Philips BUK205-50Y User manual

Philips
Brand
Philips
Model
BUK205-50Y
Category
Network switches
Type
User manual

The Philips BUK205-50Y is a monolithic temperature and overload protected power switch based on MOSFET technology in a 5-pin plastic surface mount envelope. It excels as a general controller for driving lamps, motors, solenoids, and heaters, thanks to its low on-state resistance, 5V logic compatible input, and extensive protection features.

The Philips BUK205-50Y is a monolithic temperature and overload protected power switch based on MOSFET technology in a 5-pin plastic surface mount envelope. It excels as a general controller for driving lamps, motors, solenoids, and heaters, thanks to its low on-state resistance, 5V logic compatible input, and extensive protection features.

Philips Semiconductors Product specification
TOPFET high side switch BUK205-50Y
SMD version of BUK201-50Y
DESCRIPTION QUICK REFERENCE DATA
Monolithic temperature and SYMBOL PARAMETER MIN. UNIT
overload protected power switch
based on MOSFET technology in a I
L
Nominal load current (ISO) 6 A
5 pin plastic surface mount
envelope, configured as a single
high side switch. SYMBOL PARAMETER MAX. UNIT
APPLICATIONS V
BG
Continuous off-state supply voltage 50 V
I
L
Continuous load current 15 A
General controller for driving T
j
Continuous junction temperature 150 ˚C
lamps, motors, solenoids, heaters. R
ON
On-state resistance 60 mΩ
FEATURES FUNCTIONAL BLOCK DIAGRAM
Vertical power DMOS switch
Low on-state resistance
5 V logic compatible input
Overtemperature protection -
self resets with hysteresis
Overload protection against
short circuit load with
output current limiting;
latched - reset by input
High supply voltage load
protection
Supply undervoltage lock out
Status indication for overload
protection activated
Diagnostic status indication
of open circuit load
Very low quiescent current
Voltage clamping for turn off of
inductive loads
ESD protection on all pins
Reverse battery and
overvoltage protection Fig.1. Elements of the TOPFET HSS with internal ground resistor.
PINNING - SOT426 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 Ground
2 Input
3 (connected to mb)
4 Status
5 Load
Fig. 2. Fig. 3.
mb Battery
BATT
LOAD
INPUT
GROUND
STATUS
POWER
MOSFET
RG
CONTROL &
PROTECTION
CIRCUITS
mb
12 45
3
B
G
L
I
S
HSS
TOPFET
July 1996 1 Rev 1.000
Philips Semiconductors Product specification
TOPFET high side switch BUK205-50Y
SMD version of BUK201-50Y
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Battery voltages
V
BG
Continuous off-state supply voltage - 0 50 V
Reverse battery voltages
1
External resistors:
-V
BG
Repetitive peak supply voltage R
I
= R
S
≥ 4.7 kΩ, δ ≤ 0.1 - 32 V
-V
BG
Continuous reverse supply voltage R
I
= R
S
≥ 4.7 kΩ -16V
I
L
Continuous load current T
mb
≤
115 ˚C - 15 A
P
D
Total power dissipation T
mb
≤
25 ˚C - 83.3 W
T
stg
Storage temperature - -55 175 ˚C
T
j
Continuous junction temperature
2
- - 150 ˚C
T
sold
Lead temperature during soldering - 250 ˚C
Input and status
I
I
Continuous input current - -5 5 mA
I
S
Continuous status current - -5 5 mA
I
I
Repetitive peak input current δ ≤ 0.1 -20 20 mA
I
S
Repetitive peak status current δ ≤ 0.1 -20 20 mA
Inductive load clamping
E
BL
Non-repetitive clamping energy T
mb
= 150 ˚C prior to turn-off - 1.2 J
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
Electrostatic discharge capacitor Human body model; - 2 kV
voltage C = 250 pF; R = 1.5 kΩ
THERMAL CHARACTERISTIC
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Thermal resistance
3
R
th j-mb
Junction to mounting base - - 1.2 1.5 K/W
1 Reverse battery voltage is allowed only with external input and status resistors to limit the currents to a safe value.
