![](//vs1.manuzoid.com/store/data-gzf/0c713ab4397f2afe2faf4cdb9c194681/2/001548140.htmlex.zip/bgc.jpg)
Printed-Circuit Board and Layout
www.ti.com
12
SLLU238–June 2017
Submit Documentation Feedback
Copyright © 2017, Texas Instruments Incorporated
UCC53x0xD Evaluation Module
5.2 UCC53x0D EVM Bill of Materials
Table 3 lists the UCC53x0D EVM bill of materials.
Table 3. Bill of Materials
Quantity Designator Value Description Manufacturer Part Number
1 J1 Header, 100mil, 4x2, Gold, SMT Molex 0015910080
1 C16 0.33µF CAP, Film, 0.33 µF, 250 V, ±5%, AEC-Q200 Grade 1, TH TDK B32521C3334J189
1 D2 40V Diode, Schottky, 40 V, 0.75 A, AEC-Q101, SOD-323 Infineon Technologies BAT165E6327HTSA1
3 C3, C9, C15 0.1µF CAP, CERM, 0.1 µF, 50 V, ±10%, X7R, 0805 Kemet C0805C104K5RACTU
3 C2, C8, C14 1µF CAP, CERM, 1 µF, 50 V, ±10%, X7R, 0805 Kemet C0805C105K5RACTU
2 C6, C12 4.7µF CAP, CERM, 4.7 µF, 50 V, ±10%, X5R, 0805 TDK C2012X5R1H475K125AB
3 C1, C7, C13 10µF CAP, CERM, 10 µF, 50 V, ±10%, X5R, 1206_190 Samsung Electro-Mechanics CL31A106KBHNNNE
1 R3
DNI (UCC53x0E)
0Ω (UCC53x0M) RES, 0, 1%, 0.75 W, AEC-Q200 Grade 0, 1210 Vishay-Dale CRCW12100000Z0EAHP
3.3Ω (UCC53x0S) RES, 3.30, 1%, 0.75 W, AEC-Q200 Grade 0, 1210 Vishay-Dale CRCW12103R30FKEAHP
3 R1, R2, R7 10Ω RES, 10.0, 1%, 0.75 W, AEC-Q200 Grade 0, 1210 Vishay-Dale CRCW121010R0FKEAHP
1 R4
10Ω (UCC53x0E) RES, 10.0, 1%, 0.75 W, AEC-Q200 Grade 0, 1210 Vishay-Dale CRCW121010R0FKEAHP
10Ω (UCC53x0M) RES, 10.0, 1%, 0.75 W, AEC-Q200 Grade 0, 1210 Vishay-Dale CRCW121010R0FKEAHP
DNI (UCC53x0S)
1 R5
0Ω (UCC53x0E) RES, 0, 1%, 0.75 W, AEC-Q200 Grade 0, 1210 Vishay-Dale CRCW12100000Z0EAHP
DNI (UCC53x0M)
DNI (UCC53x0S)
1 R6
DNI (UCC53x0E)
0Ω (UCC53x0M) RES, 0, 1%, 0.75 W, AEC-Q200 Grade 0, 1210 Vishay-Dale CRCW12100000Z0EAHP
0Ω (UCC53x0S) RES, 0, 1%, 0.75 W, AEC-Q200 Grade 0, 1210 Vishay-Dale CRCW12100000Z0EAHP
1 J2 Terminal Block, 3.5mm Pitch, 2×1, TH On-Shore Technology ED555/2DS
1 J3 Terminal Block, 3.5mm Pitch, 3×1, TH On-Shore Technology ED555/3DS
2 C4, C10 22µF CAP, AL, 22 µF, 50 V, ±20%, 0.88 Ω, SMD Panasonic EEE-FK1H220P
2 C5, C11 47µF CAP, AL, 47 µF, 50 V, ±20%, 0.68 Ω, SMD Panasonic EEE-FK1H470XP
1 U1 UCC53x0DEVM
0.5/2/4/6A/10A Isolated IGBT Gate Drivers with High CMTI, D0008B (SOIC-8) Texas Instruments UCC53x0SDR
0.5/2/4/6A/10A Isolated IGBT Gate Drivers with High CMTI, D0008B (SOIC-8) Texas Instruments UCC53x0MDR
0.5/2/4/6A/10A Isolated IGBT Gate Drivers with High CMTI, D0008B (SOIC-8) Texas Instruments UCC53x0EDR
2 D1, D3 600V Diode, Ultrafast, 600 V, 2 A, SMB ON Semiconductor MURS160T3G
1 J4 Terminal Block, 3×1, 5.08 mm, TH On-Shore Technology OSTTA034163
4 H1, H2, H3, H4 Bumpon, Hemisphere, 0.44 × 0.20, Clear 3M SJ-5303 (CLEAR)
10
TP1, TP2, TP3, TP4,
TP5, TP6, TP7, TP8,
TP9, TP10
Test Point, Miniature, SMT Keystone 5019