonic, 100 MHz, Pout=30dBm: < - 22 dBc typ.

3rd harmonic, 100 MHz, Pout=36dBm: < - 23 dBc typ.

3rd harmonic, 100 MHz, Pout=30dBm: < - 33 dBc typ.

Total harmonic distortion:

5.2% @100MHz, Pout=27dBm typ.

8.5% @100 MHz, Pout=30 dBm typ.

14.5% @100 MHz, Pout=33 dBm typ.

20.3% @100 MHz, Pout=36 dBm typ.

Third order output intercept point: +43dBm, @100 MHz, ∆ f = 2MHz, typ.

Noise figure @ 100 MHz: 6.1 dB

Internal modulation frequency AM: 1 kHz ±20%

Internal modulation frequencies PM: 1 kHz ±20%, 217 Hz ±20%

Duty cycle, PM: 50% ±10% @ 1 kHz; 12.5% ±20% @ 217 Hz

Maximum ratings:

Maximum input power: +3 dBm

The output of the TBMDA5 is quite tolerant to output mismatch, however open or shorted load is not recommended,

as it potentially can cause damage to the output transistor. When driving near field probes, current probes or any

load of unknown impedance, it is highly recommended to insert a 3dB attenuator at the output of the amplifier in

order to protect the output stage.

V1.0

TBMDA5

Modulated Wideband Power Amplifier

Gain flatness:

Small Signal Performance (@ Pin = - 10 dBm):

Frequency [MHz]

0.15

0.5

100

250

400

500

750

1000

1100

1200

Output power [dBm]

28.9

29.7

29.1

30.5

27.9

28.2

29.8

28.1

27.7

26.1

27.7

23.9

20.3

Gain [dB]

38.9

39.7

39.1

40.5

37.9

38.2

39.8

38.1

37.7

36.1

37.7

33.9

30.3

Table 1 – TBMDA5 small signal gain, typ.

1 dB compression point:

Frequency [MHz]

0.15

0.5

100

250

400

500

750

1000

1100

1200

Output power [dBm]

29.6

32.9

33.1

33.8

33.6

33.1

31.5

31.8

27.9

25.2

Pin [dBm]

-9

-6

-5

-6

-5

-6

-4

-5

-4

Table 2 – TBMDA5, 1 dB compression point versus frequency, typ.

Saturation (@ Pin = 0 dBm):

Frequency [MHz]

0.15

0.5

100

250

400

500

750

1000

1100

1200

Output power [dBm]

32.6

36.1

37.8

36.1

36.4

33.7

32.9

33.2

34.8

31.1

27.3

Gain [dB]

32.6

36.1

37.8

36.1

36.4

33.7

32.9

33.2

34.8

31.1

27.3

Table 3 – TBMDA5, Saturation versus frequency, typ.

V1.0

TBMDA5

Modulated Wideband Power Amplifier

Modulation:

Zero span, 10 ms sweep time, peak detector

Figure 1 – 1 kHz, 80 % AM, envelope, 100 MHz, Pout = 34 dBm peak;

Figure 2 – 1 kHz, 50 % PM envelope, 100 MHz, Pout = 34 dBm peak

Figure 3 – 217 Hz, 12.5 % PM envelope, 100 MHz, Pout = 34 dBm peak

V1.0

TBMDA5

Modulated Wideband Power Amplifier

3 Applications - radiated immunity

Immunity testing using a TEM cell

Figure 4 – immunity testing set up

Immunity testing using near field probes

Figure 5 – immunity testing set up to locate susceptible areas on PCBAs

Radiated immunity EMC pre-compliance is typically a 2-step procedure. First, a TEM cell is used to investigate

for immunity issues of the DUT. In case of any failure, near-field probes will be used to locate the sensitive

circuitry on the PCBA.

V1.0

TBMDA5

Modulated Wideband Power Amplifier

TEM Cell field strength

A typical pre-compliance set up for immunity testing is typically not equipped with an E-field probe to measure the

real field strength inside the TEM cell. However, the field strength can be calculated with sufficient accuracy for

EMC pre-compliance set-ups.