2 For normal continuous operation. A higher T
j
is allowed as an overload condition but at the threshold T
j(TO)
the over temperature trip operates
to protect the switch.
3 Of the output Power MOS transistor.
July 1996 2 Rev 1.000
Philips Semiconductors Product specification
TOPFET high side switch BUK205-50Y
SMD version of BUK201-50Y
STATIC CHARACTERISTICS
T
mb
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Clamping voltages
V
BG
Battery to ground I
G
= 1 mA 50 55 65 V
V
BL
Battery to load I
L
= I
G
= 1 mA 50 55 65 V
-V
LG
Negative load to ground I
L
= 1 mA 12 17 21 V
Supply voltage battery to ground
V
BG
Operating range
1
-5-40V
Currents V
BG
= 13 V
I
L
Nominal load current
2
V
BL
= 0.5 V; T
mb
= 85 ˚C 6 - - A
I
B
Quiescent current
3
V
IG
= 0 V; V
LG
= 0 V - 0.1 2 µA
I
G
Operating current
4
V
IG
= 5 V; I
L
= 0 A 1.5 2.2 4 mA
I
L
Off-state load current
5
V
BL
= 13 V; V
IG
= 0 V - 0.1 1 µA
Resistances
R
ON
On-state resistance
6
V
BG
= 13 V; I
L
= 7.5 A; t
p
= 300 µs - 45 60 mΩ
R
ON
On-state resistance V
BG
= 5 V; I
L
= 1.5 A; t
p
= 300 µs - 70 90 mΩ
R
G
Internal ground resistance I
G
= 10 mA - 150 - Ω
INPUT CHARACTERISTICS
T
mb
= 25 ˚C; V
BG
= 13 V
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
I
Input current V
IG
= 5 V 35 60 100 µA
V
IG
Input clamping voltage I
I
= 200 µA 6 7.5 8.5 V
V
IG(ON)
Input turn-on threshold voltage - 2.1 2.7 V
V
IG(OFF)
Input turn-off threshold voltage 1.5 2 - V
1 On-state resistance is increased if the supply voltage is less than 9 V. Refer to figure 8.
2 Defined as in ISO 10483-1.
3 This is the continuous current drawn from the battery when the input is low and includes leakage current to the load.
4 This is the continuous current drawn from the battery with no load connected, but with the input high.
5 The measured current is in the load pin only.
6 The supply and input voltage for the R
ON
tests are continuous. The specified pulse duration t
p
refers only to the applied load current.
July 1996 3 Rev 1.000
Philips Semiconductors Product specification
TOPFET high side switch BUK205-50Y
SMD version of BUK201-50Y
PROTECTION FUNCTIONS AND STATUS INDICATIONS
Truth table for normal, open-circuit load and overload conditions and abnormal supply voltages.
FUNCTIONS TRUTH TABLE THRESHOLD
SYMBOL CONDITION INPUT STATUS OUTPUT MIN. TYP. MAX. UNIT
Normal on-state 1 1 1
Normal off-state 0 1 0
I
L(OC)
Open circuit load
1
1 0 1 100 350 600 mA
Open circuit load 0 1 0
T
j(TO)
Over temperature
2
1 0 0 150 175 - ˚C
Over temperature
3
00 0
V
BL(TO)
Short circuit load
4
1 0 0 9 10.5 12 V
Short circuit load 0 1 0
V
BG(TO)
Low supply voltage
5
X1 0345V
V
BG(LP)
High supply voltage
6
X1 0404550V
For input ‘0’ equals low, ‘1’ equals high, ‘X’ equals don’t care.
For status ‘0’ equals low, ‘1’ equals open or high.
For output switch ‘0’ equals off, ‘1’ equals on.
STATUS CHARACTERISTICS
T
mb
= 25 ˚C.
