NXP BFU725F User guide

Brand: NXP

Model: BFU725F

Category: Power generators

Type: User guide

NXP BFU725F is high speed, low-noise silicon germanium amplifier transistor suitable for LNA applications up to 15 GHz. The transistor is packaged in a SOT343F with 2 emitter pins to reduce emitter inductance (for maximum gain). It is ideal for applications where cost is a concern and gives the designer flexibility in design work, for bias current, frequency of operation, noise-figure, gain and P1dB. BFU725F is used for GPS, satellite radio, cordless phone, wireless LAN and satellite LNB.

UM10483

BFU725F/N1 2.4 GHz to 6.0 GHz LNA demonstration board

Rev. 1 — 16 September 2011 User manual

Document information

Info Content

Keywords LNA, 2.4 GHz to 6.0 GHz, BFU725F/N1, WiFi, 802.11, WiMax, 802.16

Abstract This document describes how to use the BFU725F/N1 2.4 GHz to 6.0 GHz

LNA demonstration board.

User manual Rev. 1 — 16 September 2011 2 of 16

Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: [email protected]

NXP Semiconductors

UM10483

BFU725F/N1 2.4 GHz to 6.0 GHz LNA demonstration board

Revision history

Rev Date Description

v 1.0 20110916 first issue

User manual Rev. 1 — 16 September 2011 3 of 16

NXP Semiconductors

UM10483

BFU725F/N1 2.4 GHz to 6.0 GHz LNA demonstration board

1. Introduction

The BFU725F/N1 is a wideband silicon germanium amplifier transistor for high speed,

low-noise applications. The transistor is designed to be used for LNA applications up to

15 GHz such as GPS, satellite radio, cordless phone, wireless LAN and satellite LNB. The

BFU725F/N1 is packaged in a SOT343F that has 2 emitter pins to reduce emitter

inductance (for maximum gain).

The BFU725F/N1 is ideal for applications where cost is a concern. It also gives the

designer flexibility in his design work, for bias current, frequency of operation,

noise-figure, gain and P1dB.

The 2.4 GHz to 6.0 GHz LNA demonstration (demo) board is designed to evaluate the

performance of the BFU725F/N1 applied as a LNA in the 2.4 GHz to 6 GHz range. In this

document, the application diagram, board layout, bill of materials, and some typical results

are given.

Figure 1

shows the demonstration board.

2. General description

The BFU725F/N1 is the first discrete HBT produced using NXP Semiconductor’s SiGeC

QuBIC4x BiCMOS process. SiGe:C is a silicon germanium process with the addition of

carbon in the base layer of the NPN-transistor. The presence of carbon in the base layer

suppresses the diffusion of boron during wafer processing allowing steeper and narrower

Fig 1. BFU725F/N1 2.4 GHz to 6.0 GHz LNA demonstration board

aaa-000220

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BFU725F/N1 2.4 GHz to 6.0 GHz LNA demonstration board

SiGe HBT base and a heavier doped base. This results in lower base resistance, hence

lower noise and higher cut-off frequency (higher gain). Table 1

shows a summary of the

transistor performance in terms of noise and gain.

3. Application board

The BFU725F/N1 2.4 GHz to 6 GHz demonstration board simplifies the evaluation of the

BFU725F/N1 wideband transistor, for this frequency range. The demonstration board

enables testing of the device performance and requires no additional support circuitry.

The board is fully assembled with the BFU725F/N1, including input- and output-matching,

to optimize the performance. For input matching, a compromise must be made between

optimum noise/maximum gain/RL/usable bandwidth of the application and customer

requirements. The board is mounted with signal input and output SMA connectors for

connection to RF test equipment.

3.1 Schematic

Figure 2 shows the demonstration board schematic.

Figure 3

shows the required end-users application board schematic optimized for BOM

count compared to the demonstration board schematic which is optimized for tuning

flexibility.

Table 1. BFU725F/N1

=2V, I

=5mA, T

amb

=25



Frequency (GHz) Noise figure (dB) Associated gain (dB)

1.5 0.42 24

2.4 0.47 20

5.8 0.7 13.5

12 1.1 10

Table 2. Pinning information BFU725/N1

Pin Description Simplified outline Symbol

1emitter

2base

3emitter

4 collector

mbb159

1, 3

Table 3. Design targets

Symbol Parameter Value Unit

NF noise figure <1.3 dB

power gain >14 dB

s



input return loss >10 dB

s



output return loss >10 dB

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UM10483

BFU725F/N1 2.4 GHz to 6.0 GHz LNA demonstration board

(1) Output series resistance (R

) is set for V

= 1.2 V; reference voltage = 0.7 V.

