Panasonic 2SC2295 is a silicon NPN epitaxial planar transistor for high-frequency amplification. It is complementary to the 2SA1022 transistor and is often used in RF amplification of FM/AM radios due to its high transition frequency (fT). The device comes in a Mini3-G1 package and is RoHS compliant.
Key features of the Panasonic 2SC2295 include:
- High transition frequency: fT = 250 MHz (typ.)
- Low noise figure: NF = 4.0 dB (max.) at 5 MHz
- High forward current transfer ratio: hFE = 220 (max.)
- Wide operating temperature range: -55 to +150 °C
With its excellent high-frequency performance and compact size, the Panasonic 2SC2295 is a suitable choice for various RF applications, including:
Panasonic 2SC2295 is a silicon NPN epitaxial planar transistor for high-frequency amplification. It is complementary to the 2SA1022 transistor and is often used in RF amplification of FM/AM radios due to its high transition frequency (fT). The device comes in a Mini3-G1 package and is RoHS compliant.
Key features of the Panasonic 2SC2295 include:
- High transition frequency: fT = 250 MHz (typ.)
- Low noise figure: NF = 4.0 dB (max.) at 5 MHz
- High forward current transfer ratio: hFE = 220 (max.)
- Wide operating temperature range: -55 to +150 °C
With its excellent high-frequency performance and compact size, the Panasonic 2SC2295 is a suitable choice for various RF applications, including:
1
Transistors
Publication date: March 2003 SJC00112BED
2SC2295
Silicon NPN epitaxial planar type
For high-frequency amplification
Complementary to 2SA1022
■ Features
• Optimum for RF amplification of FM/AM radios
• High transition frequency f
T
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
30 V
Collector-emitter voltage (Base open) V
CEO
20 V
Emitter-base voltage (Collector open) V
EBO
5V
Collector current I
C
30 mA
Collector power dissipation P
C
200 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 10 V, I
E
= 0 0.1 µA
Forward current transfer ratio
*
h
FE
V
CB
= 10 V, I
E
= −1 mA 70 220
Transition frequency f
T
V
CB
= 10 V, I
E
= −1 mA, f = 200 MHz 150 250 MHz
Noise figure NF V
CB
= 10 V, I
E
= −1 mA, f = 5 MHz 2.8 4.0 dB
Reverse transfer impedance Z
rb
V
CB
= 10 V, I
E
= −1 mA, f = 2 MHz 22 50 Ω
Reverse transfer capacitance C
re
V
CB
= 10 V, I
E
= −1 mA, f = 10.7 MHz 0.9 1.5 pF
(Common emitter)
Unit: mm
■ Electrical Characteristics T
a
= 25°C ± 3°C
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
0.40
+0.10
–0.05
(0.65)
1.50
+0.25
–0.05
2.8
+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4±0.2
5˚
10˚
0 to 0.1
1.1
+0.2
–0.1
1.1
+0.3
–0.1
Marking Symbol: V
Rank B C
h
FE
70 to 140 110 to 220
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC2295
2
SJC00112BED
I
B
V
BE
I
C
V
BE
V
CE(sat)
I
C
P
C
T
a
I
C
V
CE
I
C
I
B
h
FE
I
C
f
T
I
E
Z
rb
I
E
0 16040 12080
0
240
200
160
120
80
40
Collector power dissipation P
C
(
mW
)
Ambient temperature T
a
(
°C
)
018612
0
12
10
8
6
4
2
T
a
= 25°C
I
B
= 100 µA
80 µA
60 µA
40 µA
20 µA
Collector current I
C
(
mA
)
Collector-emitter voltage V
CE
(
V
)
0 1008020 6040
0
15.0
12.5
10.0
7.5
5.0
2.5
V
CE