The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
SG
Status clamping voltage I
S
= 100 µA; V
IG
= 0 V 6 7 8 V
V
SG
Status low voltage I
S
= 50 µA; V
BG
= 13 V; V
IG
= 5 V - 0.7 0.8 V
I
S
Status leakage current V
SG
= 5 V - 0.1 1 µA
I
S
Status saturation current
7
V
SS
= 5 V; R
S
= 0 Ω; V
BG
= 13 V - 5 - mA
Application information
R
S
External pull-up resistor
8
V
SS
= 5 V - 100 - kΩ
1 In the on-state, the switch detects whether the load current is less than the quoted open load threshold current. This is for status indication
only. Typical hysteresis equals 140 mA. The thresholds are specified for supply voltage within the normal working range.
2 After cooling below the reset temperature the switch will resume normal operation. The reset temperature is lower than the trip temperature by
typically 10 ˚C.
3 If the overtemperature protection has operated, status remains low to indicate the overtemperature condition even if the input is taken low,
providing the device has not cooled below the reset temperature.
4 After short circuit protection has operated, the input voltage must be toggled low for the switch to resume normal operation.
5 Undervoltage sensor causes the device to switch off. Typical hysteresis equals 0.7 V.
6 Overvoltage sensor causes the device to switch off to protect the load. Typical hysteresis equals 1.3 V.
7 In a fault condition with the pull-up resistor short circuited while the status transistor is conducting.
8 The pull-up resistor also protects the status pin during reverse battery conditions.
July 1996 4 Rev 1.000
Philips Semiconductors Product specification
TOPFET high side switch BUK205-50Y
SMD version of BUK201-50Y
DYNAMIC CHARACTERISTICS
T
mb
= 25 ˚C; V
BG
= 13 V
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Inductive load turn-off
-V
LG
Negative load voltage
1
V
IG
= 0 V; I
L
= 7.5 A; t
p
= 300 µs152025V
Short circuit load protection
2
V
IG
= 5 V; R
L
≤ 10 mΩ
t
d sc
Response time - 90 - µs
I
L
Load current prior to turn-off t < t
d sc
-42- A
Overload protection
3
I
L(lim)
Load current limiting V
BL
= 9 V; t
p
= 300 µs284052A
SWITCHING CHARACTERISTICS
T
mb
= 25 ˚C, V
BG
= 13 V, for resistive load R
L
= 13 Ω.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
During turn-on to V
IG
= 5 V
t
d on
Delay time to 10% V
L
-16-µs
dV/dt
on
Rate of rise of load voltage - 1 2.5 V/µs
t
on
Total switching time to 90% V
L
-40-µs
During turn-off to V
IG
= 0 V
t
d off
Delay time to 90% V
L
-30-µs
dV/dt
off
Rate of fall of load voltage - 1.2 2.5 V/µs
t
off
Total switching time to 10% V
L
-50-µs
CAPACITANCES
T
mb
= 25 ˚C; f = 1 MHz; V
IG
= 0 V
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
C
ig
Input capacitance V
BG
= 13 V - 15 20 pF
C
bl
Output capacitance V
BL
= V
BG
= 13 V - 415 580 pF
C
sg
Status capacitance V
SG
= 5 V - 11 15 pF
1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. This negative voltage
is clamped by the device.
2 The load current is self-limited during the response time for short circuit load protection. Response time is measured from when input goes
high.
3 If the load resistance is low, but not a complete short circuit, such that the on-state voltage remains less than V
BL(TO)
, the device remains in
current limiting until the overtemperature protection operates.
July 1996 5 Rev 1.000
Philips Semiconductors Product specification
TOPFET high side switch BUK205-50Y
SMD version of BUK201-50Y
Fig.4. High side switch measurements schematic.
(current and voltage conventions)
Fig.5. Normalised limiting power dissipation.
P
D
% = 100
⋅
P
D
/P
D
(25 ˚C) = f(T
mb
)
Fig.6. Limiting continuous on-state load current.