The E-field (V/m) between septum and lower (upper) wall of a TEM cell is E = V/d where V is the RMS voltage of

the applied signal and d is the distance between septum and lower (upper) wall. This is based on the simplified

assumption that the E field would be perfectly homogenous/evenly distributed. A more practical formula is E =

V*Cor/d where Cor is a correction factor for the average field strength over the volume of the DUT derived from

the analysis of the field distribution over the cross section of the cell.

Assuming the DUT is placed in the center of the cell and in the middle between bottom wall and septum, we can

use the simplified formula with sufficient accuracy.

TBTC0: d = 2.8 cm -> E[V/m] = (√(P*50Ω))*35.7

TBTC1: d = 5 cm -> E[V/m] = (√(P*50Ω))*20

TBTC2: d = 10 cm -> E[V/m] = (√(P*50Ω))*10

TBTC3: d = 15 cm -> E[V/m] = (√(P*50Ω))*6.66

The power P in the formulas above hast to be entered in [Watt]

P [W] = 0.001*(10^ (P[dBm]/10))

Frequency [MHz]

Input power

[dBm]

Output power

[dBm]

Field strength

TBTC0 [V/m]

Field strength

TBTC1 [V/m]

Field strength

TBTC2 [V/m]

Field strength

TBTC3 [V/m]

0.15

-3

32.5

337

189

0.5

-3

34.8

439

246

123

-3

34.5

424

237

119

-3

35.8

492

275

138

100

-3

34.2

409

229

115

250

-3

34.8

439

246

123

500

-3

32.4

333

186

750

-3

31.8

311

174

1000

-3

33.3

369

207

103

Table 4 – calculated field strength for the TBMDA5 driving Tekbox TEM cells

The above output power is the RMS output power in case of a CW signal. Note that in case of 80% AM

modulation, the RMS power of the modulated signal will be 5.1 dB lower than the RMS power of the CW signal.

V1.0

TBMDA5

Modulated Wideband Power Amplifier

4 Applications - conducted immunity, using CDNs

EN 61000-4-6 calibration set up using EMCview PRO

▪ Test Level 1: 1V RMS, 1 kHz / 80% AM modulated

▪ Test Level 2: 3V RMS, 1 kHz / 80% AM modulated

▪ Test Level 3: 10V RMS, 1 kHz / 80% AM modulated

▪ Test Level X: special (unspecified)

The specified test levels are open circuit voltages at the EUT port of the CDN.

The voltages measured during calibration must be multiplied by 3 to allow for the 50 Ohm to 150 Ohm conversion

and again by 2 to reach the open circuit voltage.

Hence, the measured voltage at the output of the 150 Ohm to 50 Ohm adapter is 1/6 th the voltage of the desired

stress level. In logarithmic figures, the measured voltage is 15.5 dB lower than the open circuit voltage.

Example: Test level 2

U0= 3V RMS open circuit voltage at the EUT port of the CDN = 3V/6 = 0.5V RMS at the output of the 100 Ohm to

50 Ohm adapter.

The required power at the output of the modulated amplifier is:

U0/6 [dBm] + CDN insertion loss + 6 dB (Attenuator) + 5.1 dB (80% AM RMS)

Assuming 10 dB insertion loss for the CDN, the required RF power is:

7 dBm + 10 dB + 6 dB + 5.1 dB = 28.1 dBm = 0.65 Watt

During calibration, EMCview Pro will make a stepped sweep, for each frequency adjusting the tracking generator

level in order to achieve 7 dBm + 5.1 dB -30 dB = -17.9 dBm at the spectrum analyzer input. The tracking

generator level table will then be used to set levels during the actual immunity test.

V1.0

TBMDA5

Modulated Wideband Power Amplifier

The typical insertion loss of a CDN with attached 150 Ohm to 50 Ohm adapter is 10 dB.

Adding the 6 dB attenuator and 5.1 dB for the AM RMS conversion results in a quasi-insertion loss of 10 dB + 6

dB + 5.1 dB = 21.1 dB.

For open circuit voltages of 1V, 3V and 10V, the corresponding power at the output of the 150 Ohm to 50 Ohm

adapter is -2.6 dBm, 7 dBm, 17.4 dBm RMS CW. Add 5.1 dB to cover the RMS power of 80% AM modulation.

