Vishay IRF830AS Owner's manual

Brand: Vishay

Model: IRF830AS

Type: Owner's manual

Vishay IRF830AS is a N-Channel MOSFET that offers low gate charge, leading to simple drive requirements. It features improved gate, avalanche, and dynamic dV/dt ruggedness and can handle high power applications with ease. The device is fully characterized for capacitance, avalanche voltage, and current, making it suitable for various high-performance applications.

IRF830AS, IRF830AL, SiHF830AS, SiHF830AL

www.vishay.com Vishay Siliconix

S21-0901-Rev. D, 30-Aug-2021 1Document Number: 91062

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Power MOSFET

FEATURES

• Low gate charge Qg results in simple drive

requirement

• Improved gate, avalanche and dynamic dV/dt

ruggedness

• Fully characterized capacitance and avalanche

voltage and current

• Effective Coss specified

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note

This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details

APPLICATIONS

• Switch mode power supply (SMPS)

• Uninterruptible power supply

• High speed power switching

TYPICAL SMPS TOPOLOGIES

• Two transistor forward

• Half bridge and full bridge

Note

a. See device orientation

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. Starting TJ = 25 °C, L = 18 mH, Rg = 25 Ω, IAS = 5.0 A (see fig. 12)

c. ISD ≤ 5.0 A, dI/dt ≤ 370 A/μs, VDD ≤ VDS, TJ ≤ 150 °C

d. 1.6 mm from case

e. Uses SiHF830A data and test conditions

PRODUCT SUMMARY

VDS (V) 500

RDS(on) max. (Ω)V

GS = 10 V 1.40

Qg max. (nC) 24

Qgs (nC) 6.3

Qgd (nC) 11

Configuration Single

N-Channel MOSFET

PAK (TO-2

PAK (TO-262)

GDS

Available

ORDERING INFORMATION

Package D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262)

Lead (Pb)-free and Halogen-free SiHF830AS-GE3 SiHF830ASTRL-GE3 a SiHF830AL-GE3 a

Lead (Pb)-free IRF830ASPbF IRF830ASTRLPbF a IRF830ALPbF

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage VDS 500 V

Gate-Source Voltage VGS ± 30

Continuous Drain Current VGS at 10 V TC = 25 °C ID

5.0

ATC = 100 °C 3.2

Pulsed Drain Current a, e IDM 20

Linear Derating Factor 0.59 W/°C

Single Pulse Avalanche Energy b, e EAS 230 mJ

Avalanche Currenta IAR 5.0 A

Repetiitive Avalanche Energy a EAR 7.4 mJ

Maximum Power Dissipation TA = 25 °C PD

3.1 W

TC = 25 °C 74

Peak Diode Recovery dV/dtc, edV/dt 5.3 V/ns

Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C

Soldering Recommendations (Peak temperature) dfor 10 s 300

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S21-0901-Rev. D, 30-Aug-2021 2Document Number: 91062

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Note

a. When mounted on 1" square PCB (FR-4 or G-10 material)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %

c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS

d. Uses SiHF830A data and test conditions

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient

(PCB mounted, steady-state) aRthJA -40

°C/W

Maximum Junction-to-Case (Drain) RthJC -1.7

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage VDS VGS = 0, ID = 250 μA 500 - - V

VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA d -0.60-V/°C

Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.5 V

Gate-Source Leakage IGSS V

GS = ± 30 V - - ± 100 nA

Zero Gate Voltage Drain Current IDSS

VDS = 500 V, VGS = 0 V - - 25 μA

VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250

Drain-Source On-State Resistance RDS(on) V

GS = 10 V ID = 3.0 A b --1.4Ω

Forward Transconductance gfs VDS = 50 V, ID = 3.0 A d2.8 - - S

Dynamic

Input Capacitance Ciss VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5 d

- 620 -

pFOutput Capacitance Coss -93-

Reverse Transfer Capacitance Crss -4.3-

Output Capacitance Coss VGS = 0 V

VDS = 1.0 V, f = 1.0 MHz - 886 -

VDS = 400 V, f = 1.0 MHz - 27 -

Effective Output Capacitance Coss eff. VDS = 0 V to 400 V c, d -39-

Total Gate Charge Qg

VGS = 10 V ID = 5.0 A, VDS = 400 V,

see fig. 6 and 13 b, d

--24

nC Gate-Source Charge Qgs --6.3

Gate-Drain Charge Qgd --11

Turn-On Delay Time td(on)