I
L
= f(T
mb
); conditions: V
IG
= 5 V, V
BG
= 13 V
Fig.7. Typical on-state characteristics, T
j
= 25 ˚C.
I
L
= f(V
BL
); parameter V
BG
; t
p
= 250
µ
s
Fig.8. Typical on-state resistance, T
j
= 25 ˚C.
R
ON
= f(V
BG
); conditions: I
L
= 7.5 A; t
p
= 300
µ
s
Fig.9. Typical on-state resistance, t
p
= 300
µ
s.
R
ON
= f(T
j
); parameter V
BG
; condition I
L
= 1.5 A
L
I
S
TOPFET
HSS
B
G
IB
IG
II
IS
IL
VBG
VIG
VSG
RS
VLG
LOAD
VBL
0 0.5 1 1.5 2
0
10
20
30
40
BUK205-50Y
VBL / V
IL / A
6
7
13
5
VBG / V =
0 20 40 60 80 100 120 140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1 10 100
0
10
20
30
40
50
60
70
80
90
100
BUK205-50Y
VBG / V
RON / mOhm
0 50 100 150
0
5
10
15
20
BUK205-50Y
Tmb / C
IL / A
BUK205-50Y
Tmb / C
-60 -20 20 60 100 140 180
RON / mOhm
0
50
100
150
VBG =
5 V
13 V
typ.
July 1996 6 Rev 1.000
Philips Semiconductors Product specification
TOPFET high side switch BUK205-50Y
SMD version of BUK201-50Y
Fig.10. Typical supply characteristics, 25 ˚C.
I
G
= f(V
BG
); parameter V
IG
Fig.11. Typical operating supply current.
I
G
= f(T
j
); parameter V
BG
; condition V
IG
= 5 V
Fig.12. Typical supply quiescent current.
I
B
= f(T
j
); condition V
BG
= 13 V, V
IG
= 0 V, V
LG
= 0 V
Fig.13. Typical off-state leakage current.
I
L
= f(T
j
); conditions: V
BL
= 13 V = V
BG
; V
IG
= 0 V.
Fig.14. Typical input characteristics, T
j
= 25 ˚C.
I
I
= f(V
IG
); parameter V
BG
Fig.15. Typical input current, T
j
= 25 ˚C.
I
I
= f(V
BG
); condition V
IG
= 5 V
0 20 40 60
VBG / V
IG / mA
BUK205-50Y
5
4
3
2
1
0
OPERATING
QUIESCENT
CLAMPING
HIGH VOLTAGE
10 30 50
VIG = 3 V
VIG = 0 V
-60 -20 20 60 100 140 180
Tj / C
IL BUK205-50Y
100 uA
10 uA
1 uA
100 nA
10 nA
1 nA
-60 -20 20 60 100 140 180
Tj / C
IG / mA BUK205-50Y
3
2
1
0
VBG / V =
13
50
0 2 4 6 8
VIG / V
II / uA BUK205-50Y
200
150
100
50
0
VBG / V = 5
7
13
-60 -20 20 60 100 140 180
Tj / C
IB BUK205-50Y
100 uA
10 uA
1 uA
100 nA
10 nA
0 20 40
VBG / V
II / uA BUK205-50Y
100
80
60
40
20
0
10 30 50
July 1996 7 Rev 1.000
Philips Semiconductors Product specification
TOPFET high side switch BUK205-50Y
SMD version of BUK201-50Y
Fig.16. Typical input threshold voltages.
V
IG
= f(T
j
); conditions V
BG
= 13 V, I
L
= 80 mA
Fig.17. Typical input clamping voltage.
V
IG
= f(T
j
); conditions I
I
= 200
µ
A, V
BG
= 13 V
Fig.18. Typical status characteristic, T
j
= 25 ˚C.
I
S
= f(V
SG
); conditions V
IG
= V
BG
= 0 V
Fig.19. Typical status leakage current.
