Panasonic Network Card 2SC2480 User manual

Type
User manual

This manual is also suitable for

1
Transistors
Publication date: June 2006 SJC00116CED
2SC2480
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
Features
High transition frequency f
T
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
30 V
Collector-emitter voltage (Base open) V
CEO
20 V
Emitter-base voltage (Collector open) V
EBO
3V
Collector current I
C
50 mA
Collector power dissipation P
C
150 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 100 µA, I
E
= 030 V
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 µA, I
C
= 03V
Base-emitter voltage V
BE
V
CB
= 10 V, I
E
= 2 mA 720 mV
Forward current transfer ratio h
FE
V
CB
= 10 V, I
E
= 2 mA 25 250
Transition frequency
*
f
T
V
CB
= 10 V, I
E
= 15 mA, f = 200 MHz 800 1
300 1
600 MHz
Reverse transfer capacitance C
rb
V
CE
= 6 V, I
C
= 0, f = 1 MHz 0.8 pF
(Common base)
Reverse transfer capacitance C
re
V
CB
= 10 V, I
E
= 1 mA, f = 10.7 MHz 1.0 1.5 pF
(Common emitter)
Power gain G
P
V
CB
= 10 V, I
E
= 1 mA, f = 200 MHz 20 dB
Unit: mm
Electrical Characteristics T
a
= 25°C ± 3°C
1: Base
2: Emitter
3: Collector
JEITA: SC-59A
Mini3-G1 Package
0.40
+0.10
–0.05
(0.65)
1.50
+0.25
–0.05
2.8
+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4±0.2
10˚
0 to 0.1
1.1
+0.2
–0.1
1.1
+0.3
–0.1
Marking Symbol: R
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Rank T S No-rank
f
T
800 to 1
400 1
000 to 1
600 800 to 1
600
Marking symbol RT RS R
Product of no-rank is not classified and have no indication for rank.
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC2480
2
SJC00116CED
I
B
V
BE
I
C
V
BE
h
FE
I
C
P
C
T
a
I
C
V
CE
I
C
I
B
V
CE(sat)
I
C
f
T
I
E
C
re
V
CE
0 16040 12080
0
240
200
160
120
80
40
Ambient temperature T
a
(°C)
Collector power dissipation P
C
(mW)
0
24
20
16
12
8
4
0481216
I
B
= 300 µA
50 µA
100 µA
150 µA
200 µA
250 µA
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
T
a
= 25°C
0
0 500400300200100
24
20
16
12
8
4
Base current I
B
(µA)
Collector current I
C
(mA)
V
CE
= 10 V
T
a
= 25°C
0
400
350
300
250
200
150
100
50
0 2.01.61.20.80.4
V
CE
= 10 V
T
a
= 25°C
Base-emitter voltage V
BE
(V)
Base current I
B
(µA)
0
0 2.01.61.20.80.4
60
50
40
30
20
10
V
CE
= 10 V
T
a
= 75°C 25°C
25°C
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA)
0
0.1
240
200
160
120
80
40
1 10 100
T
a
= 75°C
25°C
25°C
Forward current transfer ratio h
FE
V
CE
= 10 V
Collector current I
C
(mA)
0.01
0.1
0.1
1
10
100
1 10 100
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75°C
25°C
–25°C
0.1 1 10 100
0
1 600
1 400
1 200
1 000
800
600
400
200
Transition frequency f
T
(MHz)
Emitter current I
E
(mA)
V
CB
= 10 V
T
a
= 25°C
0
2.4
2.0
1.6
1.2
0.8
0.4
0.1 1 10 100
Collector-emitter voltage V
CE
(V)
I
C
= 1 mA
f = 10.7 MHz
T
a
= 25°C
Reverse transfer capacitance
C
re
(pF)
(Common emitter)
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC2480
3
SJC00116CED
Z
rb
I
E
G
P
I
E
NF I
E
b
ib
g
ib
b
rb
g
rb
b
fb
g
fb
b
ob
g
ob
0.1 1 10
Reverse transfer impedance Z
rb
()
0
120
100
80
60
40
20
V
CB
= 10 V
f = 2 MHz
T
a
= 25°C
Emitter current I
E
(mA)
0.1 1 10 100
Power gain G
P
(dB)
0
40
35
30
25
20
15
10
5
V
CB
= 10 V
f = 100 MHz
R
g
= 50
T
a
= 25°C
Emitter current I
E
(mA)
Noise figure NF (dB)
0
12
10
8
6
4
2
0.1 1 10 100
V
CB
= 10 V
f = 100 MHz
R
g
= 50 k
T
a
= 25°C
Emitter current I
E
(mA)
60
05040302010
0
10
20
30
40
50
Input conductance g
ib
(mS)
Input susceptance b
ib
(mS)
y
ib
= g
ib
+ jb
ib
V
CB
= 10 V
f = 900 MHz
I
E
= 2 mA
5 mA
300
500
600
200
2.4
1.0 0 0.2 0.4 0.6 0.8
0
0.4
0.8
1.2
1.6
2.0
f = 900 MHz
I
E
= 5 mA
2 mA
300
500
600
200
Reverse transfer conductance g
rb
(mS)
Reverse transfer susceptance b
rb
(mS)
y
rb
= g
rb
+ jb
rb
V
CB
= 10 V
0
60 402002040
48
40
32
24
16
8
2 mA
300
500
600
900
f = 200 MHz
I
E
= 5 mA
Forward transfer conductance g
fb
(mS)
Forward transfer susceptance b
fb
(mS)
y
fb
= g
fb
+ jb
fb
V
CB
= 10 V
0
0 2.01.61.20.80.4
12
10
8
6
4
2
5 mA
300
500
600
900
f = 200 MHz
I
E
= 2 mA
Output conductance g
ob
(mS)
Output susceptance b
ob
(mS)
y
ob
= g
ob
+ jb
ob
V
CE
= 10 V
This product complies with the RoHS Directive (EU 2002/95/EC).
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
Any applications other than the standard applications intended.
(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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Panasonic Network Card 2SC2480 User manual

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