Fig 2. Demo board schematic

aaa-000221

237 Ω

R11

10 Ω

49.9 kΩ

RF_IN

C15

RF_OUT

18 pF

C17

10 nF

C18

3.9 pF

C16

6.8 nH

82 nH

619 Ω

R12

0 Ω

BFU725FN1

R10

619 Ω

3.9 pF

(1) R

is set for V

= 1.2 V; reference voltage = 0.7 V.

Fig 3. Circuit diagram of the end-user application circuit (minimized BOM) demo board schematic

aaa-000222

237 Ω

R10

1240 Ω

R11

10 Ω

49.9 kΩ

RF_IN

C15

RF_OUT

18 pF

C17

10 nF

C18

3.9 pF

C16

6.8 nH

82 nH

BFU725FN1

3.9 pF

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BFU725F/N1 2.4 GHz to 6.0 GHz LNA demonstration board

3.2 PCB layout

Figure 4 shows the board layout.

The PCB layout is an essential part of an RF circuit design. The demonstration of the

BFU725F/N1 can serve as a guideline for laying out a board using the BFU725F/N1. Use

controlled impedance lines for all high frequency inputs and outputs. Bypass V

with

decoupling capacitors, preferably located as close as possible to the device. For long bias

lines it may be necessary to add decoupling capacitors to the line away from the device.

Correctly grounding the emitters is also essential for the performance. Connect the

emitters either directly to the ground plane or through vias, or do both.

Fig 4. Printed-circuit board of the BFU725F/N1 2.4 GHz to 6 GHz demo board

aaa-000223

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BFU725F/N1 2.4 GHz to 6.0 GHz LNA demonstration board

The demonstration board is constructed from Rogers 4003C using the stack shown in

Figure 5

3.3 Bill of materials

Fig 5. PCB material stack

aaa-000250

35.56 μm

304.8 μm Ro4003C

655.2 μm FR4 only for

mechanical rigidity of PCB

35.56 μm

Table 4. Demonstration board BOM

Reference Value Package Manufacturer / part number Comment

C15 18 pF 0402 Murata GRM1555C1H180JZ01 decoupling

C16 3.9 pF 0402 Murata GRM1555C1H3R9CZ01 DC blocking, input matching

C17 10 nF 0402 Murata GRM155R71C104KA88 decoupling

C18 3.9 pF 0402 Murata GRM1555C1H3R9CZ01 DC blocking, output matching

L1 6.8 nH 0402 Murata LQG15HN6N8J02 input matching

L2 82 nH 0402 CoilCraft 06CS82N output matching, DC bias

R3 49.9 k 0402 various bias setting temperature stability

R4 237  0402 various bias setting temperature stability

R9 0  0402 various emitter degenerating resistor, used to set gain

R11 10  0402 various stability

R12 0  0402 various not required

U1 BFU725F/N1 SOT343 NXP Semiconductors transistor

X1, X2 SMA RF

connector

Johnson, end-launch SMA

142-0701-841

RF input, RF output

X3 DC header Molex, PCB-header, 1 row, 3 way bias connector

User manual Rev. 1 — 16 September 2011 8 of 16

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BFU725F/N1 2.4 GHz to 6.0 GHz LNA demonstration board

4. Required equipment

The following equipment is required to perform measurements on the demonstration

board:

• DC power supply up to 30 mA at 3.3 V

• An RF signal generator capable of generating an RF signal over the operating

frequency range of 2.4 GHz to 6.0 GHz (preferably up to 12 GHz)

• An RF spectrum analyzer that covers at least the operating frequency range of

2.4 GHz to 6.0 GHz plus a few harmonics, (up to 18 GHz should be sufficient).

Optionally, a version with the capability of measuring noise figure would be convenient

• Current meter to measure the supply current (optional)

• A network analyzer for measuring gain, return loss, reverse isolation, stability and

P1dB

• Noise figure analyzer

4.1 Connections and setup

The BFU725F/N1 2.4 GHz to 6.0 GHz demonstration board is fully assembled and tested.

Please follow the steps below for a step-by-step guide to operate the demonstration board

and testing the device functions.

1. Connect the DC power supply, set to 3.3 V, to the V

and GND terminals.

2. Connect the RF signal generator and the spectrum analyzer; to the RF input and the

RF output of the demonstration board respectively. Do not turn on the RF output of the

signal generator yet, set it to 30 dBm output power at 2.4 GHz, and set the spectrum

analyzer on 2.4 GHz center frequency and a reference level of 10 dBm.