VDD = 250 V, ID = 5.0 A,

Rg = 14 Ω, RD = 49 Ω, see fig. 10 b, d

-10-

Rise Time tr -21-

Turn-Off Delay Time td(off) -21-

Fall Time tf -15-

Gate Input Resistance Rgf = 1 MHz, open drain 1.7 - 10.7 Ω

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current ISMOSFET symbol

showing the

integral reverse

p - n junction diode

--5.0

Pulsed Diode Forward Current a ISM --20

Body Diode Voltage VSD TJ = 25 °C, IS = 5.0 A, VGS = 0 V b --1.5V

Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 5.0 A, dI/dt = 100 A/μs b, d - 430 650 ns

Body Diode Reverse Recovery Charge Qrr -2.03.0μC

Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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IRF830AS, IRF830AL, SiHF830AS, SiHF830AL

www.vishay.com Vishay Siliconix

S21-0901-Rev. D, 30-Aug-2021 3Document Number: 91062

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

91062_01

Bottom

To p

VGS

15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width

TJ = 25 °C

4.5 V

VDS, Drain-to-Source Voltage (V)

ID, Drain-to-Source Current (A)

102

10-2

0.1

0.1 1 102

DS,

Drain-to-Source Voltage (V)

, Drain-to-Source Current (A)

Bottom

To p

VGS

15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width

TJ = 150 °C

91062_02

4.5 V

102

0.1

10110

20 µs Pulse Width

VDS = 50 V

ID, Drain-to-Source Current (A)

VGS, Gate-to-Source Voltage (V)

5.0 6.0 7.0 8.04.0

91062_03

TJ = 25 °C

TJ = 150 °C

102

0.1

= 5.0 A

= 10 V

0.0

0.5

1.0

1.5

2.0

2.5

Junction Temperature (°C)

DS(on)

, Drain-to-Source On Resistance

(Normalized)

91062_04

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

10 102

C, Capacitance (pF)

VDS, Drain-to-Source Voltage (V)

Ciss

Crss

Coss

VGS = 0 V, f = 1 MHz

Ciss = Cgs + Cgd, Cds Shorted

Crss = Cgd

Coss = Cds + Cgd

91062_05

103

104

103

102

QG, Total Gate Charge (nC)

VGS, Gate-to-Source Voltage (V)

824

2016

= 100 V

= 250 V

For test circuit

see figure 13

= 400 V

91062_06

= 5.0 A

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IRF830AS, IRF830AL, SiHF830AS, SiHF830AL

www.vishay.com Vishay Siliconix

S21-0901-Rev. D, 30-Aug-2021 4Document Number: 91062

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 10a - Switching Time Test Circuit

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

102

, Source-to-Drain Voltage (V)

, Reverse Drain Current (A)

0.2 1.0

0.80.60.4

= 0 V

91062_07

TJ = 25 °C

TJ = 150 °C

0.1

1.2

10 µs

100 µs

1 ms

10 ms

Operation in this area limited

by RDS(on)

VDS, Drain-to-Source Voltage (V)

ID, Drain Current (A)

TC = 25 °C

TJ = 150 °C

Single Pulse

102

0.1

10 102103104

91062_08

, Drain Current (A)

, Case Temperature (°C)

0.0

1.0

2.0

3.0

4.0

5.0

25 1501251007550

91062_09

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

VGS

D.U.T.

10 V

VDS

VDD

VDS

90 %

10 %

VGS

td(on) trtd(off) tf

0.1

10-2

10-5 10-4 10-3 10-2 0.1 1

PDM

t1, Rectangular Pulse Duration (s)

Thermal Response (ZthJC)

Notes:

1. Duty Factor, D = t1/t2

2. Peak Tj = PDM x ZthJC + TC

Single Pulse

(Thermal Response)

D = 0.50

0.20

0.05

0.02

0.01

91062_11

0.10

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IRF830AS, IRF830AL, SiHF830AS, SiHF830AL

www.vishay.com Vishay Siliconix

S21-0901-Rev. D, 30-Aug-2021 5Document Number: 91062

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 12a - Unclamped Inductive Test Circuit

Fig. 12b - Unclamped Inductive Waveforms

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Fig. 13a - Maximum Avalanche Energy vs. Drain Current

Fig. 12d - Basic Gate Charge Waveform

Fig. 13b - Gate Charge Test Circuit

IAS

0.01 Ω

D.U.T.

VDS

-VDD

Driver

15 V

20 V

IAS

VDS

500

100

200

300

400

25 150

125

10075

Starting TJ, Junction Temperature (°C)

EAS, Single Pulse Avalanche Energy (mJ)

Bottom

To p

2.2 A

3.2 A

5.0 A

91062_12c

QGS QGD

Charge

VGS

785

770

775

780

0.0 5.04.03.02.01.0

, Avalanche Current (A)

DSav

, Avalanche Voltage (V)

790

91062_12d

D.U.T.