Consequently, the required power at the input of the 6 dB attenuator for class 1/2/3 is 18.5 dBm / 28.1 dBm / 38.5

dBm.

The table below reflects the insertion loss versus frequency of a real CDN in order to set the required input power

for the TBMDA5.

Frequency

[MHz]

TBMDA5 output power

to achieve stress level 1

[dBm]

Corresponding

TBMDA5 input

power [dBm]

TBMDA5 output power

to achieve stress level 2

[dBm]

Corresponding

TBMDA5 input

power [dBm]

0.15

17.3

-22 dBm

27.3

-12 dBm

0.5

16.6

-23 dBm

26.6

-13 dBm

16.9

-22 dBm

26.9

-12 dBm

17.8

-22 dBm

27.8

-12 dBm

100

18.7

-19 dBm

28.7

-9 dBm

230

-19 dBm

-9 dBm

Table 4 - measured input power settings for the TBMDA5 in order to achieve stress level 1 and 2

The maximum output power of the TBMDA5 is approximately 3 dB short with respect to power level 3. As a

compromise, the 6 dB attenuator could be replaced by a 3 dB attenuator.

EMCview PRO has the capability to automatically adjust the tracking generator level in order to achieve the

desired stress level voltage. The output is a calibration table, which is loaded and applied during the immunity

test.

EN 61000-4-6 immunity test set up using EMCview PRO

V1.0

TBMDA5

Modulated Wideband Power Amplifier

5 Applications - conducted immunity, using BCI probes

EN 61000-4-6 specifies stress levels in terms of voltage and calibrates the immunity set up using a 300 Ohm

loop. Other standards specify stress levels in terms of injected current.

EN 61000-4-6 300 Ohm loop BCI calibration set up using EMCview PRO

▪ Test Level 1: 1V RMS, 1 kHz / 80% AM modulated

▪ Test Level 2: 3V RMS, 1 kHz / 80% AM modulated

▪ Test Level 3: 10V RMS, 1 kHz / 80% AM modulated

▪ Test Level X: special (unspecified)

The specified test levels are open circuit voltages at the output of the calibration fixture.

The voltages measured during calibration must be multiplied by 3 to allow for the 50 Ohm to 150 Ohm conversion

and again by 2 to reach the open circuit voltage.

Hence, the measured voltage at the output of the 150 Ohm to 50 Ohm adapter is 1/6th the voltage of the desired

stress level. In logarithmic figures, the measured voltage is 15.5 dB lower than the open circuit voltage.

Example: Test level 2 U0= 3V RMS open circuit voltage at the output of the calibration fixture = 3V/6 = 0.5V RMS

at the output of the 100 Ohm to 50 Ohm adapter.

The required power at the output of the modulated amplifier is:

U0/6 [dBm] + BCI probe insertion loss + 6 dB (Attenuator) + 5.1 dB (80% AM RMS)

Assuming 16 dB insertion loss for the BCI probe in a 300 Ohm loop, the required RF power is:

7 dBm + 16 dB + 6 dB + 5.1 dB = 34.1 dBm = 2.6 Watt

During calibration, EMCview Pro will make a stepped sweep, for each frequency adjusting the tracking generator

level in order to achieve 7 dBm -30 dB = -23 dBm at the spectrum analyzer input. The tracking generator level

table will then be used to set levels during the actual immunity test.

V1.0

TBMDA5

Modulated Wideband Power Amplifier

EN 61000-4-6 immunity test set up using a BCI probe and EMCview PRO

ISO 11452-4 / MIL-STD-461 / DO 160A calibration set up using EMCview PRO

The automotive immunity standard ISO 11452-4 as well as immunity standards for defense and avionic products

specify stress levels in terms of induced disturbance current.

Traditional calibration and test methods use current monitoring probes in order to create a control loop, thereby

maintaining the required disturbance current. Levelling loops can be fooled by cable resonances. High

impedance resonances cause the RF amplifiers output power to raise, in order to achieve the specified

disturbance current. Similarly, low impedance resonances may significantly reduce the RF amplifiers output

power. This situation is unrealistic of most real-life electromagnetic environments and could create a severe

over-test or under-test situation.