3. Turn on the DC power supply and it should read approximately 11 mA.

4. Enable the RF output of the generator; the spectrum analyzer displays a tone of

2.4 GHz at around –10 dBm.

5. Instead of using a signal generator and spectrum analyzer one can also use a

network analyzer in order to measure gain, return loss, stability and P1dB.

6. For noise figure evaluation, either a noise-figure analyzer or a spectrum analyzer with

noise option can be used. The use of a 5 dB noise source, such as the Agilent 346B is

recommended. When measuring the noise figure of the demonstration board, avoid

connecting adaptors and cables between the noise source and the demonstration

board, or de-embedded.

User manual Rev. 1 — 16 September 2011 9 of 16

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BFU725F/N1 2.4 GHz to 6.0 GHz LNA demonstration board

5. Typical results

5.1 2.4 GHz data (de-embedded)

5.2 5.9 GHz data (de-embedded)

Table 5. BFU725F/N1 demonstration board at 2.4 GHz

Symbol Parameter Value Unit

NF noise figure 0.8 dB

power gain >19 dB

s



Input return loss <11 dB

s



output return loss <12 dB

s



isolation >21 dB

L(1dB)

output power at 1 dB

gain compression

>0.8 dBm

i(1dB)

input power at 1 dB

gain compression

>17.3 dBm

collector current >10.5 mA

Table 6. BFU725F/N1 demonstration board at 5.9 GHz

Symbol Parameter Value Unit

NF noise figure 1.37 dB

power gain >11.6 dB

s



Input return loss <9.0 dB

s



output return loss <12.0 dB

s



isolation >21.0 dB

L(1dB)

output power at 1 dB

gain compression

>0.7 dBm

i(1dB)

input power at 1 dB

gain compression

>10.2 dBm

collector current >10.5 mA

User manual Rev. 1 — 16 September 2011 10 of 16

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BFU725F/N1 2.4 GHz to 6.0 GHz LNA demonstration board

Fig 6. S parameters

aaa-000224

-40

-30

-20

-10

Pwr -30 dBm Ch1 Start 200 MHz Stop 10 GHz

Trc1

Trc2

Trc3

Trc4

S11

S21

S12

S22

dB Mag

10 dB /

Ref 0 dB

Cal PCao

•

S11

M 1

M 2

M 1

M 2

M 1

M 2

M 1

M 2

11/23/2010, 1:54 PM

M 1

M 2

M 1

M 2

M 1

M 2

M 1

M 2

2.400000

5.900000

2.400000

5.900000

2.400000

5.900000

2.400000

5.900000

GHz

-11.980

-10.164

18.912

11.694

-26.414

-20.753

-13.080

-12.271

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BFU725F/N1 2.4 GHz to 6.0 GHz LNA demonstration board

Fig 7. 1 dB compression point (input and output)

aaa-000225

Freq

2.4 GHz

4.1 GHz

5.9 GHz

Ch2

Ch3

Ch4

Start

-40 dBm

—

Stop

0 dBm

Trc2

Trc3

Trc4

dB Mag

1 dB /

Ref 15 dB

Ch2

Ch3

Ch4

Ca? PCal Off

Trac Stat:

Cmp In:

Cmp Out:

Trac Stat:

Cmp In:

Cmp Out:

•Trac Stat:

Cmp In:

Cmp Out:

Trc2 S21

-17.3

0.8

Trc3 S21

-12.2

1.3

Trc4 S21

-10.2

0.7

dBm

•

M 1

M 2

M 3

-35.98

dBm

19.144

14.513

11.699

M 1

Cmp

M 2

Cmp

M 3

Cmp

4/19/2011, 2:58 AM

S21

User manual Rev. 1 — 16 September 2011 12 of 16

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BFU725F/N1 2.4 GHz to 6.0 GHz LNA demonstration board

Fig 8. Demonstration board noise figure 2.4 GHz (not de-embedded to de-embedded

subtract 0.1 dB)

Measurement Complete

Direct NOISE & GAIN CALIBRATED

RBW: 1 MHz RF Atten. 0 dB 2nd Stage Corr. On

Average: 10 Auto Ref Level On Image Rejection ...

Current Value

RF: 6 GHz ENR 15 dB NF. 1.77 dB

LO: ... Loss In 6 dB Noise Temp. 145.88 K

IF: ... Loss Out 0.3 dB Gain 11.75 dB

Noise Figure Marker[Noise] 0.991 dB Gain

Ref -62.7 dBm SWT 100 ms 2.4 GHz

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

2.000 GHz 6.000 GHz400.000 MHz/div

SGL

(RF)

Date: 19.APR.2011 17:11:34

aaa-000226

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UM10483

BFU725F/N1 2.4 GHz to 6.0 GHz LNA demonstration board

Fig 9. Demonstration board noise figure 5.9 GHz (not de-embedded to de-embedded

subtract 0.3 dB)

aaa-000227

Measurement Complete

Direct NOISE & GAIN CALIBRATED

RBW: 1 MHz RF Atten. 0 dB 2nd Stage Corr. On

Average: 10 Auto Ref Level On Image Rejection ...