3 mA

VGS

VDS

IGID

0.3 µF

0.2 µF

50 kΩ

12 V

Current regulator

Current sampling resistors

Same type as D.U.T.

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IRF830AS, IRF830AL, SiHF830AS, SiHF830AL

www.vishay.com Vishay Siliconix

S21-0901-Rev. D, 30-Aug-2021 6Document Number: 91062

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?91062.

P.W. Period

dI/dt

Diode recovery

dV/dt

Ripple ≤ 5 %

Body diode forward drop

Re-applied

voltage

Reverse

recovery

current

Body diode forward

current

VGS = 10 Va

ISD

Driver gate drive

D.U.T. lSD waveform

D.U.T. VDS waveform

Inductor current

D = P.W.

Period

Peak Diode Recovery dV/dt Test Circuit

VDD

• dV/dt controlled by Rg

• Driver same type as D.U.T.

• ISD controlled by duty factor “D”

• D.U.T. - device under test

D.U.T. Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

Note

a. VGS = 5 V for logic level devices

VDD

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Document Number: 91364 www.vishay.com

Revision: 15-Sep-08 1

Package Information

Vishay Siliconix

TO-263AB (HIGH VOLTAGE)

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.

2. Dimensions are shown in millimeters (inches).

3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the

outmost extremes of the plastic body at datum A.

4. Thermal PAD contour optional within dimension E, L1, D1 and E1.

5. Dimension b1 and c1 apply to base metal only.

6. Datum A and B to be determined at datum plane H.

7. Outline conforms to JEDEC outline to TO-263AB.

Detail A

2 x e

2 x b2

2 x b

0.010 A B

MM ± 0.004 B

Base

metal

Plating b1, b3

(b, b2)

(c)

Section B - B and C - C

Scale: none

Lead tip

(Datum A)

2CC

View A - A

Seating plane

Gauge

plane

0° to 8°

Detail “A”

Rotated 90° CW

scale 8:1

L3 A1

MILLIMETERS INCHES MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.

A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 -

A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420

b 0.51 0.99 0.020 0.039 E1 6.22 - 0.245 -

b1 0.51 0.89 0.020 0.035 e 2.54 BSC 0.100 BSC

b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625

b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110

c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066

c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070

c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC

D 8.38 9.65 0.330 0.380 L4 4.78 5.28 0.188 0.208

ECN: S-82110-Rev. A, 15-Sep-08

DWG: 5970

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Document Number: 91367 www.vishay.com

Revision: 27-Oct-08 1

Package Information

Vishay Siliconix

I2PAK (TO-262) (HIGH VOLTAGE)

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.

2. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outmost

extremes of the plastic body.

3. Thermal pad contour optional within dimension E, L1, D1, and E1.

4. Dimension b1 and c1 apply to base metal only.

Base

metal

Plating b1, b3

(b, b2)

Section A - A

Section B - B and C - C

Scale: None

Seating

plane

Lead tip

(Datum A)

2 x e

3 x b2

3 x b

0.010 A B

MILLIMETERS INCHES MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.

A 4.06 4.83 0.160 0.190 D 8.38 9.65 0.330 0.380

A1 2.03 3.02 0.080 0.119 D1 6.86 - 0.270 -

b 0.51 0.99 0.020 0.039 E 9.65 10.67 0.380 0.420

b1 0.51 0.89 0.020 0.035 E1 6.22 - 0.245 -

b2 1.14 1.78 0.045 0.070 e 2.54 BSC 0.100 BSC

b3 1.14 1.73 0.045 0.068 L 13.46 14.10 0.530 0.555

c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.065

c1 0.38 0.58 0.015 0.023 L2 3.56 3.71 0.140 0.146

c2 1.14 1.65 0.045 0.065

ECN: S-82442-Rev. A, 27-Oct-08

DWG: 5977

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AN826

Vishay Siliconix

Document Number: 73397

11-Apr-05

www.vishay.com

RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead

0.635

(16.129)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.420

(10.668)

0.355

(9.017)

0.145

(3.683)

0.135

(3.429)

0.200

(5.080)

0.050

(1.257)

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Revision: 01-Jan-2023 1Document Number: 91000

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ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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Vishay IRF830AS Owner's manual

Vishay IRF830AS Owner's manual

Vishay IRF830AS Owner's manual

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