In order to get around the over-test / under-test problems associated with the closed loop test method, the

standards offer the substitution method (open loop), where the disturbance current is set by measuring current

induced into a 100 Ohm loop. Forward and reflected power is measured using a directional coupler while setting

the RF power to achieve the required disturbance current levels into the 50 Ohm load. During actual immunity

test, the forward power level is set according to the value recorded during calibration.

Substitution calibration method set up for pre-compliance purpose:

V1.0

TBMDA5

Modulated Wideband Power Amplifier

Example: Test level I – 60 mA

A power of 22.6 dBm is required to achieve a current of 60 mA in a 50 Ohm load.

Assume 8dB insertion loss for a typical BCI probe in a 100 Ohm loop.

Assume 1 dB insertion loss for the directional coupler

The required power at the output of the modulated amplifier is:

Test level [dBm] + BCI probe insertion loss + 6 dB (Attenuator) + 5.1 dB (80% AM RMS)

22.6 dBm + 8 dB + 1 dB + 5.1 dB = 36,7 dBm = 4.7 W

Example: Test level IV – 200 mA

A power of 33 dBm is required to achieve a current of 200 mA in a 50 Ohm load.

Assume 8dB insertion loss for a typical BCI probe in a 100 Ohm loop.

Assume 1 dB insertion loss for the directional coupler

The required power at the output of the modulated amplifier is:

Test level [dBm] + BCI probe insertion loss + 6 dB (Attenuator) + 5.1 dB (80% AM RMS)

33 dBm + 8 dB + 1 dB + 5.1 dB = 47.1 dBm = 51.3 W

ISO 11452-4 / MIL-STD-461 / DO 160A immunity test set up using EMCview PRO

Refer to the standards for detailed drawings of the corresponding test set ups.

6 PC Software for immunity testing

Tekbox provides two software versions for EMC pre-compliance measurements

EMCview provides a feature to control the tracking generator output frequency and level and carry out sweeps

with constant tracking generator level.

EMCview PRO provides a more sophisticated feature, which is able to carry out calibration sweeps for CDN and

BCI based set ups. The resulting calibration file is used to set the tracking generator level during the immunity test

sweep.

Tekbox EMCview currently supports Rigol, Siglent, Owon, R&S FPC and FPH series spectrum analyzers.

V1.0

TBMDA5

Modulated Wideband Power Amplifier

Figure 11 – screenshot of the tracking generator control feature of EMCview / EMCview Pro

Figure 12 – screenshot of the immunity test feature of EMCview Pro

V1.0

TBMDA5

Modulated Wideband Power Amplifier

WARNING:

Never connect the output of the TBMDA5 directly to the input of a

spectrum analyzer. Check the maximum input ratings of the

spectrum analyzer and protect it with an appropriate attenuator.

Open or shorted load is not recommended, potentially can cause

damage of the RF output stage.

Example:

Rigol DSA815 – maximum input power rating: +20dBm

7 Ordering Information

Part Number

Description

TBMDA5-EU

modulated power amplifier, 2 pcs 75cm N-male to N-male cables, 1 pc 6 dB attenuator, 1

pc 30dB / 10W attenuator with N-connectors, C13 Schuko power cord

TBMDA5-US

modulated power amplifier, 2 pcs 75cm N-male to N-male cables, 1 pc 30dB / 10W

attenuator with N-connectors, C13 US power cord

TBMDA5-UK

modulated power amplifier, 2 pcs 75cm N-male to N-male cables, 1 pc 6 dB attenuator, 1

pc 30dB / 10W attenuator with N-connectors, C13 English power cord

TBMDA5-AU

modulated power amplifier, 2 pcs 75cm N-male to N-male cables, 1 pc 6 dB attenuator, 1

pc 30dB / 10W attenuator with N-connectors, C13 Australian power cord

Table 5 – Ordering Information

8 History

Version

Date

Author

Changes

V1.0

5.10.2022

Mayerhofer

Creation of the document

Table 6 – History

www.tekbox.com

TekBox Digital Solutions Vietnam Pte. Ltd.

Factory 4, F5, Lot I-3B-1, Saigon Hi-Tech Park, Tan Phu Ward, District 9, Ho Chi Minh City, Vietnam

TEKBOX TBMDA5 User manual

TEKBOX TBMDA5 User manual

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