= 10 V
T
a
= 25°C
Base current I
B
(
µA
)
Collector current I
C
(
mA
)
0 1.00.80.2 0.60.4
0
120
100
80
60
40
20
V
CE
= 10 V
T
a
= 25°C
Base-emitter voltage V
BE
(
V
)
Base current I
B
(
µA
)
0 2.01.60.4 1.20.8
0
60
50
40
30
20
10
V
CE
= 10 V
T
a
= 75°C
−25°C
25°C
Base-emitter voltage V
BE
(
V
)
Collector current I
C
(
mA
)
0.1 1 10 100
0.01
0.1
1
10
100
I
C
/ I
B
= 10
T
a
= 75°C
25°C
−25°C
Collector-emitter saturation voltage V
CE(sat)
(
V
)
Collector current I
C
(
mA
)
0.1 1 10 100
0
240
200
160
120
80
40
V
CE
= 10 V
T
a
= 75°C
25°C
−25°C
Forward current transfer ratio h
FE
Collector current I
C
(
mA
)
− 0.1 −1 −10 −100
0
400
300
100
200
V
CB
= 10 V
f = 100 MHz
T
a
= 25°C
Transition frequency f
T
(
MHz
)
Emitter current I
E
(
mA
)
− 0.1 −1 −10
0
60
50
40
30
20
10
V
CB
= 10 V
f = 2 MHz
T
a
= 25°C
Reverse transfer impedance Z
rb
(
Ω
)
Emitter current I
E
(
mA
)
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC2295
3
SJC00112BED
C
re
V
CE
NF I
E
b
ie
g
ie
b
re
g
re
b
fe
g
fe
b
oe
g
oe
0.1 1 10 100
0
3.0
2.5
2.0
1.5
1.0
0.5
f = 10.7 MHz
T
a
= 25°C
I
C
= 3 mA
1 mA
Collector-emitter voltage V
CE
(
V
)
Reverse transfer capacitance
C
re
(pF)
(Common emitter)
− 0.1 −1 −10
0
12
10
8
6
4
2
V
CB
= 6 V
f = 100 MHz
R
g
= 50 Ω
T
a
= 25°C
Noise figure NF
(
dB
)
Emitter current I
E
(
mA
)
0403282416
0
24
20
16
12
8
4
V
ie
= g
ie
+ jb
ie
V
CE
= 10 V
f = 10.7 MHz
I
E
= −1 mA
−2 mA
−4 mA
−7 mA
58
100
Input conductance g
ie
(
mS
)
Input susceptance b
ie
(
mS
)
− 0.5 0− 0.1− 0.4 − 0.2− 0.3
− 0.6
0
− 0.1
− 0.2
− 0.3
− 0.4
− 0.5
y
re
= g
re
+ jb
re
V
CE
= 10 V
f = 10.7 MHz
I
E
= −1 mA
58
100
Reverse transfer conductance g
re
(
mS
)
Reverse transfer susceptance b
re
(
mS
)
0 1008020 6040
−120
0
−20
−40
−60
−80
−100
y
fe
= g
fe
+ jb
fe
V
CE
= 10 V
f = 10.7 MHz
100
10.7
− 0.1 mA
−1 mA
−2 mA
I
E
= −4 mA
100
100
58
58
58
Forward transfer conductance g
fe
(
mS
)
Forward transfer susceptance b
fe
(
mS
)
00.50.40.1 0.30.2
0
1.2
1.0
0.8
0.6
0.4
0.2
y
oe
= g
oe
+ jb
oe
V
CE
= 10 V
f = 10.7 MHz
I
E
= −1 mA
58
100
Output conductance g
oe
(
mS
)
Output susceptance b
oe
(
mS
)
This product complies with the RoHS Directive (EU 2002/95/EC).
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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4
Panasonic 2SC2295 User manual
- Type
- User manual
- This manual is also suitable for
Panasonic 2SC2295 is a silicon NPN epitaxial planar transistor for high-frequency amplification. It is complementary to the 2SA1022 transistor and is often used in RF amplification of FM/AM radios due to its high transition frequency (fT). The device comes in a Mini3-G1 package and is RoHS compliant.
Key features of the Panasonic 2SC2295 include:
- High transition frequency: fT = 250 MHz (typ.)
- Low noise figure: NF = 4.0 dB (max.) at 5 MHz
- High forward current transfer ratio: hFE = 220 (max.)
- Wide operating temperature range: -55 to +150 °C
With its excellent high-frequency performance and compact size, the Panasonic 2SC2295 is a suitable choice for various RF applications, including:
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