Panasonic Network Card 2SC2480 User manual

Brand: Panasonic

Model: Network Card 2SC2480

Type: User manual

This manual is also suitable for

2SC2480

Transistors

Publication date: June 2006 SJC00116CED

2SC2480

Silicon NPN epitaxial planar type

For high-frequency amplification/oscillation/mixing

■ Features

• High transition frequency f

• Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing

■ Absolute Maximum Ratings T

= 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

CBO

30 V

Collector-emitter voltage (Base open) V

CEO

20 V

Emitter-base voltage (Collector open) V

EBO

Collector current I

50 mA

Collector power dissipation P

150 mW

Junction temperature T

150 °C

Storage temperature T

stg

−55 to +150 °C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

CBO

= 100 µA, I

= 030 V

Emitter-base voltage (Collector open) V

EBO

= 10 µA, I

= 03V

Base-emitter voltage V

= 10 V, I

= −2 mA 720 mV

Forward current transfer ratio h

= 10 V, I

= −2 mA 25 250 

Transition frequency

= 10 V, I

= −15 mA, f = 200 MHz 800 1

300 1

600 MHz

Reverse transfer capacitance C

= 6 V, I

= 0, f = 1 MHz 0.8 pF

(Common base)

Reverse transfer capacitance C

= 10 V, I

= −1 mA, f = 10.7 MHz 1.0 1.5 pF

(Common emitter)

Power gain G

= 10 V, I

= −1 mA, f = 200 MHz 20 dB

Unit: mm

■ Electrical Characteristics T

= 25°C ± 3°C

1: Base

2: Emitter

3: Collector

JEITA: SC-59A

Mini3-G1 Package

0.40

+0.10

–0.05

(0.65)

1.50

+0.25

–0.05

2.8

+0.2

–0.3

(0.95) (0.95)

1.9

±0.1

2.90

+0.20

–0.05

0.16

+0.10

–0.06

0.4±0.2

5˚

10˚

0 to 0.1

1.1

+0.2

–0.1

1.1

+0.3

–0.1

Marking Symbol: R

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

: Rank classification

Rank T S No-rank

800 to 1

400 1

000 to 1

600 800 to 1

600

Marking symbol RT RS R

Product of no-rank is not classified and have no indication for rank.

This product complies with the RoHS Directive (EU 2002/95/EC).

2SC2480

SJC00116CED

 V

 I

 T

 V

 I

CE(sat)

 I

 V

0 16040 12080

240

200

160

120

Ambient temperature T

(°C)

Collector power dissipation P

(mW)

0481216

= 300 µA

50 µA

100 µA

150 µA

200 µA

250 µA

Collector-emitter voltage V

(V)

Collector current I

(mA)

= 25°C

0 500400300200100

Base current I

(µA)

Collector current I

(mA)

= 10 V

= 25°C

400

350

300

250

200

150

100

0 2.01.61.20.80.4

= 10 V

= 25°C

Base-emitter voltage V

(V)

Base current I

(µA)

0 2.01.61.20.80.4

= 10 V

= 75°C −25°C

25°C

Base-emitter voltage V

(V)

Collector current I

(mA)

0.1

240

200

160

120

1 10 100

= 75°C

25°C

−25°C

Forward current transfer ratio h

= 10 V

Collector current I

(mA)

0.01

0.1

100

1 10 100

Collector-emitter saturation voltage V

CE(sat)

(V)

Collector current I

(mA)

/ I

= 10

= 75°C

25°C

–25°C

− 0.1 −1 −10 −100

1 600

1 400

1 200

1 000

800

600

400

200

Transition frequency f

(MHz)

Emitter current I

(mA)

= 10 V

= 25°C

2.4

2.0

1.6

1.2

0.8

0.4

0.1 1 10 100

Collector-emitter voltage V

(V)

= 1 mA

f = 10.7 MHz

= 25°C

Reverse transfer capacitance

(pF)

(Common emitter)

This product complies with the RoHS Directive (EU 2002/95/EC).

2SC2480

SJC00116CED

 I

NF  I

 g

− 0.1 −1 −10

Reverse transfer impedance Z

(Ω)

120

100

= 10 V

f = 2 MHz

= 25°C

Emitter current I

(mA)

− 0.1 −1 −10 −100

Power gain G

(dB)

= 10 V

f = 100 MHz

= 50 Ω

= 25°C

Emitter current I

(mA)

Noise figure NF (dB)

− 0.1 −1 −10 −100

= 10 V

f = 100 MHz

= 50 kΩ

= 25°C

Emitter current I

(mA)

−60

05040302010

−10

−20

−30

−40

−50

Input conductance g

(mS)

Input susceptance b

(mS)

= g

+ jb

= 10 V

f = 900 MHz

= −2 mA

−5 mA

300

500

600

200

−2.4

−1.0 0− 0.2− 0.4− 0.6− 0.8

− 0.4

− 0.8

−1.2

−1.6

−2.0

f = 900 MHz

= −5 mA

−2 mA

300

500

600

200

Reverse transfer conductance g

(mS)

Reverse transfer susceptance b

(mS)

= g

+ jb

= 10 V

−60 40200−20−40

−2 mA

300

500

600

900

f = 200 MHz

= −5 mA

Forward transfer conductance g

(mS)

Forward transfer susceptance b

(mS)

= g

+ jb

= 10 V

0 2.01.61.20.80.4

−5 mA

300

500

600

900

f = 200 MHz

= −2 mA

Output conductance g

(mS)

Output susceptance b

(mS)

= g

+ jb

= 10 V

This product complies with the RoHS Directive (EU 2002/95/EC).

Request for your special attention and precautions in using the technical information and

semiconductors described in this book

(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

regulations of the exporting country, especially, those with regard to security export control, must be observed.

(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples

of the products, and no license is granted under any intellectual property right or other right owned by our company or any other

company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other

company which may arise as a result of the use of technical information described in this book.

(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office

equipment, communications equipment, measuring instruments and household appliances).

Consult our sales staff in advance for information on the following applications:

– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support

systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-

ucts may directly jeopardize life or harm the human body.

– Any applications other than the standard applications intended.

(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-

provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product

Standards in advance to make sure that the latest specifications satisfy your requirements.

(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions

(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute

maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any

defect which may arise later in your equipment.

 Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire

or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,

thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which

damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.

(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita

Electric Industrial Co., Ltd.

Panasonic Network Card 2SC2480 User manual

Brand: Panasonic

Model: Network Card 2SC2480

Type: User manual

This manual is also suitable for

2SC2480

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Panasonic Network Card 2SC2480 User manual

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Panasonic Network Card 2SC2480 User manual

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