I
S
= f(T
j
); conditions V
SG
= 5 V, V
IG
= V
BG
= 0 V
Fig.20. Typical status low characteristic, T
j
= 25 ˚C.
I
S
= f(V
SG
); conditions V
IG
= 5 V, V
BG
= 13 V, I
L
= 0 A
Fig.21. Typical status low voltage, V
SG
= f(T
j
).
conditions I
S
= 50
µ
A, V
IG
= 5 V, V
BG
= 13 V, I
L
= 0 A
-60 -20 20 60 100 140 180
Tj / C
VIG / V BUK205-50Y
3.0
2.5
2.0
1.5
1.0
VIG(ON)
VIG(OFF)
-60 -20 20 60 100 140 180
Tj / C
IS BUK205-50Y
10 uA
1 uA
100 nA
10 nA
-60 -20 20 60 100 140 180
Tj / C
VIG / V
BUK205-50Y
8.0
7.5
7.0
6.5
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VSG / V
IS / uA BUK205-50Y
500
400
300
200
100
0
0 2 4 6 8 10
VSG / V
IS / mA BUK205-50Y
20
15
10
5
0
-60 -20 20 60 100 140 180
Tj / C
VSG / V BUK205-50Y
1
0.8
0.6
0.4
0.2
0
July 1996 8 Rev 1.000
Philips Semiconductors Product specification
TOPFET high side switch BUK205-50Y
SMD version of BUK201-50Y
Fig.22. Typical status clamping voltage, V
SG
= f(T
j
).
parameter V
IG
; conditions I
S
= 100
µ
A, V
BG
= 13 V
Fig.23. Low load current detection threshold.
I
L(OC)
= f(T
j
); conditions V
IG
= 5 V; V
BG
= 13 V
Fig.24. Supply typical undervoltage thresholds.
V
BG(TO)
= f(T
j
); conditions V
IG
= 3 V; I
L
= 80 mA
Fig.25. Supply typical overvoltage thresholds.
V
BG(LP)
= f(T
j
); conditions V
IG
= 5 V; I
L
= 80 mA
Fig.26. Typical battery to ground clamping voltage.
V
BG
= f(T
j
); parameter I
G
Fig.27. Typical negative load clamping characteristic.
I
L
= f(V
LG
); conditions V
IG
= 0 V, t
p
= 300
µ
s, 25 ˚C
-60 -20 20 60 100 140 180
Tj / C
VSG / V
BUK205-50Y
8.0
7.5
7.0
6.5
5
VIG / V =
0
-60 -20 20 60 100 140 180
Tj / C
VBG(LP) / V BUK205-50Y
47
46
45
44
43
on
off
-50 0 50 100 150 200
0
100
200
300
400
500
600
700
800
BUK205-50Y
Tmb / C
IL(OC) / mA
max.
min.
typ.
-60 -20 20 60 100 140 180
Tj / C
VBG / V BUK205-50Y
65
60
55
50
10 uA
1 mA
IG =
-60 -20 20 60 100 140 180
Tj / C
VBG(TO) / V BUK205-50Y
5
4
3
2
1
0
on
off
-25 -20 -15 -10 -5 0
0
5
10
15
20
25
30
BUK205-50Y
VLG / V
IL / A
July 1996 9 Rev 1.000
Philips Semiconductors Product specification
TOPFET high side switch BUK205-50Y
SMD version of BUK201-50Y
Fig.28. Typical negative load clamping voltage.
V
LG
= f(T
j
); parameter I
L
; condition V
IG
= 0 V.
Fig.29. Typical battery to load clamping voltage.
V
BL
= f(T
j
); parameter I
L
; condition I
G
= 5 mA.
Fig.30. Typical reverse battery characteristic.
I
G
= f(V
BG
); conditions I
L
= 0 A, T
j
= 25 ˚C
Fig.31. Typical reverse diode characteristic.