Current Value

RF: 6 GHz ENR 15 dB NF. 1.77 dB

LO: ... Loss In 6 dB Noise Temp. 145.88 K

IF: ... Loss Out 0.3 dB Gain 11.75 dB

Noise Figure Marker[Noise] 1.672 dB Gain

Ref -62.7 dBm SWT 100 ms 5.9 GHz

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

2.000 GHz 6.000 GHz400.000 MHz/div

SGL

(RF)

Date: 19.APR.2011 17:11:56

User manual Rev. 1 — 16 September 2011 14 of 16

NXP Semiconductors

UM10483

BFU725F/N1 2.4 GHz to 6.0 GHz LNA demonstration board

6. Abbreviations

Fig 10. Stability factor

aaa-000228

Pwr -30 dBm Ch1 Start 100 MHz Stop 10 GHz

Trc4 K Lin Mag1 U / Ref 0 U Cal int

•

M 1

M 3

2.400000

5.900000

GHz

1.2160

1.3498

M 1

M 3

4/19/2011, 3:55 AM

Table 7. Abbreviations

Acronym Description

BOM Bill Of Materials

DCR Direct Current Resistance

GPS Global Positioning System

HBT Heterojunction Bipolar Transistor

LFM Linear Feet per Minute

LNA Low-Noise Amplifier

RL Return Loss

SMA SubMiniature version A

User manual Rev. 1 — 16 September 2011 15 of 16

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BFU725F/N1 2.4 GHz to 6.0 GHz LNA demonstration board

7. Legal information

7.1 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

7.2 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequential damages (including - without limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and operation of their applications

and products using NXP Semiconductors products, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suitable and fit for the customer’s applications and

products planned, as well as for the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessary

testing for the customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from national authorities.

Evaluation products — This product is provided on an “as is” and “with all

faults” basis for evaluation purposes only. NXP Semiconductors, its affiliates

and their suppliers expressly disclaim all warranties, whether express, implied

or statutory, including but not limited to the implied warranties of

non-infringement, merchantability and fitness for a particular purpose. The

entire risk as to the quality, or arising out of the use or performance, of this

product remains with customer.

In no event shall NXP Semiconductors, its affiliates or their suppliers be liable

to customer for any special, indirect, consequential, punitive or incidental

damages (including without limitation damages for loss of business, business

interruption, loss of use, loss of data or information, and the like) arising out

the use of or inability to use the product, whether or not based on tort

(including negligence), strict liability, breach of contract, breach of warranty or

any other theory, even if advised of the possibility of such damages.

Notwithstanding any damages that customer might incur for any reason

whatsoever (including without limitation, all damages referenced above and

all direct or general damages), the entire liability of NXP Semiconductors, its

affiliates and their suppliers and customer’s exclusive remedy for all of the

foregoing shall be limited to actual damages incurred by customer based on

reasonable reliance up to the greater of the amount actually paid by customer

for the product or five dollars (US$5.00). The foregoing limitations, exclusions

and disclaimers shall apply to the maximum extent permitted by applicable

law, even if any remedy fails of its essential purpose.

7.3 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

NXP Semiconductors

UM10483

BFU725F/N1 2.4 GHz to 6.0 GHz LNA demonstration board

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddre[email protected]

Date of release: 16 September 2011

Document identifier: UM10483

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

8. Contents

1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 General description. . . . . . . . . . . . . . . . . . . . . . 3

3 Application board . . . . . . . . . . . . . . . . . . . . . . . 4

3.1 Schematic. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

3.2 PCB layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3.3 Bill of materials. . . . . . . . . . . . . . . . . . . . . . . . . 7

4 Required equipment . . . . . . . . . . . . . . . . . . . . . 8

4.1 Connections and setup. . . . . . . . . . . . . . . . . . . 8

5 Typical results . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5.1 2.4 GHz data (de-embedded). . . . . . . . . . . . . . 9

5.2 5.9 GHz data (de-embedded). . . . . . . . . . . . . . 9

6 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 14

7 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15

7.1 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

7.2 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 15

7.3 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15

8 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

NXP BFU725F User guide

Brand: NXP

Model: BFU725F

Category: Power generators

Type: User guide

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