Transistors
1
Publication date: November 2002 SJC00026BED
2SA1738
Silicon PNP epitaxial planar type
For high speed switching
■ Features
• High speed switching (Pair with 2SC3757)
• Low collector-emitter saturation voltage V
CE(sat)
• Mini type package, allowing downsizing of the equipment and au-
tomatic insertion through the tape packing and the magazine
packing.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−15 V
Collector-emitter voltage (Base open) V
CEO
−15 V
Emitter-base voltage (Collector open) V
EBO
−4V
Collector current I
C
−50 mA
Peak collector current I
CP
−100 mA
Collector power dissipation P
C
200 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= −8 V, I
E
= 0 − 0.1 µA
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= −3 V, I
C
= 0 − 0.1 µA
Forward current transfer ratio h
FE1
*
V
CE
= −1 V, I
C
= −10 mA 50 150
h
FE2
V
CE
= −1 V, I
C
= −1 mA 30
Collector-emitter saturation voltage V
CE(sat)
I
C
= −10 mA, I
B
= −1 mA − 0.1 − 0.2 V
Transition frequency f
T
V
CB
= −10 V, I
E
= 10 mA, f = 200 MHz 800 1
500 MHz
Collector output capacitance C
ob
V
CB
= −5 V, I
E
= 0, f = 1 MHz 1 pF
(Common base, input open circuited)
Turn-on time t
on
Refer to the switching time measurement circuit
12 ns
Turn-off time t
off
20 ns
Storage time t
stg
19 ns
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
0.40
+0.10
–0.05
(0.65)
1.50
+0.25
–0.05
2.8
+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±0.2
5˚
10˚
0 to 0.1
1.1
+0.2
–0.1
1.1
+0.3
–0.1
Rank Q R
h
FE1
50 to 120 90 to 150
1 : Base
2 : Emitter
3 : Collector
EIAJ : SC-59
Mini3-G1 Package
Marking Symbol: AK
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA1738
2
SJC00026BED
I
C
V
CE
V
CE(sat)
I
C
V
BE(sat)
I
C
P
C
T
a
h
FE
I
C
f
T
I
E
C
ob
V
CB
Switching time measurement circuit
t
on
, t
off
Test circuit t
stg
Test circuit
508 Ω 30 Ω
51 Ω
V
BB
= −10 V
V
IN
V
CC
= −3 V
V
IN
= 9.0 VV
IN
= −5.8 V
V
BB
= Ground
V
IN
= 9.8 V
V
BB
= −8.0 V
V
OUT
0.1 µF
34 Ω
V
IN
0
0
V
OUT
V
IN
V
OUT
90%
90%
90%
10%
10%
t
stg
t
on
t
off
90%
2 kΩ 62 Ω
51 Ω
V
BB
V
IN
V
CC
= −1.5 V
V
OUT
0.1 µF
52 Ω
0 16040 12080
0
240
200
160
120
80
40
Collector power dissipation P
C
(
mW
)
Ambient temperature T
a
(
°C
)
0 −12−10−8−2 −6−4
0
−60
−50
−40
−30
−20
−10
T
a
= 25°C
−300 µA
−500 µA
−400 µA
−100 µA
−200 µA
I
B
= −600 µA
Collector current I
C
(
mA
)
Collector-emitter voltage V
CE
(
V
)
−1 −10 −100 −1 000
− 0.01
− 0.1
−1
−10
−100
I
C
/ I
B
= 10
25°C
−25°C
T
a
= 75°C
Collector-emitter saturation voltage V
CE(sat)
(
V
)
Collector current I
C
(
mA
)
−1 −10 −100 −1
000
− 0.01
− 0.1
−1
−10
−100
I
C
/ I
B
= 10
25°C
75°C
T
a
= −25°C
Base-emitter saturation voltage V
BE(sat)
(
V
)
Collector current I
C
(
mA
)
− 0.1 −1 −10 −100
0
240
200
160
120
80
40
V
CE
= −10 V
T
a
= 75°C
25°C
−25°C
Forward current transfer ratio h
FE
Collector current I
C
(
mA
)
1 10 100
0
2 400
2 000
1 600
1 200
800
400
V
CB
= −10 V
f = 200 MHz
T
a
= 25°C
Transition frequency f
T
(
MHz
)
Emitter current I
E
(
mA
)
−1 −10 −100
0
2.4
2.0
1.6
1.2
0.8
0.4
I
E
= 0
f = 1 MHz
T
a
= 25°C
Collector-base voltage V
CB
(
V
)
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
This product complies with the RoHS Directive (EU 2002/95/EC).
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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