I
L
= f(V
BL
); conditions V
IG
= 0 V, T
j
= 25 ˚C
Fig.32. Typical output capacitance. T
mb
= 25 ˚C
C
bl
= f(V
BL
); conditions f = 1 MHz, V
IG
= 0 V
Fig.33. Typical overload characteristic, T
mb
= 25 ˚C.
I
L
= f(V
BL
); condition V
BG
= 13 V; parameter t
p
-60 -20 20 60 100 140 180
Tj / C
VLG / V BUK205-50Y
-22
-20
-18
-16
-14
-12
-10
7.5 A
1 mA
IL =
tp = 300 us
-1.2 -1 -0.8 -0.6 -0.4 -0.2 0
-40
-30
-20
-10
0
BUK205-50Y
VLB / V
IL / A
-60 -20 20 60 100 140 180
Tj / C
VBL / V BUK205-50Y
65
60
55
50
100 uA
1 mA
4 A
IL =
tp = 300 us
0 1020304050
100 pF
1 nF
10 nF
BUK205-50Y
VBL / V
Cbl
-20 -10 0
VBG / V
IG / mA
BUK205-50Y
0
-50
-100
-150
-15 -5
0 5 10 15 20 25
0
10
20
30
40
50
60
BUK205-50Y
VBL / V
IL / A
VBL(TO) typ.
tp =
300 us
current limiting
i.e. before short
circuit load trip
50 us
July 1996 10 Rev 1.000
Philips Semiconductors Product specification
TOPFET high side switch BUK205-50Y
SMD version of BUK201-50Y
Fig.34. Typical overload current, V
BL
= 9 V.
I
L
= f(T
mb
); conditions V
BG
= 13 V; t
p
= 300
µ
s
Fig.35. Typical short circuit load threshold voltage.
V
BL(TO)
= f(V
BG
); condition T
mb
= 25 ˚C
Fig.36. Typical short circuit load threshold voltage.
V
BL(TO)
= f(T
mb
); condition V
BG
= 13 V
Fig.37. Transient thermal impedance.
Z
th
j-mb
= f(t); parameter D = t
p
/T
-50 0 50 100 150 200
0
10
20
30
40
50
60
BUK205-50Y
Tmb / C
IL / A
typ.
-60 -20 20 60 100 140 180
Tmb / C
VBL(TO) / V BUK205-50Y
15
14
13
12
11
10
9
8
7
6
5
0 10 20 30 40
VBG / V
VBL(TO) / V BUK205-50Y
12
11
10
9
8
0
100n 10u 1m 100m 10
t / s
Zth j-mb / (K/W) BUK205-50Y
10
1
0.1
0.01
110m100u1u
D =
t
p
t
p
T
T
P
t
D
0.5
0.2
0.1
0.05
0.02
D =
July 1996 11 Rev 1.000
Philips Semiconductors Product specification
TOPFET high side switch BUK205-50Y
SMD version of BUK201-50Y
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.5 g
Fig.38. SOT426
mounting base connected to centre pin (cropped short)
MOUNTING INSTRUCTIONS
Dimensions in mm
Fig.39. SOT426
soldering pattern for surface mounting.
10.3 MAX
11 MAX
15.4
2.5
0.5
1.4 MAX
4.5 MAX
0.85 MAX
(x4)
3.4
3.4
1.7
1.7
11.5
9.0
3.8
1.3 (x4)
1.7
3.4
1.7
17.5
July 1996 12 Rev 1.000
Philips Semiconductors Product specification
TOPFET high side switch BUK205-50Y
SMD version of BUK201-50Y
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
July 1996 13 Rev 1.000
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Philips BUK205-50Y User manual

Philips
Brand
Philips
Model
BUK205-50Y
Category
Network switches
Type
User manual

The Philips BUK205-50Y is a monolithic temperature and overload protected power switch based on MOSFET technology in a 5-pin plastic surface mount envelope. It excels as a general controller for driving lamps, motors, solenoids, and heaters, thanks to its low on-state resistance, 5V logic compatible input, and extensive protection features.

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